Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3019S JAN Search Results

    SF Impression Pixel

    2N3019S JAN Price and Stock

    Semicoa Semiconductors 2N3019SJANTX/GROUPADATA

    Transistor GP BJT NPN 80V 1A 3-Pin TO-39 - Bulk (Alt: JANTX2N3019S/GROUPADATA)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N3019SJANTX/GROUPADATA Bulk 22 Weeks 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    Microchip Technology Inc JAN2N3019S

    Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JAN2N3019S 116
    • 1 $16.77
    • 10 $16.77
    • 100 $15.89
    • 1000 $15.32
    • 10000 $15.32
    Buy Now

    Microchip Technology Inc Jantx2N3019S

    Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics Jantx2N3019S
    • 1 $8.68
    • 10 $8.68
    • 100 $8.06
    • 1000 $8.06
    • 10000 $8.06
    Get Quote

    Microchip Technology Inc JANTXV2N3019S

    Bipolar Transistors - BJT 80V 1A 800mW Small-Signal BJT THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANTXV2N3019S
    • 1 $19.94
    • 10 $19.94
    • 100 $18.51
    • 1000 $18.51
    • 10000 $18.51
    Get Quote

    Microchip Technology Inc JANSR2N3019S

    Bipolar Transistors - BJT 80V 1A 800mW RH Small-Signal BJT THT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANSR2N3019S
    • 1 $129.67
    • 10 $129.67
    • 100 $129.67
    • 1000 $129.67
    • 10000 $129.67
    Get Quote

    2N3019S JAN Datasheets (7)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3019SJAN Motorola Bipolar Transistor, NPN Silicon Small Signal Transistor Original PDF
    2N3019SJAN New England Semiconductor BJT: NPN: Small Signal Transistor: IC 1A Original PDF
    2N3019SJAN New England Semiconductor LOW POWER NPN SILICON TRANSISTOR Original PDF
    2N3019SJANS Motorola Bipolar Transistor, NPN Silicon Small Signal Transistor Original PDF
    2N3019SJANS New England Semiconductor LOW POWER NPN SILICON TRANSISTOR Original PDF
    2N3019SJANTX New England Semiconductor LOW POWER NPN SILICON TRANSISTOR Original PDF
    2N3019SJANTXV New England Semiconductor LOW POWER NPN SILICON TRANSISTOR Original PDF

    2N3019S JAN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3700

    Abstract: JTX 2N3019S 2N3700UB 2N3019 2N3700 JAN 2n3057a
    Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV 2N3019S JAN, JTX, JTXV 2N3057A JAN, JTX, JTXV 2N3700 JAN, JTX, JTXV 2N3700UB JAN, JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/391 2N3019, 2N3019S TO-39 TO-205AD LOW-POWER NPN SILICON TRANSISTORS MAXIMUM RATINGS


    Original
    2N3019 2N3019S 2N3057A 2N3700 2N3700UB MIL-PRF-19500/391 2N3019; JTX 2N3019S 2N3700 JAN PDF

    2N3019S

    Abstract: 2N3019
    Text: Data Sheet No. 2N3019S Generic Part Number: 2N3019 Type 2N3019S Geometry 4500 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/391 Features: • • • • • General-purpose transistor for switching and amplifier applicatons. Housed in a TO-39 case.


    Original
    2N3019S 2N3019 MIL-PRF-19500/391 MIL-PRF-19500/391 2N3019S 2N3019 PDF

    6822

    Abstract: 2N3019S "nickel cap"
    Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


    Original
    2N3019S MIL-PRF-19500/391 2N3019S 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4, 6822 "nickel cap" PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3019S Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019S NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


    Original
    2N3019S MIL-PRF-19500/391 2N3019S O-205AD) 2N3019 MIL-PRF-19500/391. T4-LDS-0185-4, PDF

    2N3019

    Abstract: JAN2N3700 2N3019S 2N3019S JAN
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original
    2N3019, 2N3019S, 2N3700 MIL-PRF-19500/391 2N3019S 2N3019 JAN2N3700 2N3019S JAN PDF

    2N3019

    Abstract: No abstract text available
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original
    2N3019, 2N3019S, 2N3700 2N3019S 2N3019/D 2N3019 PDF

