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    2N2223 TRANSISTOR Search Results

    2N2223 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N2223 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N2223

    Abstract: No abstract text available
    Text: 2N2223 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N2223 Availability Online Store


    Original
    2N2223 2N2223 STV3208 LM3909N LM3909 PDF

    2n2223a

    Abstract: No abstract text available
    Text: 2N2223 2N2223A SILICON DUAL NPN TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2223 and 2N2223A are dual silicon NPN transistors manufactured by the epitaxial planar process utilizing two individual chips mounted in a hermetically sealed metal case designed


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    2N2223 2N2223A 2N2223 x10-4 22-January 2n2223a PDF

    TRANSISTOR DATASHEET D1555

    Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
    Text: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440


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    2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 TRANSISTOR DATASHEET D1555 d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878 PDF

    Untitled

    Abstract: No abstract text available
    Text: TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA silicon Transistor 2N2223 absolute maxfmum ratings: (25°C) (unless otherwise Voltages Collector to Base Collector to Emitter (R BE =10 ohnis) Collcuor to Emitter


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    2N2223 PDF

    2N3907

    Abstract: 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252
    Text: A E R O S P A C E P R O D U C T S SEMICONDUCTORS FOR HIGH RELIABILITY APPLICATIONS C O N V E N T I O N A L PAC K AG E S TO46 TO72 TO71 TO18 TO5 TO39 TRANSISTORS, MOSFETS, DIODES, VOLTAGE REGULATORS TO46 TO18 cont TO39 (cont) TO39 (cont) TO39 (cont) TO77(cont)


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    2N2604-05 2N2907A-T46 2N3485-86 2N3508-09 2N5581-82 BC182-TO46 BC212-TO46 BFY74-77 BSV91 BSX20-21 2N3907 2c415 2N3409 BSV81 BC107-109 2N3209 2N3680 2N3036L 2N6534 2N5252 PDF

    Transistor 78 L 05

    Abstract: 2N2223A 2N2453 2N2453A 2N2639 2N2919 2N2642 2N2060 2N2223 2N2480A
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 Jgr / DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


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    2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919 PDF

    2N2919

    Abstract: 2N2642
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 JEt 7 DEVICE TYPE 2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2652 2N2652A 2N2721 2N2722 2N2903 2N2915 2N2916 2N2917 2N2918 2N2919 2N2920


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    2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 2N2919 PDF

    Q2T2905

    Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
    Text: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*


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    2N2060t 2N2223* 2N2223At 100/xA 2n2641 2n2640* 2N2639t 2n2644 2n2643* 2N2642I Q2T2905 SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806 PDF

    Untitled

    Abstract: No abstract text available
    Text: INTEX/ SEMITRÔNICS CORP 27E D discrete devices GG002flL> 3 semitron hot line 7^ 7 -• ¿7 37 TOLL FREE NUMBER 800-777-3960 multiple devices dual transistors A Vb e -1— Vb E.2 Breakdown Voltate: (volts) T)fH VcB VCE Veb 2N2060 2N2060A 2N20S0B 2N2223 2H2223A


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    GG002flL> 2N2060 2N2060A 2N20S0B 2N2223 2H2223A 2N2453 2N2453A 2N2490 2N2490A PDF

    2N2223

    Abstract: 2N2060 2n2223 transistor 2N2223A 2N2480
    Text: MOTOROLA SC -CXSTRS/R 6367254 ~TL> F> MOTOROLA SC XSTRS/R 96D F Collector-Emitter Voltage 2N2060 Symbol 2N2223.A VCEO 60 Collector-Emitter Voltage VCER 80 Collector-Base Voltage VCBO 100 Emitter-Base Voltage VEBO 7.0 Collector Current — Continuous PD Total Device Dissipation


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    0S37b 2N2060 2N2223 2N2480 2n2223 transistor 2N2223A PDF

    Untitled

    Abstract: No abstract text available
    Text: Dual Transistors TO-78 Case P q @ TA=25°C=600mW Total Both Die Equal Power TYPE NO. DESCRIPTION •c (mA) VCBO VCEO (V) (V) h @«C (mA) MAX MIN MIN MIN MAX 2N2060 NPN AMPL/SWITCH 500 100 60 50 150 2N2060A NPN AMPLVSWITCH 500 100 60 50 150 2N2223 NPN AMPL7SWITCH


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    600mW 2N2060 2N2060A 2N2223 2N2223A 2N2453 2N2453A 2N24B0 2N2480A 2N2639 PDF

