pnp for 2n3019
Abstract: 2N3700 DIE 2N3700UB 2N3057 2N3019 2N3700 DIE GEOMETRY 2N3019UB 2N3019 DIE 2C3019 2N3019S
Text: Data Sheet No. 2C3019 Generic Packaged Parts: Chip Type 2C3019 Geometry 4500 Polarity PNP 2N3019, 2N3057 Chip type 2C3019 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: Product Summary: APPLICATIONS: Designed for general
|
Original
|
PDF
|
2C3019
2N3019,
2N3057
2C3019
2N3019S,
2N3019UB,
2N3057,
2N3057A,
pnp for 2n3019
2N3700 DIE
2N3700UB
2N3057
2N3019
2N3700 DIE GEOMETRY
2N3019UB
2N3019 DIE
2N3019S
|
2N3019
Abstract: 2N3019J 2N3019JS 2N3019JV 2N3019JX 2N3019 DIE
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
|
Original
|
PDF
|
2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
MIL-STD-750
MIL-PRF-19500/391
2N3019
2N3019J
2N3019JS
2N3019JV
2N3019JX
2N3019 DIE
|
2n3019
Abstract: No abstract text available
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
|
Original
|
PDF
|
2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
2N3019JSR)
MIL-STD-750
MIL-PRF-19500/391
2n3019
|
2N3019 DIE
Abstract: No abstract text available
Text: 2N3019 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019J • JANTX level (2N3019JX)
|
Original
|
PDF
|
2N3019
MIL-PRF-19500
2N3019J)
2N3019JX)
2N3019JV)
2N3019JS)
MIL-STD-750
MIL-PRF-19500/391
2N3019 DIE
|
2N3700 DIE
Abstract: PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET
|
Original
|
PDF
|
MIL-PRF-19500/391M
MIL-PRF-19500/391L
2N3019,
2N3019S,
2N3057A,
2N3700,
2N3700UB,
2N3700 DIE
PCB land 2n3700ub
Dose 2N3700
2N3019 DIE
2N3700 JAN
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
|
2N3700 DIE
Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER
|
Original
|
PDF
|
MIL-PRF-19500/391G
MIL-PRF-19500/391F
2N3019,
2N3019S,
2N3057A,
2N3700,
2N3700UB
JANHC2N3700
JANKC2N3700
MIL-PRF-19500.
2N3700 DIE
JANKC2N3700
JANHCA2N3700
2N3019 DIE
2N3019
2N3019S
2N3057A
2N3700
2N3700UB
|
2N3019
Abstract: 2n3019 equivalent CMPT3019 CP305 CXT3019 CZT3019
Text: PROCESS CP305 Central Small Signal Transistor TM Semiconductor Corp. NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS
|
Original
|
PDF
|
CP305
2N3019
CMPT3019
CXT3019
CZT3019
2N3019
2n3019 equivalent
CMPT3019
CP305
CXT3019
CZT3019
|
2N3019 DIE
Abstract: 2N3019 CMPT3019 CP305 CXT3019 CZT3019
Text: PROCESS CP305 Small Signal Transistor NPN - High Current Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 31 x 31 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.9 x 11.8 MILS Emitter Bonding Pad Area 6.5 x 13.8 MILS Top Side Metalization
|
Original
|
PDF
|
CP305
2N3019
CMPT3019
CXT3019
CZT3019
22-March
2N3019 DIE
2N3019
CMPT3019
CP305
CXT3019
CZT3019
|
MIL-S-19500
Abstract: 2902n TRANSISTOR 2n697 2N3700 DIE MIL-S-19500 FOR POWER LINE TRANSISTOR 2N497 2N497 JAN 2n2222 jan 2N657 2N910 JAN
Text: Winter 1997-1998 Microsemi's Watertown division received QPL Status on the following transistor part types in August 1997. PART TYPE 2N497 & S 2N498 & S 2N656 & S 2N657 & S 2N696 & S 2N697 & S 2N1131 & L 2N1132 & L 2N718A 2N1613 & L 2N720A 2N1893 & S 2N1711 & S
|
Original
|
PDF
|
2N497
2N498
2N656
2N657
2N696
2N697
2N1131
2N1132
2N718A
2N1613
MIL-S-19500
2902n
TRANSISTOR 2n697
2N3700 DIE
MIL-S-19500 FOR POWER LINE TRANSISTOR
2N497
2N497 JAN
2n2222 jan
2N657
2N910 JAN
|
662 marking
Abstract: 2N3019 LDT3019 LDT3019T 2N3019 DIE 015X transistor 2n3019 transistor
Text: PRODUCT DATA Micro International, Inc PART NUMBER LDT3019 and LDT3019T Micro-LID NPN Transistor Micro International, Inc. 179-204 Belle Forrest Circle Nashville, TN 37221 Tel: 615-662-1200 Fax 615-662-1226 www.microlid.com sales@microlid.com Micro-LID Transistors
|
Original
|
PDF
|
LDT3019
LDT3019T
LDT3019
LDT3019T
2N3019
662 marking
2N3019 DIE
015X transistor
2n3019 transistor
|
MOTOROLA 2N5179
Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R
|
Original
|
PDF
|
A12FR10
CR20-010R
A12FR100
CR20-100R
A12FR120
CR20-120R
A12FR20
CR20-020R
A12FR40
CR20-040R
MOTOROLA 2N5179
motorola 2N2219
motorola 2N2222A
motorola mpq3904
MOTOROLA 2N2905A
MJ3001 equivalent
motorola 2N4427
motorola 2N2219A
2N3819 MOTOROLA
motorola 2N3866
|
Device Test
