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    2N2369 DIE Search Results

    2N2369 DIE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    ISL70062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL70061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73062SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A NMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    ISL73061SEHX/SAMPLE Renesas Electronics Corporation Radiation Hardened 10A PMOS Load Switch, DIE, /Die Waffle Pack Visit Renesas Electronics Corporation
    HS0-26CT31RH-Q Renesas Electronics Corporation Radiation Hardened Quad Differential Line Drivers, DIE, / Visit Renesas Electronics Corporation

    2N2369 DIE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N2369

    Abstract: 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die 2C2369A chip type geometry
    Text: Data Sheet No. 2C2369A Generic Packaged Parts: Chip Type 2C2369A Geometry 0005 Polarity NPN 2N2368, 2N2369, 2N3227, 2N4449 Chip type 2C2369A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for high


    Original     		PDF 2C2369A 2N2368, 2N2369, 2N3227, 2N4449 2C2369A 2N2369A, 2N2369 2N2369 datasheet 2N2368 2N3227 Am29BDD160GB-65ADPE1 2N2369A 2N4449 2n2369 die chip type geometry

    2n222a

    Abstract: 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) MIN MIN MIN MAX hFE (V) @ IC (mA) MIN VCE (SAT ) @ IC Cob (V) (mA) MAX fT (pF) (MHz) NF Typ † (dB)


    Original     		PDF O-116 MPQ2222 2N2222 MPQ2222A 2N222A MPQ2369 2N2907 MPQ6700 2N3904 2n222a 2n222a datasheet 2n222a npn 2n3762 MPQ6700 2N2907 equivalent 2X PNP MPQ7053 2N2222 pnp MPQ3762

    2N3906

    Abstract: 2N2222 hfe 2N3904 NPN dip
    Text: Quad Transistors TO-116 Case 14 Pin DIP TC (@ 25oC)=3.0 Watts Total ( 4 Die Equal Power) TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ VCB (V) (V) (V) (nA) hFE (V) @ IC VCE (SAT ) @ IC (mA) (V) MIN (mA) MAX Cob fT (pF) (MHz) NF Typ † (dB) tOFF COMMENTS


    Original     		PDF O-116 MPQ2222 MPQ2222A MPQ2369 MPQ2483 MPQ2484 MPQ2907 MPQ2907A MPQ3467 MPQ3725 2N3906 2N2222 hfe 2N3904 NPN dip

    Untitled

    Abstract: No abstract text available
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs,

    2N3866 application note

    Abstract: 2N5160 2N2369 transistor pulse generator LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671f 2N3866 application note 2N5160 2N2369 transistor pulse generator LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8

    2N3866 application note

    Abstract: transistor 2n2369 LT1016 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866
    Text: LT1671 60ns, Low Power, Single Supply, Ground-Sensing Comparator U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO Low Power: 450µA Fast: 60ns at 20mV Overdrive 85ns at 5mV Overdrive Low Offset Voltage: 0.8mV Operates Off Single 5V or Dual ±5V Supplies


    Original     		PDF LT1671 LT1394, LT1016 LT1116 LT1016 LT1394 LT1720 1671fs, 2N3866 application note transistor 2n2369 LT1116 LT1394 LT1671 LT1671CMS8 LT1671CS8 LT1671IS8 Transistor 2N3866

    Instruments

    Abstract: AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos
    Text: Application Note 13 April 1985 High Speed Comparator Techniques Jim Williams INTRODUCTION Comparators may be the most underrated and underutilized monolithic linear component. This is unfortunate because comparators are one of the most flexible and universally applicable components available. In large


    Original     		PDF 2N2369 HP5082-2810 2N3866 2N5160 LT1016 2N2369 an13f AN13-32 Instruments AN13F IC 7404 GP ttl ceramic oscillator using 7404 HP-HEMT-6000 precision Sine 1Mhz Wave Generator sinewave-generator of ic 7475 used in fastest finger first ttl 7474 sine wave 7404 ttl inverter photos

    AN72

    Abstract: AN72F PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849
    Text: Application Note 72 May 1998 A Seven-Nanosecond Comparator for Single Supply Operation Guidance for Putting Civilized Speed to Work Jim Williams INTRODUCTION In 1985 Linear Technology Corporation introduced the LT 1016 Comparator. This device was the first readily


    Original     		PDF LT1016 LT1016, LT1394, AN72-41 90VDC AN72-42 V-to-90V AN72-43 AN72-44 an72f AN72 PM-5771 2N2369 avalanche an7212 2N2369 AVALANCHE PULSE GENERATOR an7210 application circuits of ic 74121 LM733 2tx-849

