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    2N2726 Search Results

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    2N2726 Price and Stock

    Microchip Technology Inc 2N2726

    SMALL-SIGNAL BJT
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    Future Electronics 2N2726 100
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    Microchip Technology Inc 2N2726 22 Weeks
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    Onlinecomponents.com 2N2726
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    NAC 2N2726 23
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    Master Electronics 2N2726
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    Silicon Transistor Corporation 2N2726

    POWER BIPOLAR TRANSISTOR, 0.5A I(C), 1-ELEMENT, NPN
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    Quest Components 2N2726 318
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    GTCAP 2N2726

    POWER BIPOLAR TRANSISTOR, 0.5A I(C), 1-ELEMENT, NPN
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    Quest Components 2N2726 8
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    2N2726 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N2726 Central Semiconductor NPN SILICON TRANSISTOR Original PDF
    2N2726 Central Semiconductor Small Signal Transistors TO-39 Case Original PDF
    2N2726 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N2726 Central Semiconductor Leaded Small Signal Transistor General Purpose Scan PDF
    2N2726 General Diode Transistor Selection Guide Scan PDF
    2N2726 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N2726 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N2726 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N2726 Unknown GE Transistor Specifications Scan PDF
    2N2726 Unknown Transistor Replacements Scan PDF
    2N2726 Unknown GE Transistor Specifications Scan PDF
    2N2726 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N2726 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N2726 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N2726 Unknown Vintage Transistor Datasheets Scan PDF
    2N2726 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N2726 PPC Products Transistor Short Form Data Scan PDF
    2N2726 Semiconductor Technology High Voltage Silicon Low and Medium Power Transistors Scan PDF
    2N2726 Semitronics Silicon Power Transistors Scan PDF

    2N2726 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    motorola bf758

    Abstract: BF758 2SC1304 B0159 MOS60 2N6559 BF757 2SC2752L 45M100U
    Text: POWER SILICON NPN Item Number 10 < 1 A, MJE344K 2N2726 2N3589 2N3591 2N3593 2N3595 BF391P BF391P BF391P MPSW43 ~rf~;3 15 20 2N6592 ZTX656 2N2727 2N3590 2N3592 2N3594 2N3596 MJ2251 ~b~~~ 25 30 B0127 80127 B0157 S627T 2N5655 S1377 2N6593 BF757 ~~~~~7 35 40 BF392P


    Original
    202AC 127var 220AB 252var 2SC358SZ' 2SC3588Z 2SC2752L 2S01350 motorola bf758 BF758 2SC1304 B0159 MOS60 2N6559 BF757 45M100U PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N2726 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)200ã V(BR)CBO (V)200 I(C) Max. (A)500m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    2N2726 Freq15M PDF

    2N1990

    Abstract: No abstract text available
    Text: na. 20 STERN AVE. SPRINQRELD, NEW JERSEY 07081 U.SA TYPE NO DESCRIPTION VCBO VCEO V M Small Signal Transistors VEBO teo« VCB (MA) M M IFE et «vc (mA) 00 Vce(SAT)«lc M (mA) •CEO "ICES -ICEV —ICEH *VCER MIN MIN MIN 2N1975 NPNAMPUSWnrCH 100 60 7.0 2N1983


    Original
    2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N19B8 2N2800 2N2S01 2N1990 PDF

    BSV12

    Abstract: BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252
    Text: Small Signal Transistors TO-39 Case TYPE NO. DESCRIPTION VCBO V VCEO (V) VEBO (V) *VCER ICBO @ VCB ( A) (V) hFE @ IC @ VCE VCE(SAT) @ IC (mA) (V) (V) (mA) *ICEO *ICES *ICEV *ICER MAX fT Cob (MHz) (pF) ton (ns) toff (ns) NF (dB) *TYP *TYP *TYP *TYP *TYP


    Original
    2N656A 2N657A 2N696 BSV12 BSW65 SE7001 BC461 2N5322 2N3444 MJ421 2N4358 2n697a 2N1990 2N3252 PDF

    2N2405

    Abstract: 2N2476 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO (V) VCEO (V) VEBO (V) *VCER ICBO @ µA) (µ VCB (V) hFE @ IC @ VCE VCE (SAT) @ IC fT (mA) (V) (V) (mA) (MHz) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP


    Original
    2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801 2N2405 2N2476 2N1975 2N1983 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 PDF

    2N2648

    Abstract: BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601
    Text: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 BCX59-7 BC107AP BC560 BCY59 BCY59VII BC582 BC582 BC582 2N3043 2N3044 2N304:, 2N2642 2N2643 2N2644 JC501P BCY76 BCY76 MD2974


    Original
    BC237-5 BC237A BC237A18 BC237A5 BCX70G BCX70R ZTX237 BC167 BC167A BCX70 2N2648 BC107BP 2N2709 delco 2N2606 2N3247 2N2646 texas 2N2624 2N2611 2N2601 PDF

    2n1983

    Abstract: 2N1990 2N1975 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION VCBO VCEO (V) (V) VEBO (V) *VCER ICBO ( A) @ VCB hFE @ IC @ VCE VCE(SAT) @ IC fT (mA) (V) (V) (mA) (MHz) (V) *ICEO *ICES *ICEV *ICER MAX Cob (pF) ton (ns) toff (ns) (dB) NF *TYP *TYP *TYP


    Original
    2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801 2N2237 2n1983 2N1990 2N1975 2N1984 2N1985 2N1986 2N1987 2N1988 2N1989 2N2017 PDF

    2SK847

    Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
    Text: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247


    Original
    2SK696 O-247 2SK719 2SK696A O-205AD/TO-39: 2N3374 2N3352 2SK847 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794 PDF

