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    2N3117 Price and Stock

    Central Semiconductor Corp 2N3117-PBFREE

    TRANS NPN 60V 0.05A TO-18
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    DigiKey 2N3117-PBFREE Bulk 1
    • 1 $7.72
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    Central Semiconductor Corp 2N3117-TIN-LEAD

    60V 50MA 360MW TH TRANSISTOR-SMA
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    DigiKey 2N3117-TIN-LEAD Box 2,000
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    Central Semiconductor Corp 2N3117

    Bipolar Transistor NPN Amplifier/Switch 50mA 60V 3-Pin TO-18 Through Hole Box - Boxed Product (Development Kits) (Alt: 2N3117)
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    Avnet Americas 2N3117 Box 6 Weeks 2,000
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    Quest Components 2N3117 12
    • 1 $14.4
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    Central Semiconductor Corp 2N3117 TIN/LEAD

    Transistor GP BJT NPN 60V 50mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N3117 TIN/LEAD)
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    Avnet Americas 2N3117 TIN/LEAD Box 2,000
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    Central Semiconductor Corp 2N3117 PBFREE

    Transistor GP BJT NPN 60V 50mA 3-Pin TO-18 Box - Boxed Product (Development Kits) (Alt: 2N3117 PBFREE)
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    Avnet Americas 2N3117 PBFREE Box 2,000
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    Mouser Electronics 2N3117 PBFREE 73
    • 1 $7.88
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    Verical 2N3117 PBFREE 555 25
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    Arrow Electronics 2N3117 PBFREE 555 11 Weeks 25
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    2N3117 Datasheets (34)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3117 Central Semiconductor Leaded Small Signal Transistor General Purpose Original PDF
    2N3117 Central Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 60V 50MA TO-18 Original PDF
    2N3117 Central Semiconductor Metal Can Transistors Scan PDF
    2N3117 Central Semiconductor METAL CAN Transistors Scan PDF
    2N3117 Central Semiconductor NPN METAL CAN - SWITCHING AND GENERAL PURPOSE Scan PDF
    2N3117 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3117 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3117 Fairchild Semiconductor NPN low level low noise amplifier. Scan PDF
    2N3117 Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    2N3117 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3117 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3117 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3117 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N3117 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N3117 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3117 Unknown Vintage Transistor Datasheets Scan PDF
    2N3117 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N3117 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3117 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3117 Unknown Shortform Transistor PDF Datasheet Short Form PDF

    2N3117 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3117

    Abstract: No abstract text available
    Text: 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. PACKAGE STYLE TO-18 MAXIMUM RATINGS 5o mA Ie < o m eo V p d is s 3eo mW @ Ta = 25 °C Tj -es 0C to +2oo 0C Ts t g -e5 0C to +2oo 0C 0 je


    OCR Scan     		2N3117 2N3117 PDF

    2N859

    Abstract: 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385


    OCR Scan     		2n3117 to-18 2n4383 2n4384 2n4385 2n4386 CBR30 0000S23 2N859 2N270b 2N4135 2N915 2N2708 2N2865 2N4134 2N721 2N916 2N917 PDF

    2N1256 S P

    Abstract: No abstract text available
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 1 9 8 9 9 6 3 C E N T R A L SfcMlLUNÜUCTUK 6 1 C “0 0 2 1 9 . T~ 5 l ~ 0 / NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCB 2N3117 2N4383 2N4384 2N4385 2N4386 60 40 40 40 40 V V V hpE min


    OCR Scan     		2N3117 2N4383 2N4384 2N4385 2N4386 CBR10 CBR25Ser/es CBR12 CBR30 C1000SE3 2N1256 S P PDF

    S07T_2N3117

    Abstract: 2n3117
    Text: 2N3117 NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3117 type is an NPN silicon transistor designed for general purpose amplifier applications. MARKING: FULL PART NUMBER TO-18 CASE MAXIMUM RATINGS: TA=25°C