    Transistor 78 L 05

    Abstract: 2N2919 130L 2N2903 2N2916
    Text: N EW ENGLAND SEMICONDUCTOR SMALL SIGNAL DUAL NPN TRANSISTOR TO-78 PACKAGE TO-78 / 24 DEVICE TYPE ^CEO sus VOLTS Ic (max) AMPS hpE @ Ic/ ^CE min/max @ mA/V ^CE(sat) @ I q/I b V @ mA/mA /t (MHz) 2N2060 60 0.5 30/90@0.1/5 1.2@50/5 P 15 2N2223 60 0.5 25/150@0.1/5


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    2N2060 2N2223 2N2223A 2N2453 2N2453A 2N2480A 2N2639 2N2640 2N2641 2N2642 Transistor 78 L 05 2N2919 130L 2N2903 2N2916 PDF

    2n2060

    Abstract: 2n2223 2N2060 MOTOROLA
    Text: MOTOROLA SC X S T RS / R F 15E D | b3b?SS4 0Gflb23fl fl | MAXIMUM RATINGS Sym bol 2N206Q 2N2223.A Collector-Em itter Voltag e V cEO 60 C ollector-E m itter V olta g e V cER 80 C o llector-Base V oltag e VCBO 100 75 80 Vdc Vebo 7.0 5.0 5.0 Vdc Rating Em itter-Base V olta g e


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    2N206Q 2N2223 2N2480 0Gflb23fl 2N2060 2N2223, 2N2480A 2N2060jA 2N2060 MOTOROLA PDF

    2N2223

    Abstract: 2N2060 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A 2N2480 2N2480A jan 2n2060 MD2218
    Text: MOT OROL A SC -CXSTRS/R 6367254 DE I b 3 t i 7 5 5 4 F> MOTOROLA SC XSTRS/R 96D F Collector-Em itter Voltage 2N2060 Sym b o l 2N2223.A VCEO 2N2480 2N2480A U n it 60 40 40 Vdc VCER 80 — Collector-Base Voltage VCBO 100 75 80 Vdc Emitter-Base Voltage VEBO


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    0S37b 2N2060 2N2223 2N2480 2N2480A 2N2480 2N2060 MOTOROLA 2N2223A 2n2430 2N2060A jan 2n2060 MD2218 PDF

    2N2223

    Abstract: 2N2060 Ferranti Semiconductors BS9300 "dual TRANSISTORs" 2N2223A C479 ZDT40 ZDT41 ZDT42
    Text: SEMICONDUCTOR NETWORKS Ferranti semiconductor networks are arrays of interconnected or isolated semiconductor dice encapsulated in a single multilead package. In addition to a useful range of standard arrays, Ferranti offer a custom -build engineering service to


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    2N2060 BS9300 2N2223 2N2223A ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 Ferranti Semiconductors "dual TRANSISTORs" C479 ZDT40 ZDT41 PDF

    2M222

    Abstract: 2n2223 2N2223A
    Text: TYPES 2N2060, t W l i n . . 2M2223A DUAL N-P-N SILICON TRANSISTORS B U L L E T I N N O . D L - S 721 1678, M A R C H 1972 TW O T R A N S IS T O R S IN O N E P A C K A G E F O R D IF F E R E N T IA L A M P L IF IE R A P P L IC A T IO N S • Medium Power •


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    2N2060, 2M2223A 2N2060 2M222 2n2223 2N2223A PDF

    2N2060

    Abstract: No abstract text available
    Text: PLESSEY SEMICOND/DISCRETE 7220533 PLESSEY TS DËT| 7 2 2 n 5 3 3 S E M IC O N D / D IS C R E T E 95D ! □ □ □ 4 ci 7 0 04970 r - * ? - 2-7 SEMICONDUCTOR NETWORKS | j ! j j Ferranti sem iconductor networks are arrays of interconnected or isolated sem iconductor dice


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    ZDT40 ZDT41 ZDT42 ZDT44 ZDT45 2N2060 2N2223 2N2223A 2N2060, 2N2223, 2N2060 PDF

    N3055

    Abstract: ZDT30 2N3440 2N3055 2N3439 ZT1480 ZT1482 ZT1484 ZT1486 ZT1488
    Text: S ILIC O N TR A N SISTO R S High Voltage n-p-n The transistors listed in the table below have maximum coliector-emitter voltage ratings of 100 volts or higher and may therefore be used in applications where high voltages are encountered. Further information on these transistors can be found on the page indicated in the last column of the table, or on request from Ferranti Ltd.