    JANTX2N3019S

    Abstract: No abstract text available
    Text: 2N3019S Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening 2 BASE


    Original
    2N3019S 2N3019S/D JANTX2N3019S PDF

    JANSL 2N3019S

    Abstract: JANS2N3700UB 2n3019 equivalent
    Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for


    Original
    2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, JANSL 2N3019S JANS2N3700UB 2n3019 equivalent PDF

    2n3019 equivalent

    Abstract: 2N3019
    Text: JANS_2N3019 and JANS_2N3019S Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This RHA level 2N3019 and 2N3019S NPN leaded metal device is RAD hard qualified for


    Original
    2N3019 2N3019S MIL-PRF-19500/391 2N3019S 2N3019. O-205AD) T4-LDS-0098, 2n3019 equivalent PDF

    2N3019 and applications

    Abstract: 2N3019S 2n3019 JANTX2N3700 jantx2n3019
    Text: 2N3019, 2N3019S, 2N3700 Low Power Transistors NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS TA = 25°C unless otherwise noted Characteristic Symbol Value Unit


    Original
    2N3019, 2N3019S, 2N3700 MIL-PRF-19500/391 2N3019S 2N3019 and applications 2n3019 JANTX2N3700 jantx2n3019 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3019S Low Power Transistor NPN Silicon Features • MIL−PRF−19500/391 Qualified • Available as JAN, JANTX, and JANTXV • Hermetically Sealed Commercial Product with Option for Military http://onsemi.com COLLECTOR 3 Temperature Range Screening 2 BASE


    Original
    2N3019S MIL-PRF-19500/391 205AB 2N3019S/D PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3019S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019SJ • JANTX level (2N3019SJX)


    Original
    2N3019S MIL-PRF-19500 2N3019SJ) 2N3019SJX) 2N3019SJV) 2N3019SJS) MIL-STD-750 MIL-PRF-19500/391 PDF

    2N3019S

    Abstract: 2N3019SJ 2N3019SJS 2N3019SJV 2N3019SJX
    Text: 2N3019S Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N3019SJ • JANTX level (2N3019SJX)


    Original
    2N3019S MIL-PRF-19500 2N3019SJ) 2N3019SJX) 2N3019SJV) 2N3019SJS) MIL-STD-750 MIL-PRF-19500/391 2N3019S 2N3019SJ 2N3019SJS 2N3019SJV 2N3019SJX PDF

    2n3019

    Abstract: 2N3700 2N3700UB 2n3019 equivalent 2N3019S JTX 2N3019S 2N3057A 600C 2N3019S JAN
    Text: TECHNICAL DATA 2N3019 JAN, JTX, JTXV, JANS 2N3019S JAN, JTX, JTXV, JANS 2N3057A JAN, JTX, JTXV, JANS 2N3700 JAN, JTX, JTXV, JANS 2N3700UB JAN, JTX, JTXV, JANS Processed per MIL-PRF-19500/391 Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage


    Original
    2N3019 2N3019S 2N3057A 2N3700 2N3700UB MIL-PRF-19500/391 2N3019; 2N3019S 2N3057A 2N3700 2n3019 equivalent JTX 2N3019S 600C 2N3019S JAN PDF

    2N3019

    Abstract: No abstract text available
    Text: SEMICONDUCTOR! TECHNICAL DATA 2N3019S 2N3057A 2N3700. c r v s t a io n c s 2805 Vetwaos Highway Suite NPN Silicon Small-Signal Transistors 14 Ronkor;koma, N Y. 1177y . .designed for general-purpose switching and amplifier applications MAXIMUM RATINGS Rating


    OCR Scan
    2N3019S 2N3057A 2N3700. 1177y 2N3700 2N3019S, 2N3057A, 2N3700 2N3019 PDF

    motorola g18

    Abstract: 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S
    Text: MOTOROU o Orderthls document by 2N3019SJANID SEMICONDUCTOR TECHNICAL DATA ttl ,$$>. *t~i”*J,:~$< >,. j/ ,>, ,.!$: .> ~>‘ 1111~ ~~~ ‘‘}1lb “,., 2N3019SJAN, dTX, dTXV, dANS 2N3700dAN, JTX, JTXV, JANS I\o Processed per MlL4-19500/391 NPN Silicon Small+ignal