    Original     		2N3117 2N3117 150mA, 30MHz 10kHz S07T_2N3117 PDF

    2N3117

    Abstract: No abstract text available
    Text: TYPE 2N3117 N-P-N SILICON TRANSISTOR B U L L E T I N N O . D L -5 6 7 8 8 7 6 , J A N U A R Y 1 96 7 DESIGNED FOR USE IN LOW-LEVEL, LOW-NOISE AMPLIFIERS • Guaranteed Low-Noise Characteristics at 10 Hi, 100 Hz, 1 kHz and 10 kHz • High Guaranteed hF[ at


    OCR Scan     		2N3117 752SJ PDF

    2N217

    Abstract: 2N2708 2N4135 2N859 2N915 2N3117 2N4383 2N4384 2N4385 2N4386
    Text: NPN METAL CAN - LOW NOISE LEVEL AMPLIFIER Cont'd. TYPE NO. VCB 2N3117 2N4383 2N4384 2N4385 2N4386 • 60 40 40 40 40 V VCE V EB hpE at •c Vce mA V V mA MHz 1.0 10 10 10 10 60 VcE(s) at V V min max 60 30 30 30 30 6 ■ 5 5 250 100 100 40 500 500 500 500


    OCR Scan     		2N3117 2N4383 2N4384 2N4385 2N4386 2N915 2N916 CBR10 CBR25 CBR12 2N217 2N2708 2N4135 2N859 2N3117 PDF

    Untitled

    Abstract: No abstract text available
    Text: ASI 2N3117 SILICON NPN TRANSISTOR DESCRIPTION: The 2N3117 is Designed for General Purpose Low Level Amplifier Applications. MAXIMUM RATINGS lc 50 mA V ce 60 V P diss 360 mW @ Ta = 25 °C Tj -65 °C to +200 °C T stg -65 °C to +200 °C 0JC 55 °C/W CHARACTERISTICS t c = 25 °c


    OCR Scan     		2N3117 2N3117 PDF

    2N4134

    Abstract: 2N4135 2N915 2N1256 2N4384 2n726
    Text: CENTRAL SEMICONDUCTOR : ' tï F Ë 1 nfl*nt3 D O O O S n 7 f 61C “00219. T ~ 5 l -0 / 1989963 CENTRAL SfcMlLUNÜUCTUK NPN METAL CAN - LOW IMOISE LEVEL AM PLIFIER ContU VCE V EB hpE at •c VCE V V V min max mA V V mA MHz 2N3117 2N4383 2N4384 2N4385 2M4386


    OCR Scan     		2n3117 2n4383 2n4384 2n4385 2n4386 2n915 to-18 2n916 CBR12 CBR30 2N4134 2N4135 2N1256 2n726 PDF

    Untitled

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3117 NPN SILICON TRANSISTOR TO-18CASE MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage UNITS SYMBOL ^CBO ^ Collector-Emitter Voltage VCEO


    Original     		2N3117 O-18CASE PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3117 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)50m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10n @V(CBO) (V) (Test Condition)45 V(CE)sat Max. (V).35 @I(C) (A) (Test Condition)1.0m


    Original     		2N3117 Freq60M PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		PDF

    BCY59-9

    Abstract: bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 2N720 2N720A
    Text: TO-18 METAL-CAN PACKAGE TRANSISTORS NPN E le c tric a l C h a ra c te ris tic s M a x im u m R a tin g s Typ* N o. VCBO (V) Min V CEO V EBO *CBO (V) Min (V) Min (^A ) Ma ' V CB hFE 0.100 10.0 10.0 10.0 1.20 5.00 0.90 1.30 50 150 15 150.0 10.0 10.0 10.0


    OCR Scan     		2N720 2N720A 2N912 2N2S09 2N2368 2N2369 2N2369A 2N2615 2N2616 2N783 BCY59-9 bsx21 npn transistor 2N120 001-120 2N160A 2N915 8SX21 2N719 PDF

