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    2N3634 TRANSISTOR Search Results

    2N3634 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
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    2N3634 TRANSISTOR Price and Stock

    Microchip Technology Inc 2N3634

    Trans GP BJT PNP 140V 1A 3-Pin TO-39
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N3634
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    • 100 $9.06
    • 1000 $9.06
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    2N3634 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3634 PNP silicon general purpose transistor 9.21 Transistors Transisto. 1 of 1 Home Part Number: 2N3634 Online Store 2N3634 Diodes PNP s ilic o n general purpo s e t rans is t o r Transistors Enter code INTER3 at


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    2N3634 com/2n3634 2N3634 PDF

    2N3634

    Abstract: 2N36
    Text: Data Sheet No. 2N3634 Generic Part Number: 2N3634 Type 2N3634 Geometry TBD Polarity PNP Qual Level: Pending REF: MIL-PRF-19500/357 Features: • • • • General-purpose low-power amplifier transistor which operates over a wide temperature range. Housed in a TO-39 case.


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    2N3634 MIL-PRF-19500/357 MIL-PRF-19500/357 3x10-4 2N3634 2N36 PDF

    2N3635

    Abstract: No abstract text available
    Text: 2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER


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    2N3634 2N3635 2N3634 17-September 150mA 2N3635 PDF

    2N3637UB

    Abstract: 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


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    MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637UB 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636 PDF

    2n3637

    Abstract: No abstract text available
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


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    2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 2N3634/L 2N3635/L 2n3637 PDF

    2N3635

    Abstract: 2n3634
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


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    2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 205AA 2N3634L 2N3635 2n3634 PDF

    2N3635

    Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
    Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L PDF

    2N3634

    Abstract: No abstract text available
    Text: 2N3634 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)


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    2N3634 O-205AD) -100V -50mA 2N3634 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


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    MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB PDF

    2N3636 transistor

    Abstract: 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


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    MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3636 transistor 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363 PDF

    2N3635

    Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L


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    MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3635 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L PDF

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634 PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR 2N3634 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    2N3634 -140V O-205AD) PDF

    Untitled

    Abstract: No abstract text available
    Text: SILICON PNP TRANSISTOR 2N3634 • • • • • General Purpose PNP Silicon Transistor High Voltage, High Speed Saturated Switching Low Power Amplifier Applications Hermetic TO39 Package Screening Options Available ABSOLUTE MAXIMUM RATINGS TC = 25°C unless otherwise stated


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    2N3634 -140V 71mW/Â O-205AD) PDF

    2N3634

    Abstract: No abstract text available
    Text: ’“ 3 .î " -ty r T f 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS I _ • High Voilage— to l7 5 V . Vq ^q • Switching and Amplifier Applications MAXIMUM RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 Unit Coliector-Emltter Voltage v CEO


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    2N3634 2N3637 2N3635 2N3636 2N3637 00V--------- PDF

    2N3637

    Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
    Text: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage


    OCR Scan
    2n3634 2n3635 2N3636 2N3637 2N3634 2N3637 O-205AD) -100V 2N3636-37 2N3634-35 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635 PDF

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿ 888888888 | M iwiHBBffi m sssBP .rfHHHHHHHHMh. itittnnnnn hhhhhhk-. iiHiiftBHhr. 1 1 I I ^88888 % # 1 Data S heet No. 2N 3634 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3634 Type 2N3634 G eom etry TBD P olarity PNP Q ual Level: Pending REF: M IL-P R F -19 5 0 0 /3 5 7


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    2N3634 F-19500/357 PDF

    STD 357

    Abstract: TD357 2N3634 microsemi
    Text: Microsemi PNP Transistors •. Part Number JANTXV2N4033 2N5333 2N3467 JAN2N3467 JAN2N3467L JANTX2N3467 JANTX2N3467L JANTXV2N3467 JANTXV2N3467L 2N3468 ¡ JAN2N3468 JAN2N3468L JANTX2N3468 JANTX2N3468L JANTXV2N3468 JANTXV2N3468L 2N3634 2N3634L JAN2N3634 JAN2N3634L


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    PDF

    2N3634 MOTOROLA

    Abstract: 2N3636 2N3635 MOTOROLA 2N3634 2N3637
    Text: 2N3634 thru 2N3637 M AXIM U M RATINGS Symbol 2N3634 2N363S 2N3636 2N3637 U n it C o lle c to r-E m itte r V o lta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a se V olta g e v EBO Rating - 5 .0 1.0 A de


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    2N3634 2N363S 2N3636 2N3637 2N3637 O-205AD) 2N3634 MOTOROLA 2N3635 MOTOROLA PDF

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467 PDF

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494 PDF

    2n3634

    Abstract: 2N3634 MOTOROLA
    Text: 2N3634 M A X IM U M RATINGS thru Symbol 2N3634 2N3635 2N3636 2N3637 Unit C o lle c to r-E m itte r V olta g e v CEO -1 4 0 -1 7 5 Vdc C o lle c to r-B a se V o lta g e VCBO -1 4 0 -1 7 5 Vdc Rating E m itte r-B a se V o lta g e - 5 .0 vebo >c - 1 .0 Ade T o ta l D evice D issip a tio n


    OCR Scan
    2N3634 2N3634 2N3635 2N3636 2N3637 2N3637 O-205AD) 2N3634-35 2N3634 MOTOROLA PDF

    2N372A

    Abstract: 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 2N3501 2N3506
    Text: SEMELAB[ MflE D • A1331B7 DDDDMBb 02 ^ ■ SMLB SEMELAB LTDT»3.7«0l HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Number Rei Code 2N3501 2N3506 2N3507 2N3508 2N3509 2N3511 2N3571 2N3583 2N3584 2N3585 2N3634 2N3635 2N3636 2N3637 2N3665


    OCR Scan
    2N3501 2N3506 2N3507 2N3508 l/10m 2N3509 2N3511 15min 2N3571 2N372A 2N3680 2N3809 T072 2N2979DCSM 2N3734 BFX81 T052 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s


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    2N3634 2N3635 2N3636 2N3637 O-205AD) PDF