    2N2201

    Abstract: 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 2N2008 2N3114 2N3498 2N3499 2N3500
    Text: 8134693 SEMICQA NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS Cont’d Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2K3501 2N4926 2N2726 2N2727 40412 2N4927 2N3440 2N5279 2N3439 2N5092 Electrical Characteristics @ 25°C Maximum Ratings


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    DDDQ133 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2N3500 2k4037 2N3637 semicoa npn general purpose medium speed 2N4358 PDF

    JANTX2N5109

    Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
    Text: Microsemi NPN Transistors Part Number 2N5109 JAN2N5109 JANTX2N5109 JANTXV2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001


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    2n4929

    Abstract: No abstract text available
    Text: 8 1 3 4 6 9 3 SEMICQA _ MD DE | 6]i3Llb ,:i3 □□□□133 p £*7 ~ D \ NPN GENERAL PURPOSE MEDIUM SPEED AMPLIFIERS C ont’d Maximum Ratings Type NPN 2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2NB500 2K3501 2N4926 2N2726 2N2727


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    2N3498 2N3499 2N2201 2N2008 2N3923 2N3712 2N3114 2K4925 2NB500 2K3501 2n4929 PDF

    2N2727

    Abstract: 2N2726 npn VCE 100V
    Text: 2N2726 2N2727 Central Semicondut? 3^ 4 *?•. Central Semiconductor Corp. NPN SILICON TRANSISTOR Central semiconductor Corp. JEDEC TO-39 CASE 1 4 5 Adams Avenue Hauppauge, New York 11 7 8 8 DESCRIPTION The CENTRAL SEMICONDUCTOR 2N2726, 2N2727 types are Silicon NPN Transistors designed for


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    2N2726 2N2727 2N2726, 2N2726 2N2727 200mA npn VCE 100V PDF

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


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    2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF

    Untitled

    Abstract: No abstract text available
    Text: small signal Transistors D ESCR IPTIO N Vc b O VC EO v EB O V (V) (V) *V C ER hFE 'C B O v C B O ftiA ) (V) @ lc (m A) (V) m TY P E NO. < o T O -39 Case V C E (S A T) ® *C (V) (m A) *>CEO h C0 b ton toff NF (M H z) <PF) (ns) (ns) (dB ) *TY P *TY P


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    2N656A 2N657A 2N696 2N697A 2N698 2N699B 2N1053 2N1116 2N1117 2N1118 PDF

    2N295

    Abstract: 2N2891 2N223
    Text: central se hi co nd u ct or bi D F | n a n t . 3 o o o o s it, 1 9 8 9 9 6 3 CENTRAL SEMICC3NDUCTOFr ' " _ 6 IC 00 216 NPNM ETALCA N -SW ITC H IN G AND GENERAL PURPOSE Cont'd. i — 21 h CDb MHz pF 8 8 8 8 8 < o 00 at VCE V V 2N2219 2N2219A 2N2220 2N2221


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    2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 2N2237 2N2243 2N295 2N2891 2N223 PDF

    MD14

    Abstract: 2N4069 2N4358 2N4438 2N2726 2N2727 2N2858 2N2859 2N2989 2N2990
    Text: SEM ICO NDUCTO R TECHNOLOGY O SE D I fll3 h 4 5 fl O D D O S l? s £ Jay Sueet SEMICONDUCTOR TECHNOLOGY, INC. HIGH VOLTAGE SILICON LOW AND MEDIUM POWER TRANSISTORS Stuart. Florida 34S37 407 283-4500 • TWX - 5 1 0 -9 5 - W b '• FAX 407-286-891'! MPN & p n p


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    34S37 510-953-7b' 2N2726 2N2727 2N2858 2N2859 N2988 2N2989 2N5058 N5059 MD14 2N4069 2N4358 2N4438 2N2990 PDF

    transistor 2N4

    Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
    Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION


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    PDF

    Untitled

    Abstract: No abstract text available
    Text: Small signal Transistors TO-39 Case Continued TYP E NO. D ESCRIPTION V CBO v CEO v EBO •C B O v CBO (V) (V) (V) *V CER Ü1A) e ie h FE <mA) (V) evCE V CE(SA T) ® *C (V) (V) ♦r (m A) Cob (MHz) *'CEO *on (n*) *otf NF (dB) *TYP (PF) TYP TYP (ns) *TYP


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    2N1975 2N1983 2N1984 2N2658 2N2726 2N2727 2N2800 2N2801 PDF

    2N1983

    Abstract: 2N21n 2N1987 2N1990 2N2309 2N1975 2N1984 2N1985 2N1986 2N1988
    Text: Small Signal Transistors TO-39 Case Continued TYPE NO. DESCRIPTION V CBO v CEO v EBO •C B O VC BO (V) (V) CO <MA) e ie h FE 8 VCE VCE(SA T ) ® <C <mA) (V) (V) 00 (mA) ♦r (MHz) Cob *on toff NF <ns) (dB) *TYP (PF) TYP (n *) TYP *TYP TYP MIN MIN MIN


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    2N1975 2N1983 2N1984 2N1985 2N1986 2n2594 2n2657 2n2658 2n2726 2N2727 2N21n 2N1987 2N1990 2N2309 2N1988 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Text: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


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    2N339 2N339A 2N340 2N340A 2N341 2N341A 2N342 2N342A 2N343 2N343A Transistors 2n551 Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    2N2222A mps

    Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
    Text: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71


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    1N34A 1N55AB 1N100 1N102 1N103 1N104 1N107 1N108 1N111/ 1N117 2N2222A mps 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304 PDF