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    2N2369 DATA SHEET Search Results

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    NFMJMPC226R0G3D Murata Manufacturing Co Ltd Data Line Filter, Visit Murata Manufacturing Co Ltd
    NFM15PC755R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC435R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    NFM15PC915R0G3D Murata Manufacturing Co Ltd Feed Through Capacitor, Visit Murata Manufacturing Co Ltd
    MP-52RJ11SNNE-100 Amphenol Cables on Demand Amphenol MP-52RJ11SNNE-100 Shielded CAT5e 2-Pair RJ11 Data Cable [AT&T U-Verse & Verizon FiOS Data Cable] - CAT5e PBX Patch Cable with 6P6C RJ11 Connectors (Straight-Thru) 100ft Datasheet

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    2N2369

    Abstract: transistor 2n2369 J 2N2369 BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2369 NPN switching transistor Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 Jun 20 Philips Semiconductors Product specification NPN switching transistor 2N2369


    Original     		PDF M3D125 2N2369 MAM264 SCA54 117047/00/02/pp8 2N2369 transistor 2n2369 J 2N2369 BP317

    2n2369

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2n2369

    2N2369A

    Abstract: 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A* NPN Silicon *Motorola Preferred Device 2 BASE 1 EMITTER 3 Rating Symbol Value Unit Collector – Emitter Voltage VCEO


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369A 2N2369 2N2369 equivalent 2N2369A MOTOROLA J 2N2369 1N916 2N3227 input impedance of 2N2369 motorola 2n2369

    2N2369

    Abstract: 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916
    Text: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO 15


    Original     		PDF 2N2369/D 2N2369 2N2369A* 2N2369/D* 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 motorola 2N2369 equivalent 2N2369 datasheet input impedance of 2N2369 data sheet J 2N2369 motorola 2n2369 1N916

    2N2369

    Abstract: 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die 2C2369A chip type geometry
    Text: Data Sheet No. 2C2369A Generic Packaged Parts: Chip Type 2C2369A Geometry 0005 Polarity NPN 2N2368, 2N2369, 2N3227, 2N4449 Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high


    Original     		PDF 2C2369A 2N2368, 2N2369, 2N3227, 2N4449 2C2369A 2N2369A, 2N2369 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die chip type geometry

    2369A

    Abstract: 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz
    Text: 2N2369, 2369A High Speed Switching Transistors Features: • NPN Silicon Planar Epitaxial Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. • 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power


    Original     		PDF 2N2369, 2N2369/A 2369A 2N2369 2N2369 datasheet 2N2369 transistor J 2N2369 2N2369A 100MHz-500MHz

    2N2369

    Abstract: 2N2369 transistor J 2N2369 2N2369A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A 300us, 2N2369 2N2369 transistor J 2N2369 2N2369A

    2N2369

    Abstract: 2N2369A NPN/2N2369
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A T100mA, 300us, 2N2369 2N2369A NPN/2N2369

    2N2369 transistor

    Abstract: J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With


    Original     		PDF 2N2369 2N2369A 2N2369/A C-120 2N2369 transistor J 2N2369 2n2369 IC 13 J 2N2369A 2N2369A

    2N2369 equivalent

    Abstract: 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook
    Text: 2N2369 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL “@ HIGH-SPEED for SWITCHING @ @ APPLICATIONS e e . Switching Times and Saturation Voltage Specified at Two Current Levels l= at 10 mA and 100 mA ● @ @ Low Input and Output Capacitance CO~= Ci~ = 4 pf matimum


    Original     		PDF 2N2369 2N3227 2N2369 equivalent 2N3227 2N2369 transistor equivalent transistor 2N2369 2N3227 MOTOROLA 2N2369 D4613 2N3221 transistor 2n2369 motorola semiconductor handbook

    J 2N2369

    Abstract: 2N2369 2N2369A
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


    Original     		PDF 2N2369 2N2369A 2N2369/A C-120 J 2N2369 2N2369 2N2369A

    2N2369

    Abstract: J 2N2369 2N2369A
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N2369 2N2369A TO-18 APPLICATIONS 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power & High Speed Switching Applications.


    Original     		PDF ISO/TS16949 2N2369 2N2369A 2N2369/A C-120 2N2369 J 2N2369 2N2369A

    Lt1016

    Abstract: sn1016 lt1016 equivalent LT1220
    Text: LT1016 UltraFast Precision 10ns Comparator FEATURES • ■ ■ ■ ■ ■ U ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 T1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs Lt1016 lt1016 equivalent LT1220

    LT1220

    Abstract: No abstract text available
    Text: LT1016 UltraFast Precision 10ns Comparator Features n n n n n n n Description UltraFast 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016, LT1016 100MHz LT1715 150MHz LT1719/LT1720/LT1721 LT1220

    sn1016

    Abstract: ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent LT1016
    Text: LT1016 UltraFast Precision 10ns Comparator U FEATURES • ■ ■ ■ ■ ■ ■ DESCRIPTIO UltraFastTM 10ns typ Operates Off Single 5V Supply or ±5V Complementary Output to TTL Low Offset Voltage No Minimum Input Slew Rate Requirement No Power Supply Current Spiking


