2N2907A SEMICOA
Abstract: 2N2907A equivalent 2N2907A
Text: Data Sheet No. 2N2907A Generic Part Number: 2N2907A Type 2N2907A Geometry 0600 Polarity PNP Qual Level: JAN - JANS REF: MIL-PRF-19500/291 Features: • • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-18 case.
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2N2907A
MIL-PRF-19500/291
MIL-PRF-19500/291
2N2907A SEMICOA
2N2907A
equivalent 2N2907A
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st 2n2907 to-18
Abstract: IC 7430 2N2907 philips transistor 2N2222 PHILIPS 2N2222A 0612 2N2907A 2n2907 metal can 2N2222 2N2222A 2N2907
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D125 2N2907; 2N2907A PNP switching transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 30 Philips Semiconductors Product specification PNP switching transistors
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M3D125
2N2907;
2N2907A
2N2222
2N2222A.
MAM263
SCA54
117047/00/02/pp8
st 2n2907 to-18
IC 7430
2N2907 philips
transistor 2N2222 PHILIPS
2N2222A 0612
2N2907A
2n2907 metal can
2N2222A
2N2907
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2N2906A
Abstract: 2N2907A
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N2906A, 07A
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ISO/TS16949
2N2906A
2N2907A
2N2906A,
25deg
C-120
2N2906A
2N2907A
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2N2907A
Abstract: CDIL 2n2907a 2N2906A
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR SWITCHING TRANSISTORS 2N2906A 2N2907A TO-18 Switching And Linear Application DC to VHF Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION
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2N2906A
2N2907A
2N2906A,
25deg
C-120
2N2907A
CDIL 2n2907a
2N2906A
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2N2907A
Abstract: 2N2907A surface mount 2n2907aub 2N2906A transistor ub t JANS2N2907A 2N2907A PNP Transistor equivalent 2N2907A 2N2906AL 2N2907A JANTX
Text: TECHNICAL DATA PNP SMALL SIGNAL SILICON TRANSISTOR Qualified per MIL-PRF-19500/291 Devices 2N2906A 2N2906AL 2N2906AUA 2N2906AUB Qualified Level JAN JANTX JANTXV JANS 2N2907A 2N2907AL 2N2907AUA 2N2907AUB MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage
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MIL-PRF-19500/291
2N2906A
2N2906AL
2N2906AUA
2N2906AUB
2N2907A
2N2907AL
2N2907AUA
2N2907AUB
2N2906A
2N2907A
2N2907A surface mount
2n2907aub
transistor ub t
JANS2N2907A
2N2907A PNP Transistor
equivalent 2N2907A
2N2906AL
2N2907A JANTX
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2N2907A JANTX
Abstract: No abstract text available
Text: 2N2907A Product Preview Switching Transistor PNP Silicon Epitaxial http://onsemi.com Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military COLLECTOR 3 Temperature Range Screening
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2N2907A
MIL-PRF-19500/291
2N2907A/D
2N2907A JANTX
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Untitled
Abstract: No abstract text available
Text: 2N2907A Switching Transistor PNP Silicon Epitaxial Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening
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2N2907A
MIL-PRF-19500/291
2N2907A/D
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2907 TRANSISTOR PNP
Abstract: 2907a TRANSISTOR PNP 2907a
Text: 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
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2N2907
2N2907A
500mA,
150mA,
100MHz
2907 TRANSISTOR PNP
2907a TRANSISTOR PNP
2907a
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2n2222a transistor
Abstract: transistor 2n2222a to-92
Text: 2N2222A NPN Silicon Elektronische Bauelemente General Purpose Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free Features Epitaxial Planar Die Construction TO–92 Complementary PNP Type Available 2N2907A Ideal for Medium Power Amplification and Switching
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2N2222A
2N2907A
01-Jun-2002
270TYP
050TYP
2n2222a transistor
transistor 2n2222a to-92
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2N2907A SEMICOA
Abstract: 2N2907A
Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)
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2N2907A
MIL-PRF-19500
2N2907AJ)
2N2907AJX)
2N2907AJV)
2N2907AJS)
MIL-STD-750
MIL-PRF-19500/291
2N2907A SEMICOA
2N2907A
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12N2907A
Abstract: 2N2907AJ 2N2907A 2N2907AJS 2N2907AJV 2N2907AJX
Text: 2N2907A Silicon PNP Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • PNP silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2907AJ • JANTX level (2N2907AJX)
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2N2907A
MIL-PRF-19500
2N2907AJ)
2N2907AJX)
2N2907AJV)
2N2907AJS)
MIL-STD-750
MIL-PRF-19500/291
12N2907A
2N2907AJ
2N2907A
2N2907AJS
2N2907AJV
2N2907AJX
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Transistor 2N2907A
Abstract: 2N2907A LE17 2n2907a icbo
Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N2907A • Low Power • Hermetic TO-18 Metal package. • Ideally suited for High Speed Switching and General Purpose Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated
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2N2907A
-600mA
400mW
O-206AA)
Transistor 2N2907A
2N2907A
LE17
2n2907a icbo
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2907 TRANSISTOR PNP
Abstract: 2907A 2907a TRANSISTOR PNP transistor 2222a st 2222A npn 2907A 2N2907 PNP Transistor to 92 transistor 2907 2907 ST 2222
Text: ST 2N2907 / 2N2907A PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to its DC current gain. As complementary type the NPN transistor ST 2222 and ST 2222A are recommended.
