Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3553 NPN Search Results

    2N3553 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    2N3553 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N3553

    Abstract: 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic
    Text: 2N3553 2N3553 Silicon NPN Transistor RF Power Driver Description: The 2N3553 is a silicon NPN transistor in a TO39 type package designed for amplifier and oscillator applications in military and industrial equipment. Suitable for use as an output, driver, or in predriver


    Original     		2N3553 2N3553 175MHz, 100mA, 100MHz 100kHz 175MHz 250mA, 20html 2N3553 equivalent TO39 Package RF POWER TRANSISTOR NPN 7w RF POWER TRANSISTOR NPN 2N3553 NPN npn power amplifier circuit common emitter amplifier transistor 2n3553 4 npn transistor ic PDF

    Untitled

    Abstract: No abstract text available
    Text: m 2N3553 \ \ NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE T O -39 8 .8 9 0 - 9 .398 0.315- 0.335 (8.001- 8 .509) T MAXIMUM RATINGS 1.0 A lc V


    OCR Scan     		2N3553 2N3553 PDF

    multi-emitter transistor

    Abstract: 2NS553 2n3553
    Text: <Se.mi- Conductor ^Products., Unc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 TYPE 2N3553 VHP Silicon NPN Power Transistor The 2N3553 is a silicon epitaxial planar transistor of NPN structure. This device is intended for large signal,


    Original     		2N3553 2N3553 400MC) 2NS553 200mA* 250mA 100mA multi-emitter transistor PDF

    2N3553

    Abstract: 2N3553 NPN 2N3553 equivalent transistor 2n3553
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS IC 1.0 A VCE 40 V PDISS 7.0 W @ TC = 25 C O O O O O TJ -65 C to +200 C


    Original     		2N3553 2N3553 2N3553 NPN 2N3553 equivalent transistor 2n3553 PDF

    2N3553

    Abstract: No abstract text available
    Text: 2N3553 NPN SILICON RF TRANSISTOR DESCRIPTION: The ASI 2N3553 is Designed for Amplifier, Oscillator and Driver Applications Covering VHF-UHF Frequency. PACKAGE STYLE TO- 39 MAXIMUM RATINGS 1.0 A V Ie o m 40 V Pd iss 7.0 W @ Te = 25 OC Tj -65 OC to +200 OC Ts t g


    OCR Scan     		2N3553 PDF

    2n3375

    Abstract: 2n3375 transistor 2N3553
    Text: b'lE ]> • bbSB'lBl DOETTbb 3Tb 2N3375 2N3553 2N3632 IAPX A N AMER PHILIPS/DISCRETE SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in TO-60 metal envelopes with the electrodes


    OCR Scan     		2N3375 2N3553 2N3632 2N3553 The2N3375 2N3375 2N3632 2n3375 transistor PDF

    2N3553

    Abstract: 2N3375 2N3632 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor
    Text: b'îE D • bbS3T31 □DE‘ï7bb 3Tb BiAPX 2N3375 2N3553 2N3632 A SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case. The2N3375 and the 2N 3632 are n-p-n overlay transistors in T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		bbS3T31 2N3375 2N3553 2N3632 2N3553 2N3375 2N3632 T0-60 ic 2n35 data inductor 4312 020 36640 4312 020 36640 ic 2n35 Transistor 2n3375 2N35 2n3375 transistor PDF

    2N3553

    Abstract: 2N3375 WE VQE 23 F 2n3632 transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E
    Text: 41E D • IPHIN 711Qö2b 00EÖ033 1 2N3375 2N3553 2N3632 PHILIPS INTERNATIONAL T - 3 3 - 0 < ? SILICON EPITAXIAL PLANAR OVERLAY TRANSISTORS The 2N3553 is an n-p-n overlay transistor in a TO-39 metai envelope with the col lector connected to the case. The 2N3375 and the 2N3632 are n-p-n overlay transistors In T 0 -6 0 metal envelopes with the electrodes


    OCR Scan     		2n3375 2n3553 2n3632 2N3632 T0-60 WE VQE 23 F transistor 2n3553 2N3553 NPN philips 1968 philips 1969 philips TRANSISTORS 1968 WE VQE 11 E PDF

    2N3553

    Abstract: TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke
    Text: DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a 1995 Oct 27 Philips Semiconductors Product specification Silicon planar epitaxial


    Original     		2N3553 SC08a 2N3553 O-39/3 MBB199 TRANSISTOR 2n3553 inductor 4312 020 36640 MGC929 2N3553 equivalent 2N3553 NPN Planar choke PDF

    2N3553 JANTX

    Abstract: No abstract text available
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		2N3553 O205AD) 1-Aug-02 2N3553 JANTX PDF

    2N3553 JANTX

    Abstract: 2N3553 JANTXV 2N3553 JAN
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		2N3553 O205AD) 19-Jun-02 2N3553 JANTX 2N3553 JANTXV 2N3553 JAN PDF

    2N3553

    Abstract: 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor
    Text: 2N3553 MECHANICAL DATA Dimensions in mm inches NPN SILICON HIGH FREQUENCY TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. APPLICATIONS 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. 5.08 (0.200)


    Original     		2N3553 2N3553 205AD) 100kHz 100MHz 2N3553 NPN 2N3553 datasheet high gain low capacitance NPN transistor PDF

    t 3866 power transistor

    Abstract: transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor
    Text: 2N3553 SILICON NPN VHF POWER TRANSISTOR 571 HIGH GAIN DRIVE R FOR 28 V FM APPLICATIONS • • 2.5 W a t 175 MHz Minimum Gain 10 dB mechanical data • • - 6 , 6 - » -12,7 mm - -