    603 transistor npn

    Abstract: 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) Device Allegro Type Type


    OCR Scan     		000b515 2N918 2N2222A 2N2369 2N2484 2N2907A 2N2945 2N3019 2N3117 2N3251A 603 transistor npn 2N3906 DS transistor BC 312 603 transistor npn dj bipolar BC transistor BC847C di PN 2n2222A 2n3904 2n3906 PDF

    SE4020

    Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
    Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max


    OCR Scan     		PN4249 2N3965 BFX37 2N3962 2N5961 SE4020 O-106 2N2484 EN2484 SE4020 fairchild to-106 se7055 BFY57 BC532 2N2484 PN4889 EN2484 PDF

    switch NPN

    Abstract: BSY18 2N2369 2n4390
    Text: Small Signal Transistors TO-18 Case TYPE NO. DESCRIPTION BVCBO BVCEO BVEBO ICBO @ V (V) (V) (mA) MIN MIN MIN VCB (V) MAX hFE @ IC (mA) MIN MAX @ VCE (V) VCE (SAT) @ IC Cob fT (V) (mA) (pF) (MHz) (dB) ton (ns) toff (ns) MAX MAX MAX MAX MAX MIN NF *ICES *ICEV


    Original     		2N703 2N706C 2N708 2N709A 2N717 2N718A 2N719A 2N720A 2N721 2N722A switch NPN BSY18 2N2369 2n4390 PDF

    BCY591

    Abstract: BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration
    Text: PIN CONFIGURATION 1. Emitter 2. B ase 3. Collector DIM MIN MAX A 5,24 5,84 B 4,52 4,97 C 4,31 5,33 D 0,40 0,53 E - F - 1,27 G - 2,97 0,76 H 0,91 1,17 J K 0,71 1,21 L 45D EG 12,7 - ALL DIMENSIONS ARE IN M.M. TO-18 Metal-Can Package Transistors NPN Maximum Ratings


    OCR Scan     		BCY59-10 BFY76 BSX21 BSX48 BSY79 CIL351 CIL352 BCY591 BC109C pin configuration 2N718 pin configuration 2N706 BC107C bcy59-7 BC107c pin 2n815 2N25 BC107 pin configuration PDF

    2n3547

    Abstract: 2N3549
    Text: Small Signal Transistors TO-18 Case Continued TYPE NO. 2N2896 2N2897 DESCRIPTION (V) (V) (V) (l*A) MIN MIN MIN MAX *ICES "IC E V e ic h FE BVCBO BVCEO BVEBO •CBO « VCBO (mA) (V) MIN VCE V C E (S i iT) IC Cob (V) (V) (mA) MAX MAX (pF) MAX n- NF ton


    OCR Scan     		2N2896 2N2897 2N2906A 2N2907A 2N2952 2N3009 2N3011 2N3012 2N3013 2N3014 2n3547 2N3549 PDF

    JAN2N760A

    Abstract: 2N3692 2n2510 2N3565
    Text: N PN Transistors low I vel amps TVpe Case No Styla VCEO "eso IV! IV! M,n MIn IV! [ M,n Vcso MIn MIX VCEI . t VSEI .t! IV! 80 IV! Ma. NF Cob IpF! IdS! MIX Ma. Ma. 06 1.1 10 50 1 1 Test CondItIon Process No. 2N760 TO•18 45 45 200 30 76 333 1 5 2N760A TO'18


    Original     		2N760 2N760A JAN2N760A 2N929 JAN2N929 157kHz 2N3692 2n2510 2N3565 PDF

    2n3298

    Abstract: 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 2N1613
    Text: jGmitronicr Sem itronics Corp. SEMICONDUCTORS metal can transistors cont’d silicon small signal transistors Maximum Ratings O m ite Type Package Po V cb VC E Ambient Volts Volts mW Electrical Characteristics @ 25 C V c e Sat @ Ic /ls V eb 1>FE Volts Min/Max