    HP 2602

    Abstract: hp2602 LM11 op amp HP-2602 "Secret Life of Capacitors" 2N2222-2N2369 Cambridge KELVIN-VARLEY voltage DIVIDER dielectric absorption KELVIN-VARLEY DIVIDER
    Text: National Semiconductor Application Note 260 January 1981 By combining an ‘‘inferior’’ 20 year old A D conversion technique with a microprocessor a developmental A D converter achieves 1 part-per-million 20-bit linearity The absolute accuracy of the converter is primarily limited by the


    Original     		PDF 20-bit) HP 2602 hp2602 LM11 op amp HP-2602 "Secret Life of Capacitors" 2N2222-2N2369 Cambridge KELVIN-VARLEY voltage DIVIDER dielectric absorption KELVIN-VARLEY DIVIDER

    HP 2602

    Abstract: LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070
    Text: National Semiconductor Application Note 260 January 1981 By combining an “inferior”, 20 year old A/D conversion technique with a microprocessor, a developmental A/D converter achieves 1 part-per-million 20-bit linearity. The absolute accuracy of the converter is primarily limited by the voltage


    Original     		PDF 20-bit) HP 2602 LM11 op amp HP2602 HP-2602 2n22222 "Secret Life of Capacitors" LM11 OP KELVIN-VARLEY DIVIDER LM11 national INS8070

    micronote 103

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector GA102 DIODE ga101 UM9441 radiation ionizing dose TID detector Semiconductor Radiation Detector high sensitive neutron PIN diode pin diode gamma detector
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


    Original     		PDF

    2n2369 avalanche

    Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
    Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010


    Original     		PDF 2N1131 2N718A 2N1711 2N4949 5961-E084 5980-E011 5980-E010 5961-E087 5961-E079 2n2369 avalanche 2N7373 gc. marking 2N2222 2N2369 2N2432 2N2484

    pin diodes radiation detector

    Abstract: 2n2369 avalanche Semiconductor Nuclear Radiation Detector DIODE ga101 Semiconductor Radiation Detector radiation ionizing dose TID detector pin diodes nuclear radiation detector 1N829A 2N2369 2N3032
    Text: MicroNote #050 by: Radiation Hardened Performance of Discrete Semiconductor Products Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military programs, but has now evolved to


    Original     		PDF

    2N2369 avalanche

    Abstract: Microsemi micronote series 050 Semiconductor Nuclear Radiation Detector DIODE ga101 pin diodes radiation detector UM9441 Microsemi Generic Diode nuclear radiation detector diode GA100 radiation ionizing dose TID detector
    Text: Spring 1998 MicroNote Series 050 by Kent Walters, Microsemi Scottsdale Radiation Hardened Performance of Discrete Semiconductors Many system designs have required radiation hardness assurance for semiconductor products. In earlier years this primarily dealt with military


    Original     		PDF

    2N702

    Abstract: 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N743 2N914
    Text: MOTOROLA I SC -CDIODES/OPTOJ- 6367255 MOTOROLA SC 34 D Ü j|fc .3 h 7 E 5 S D IO D E S /O P TO 34C □ U ^ Ï T r '5 37975 "I D T'35-J5 SILICO N SM A LL-SIG N A L TR A N SISTO R DICE (continued) 2C2369A DIE NO. — NPN LINE SOURCE — DMB103 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF 35-J5 DMB103 2N702 2N703 2N706 2N708 2N743 2N744* 2N753* 2N834 MPS3564 MPS914 2N744 2N3011 2N5224 2N835 2N914

    PNP 2N3904

    Abstract: 2N2222 2N2222 pnp 2N3906
    Text: Quad Transistors* TO-116 Case 14PinDip Tc (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b o bvceo bvebo 00 00 00 (nA) 1m MIN MIN MAX 'CBO VCBO hFE vC E(SAt) • *C (mA) w MIN (V) (mA) MAX ^ob *r (PF) MAX Mm NF *OFF COMMENTS my


    OCR Scan     		PDF O-116 14PinDip) MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6100A PNP 2N3904 2N2222 2N2222 pnp 2N3906

    PIN CONFIGURATION 2N2222

    Abstract: 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION bvc b o bvoeo bvebo <CBO VCBQ 00 (V) (VÏ <nA) MIN MIN MIN MAX *»f e 0 IC (iffA) (V) MIN VCE(SAT) <V) ® 'C (m Ai MAX c ob *T NF *0 FF COMMENTS


    OCR Scan     		PDF O-116 2N2222 MPQ2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PIN CONFIGURATION 2N2222 2n2222 pin PNP 2N3904 2N2222 2N2222 pnp