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    ZT1480 ZT1482 ZT1484 ZT1486 ZT1488 ZT1490 2N3055 2N3439 2N3440 2N3441 N3055 ZDT30 PDF

    2C415

    Abstract: SGS-ATES dual 2c425 2C425 2C111 2C444 BFX36 BFX81 BFX79 sgs-ates transistors BFY83
    Text: S G S -A T E S Sem iconductors Transistors-Dual Dual Transistors NPN and PN P REFERENCE T A B L E Code Polarity Max. P0(W) Min. LVCEO Ic Range (mA) Min. Max. hFE & VCE(sat) BFX11 I’ NP 0.5 45 0.001-500 80 BFX36 PNP 0.6 60 0 .0 01 -1 0 0 100 0.25 - @ hFE,


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    BFX11 19040F BFX36 9048A BFY81 9072A BFY82 19073X BFY83 19074H 2C415 SGS-ATES dual 2c425 2C425 2C111 2C444 BFX81 BFX79 sgs-ates transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: SbE D • =^70576 ÜGD7ÜE3 TTS « Z E T B SEMICONDUCTOR NETWORKS ST A N D A RD PRODUCTS - SILICON PLANAR DUAL TRA N SISTO RS A range of dual transistors for differential amplifiers and other applications requiring matched transistors with a high degree of parameter uniformity, encapsulated in multilead TO-5.


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    ZDT41 ZDT44 ZDT45 2N2060 2N2223A PDF

    2N3050

    Abstract: 2N2804 2N2640
    Text: "SEMICONDUCTOR TECHNOLOGY GSE D | fll3t.45fl □□□0230^4 | r ^ f - 27 ËHÏ' SILICO N DUAL DIFFERENTIAL AMPLIFIER TRANSISTORS STIType Polarity Pow er Dissipation Total @ 2 5 °C ( M in .) hF E lc MATCHING v CE0 (volts) (Min.) (Max.) mA hFE(%) MW v b e (m v )


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    2N2Q60 2N2060A 2N2060B 2N2223 2N2223A 2N2453 2N2639 2N2640 2N2641 2N2642 2N3050 2N2804 PDF

    2N2936

    Abstract: 2N2414 2N2453 2N2805 2N2806 2N2937 2N2803 DUAL TRANSISTORS IN TO77 PACKAGE PNP TO77 package 2n2804
    Text: Transistors Discrete Devices Differential and D u al Am plifiers Type Polarity One Side mW Tracking Electrical Characteristics @ 25° C One Side Maximum Ratings Ambient Po hfe Both VC B VCE V e B Sides Volts Volts Volts mW Min/Max VcE(Sat) @ Ic/lß ic


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    2N2060 2N2060A 2N2060B 2N2223 2N2223A 2N2414 2N2919A 2N2920 2N2920A 2N2936 2N2453 2N2805 2N2806 2N2937 2N2803 DUAL TRANSISTORS IN TO77 PACKAGE PNP TO77 package 2n2804 PDF

    2N3055

    Abstract: 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79
    Text: Illl iF ti mi Semelab Mil / Aerospace Division NATO LISTED TRANSISTO R PRO D UCT Semelab is listed and supplies transistors for use in NATO military systems. Semelab’s CAGE number is U3158. Below is a SELECTION from the 740 device types listed. NATO NUMBER


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    U3158. BUV22 BUV23 BUV26 BUV39 BUV47 BUV50 BUV51 BUV52 BUV61-CECC-QR 2N3055 2N3055H BDY25C bu103a 2n2243 transistor U3158 transistor BUX22 bu102 TRANSISTOR BSW68A Transistor BFX79 PDF

    2N2210

    Abstract: 2N2223 200H 250M T018 T072 2N1724A 706A
    Text: MfiE D m fll331fi7 □□□□433 31T • SMLB SEMELABtSEMELAB BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Rei Code 2N 696 2N 697 2N 706 2N 706A 2N 718A 2N 720A 2N 722 2N 869 2N 869A 2N 914 2N 915 2N 916 2N 918 2N 930 2N 930A 2N1132 2N1483A 2N1484A


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    D00aM33 40min 75min 20min l/10m 25min 5/10m 2N2210 2N2223 200H 250M T018 T072 2N1724A 706A PDF