    OCR Scan     		2N3553 O-117 O-128 O-131 O-129 20PEP t 3866 power transistor transistor 571 transistor 3866 s transistor d 5702 e d 5703 t 3866 transistor transistor 2N 5688 2N3553 transistor t 3866 3866 transistor 2n RF transistor PDF

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


    Original     		2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421 PDF

    PCR 406 J transistor

    Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
    Text: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim


    Original     		MIL-s-19500/341B W0/341A 2N3315, TX2N337S, 2N3553, TX2N3553, TX2N4440 2N3375 gik16wwlhma lns81 PCR 406 J transistor transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553 PDF

    2N3553

    Abstract: 2N3553 motorola U028
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N3553 2.5 W - 175 MHz HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed for amplifier and oscillator applications in m ilitary and industrial equipment. Suitable for use as output, driver or pre­


    OCR Scan     		2N3553 2N3553 2N3553 motorola U028 PDF

    2N3553

    Abstract: DATA TRANSISTOR
    Text: Technical Data TRANSISTOR maximum ratings Voltage, Collector to Base VCBO 65.0 V NO. 2N3553 Voltage, Collector to Emitter (VCE) 40.0 V TYPE NPN-RF Voltage, Emitter to Base (VEBO) 4.0 V empty empty Collector Current (IC) 1.0 A empty empty Base Current (IB)


    Original     		2N3553 2N3553 DATA TRANSISTOR PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3553 Dimensions in mm inches . Bipolar NPN Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar NPN Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 65V 0.41 (0.016) 0.53 (0.021)


    Original     		2N3553 O205AD) 17-Jul-02 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3553+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)65 I(C) Max. (A)350m Absolute Max. Power Diss. (W)7.0 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u° @V(CBO) (V) (Test Condition)30


    Original     		2N3553 Freq500M PDF

    BY1-1F

    Abstract: BAM40 A1512 2N5070 88-108 S100-28 A8012A BY177 S175-50 2N3553 NPN
    Text: VHF- 30-80 MHz Type Polarity 2N5071 A15-12* A80-12* * A80-12A* * NPN NPN NPN NPN V H F -88-108 MHz FM 75 NPN FM 150 NPN VH F 130-175 2N3632 2N3553 B15-12 B30-12 B45-12 BM80-12* * BAM20* BAM40* BAM80* BAM120* MHz NPN NPN NPN NPN NPN NPN NPN NPN NPN NPN


    OCR Scan     		S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* S30-12 S50-12* S100-12* S175-28* BY1-1F BAM40 A1512 88-108 A8012A BY177 S175-50 2N3553 NPN PDF

    2n3553

    Abstract: 2N3375 2N3632 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666
    Text: File No. 386 n n r p /jn RF Power T ran sisto rs UVAUDZ7U 2N 3375 2N 3553 2N 3632 D ivision3*6 40665 RCA 2N3632, 2N3553, 2N3375, 40665 a n d 40666 are e p ita x ia l silico n n-p-n tra n sis to rs of th e “ ov erlay ’* em itter electro d e co n stru ctio n . T hey are intended for u se in


    OCR Scan     		2N3375 2N3553 2N3632 2N3632, 2N3553, 2N3375, and40666 2N355 TRANSISTOR 2n355 2N3553 RCA npn Epitaxial Silicon zg 2N3632 RCA rca 2n3375 40666 PDF

    2N3553 motorola

    Abstract: 2n3961 2n3632 2N3553 2N3375 MOTOROLA 2n3553
    Text: MOTOROLA i SC -CDIODES/OPTOJ 6367255 MOTOROLA SC 34 DE J t . 3 t . 7 E 5 5 DIODES/OPTO 34C 3 80 50 7" SILICON RF TRANSISTOR DICE (continued) ' - "3 I I DOaf iDSD - D 23 2C3553 DIE NO. — NPN LINE SOURCE — RF502.140 This die provides performance equal to or better than that of


    OCR Scan     		RF502 2N3375 2N3553 2N3632 2N3961 2C3553 2N3553 motorola 2n3961 MOTOROLA 2n3553 PDF

    Untitled

    Abstract: No abstract text available
    Text: DARLINGTON AMPLIFIERS Electrical Characteristics @ 25°C M aximum Ratings Type NPN pD A m bient mW V CB V CE Volts Volts VQ ^ISat @ l ^ / l g M in/M ax mA Volts m A /m A ft MHz Min 7000/70,000 100 1.6 100/10 60* 30 TO-18 10 1.8 100/10 60* 30 TO-72 TO-72 H F E @ *C


    OCR Scan     		2N997 2N998 2N999 2N2723 2N2724 2N2725 PDF

    BY1-1F

    Abstract: A15-12 A1512 S175-50 BAM40 BY1-1 BY17 S100-12 S100-28 S15-28
    Text: BH AR AT ELEK/SEP1IC0ND DI 47E D • 1 4 3 5 3 ^ 0 OO DD Ol ? 375 ■ BELI T " 3 3 - Ô / RF DEVICES H.F. 2 -3 0 MHz Type Polarity S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* * S30-12*y S50-12* S100-12* S1 75-28* * S1 75-50 A’ * NPN NPN NPN NPN NPN NPN


    OCR Scan     		00Q0017 S15-28 S30-28 2N5070 S50-28 S100-28 S15-12* S30-12* S50-12* S100-12" BY1-1F A15-12 A1512 S175-50 BAM40 BY1-1 BY17 S100-12 PDF