    Original
    2N3019SJANID 2N3019SJAN, 2N3700dAN, MlL4-19500/391 2N3019S T0205AD 1PHX24101 motorola g18 2N301 2N3700 Y14W 2N3019S 2N3019SJAN 2N3019S MOTOROLA MERET 2N3700 MOTOROLA motorola 2N3019S PDF

    2n3019 equivalent

    Abstract: 2N3019S
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR


    Original
    MIL-PRF-19500/391 2N3019 2N3019S 2N3057A 2N3700 2N3700UB 2N3019) 2N3700UB) T4-LDS-0185 2n3019 equivalent 2N3019S PDF

    2N3700 DIE

    Abstract: PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 11 November 2010. MIL-PRF-19500/391M 20 September 2010 SUPERSEDING MIL-PRF-19500/391L 15 January 2008 PERFORMANCE SPECIFICATION SHEET


    Original
    MIL-PRF-19500/391M MIL-PRF-19500/391L 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB, 2N3700 DIE PCB land 2n3700ub Dose 2N3700 2N3019 DIE 2N3700 JAN 2N3019 2N3019S 2N3057A 2N3700 2N3700UB PDF

    2N3700UB

    Abstract: 2N3700 2n3019 equivalent 000-inch 2N3700 JAN 2N3019 2N3019S 2N3057A to-206aa
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR


    Original
    MIL-PRF-19500/391 2N3019 2N3019S 2N3057A 2N3700 2N3700UB 2N3700UB) T4-LDS-0185 2N3700UB 2N3700 2n3019 equivalent 000-inch 2N3700 JAN 2N3019 2N3019S 2N3057A to-206aa PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 LOW POWER NPN SILICON TRANSISTOR


    Original
    MIL-PRF-19500/391 2N3019 2N3019S 2N3057A 2N3700 2N3700S 2N3700UB 2N3019; 2N3019S 2N3057A PDF

    2N3700 DIE

    Abstract: JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB JANHC2N3700
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 October 2002. INCH-POUND MIL-PRF-19500/391G 15 July 2002 SUPERSEDING MIL-PRF-19500/391F 26 March 2001 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, LOW-POWER


    Original
    MIL-PRF-19500/391G MIL-PRF-19500/391F 2N3019, 2N3019S, 2N3057A, 2N3700, 2N3700UB JANHC2N3700 JANKC2N3700 MIL-PRF-19500. 2N3700 DIE JANKC2N3700 JANHCA2N3700 2N3019 DIE 2N3019 2N3019S 2N3057A 2N3700 2N3700UB PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3700UB Available on commercial versions Low Power NPN Silicon Transistor Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3700UB NPN ceramic surface mount device is military qualified for high-reliability


    Original
    2N3700UB MIL-PRF-19500/391 2N3700UB 2N3700 MIL-PRF-19500/391. 2N3700UB. T4-LDS-0185-3, PDF

    2n3019 equivalent

    Abstract: 2n3019 transistor test 2N3700 "nickel cap"
    Text: 2N3019 Compliant LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 Qualified Levels: JAN, JANTX, JANTXV, and JANS DESCRIPTION This 2N3019 NPN leaded silicon transistor device is military qualified for high-reliability applications. Microsemi also offers numerous other transistor products to meet higher and


    Original
    2N3019 MIL-PRF-19500/391 2N3019 MIL-PRF-19500/391. T4-LDS-0185, 2n3019 equivalent 2n3019 transistor test 2N3700 "nickel cap" PDF

    JANS2N3700UB

    Abstract: microsemi ub package tape reel 2N3700
    Text: JANS_2N3700UB Qualified Levels: JANSM, JANSD, JANSP, JANSL, and JANSR RADIATION HARDENED LOW POWER NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/391 DESCRIPTION This NPN ceramic surface mount device is RAD hard qualified for high-reliability applications.


    Original
    2N3700UB MIL-PRF-19500/391 2N3700. T4-LDS-0263-1, JANS2N3700UB microsemi ub package tape reel 2N3700 PDF