Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N2222 TRANSISTOR SOA Search Results

    2N2222 TRANSISTOR SOA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N2222 TRANSISTOR SOA Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    power supply IRF830 APPLICATION

    Abstract: 220 ac voltage regulator without transformer an9101 250VAC CAP FAN REGULATOR HV-2405E IRF830 equivalent Gould 2608 MOSFET IGBT THEORY AND APPLICATIONS SCHEMATIC POWER SUPPLY irf840 TRANSISTOR mosfet IRF840
    Text: Harris Semiconductor No. AN9217.2 Harris Intelligent Power April 1994 HIGH CURRENT OFF LINE POWER SUPPLY Author: Don LaFontaine Introduction Overview Design Engineers are constantly pushed to reduce the space and cost of the power supply in their systems. For


    Original     		AN9217 HV-2405E AN9101 power supply IRF830 APPLICATION 220 ac voltage regulator without transformer 250VAC CAP FAN REGULATOR IRF830 equivalent Gould 2608 MOSFET IGBT THEORY AND APPLICATIONS SCHEMATIC POWER SUPPLY irf840 TRANSISTOR mosfet IRF840 PDF

    power supply IRF830 APPLICATION

    Abstract: MOSFET irf830 FOR 50HZ SWITCHING APPLICATIONS Flyback Switching Power Supply AN9217 HV-2405E High Current Off Line Power Supply AN9101 1N4007 50Hz bridge rectifier diode IRF830 equivalent HV-2405E irf840 rf 2N2222
    Text: No. AN9217.2 Application Note April 1994 HIGH CURRENT OFF LINE POWER SUPPLY Author: Don LaFontaine Introduction Overview Design Engineers are constantly pushed to reduce the space and cost of the power supply in their systems. For supplies between 2W and 6W that can operate over the


    Original     		AN9217 HV-2405E power supply IRF830 APPLICATION MOSFET irf830 FOR 50HZ SWITCHING APPLICATIONS Flyback Switching Power Supply AN9217 HV-2405E High Current Off Line Power Supply AN9101 1N4007 50Hz bridge rectifier diode IRF830 equivalent irf840 rf 2N2222 PDF

    MJE13005L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-Q QW-R221-027 MJE13005L PDF

    MJE13005H

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-H QW-R221-024 MJE13005H PDF

    equivalent mje13005

    Abstract: mje13005 MJE13005L
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-126 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 mje13005 MJE13005L PDF

    circuit based on MJE13005

    Abstract: Ferroxcube core 2n2222 transistor pin b c e MJE13005G transistor mje13005 TO-126 mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 circuit based on MJE13005 Ferroxcube core 2n2222 transistor pin b c e MJE13005G transistor mje13005 TO-126 mje13005 PDF

    2N2222 transistor output curve

    Abstract: MJE13005 transistor mje13005 circuit based on MJE13005 TRANSISTOR HANDLING 2A 300V transistor npn 2a MJE13005 TRANSISTOR 2N2222 NPN Transistor features equivalent mje13005 2n2905 time delay relay
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-263 O-126 O-220 O-220F MJE13005L QW-R203-018 2N2222 transistor output curve MJE13005 transistor mje13005 circuit based on MJE13005 TRANSISTOR HANDLING 2A 300V transistor npn 2a MJE13005 TRANSISTOR 2N2222 NPN Transistor features equivalent mje13005 2n2905 time delay relay PDF

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-K QW-R203-045 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-K QW-R203-045 PDF

    2n2222 h parameter values

    Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 2n2222 h parameter values equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 


    Original     		MJE13005 O-220F O-251 O-263 O-252 O-220 O-262 QW-R203-018. PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 QW-R203-018. PDF

    transistor mje13005 TO-126

    Abstract: to-126 transistor case
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case PDF

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent PDF

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent PDF

    MJE13009

    Abstract: 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications such


    Original     		MJE13009 MJE13009 QW-R203-024 2N2222 transistor output curve mje13009l mje13009 CIRCUIT 2N2222 SOA MJE13009G tr 2n2222 MJE13009L-TF3-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-P NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		MJE13009-P MJE13009-P QW-R223-008, PDF

    equivalent mje13005

    Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005 PDF

    mje13009 equivalent

    Abstract: mje13009L 2N2222 NPN Transistor features MJE13009 MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009 NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009 is designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are


    Original     		MJE13009 MJE13009 MJE13009L QW-R203-024 mje13009 equivalent mje13009L 2N2222 NPN Transistor features MJE13 MJE130 MJE13009L-T3P-T high frequency npn transistors collector to emitter voltage 400V 3A 1Mhz 2n2222 transistor pin b c e MJE13009-T3P-T PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13009-K NPN SILICON TRANSISTOR SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS „ DESCRIPTION The MJE13009-K is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V switch mode applications


    Original     		MJE13009-K MJE13009-K QW-R223-007 PDF

    HV-2405E

    Abstract: 240v - 30vdc transformer 4284V RB-17 41VRMS
    Text: [ /Title /Subject () /Autho r () /Keywords () /Creator () /DOCI NFO pdfmark [ /PageMode /UseOutlines /DOCVIEW pdfmark HV-2405E TM WN ITHDRA PART W OBSOLETE SS S PROCE DESIGN N NO EW September 1998 File Number World-WideSingle Chip Power Supply Features


    Original     		HV-2405E HV-2405E 24VDC 15Vrms 275Vrms 200Hz -40oC -25oC 240v - 30vdc transformer 4284V RB-17 41VRMS PDF

    2n2222 transistor pin b c e

    Abstract: DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G QW-R204-004 2n2222 transistor pin b c e DATA SHEET OF transistor 2N2222 to-92 transistor mje13003 equivalent mje13003 MJE13003 transistor OF transistor 2N2222 to-92 2n2222 to-92 mje13003 equivalent MJE13003 mje13003l PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003-P NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR  DESCRIPTION These devices are designed for high-voltage and high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		MJE13003-P 290ns MJE13003L-P-x-T60-K QW-R204-027 PDF