    Original     		PDF LT1016 LT1016 LT1711/LT1712 LT1713/LT1714 LT1715 150MHz LT1719/LT1720/LT1721 sn1016 1016fcs ATIC-17 2N2369 transistor pulse generator LT1016CN8 RCA 2N3866 dual fet q51 74121 application as pulse generator 2N3866 APPLICATION sn7402 equivalent

    2n2222a SOT23

    Abstract: 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23
    Text: DISCRETE SEMICONDUCTORS DATA SHEET Conversion list Small-signal transistors Product specification File under Discrete Semiconductors, SC04 1997 Aug 06 Philips Semiconductors Product specification Small-signal transistors Conversion list SC04/CATEGORY CROSS REFERENCE PER PACKAGE


    Original     		PDF SC04/CATEGORY SC-59 OT143 OT323 OT363 SC-75 OT223 BC107 BC108 BC109 2n2222a SOT23 2n3906 sot23 2N3904 sot323 BC557 SOT23 2n2222a SOT223 2n2222 sot323 bd139 sot23 2n3904 sot23 philips bc107 sot23 2N5551 SOT23

    4 Position 16 Pin PdT dip switch

    Abstract: 74ALS00 74ALS74 National 74hc04 cdi schematics 74LS165 74LS92 AN-502 C1995 DP8459
    Text: I INTRODUCTION This literature describes the hardware and function of a printed circuit board for the evaluation of National Semiconductor’s DP8459 All Code PLL Data Synchronizer The purpose of the board is to assist the user of the chip in becoming familiar with the device features and in understanding its operation The board is configured socketed


    Original     		PDF DP8459 28-pin DP8459V) 4 Position 16 Pin PdT dip switch 74ALS00 74ALS74 National 74hc04 cdi schematics 74LS165 74LS92 AN-502 C1995

    Endevco 2215

    Abstract: 2n2222 h parameter values HP5082-4204 LT1010 TO-5 hp5082-2810 2N2222 circuit Endevco 104 HP5082-4204 photodiode Endevco amplifier Power AMPLIFIER 6012
    Text: LT1022 High Speed, Precision JFET Input Operational Amplifier U FEATURES • ■ ■ ■ ■ ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:


    Original     		PDF LT1022 180pA 500pA 254mm) 1022fa Endevco 2215 2n2222 h parameter values HP5082-4204 LT1010 TO-5 hp5082-2810 2N2222 circuit Endevco 104 HP5082-4204 photodiode Endevco amplifier Power AMPLIFIER 6012

    2N2222 chip

    Abstract: HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A
    Text: LT1022 High Speed, Precision JFET Input Operational Amplifier FEATURES • ■ ■ ■ ■ U ■ DESCRIPTIO Guaranteed Slew Rate: 23V/µs Min Guaranteed Offset Voltage: 250µV Max – 55°C to 125°C: 750µV Max Guaranteed Drift: 5µV/°C Max Guaranteed Bias Current:


    Original     		PDF LT1022 180pA 500pA 254mm) 1022fa 2N2222 chip HP-5082-4204 2n2222 h parameter values HP5082-4204 Endevco 2215 LT318A

    2N2369 AVALANCHE PULSE GENERATOR

    Abstract: 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501
    Text: Application Note 94 May 2003 Slew Rate Verification for Wideband Amplifiers The Taming of the Slew Jim Williams INTRODUCTION Slew rate defines an amplifier’s maximum rate of output excursion. This specification sets limits on undistorted bandwidth, an important capability in A/D driver applications. Slew rate also influences achievable performance in


    Original     		PDF AN94-11 AN94-12 an94f 2N2369 AVALANCHE PULSE GENERATOR 2N2369 transistor pulse generator 2n2369 avalanche Avalanche Transistor Circuits for Generating nanosecond pulse generator Avtech PICO Electronics 1000V TD1110C ten pao transformer 2N2501

    ignition module

    Abstract: 2n2369 avalanche cdi ignition timing advance irf740 application note car cdi ignition cdi ignition ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark o f International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF AN966: AN-969 ignition module 2n2369 avalanche cdi ignition timing advance irf740 application note car cdi ignition cdi ignition ELECTRONIC CENTRIFUGAL SWITCH design of ignition and fuel system 800RPM cdi ignition circuit

    mosfet to ignition coil

    Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition

    voltage controlled pulse width generator

    Abstract: 2N2369
    Text: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking


    OCR Scan     		PDF LT1016 LT1016 LT1016. voltage controlled pulse width generator 2N2369

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


    OCR Scan     		PDF