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2N2907
2N2907A
150mA,
500mA,
100MHz
2907 TRANSISTOR PNP
2907A
2907a TRANSISTOR PNP
transistor 2222a
st 2222A
npn 2907A
2N2907 PNP Transistor to 92
transistor 2907
2907
ST 2222
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JAN2N2907A
Abstract: No abstract text available
Text: 2N2907A Small Signal Switching Transistor PNP Silicon http://onsemi.com Features • MIL−PRF−19500/291 Qualified • Available as JAN, JANTX, and JANTXV COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −60 Vdc Collector −Base Voltage
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2N2907A
MIL-PRF-19500/291
206AA
2N2907A/D
JAN2N2907A
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2N2907
Abstract: PN2907 PN2907A J 2N2907 2N2222 2N2222A 2N2907A PN2222 PN2222A PNP pN2907
Text: CASE TO-18 CASE T0-92A CBE EBC 2N2907 2N2907A PN2907 PN2907A THE 2N2907, 2N2907A, PN2907, PN2907A ARE PNP SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AMPLIFIERS AND MEDIUM SPEED SWITCHING APPLICATIONS. THEY ARE COMPLEMENTARY TO THE NPN TYPE 2N2222,
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2N2907A
PN2907A
2N2907,
2N2907A,
PN2907,
2N2222,
2N2222A,
PN2222,
PN2222A
2N2907
PN2907
J 2N2907
2N2222
2N2222A
PN2222
PNP pN2907
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Untitled
Abstract: No abstract text available
Text: m 2N2907A \ \ SILICON PNP TRANSISTOR DESCRIPTION: The 2N2907A is Designed for General Purpose Amplifier and Switching Applications. MAXIMUM RATING: 600 mA lc O m < -60 V P diss 1.8 W @ Tc = 25 °C Tj -65 °C to +200 °C stg -65 °C to +200 °C T 97 °C/W 0JC
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2N2907A
2N2907A
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Untitled
Abstract: No abstract text available
Text: ¡J8BBBBB88& p |M iwiHBBffi smssssPe .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. loniftBHhr. r o f l I I ^88888% # 1 Da ta S he e t No. 2 N 2 9 0 7 A $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N2907A Type 2N2907A G eom etry 0600 P olarity PNP Q ual Level: J A N -J A N S
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J8BBBBB88&
2N2907A
F-19500/291
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Untitled
Abstract: No abstract text available
Text: 3Q E D 7 T 5 T 2 3 7 0 0 3 1 1 4 5 7 S C S -T H O M S O N *>7# [*^ 6&I(OT(q * S 1 • ~ T ' 2 T ? - / S 2N2904A-2N2905A 2N2906A-2N2907A T I T S-THOMSON GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTIO N The 2N2904A, 2N29Q5A, 2N2906A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec
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2N2904A-2N2905A
2N2906A-2N2907A
2N2904A,
2N29Q5A,
2N2906A
2N2907A
2N2904A
2N2905A)
2N2907A)
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Untitled
Abstract: No abstract text available
Text: r Z ^ 7 7 S G # S - T H O M S O N 2 N 2 9 0 5 A [ïfflO e œ ilL H e r a « ® 2 N 2 9 0 7 A GENERAL PURPOSE AMPLIFIERS AND SWITCHES DESCRIPTION The 2N2905A and 2N2907A are silicon planar epitaxial PNP transistors in Jedec TO-39 for 2N2905A and in Jedec TO-18 (for 2N2907A)
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2N2905A
2N2907A
2N2905A)
2N2907A)
2N2906A
2N2905A/2N2907A
P008B
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equivalent 2N2907A
Abstract: 2N2907A surface mount 2N2907A 2N5796 HCT740 HCT740TX
Text: OPTEK Product Bulletin HCT740 May 1993 Surface Mount Dual PNP Transistor Type HCT740 Features • Surface mountable on ceramic or printed circuit board • Miniature package to minimize circuit board area required • Electrical performance similar to 2N2907A
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HCT740
HCT740
2N2907A
MIL-S-19500
2N2907A
MIL-S-19500/291
2N2907A.
100MHz
equivalent 2N2907A
2N2907A surface mount
2N5796
HCT740TX
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JAN2N2907
Abstract: transistor 2n2222a pnp JAN2N2222A
Text: O PTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • Ceramic surface mount package • Miniature package to minimize circuit board area • Electrical performance similar to 2N2222A and 2N2907A
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HCT700
HCT700
2N2222A
2N2907A
MIL-S-19500
JANTX2N4854U)
500VDC
000233S
JAN2N2907
transistor 2n2222a pnp
JAN2N2222A
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JAN2N2222A
Abstract: No abstract text available
Text: OPTEK Product Bulletin HCT700 May 1993 Surface Mount NPN/PNP Complementary Transistors Type HCT700 Features • Ceramic surface mount package • Miniature package to minimize circuit board area • Electrical performance similar to 2N2222A and 2N2907A • Hermetically sealed
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HCT700
HCT700
2N2222A
2N2907A
MIL-S-19500
JANTX2N4854U)
500VDC
JAN2N2222A
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Untitled
Abstract: No abstract text available
Text: | 2N2222A SEM ICONDUCTOR FORW ARD INTERNATIONAL ELECTRONICS LTD. TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to 2N2907A * Collector-Emitter Voltage Vceq^O V * Collector D isspatbn Pc<irax: =625 mW * High Collector Current Ic max)=600mA
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2N2222A
2N2907A
600mA
300uS,
150mA
500mA
150mA
500mA
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2N2907
Abstract: 2N2222
Text: Philips Semiconductors Product specification PNP switching transistors 2N2907; 2N2907A FEATURES PINNING • High current max. 600 mA PIN • Low voltage (max. 60 V). DESCRIPTION 1 APPLICATIONS emitter 2 base 3 collector, connected to case • Switching and linear amplification.
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2N2907;
2N2907A
2N2222
2N2222A.
2N2907
2N2907A
MGD624
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