2N2243

Abstract: 2n2405
Contextual Info: Medium Power Amplifiers and Switches TYPE PO LA ­ CASE NO. RITY 2N1566 2N1613 2N1613A 2N1613B 2N1711 2N1711A 2N1711B 2N1889 2N1890 2N1893 2N1973 2N1974 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 2N2049 2N2102 2N2102A 2N2192 2N2192A 2N2192B

Contextual Info: COLLECTOR CURRENT = 2 AMPS NPN TYPES 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666 2N3766 2N3767 2N3917 2N3918 2N4000 2N4001 2N4237 2N4238 2N4239 2N4240 2N4862 2N4863 2N4864 2N4910 2N4911 2N4912 2N5050

Contextual Info: 1 1 1 ESSOELECTRONICS, INC. PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES ì 1 ] ] ] 1 1 11 1 1 1 fl 1 1 Device No 2N1252 2N1253 2N1506 2N1506A 2NX714 2N1715 2N1716 2N1717 2NX718 2N1719 2N1720 2N1721 2N1B89 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989

2N1990

Contextual Info: na. 20 STERN AVE. SPRINQRELD, NEW JERSEY 07081 U.SA TYPE NO DESCRIPTION VCBO VCEO V M Small Signal Transistors VEBO teo« VCB (MA) M M IFE et «vc (mA) 00 Vce(SAT)«lc M (mA) •CEO "ICES -ICEV —ICEH *VCER MIN MIN MIN 2N1975 NPNAMPUSWnrCH 100 60 7.0 2N1983

2n912

Abstract: 2N1975 2n1974
Contextual Info: TYPES 2N910, 2N911 2N912, 2N1973. 2N1974, 2N1975 N-P-N SILICON TRANSISTORS B U L L E T IN NO. D L -S 733561, M A Y 1 B 6 3 - R E V IS E D M ARCH 1973 H IG H L Y R E L IA B L E , V E R S A T IL E D E V IC E S C H A R A C T E R IZ E D E S P E C IA L L Y FOR S M A L L -S IG N A L A P P L IC A T IO N S

2N1718

Abstract: 2N1720 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717
Contextual Info: Ü J iä ELECTRONICS, INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992 2N2993

Contextual Info: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992

2N1252

Abstract: 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719
Contextual Info: Ú j ÍM E LE C T R O N IC S , INC. \ - 7 PARAMETER TABLES COLLECTOR CURRENT = 2 AMPS NPN TYPES Device No 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1715 2N1716 2N1717 2N1718 2N1719 2N1720 2N1721 2N1889 2N1890 2N1974 2N1975 2N2987 2N2988 2N2989 2N2990 2N2991 2N2992

2n1720

Abstract: 2N1716 N2989 2N1718 2N1252 2N3665 2N5682 MT-13 2N2993 2N4001
Contextual Info: high-rei power transistors 77 SILICON NPN TRANSISTORS 2 Amp BREAKDOWN VOLTAGE I TYPE NUMBER CASE SIZE 2N1252 2N1253 2N1506 2N1506A 2N1714 2N1716 2N1718 2N1720 2N1889 2N1890 2N1974 2N1975 2N2987 N2988 N2989 2N2990 2N2991 2N2992 2N2993 2N2994 2N3665 2N3666

2N305S

Abstract: 2N2982 2SC696 2SC481 2N549 BSY87 2N754 2N844 ESM637 2N1564
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560

2N2222B

Abstract: 2N2280 2N2307 BSY87 2SC696 Elcoma 2N2244 2N1564 2n2382 Delco
Contextual Info: LOW•POWER SILICON NPN Item Number Part Number Manufacturer >= 50 V, Cont'd 2NS98 2N1492 2N2514 2N339A 2N545 2N719A 2N1975 2N912 2N2520 2N757A See See See See See See See See See See 10 15 20 25 30 35 40 2N758B BC142 2N1564 2N734 2N754 2N742 2N742A 2N560