    OCR Scan     		2N1613 2N16I3A 2N1613B 2N17I1 2N17IIA 2N3725A 2N3947 2N40B0 2N4137 2N4207 2n3298 2N2360 2n2694 2N3208 2N321 2N321D IN219 2N2195B 2n2888 PDF

    N3020

    Abstract: 2N2951 2N3114 2N3301 ST 2N3053 2N2219 2N2219A 2N2220 2N2221 2N2221A
    Text: central se mi co nd u ct or 1989963 CENTRAL SEMICOND U C T O R " bï D F | n a n t . 3 oooosit, i " _ 61C 00 216 NPN M E TA L CAN - SW ITCHING A N D G ENER AL PURPOSE Cont'd. < o 00 — 21 VCE V eb h FE at •c V CE V V V min max mA V 2N2219 2N2219A 2N2220


    OCR Scan     		2N2219 2N2219A 2N2220 2N2221 2N2221A 2N2222 2N2222A 2N2236 CBR30 0000S23 N3020 2N2951 2N3114 2N3301 ST 2N3053 PDF

    THC3251A

    Abstract: pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE 2N2222A 2N2369
    Text: ALLEGRO MICROSYSTEMS INC bbE D • 0504330 000b515 4bS ■ ALGR BIPOLAR TRANSISTORS ELECTRICAL CHARACTERISTICS at T = + 25°C A ^CBO 'c Max. V BH CBO V (BR)CEO V(BR)EBO Max. <mA) (V) (V) (V) (nA) ^CEO @ V CB Max. @ v CE (V) (nA) (V) — — Device Allegro


    OCR Scan     		SG433a 2N918 THC918 2N2222A THC2222A 2N2369 THC2369 2N2484 THC2484 2N2907A THC3251A pnp for 2n3019 312 2N3904 2N4033 2N3906 DS 2N3117 2n5401 2n3904 bcy71 ALTERNATIVE PDF

    2N9308

    Abstract: 2N221BA 2N69S 2N3304 2M2193 2NI893 2N4080 2N236S 2N408 2N238
    Text: INTEX/ SEMITRôNICS CORP 27E D T-A 7 - 0 [ 4ñLTSMb 00DDS7Ì t J E m iE T D F l Sem itronics Corp. SEMICONDUCTORS metal can transistors silicon sm all signal transistors Msxinium Ratines Device 2N497 2N49B 2N65S 2H657 Type NPN NPN NPN NPN NPN- Package TO 5


    OCR Scan     		00DDS7Ã T-A7-01 2N497 12/3S 30/S9 2N3725A 2N3947 2N4080 2N4137 2N4207 2N9308 2N221BA 2N69S 2N3304 2M2193 2NI893 2N236S 2N408 2N238 PDF

    BCY79-9

    Abstract: bcy791 BcY591 BSX21 2N706 BC107C BC109C pin configuration 2N706A 2N718A 2N720
    Text: TO-18 h - B -h ! o PIN C O N F IG U R A T IO N 1. Em itter 2. B a s e 3. Co llector DIM MIN A 5 ,2 4 M AX 5 ,8 4 B 4 ,5 2 4 ,9 7 C 4,31 5 ,3 3 D 0 ,4 0 0 ,5 3 0 ,7 6 E - F - 1,27 G - 2 ,9 7 H 0,91 1,17 J 0,71 1,21 K 12,7 - L 45 D E G ALL DIMENSIONS ARE IN M.M.


    OCR Scan     		2N706 2N706A BCY79-9 BCY79-10 BFX37 CF103 23fl33cm 000135T BCY79-9 bcy791 BcY591 BSX21 BC107C BC109C pin configuration 2N718A 2N720 PDF

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


    OCR Scan     		OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C PDF