2N3501J |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
|
Original |
PDF
|
2N3501JAN |
|
Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
|
Original |
PDF
|
2N3501JAN |
|
New England Semiconductor
|
NPN SILICON TRANSISTOR |
|
Original |
PDF
|
2N3501JANS |
|
Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
|
Original |
PDF
|
2N3501JANTXV |
|
New England Semiconductor
|
NPN SILICON TRANSISTOR |
|
Original |
PDF
|
2N3501JS |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
|
Original |
PDF
|
2N3501JTX |
|
Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
|
Original |
PDF
|
2N3501JTXV |
|
Motorola
|
Bipolar Transistor, NPN Silicon Small Signal Transistor |
|
Original |
PDF
|
2N3501JV |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
|
Original |
PDF
|
2N3501JX |
|
Semico
|
Package = TO-39 Level = Jans Vceo (V) = 150 Vcbo (V) = 150 Vebo (V) = 6.0 Ic (A) = 0.30 Power (W) ta = 1 Rtja (C/W) = 175 Tstg/top (C) = -65 to +200 Hfe = 300 VCE(sat) (V) = 0.20 |
|
Original |
PDF
|