2N911

Abstract: 2N910 2N912 6/18/2N911
Contextual Info: TYPES 2N910, 2N911, 2N912. 2N1973. 2N1S74, 2N1975 N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L -S 7 3 3 5 6 1 , M A Y 1 9 6 3 - R E V I S E D M A R C H 1 9 7 3 HIGHLY RELIABLE, VERSATILE DEVICES CHARACTERIZED ESPECIALLY FOR SMALL-SIGNAL APPLICATIONS

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3568

Abstract: 2N3569 2N702 2N2406 2N2539 2N2407 2N3565 2N3638 2N1470 2N2224
Contextual Info: J325835_4 ADVANCED SEMICONDUCTOR SILICON A D V A N C E D TRANSISTORS SEMICONDUCTOR P D @ T c = 25°C DEVICE TYPE NO. POLARITY 2N329A 2N332 2N333 2N334 2N335 2N336 2N337 2N338 2N339 2N340 2N341 2N342 2N343 2N478 2N479 2N479A 2N480 2N480A 2N541 2N542 2N543 2N545

2N2049

Abstract: 2N1132 2N1420 2N1507 2N1566 2N1613 2N1613A 2N1613B 2N720A 2N721
Contextual Info: Medium Power Amplifiers and Switches TYPE NO. POLA­ RITY CASE HFE MAXIMUM RATINGS VCEO Pd IC mW (V) min max (A) IC (mA) 10 10 10 10 10 Cob COMPLE­ max MENTARY TYPE (PF) (A) fT min (MHz) 5 1.5 1.2 1.5 1.5 0.15 0.15 0.05 0.15 0.15 50 50 50 70 60 15 45 15

AP1131

Abstract: 2N1720 2N1718 2n1482 2N2990 2N1479 2N1480 2N1481 2N1486 2N1700
Contextual Info: 0043592 A P I ELECTRON ICS INC 26C 00217 D _ _P A R A M E T E R T A B L E S A P I ELECTRONICS INC ' 2b dY ^ D O M B S T E □□□□217 E, COLLECTOR CURRENT = 1 AMP NPN TYPES Device No Case v CBO Volts 2N1479 2N1480 2N1486

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

2n7588

Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
Contextual Info: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.

2N2464

Abstract: 2N2240 2N2655 TO206AA 2C6090 2N2538 2N2201 2N2203 2N1945 2N2453
Contextual Info: STI Type: 2N1945 Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 30 hFE min: hFE max: hFE A: VCE: VCE A: hfe: fT: Case Style: TO-205AD/TO-39: Industry Type: 2N1945 STI Type: 2N1958A Notes: Polarity: NPN Power Dissipation: 600m Tj: VCBO: VCEO: 40

Contextual Info: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N1G13

Abstract: 2N1B90 2N1972 2n1889
Contextual Info: TO-39 MIN 8,50 DIM * a * B C S P * E F 7.74 6.09 0.40 - MAX 9,39 8,50 6.60 0,53 0 .U 2,68 5.33 2.41 4.82 o.ae 0.71 1,02 0.73 12,7 42 DEC 4« DEC G H J K L PIN CQNFICURAHON:1. EMITTER 2. BASE 3. COLLECTOR TO-39 Metal-Can Package Transistors NPN Electrical Cha ra cte ristics (Ta=25“C, U nle ss O therw ise Specified)

2n697

Abstract: 2N956 2N2905
Contextual Info: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER A N D SWITCHING TRANSISTORS BY ASCENDING VcEO METAL PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) V CEO h FE Coi Cob V CE(sat) h ^off PD PF MHz ns Ta 25°C MAX MIN MAX mW 250 285 800 3.0 TO-5

2N1893 motorola

Abstract: BSW32 2N1764 2N1742 BC447 MPSH04 2N1841 2N1956 2N1821 BSW39
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number • 10 MPS5858 BFR50 TIPP31B ST4341 BSW65 BSW65 2N1572 2N738 2N2517 2N755 ~~;:6 15 20 SOR1893 A BSW39-6 BC344 2N2858 2N2852 2N719 2N2509 ESM639 ~~~~ 25 30 2SC696A 2N2890 2N720A BFY80 MPSH04 2N1893 2N2316 BCX31