Abstract: 1N4465 MD28F01020 MD27C64-25 Defense/RAD1419A RH1056A LM119
Text: The most important thing we build is trust ADVANCED ELECTRONIC SOLUTIONS AVIATION SERVICES COMMUNICATIONS AND CONNECTIVITY MISSION SYSTEMS Overview Cobham RAD Solutions 1/1/15 Commercial in Confidence Presenter: Malcolm Thomson Overview • Cobham At A Glance
|
Original
|
PDF
|
|
2N3810 LCC
Abstract: 2N2222A LCC1 ESCC 5202-001 MCA3201/2B ESCC 5204/002 bul54ah mp2835 ESCC 5201-002 silicon carbide JFET 2n918 die
Text: Space Products Semelab products and processes for space applications SEMELAB | experience and innovation 2 Contents 1. Introduction . 4 2. Programmes Supported . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5
|
Original
|
PDF
|
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
2N3810 LCC
2N2222A LCC1
ESCC 5202-001
MCA3201/2B
ESCC 5204/002
bul54ah
mp2835
ESCC 5201-002
silicon carbide JFET
2n918 die
|
MCA0616/1
Abstract: T-120-01B Skynet Electronic
Text: Space Products Semelab products and processes for space applications Contents 1. Introduction 4 2. Programmes Supported 5 3. Innovations 6 3.1 Improving the Space Weather Forecast with the LCC1- 4 6 3.2 SoLaRfets – Radiation Tolerant MosFETS 7 3.3 Si3N4 via technology
|
Original
|
PDF
|
MIL-PRF-19500
QR216,
QR217
FM36235
M/0103/CECC/UK
1360/M
VQC-03-003050
VQC-03-003049
U3158
2M8S02
MCA0616/1
T-120-01B
Skynet Electronic
|
|
|
BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10
|
Original
|
PDF
|
MMBFJ177LT1
236AB)
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
BC237
Abstract: MPSA06 346
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste
|
Original
|
PDF
|
MMBD1000LT1
MMBD2000T1
MMBD3000T1
MMSD1000T1
MMBD1000LT1
OT-23
O-236AB)
V218A
MSC1621T1
MSC2404
BC237
MPSA06 346
|
BC237
Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
PDF
|
MGSF3455XT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
MARKING CODE diode sod123 W1
K 2056 transistor
|
2N16
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.
|
Original
|
PDF
|
MGSF1P02ELT1
L218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
2N16
BC237
BCY72
|
2N2195
Abstract: 2N1990 2N1893 motorola 2N3700 DIE motorola 2N2270 2N736 2n2102 motorola 2N2297 motorola 2N3019 2N699
Text: 34 MOTOROLA SC -CDI0DES/0PT03- 6367255 MOTOROLA SC DE |t,3b72SS 0037=173 S | D IO D E S /O P T O 34C * SILICO N SM ALL-SIG NAL T R A N SISTO R DICE (continued) 37973 r-z-7-^ 2C21 02 DIE NO. — NPN LINE SOURCE — DSL7 D ¿St This die provides performance similar to that of the following device types:
|
OCR Scan
|
PDF
|
-CDI0DES/0PT03-
3b72SS
2N656
2N699
2N718
2N720
2N735
2N736
2N739
2N740
2N2195
2N1990
2N1893 motorola
2N3700 DIE
motorola 2N2270
2n2102 motorola
2N2297
motorola 2N3019
|
Untitled
Abstract: No abstract text available
Text: D a ta S h e e t No. 2 C 3 0 1 9 SEMICONDUCTORS G e n e ric P a c k a g e d P a rts : Chip Type 2C3019 Geometry 4500 Polarity PNP 2 N 3 0 1 9, 2 N 3 0 5 7 Chip type 2C3019 by Semicoa Semi conductors provides performance similar to these devices. Product Summary:
|
OCR Scan
|
PDF
|
2C3019
2C3019
2N3019,
2N3019S,
2N3019UB,
2N3057,
2N3057A,
2N3700,
2N3700UB,
SD3019F,
|
Untitled
Abstract: No abstract text available
Text: ' T •typeNo. Package vCEO ■c cont hF E @ V c e /Ic *T Pd HI-REL HI-REL HI-REL SCREEN SCREEN NPNP PNP NPN NPN NPN T039 T018 T018 T039 T039 12 20 80 80 0.2 0.2 1 1 30-120 30-120 80min 30min 0.5/30m 0.4/30m 5/lra 5/lm 400M 350M 100M 80M 0.36 0.36 0.8 0.8
|
OCR Scan
|
PDF
|
2N3008
2N3012
2N3014
2N3019
2N3020
80min
30min
5/30m
4/30m
2N3036
|
Untitled
Abstract: No abstract text available
Text: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822
|
OCR Scan
|
PDF
|
DDG0434
2N2604
2N2605
2N2639
2N2640
2N2641
2N2642
2N2643
2N2644
2N2815
|
MMBF112L
Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty
|
OCR Scan
|
PDF
|
06050L
MMBD914L
BAS16L
BAL99L
MBAV70L
MBAV99L
MBAV74
BD2835XL
MBD2836XL
MMBD2837XL
MMBF112L
MFE521
MMBF112
2N3797 equivalent
MFE131 equivalent
MPS5210
BC557 SOT23
8C448
BC459C
mfe211
|
BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
|
OCR Scan
|
PDF
|
OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
|