    2N2222 pnp

    Abstract: 2X PNP TRANSistors PNP 2N3904 2N2222 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip
    Text: Quad Transistors* TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVc b O b v c e o b v e b o ICBO (V) (V) (V) <nA) MIN MIN MIN MAX @ v CBO hpE @ *c (m A ) (V) MIN VC E (5AT) (V) lC <mA) MAX c ob *r (pF) (MHz)


    OCR Scan     		PDF O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 2N2222 pnp 2X PNP TRANSistors PNP 2N3904 PIN CONFIGURATION 2N2222 2n3904 225 MP03906 2N3906 2N3906D 2N2222 dip

    PNP 2N3904

    Abstract: 2n2222 pin 2N2222 2N2222 pnp 2N3906
    Text: Quad Transistors* '^00 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0Watts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BVq b o bvceo BVe b o 00 (Vi (V) (nA) MIN MIN MIN MAX *CBO v CBO hpE @ iC (mA) (V) MIN VCE(SAT) ® 'C (V) (mA) MAX ^ob *T NF *OFF COMMENTS


    OCR Scan     		PDF O-116 MPQ2222 2N2222 MPQ2369 2N2369 MPQ2483 2N2483 MPQ2484 MPQ6502 PNP 2N3904 2n2222 pin 2N2222 2N2222 pnp 2N3906

    PIN CONFIGURATION 2N2222

    Abstract: 2N2907 NPN Transistor 2N2222 PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053
    Text: Quad Transistors* '^ 0 0 TO-116 Case 14 Pin Dip T q (@ 25°C)=3.0W atts Total (4 Die Equal Power) TYPE NO. DESCRIPTION BV c b Q b v c e o b v e b o iCBO * ? v CBO (V) (V) 00 (nA) MIN MIN MIN MAX NFe @*c <rr»A> (V) MIN VCE(SA r) 00 @*c <mA) MAX c ob *T NF


    OCR Scan     		PDF O-116 mpq2222 2N2222 mpq2369 2N2369 mpq2483 2N2483 mpq2484 2N2484 mpq2907 PIN CONFIGURATION 2N2222 2N2907 NPN Transistor PNP 2N3904 2N2222 pnp 2N3906 MPQ3762 2N3799 DIP 2X PNP TRANSistors MPQ7053

    mosfet to ignition coil

    Abstract: 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition
    Text: APPLICATION NOTE 969 Economic, High Performance, High Efficiency Electronic Ignition with Avalanche-Rated HEXFETs HEXFET is a trademark of International Rectifier by Brian E. Taylor Introduction Gasoline engine ignition circuits represent a severe environment for


    OCR Scan     		PDF 00V/DIV AN966: AN-969 mosfet to ignition coil 2n2369 avalanche cdi ignition ignition module capacitor, 100 microfarad and 35 volts Electronic car ignition circuit 6 volt coil ignition cdi ignition timing advance car cdi ignition advance ignition

    voltage controlled pulse width generator

    Abstract: 2N2369
    Text: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking


    OCR Scan     		PDF LT1016 LT1016 LT1016. voltage controlled pulse width generator 2N2369

    ci sn7402

    Abstract: voltage controlled pulse width generator 1HZ-10MHZ 74121 application as pulse generator LT1016 ultra fast comparator application note LT1016CN 50GHz mosfet LT1016MJ LT1016CJ
    Text: _ LT1016 Ultra Fast Precision Comparator FCflTURCS DCSCRIPHOn • Ultra Fast 10ns typ ■ Operates Off Single +5V Supply, or ±5V ■ Complementary Output to TTL ■ Low Offset Voltage ■ No Minimum Input Slew Rate Requirement ■ No Power Supply Current Spiking


    OCR Scan     		PDF LT1Q16 LT1016 LT1016 45-C/W 100-C/W ci sn7402 voltage controlled pulse width generator 1HZ-10MHZ 74121 application as pulse generator ultra fast comparator application note LT1016CN 50GHz mosfet LT1016MJ LT1016CJ

    lt1016

    Abstract: 2N2369 transistor pulse generator
    Text: LT1016 Ultra Fast Precision Comparator F€OTUR€S DCSCRIPTIOn • Ultra Fast 10ns typ ■Operates Off Single + 5V Supply, or ± 5V ■ Complementary Output to TTL The LT1016 is an ultra fast (10ns) comparator specifi­ cally designed to interface directly to TTL logic while


    OCR Scan     		PDF LT1016 LT1016 LT1016. 2N2369 transistor pulse generator