2N3019J |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
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PDF
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2N3019JAN |
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New England Semiconductor
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LOW POWER NPN SILICON TRANSISTOR |
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PDF
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2N3019JAN |
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New England Semiconductor
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BJT: NPN: Small Signal Transistor: IC 1A |
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PDF
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2N3019JANS |
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New England Semiconductor
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LOW POWER NPN SILICON TRANSISTOR |
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Original |
PDF
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2N3019JANS |
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New England Semiconductor
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BJT: NPN: Small Signal Transistor: IC 1A |
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Original |
PDF
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2N3019JANTX |
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New England Semiconductor
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LOW POWER NPN SILICON TRANSISTOR |
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Original |
PDF
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2N3019JANTXV |
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New England Semiconductor
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LOW POWER NPN SILICON TRANSISTOR |
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Original |
PDF
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2N3019JS |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
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Original |
PDF
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2N3019JTX |
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New England Semiconductor
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BJT: NPN: Small Signal Transistor: IC 1A |
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Original |
PDF
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2N3019JV |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
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Original |
PDF
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2N3019JX |
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Semico
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Package = TO-5 Level = Jans Vceo (V) = 80 Vcbo (V) = 140 Vebo (V) = 7.0 Ic (A) = 1.00 Power (W) ta = 0.8 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
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Original |
PDF
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