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    2N3635 Search Results

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    2N3635 Price and Stock

    Microchip Technology Inc 2N3635

    TRANS PNP 140V 1A TO39
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    Microchip Technology Inc 2N3635UB

    TRANS PNP 140V 1A 3SMD
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    Microchip Technology Inc JAN2N3635L

    TRANS PNP 140V 1A TO5
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    Microchip Technology Inc JANSL2N3635

    TRANS PNP 140V 1A TO39
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    Microchip Technology Inc JANSP2N3635

    TRANS PNP 140V 1A TO39
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    2N3635 Datasheets (53)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3635 Microsemi PNP Silicon Amplifier Transistor Original PDF
    2N3635 Motorola Bipolar Transistor, General Purpose Transistors PNP Silicon - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Original PDF
    2N3635 Semelab Bipolar PNP Device in a Hermetically Sealed TO39 Metal Package - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Original PDF
    2N3635 Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
    2N3635 Boca Semiconductor GENERAL PURPOSE TRANSISTOR (PNP SILICON) - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Scan PDF
    2N3635 Central Semiconductor BJT, PNP, Silicon Epitaxial Transistor, IC 1A - Pol=PNP / Pkg=TO39 / Vceo=140 / Ic=1 / Hfe=100/300 / fT(Hz)=- / Pwr(W)=1 Scan PDF
    2N3635 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N3635 Crimson Semiconductor Transistor Selection Guide Scan PDF
    2N3635 General Diode Transistor Selection Guide Scan PDF
    2N3635 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N3635 Motorola European Master Selection Guide 1986 Scan PDF
    2N3635 Motorola Power Transistor Selection Guide Scan PDF
    2N3635 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N3635 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N3635 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3635 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N3635 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N3635 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N3635 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N3635 Unknown Shortform Electronic Component Datasheets Short Form PDF

    2N3635 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N3025

    Abstract: 2N3026 2N3021 2N3022 2N3023 2N3024
    Text: SOLID STATE DEVICES, INC PNP POWER & HIGH VOLTAGE Device Type 2N2983 2N2984 2N2985 2N2986 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3250 2N3250A 2N3251 2N3251A 2N3467 2N3468 2N3485 2N3485A 2N3486 2N3486A 2N3634 2N3635 2N3636 2N3637 2N3660 2N3661 2N3719 2N3720


    Original
    PDF 2N3779 2N3780 2N3781 2N3789 2N3790 2N3791 2N3025 2N3026 2N3021 2N3022 2N3023 2N3024

    Untitled

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


    Original
    PDF 2N3635 O205AD) 10/50m 17-Jul-02

    2N3635 MOTOROLA

    Abstract: 2N3635 2N3637 2N3634 MOTOROLA
    Text: MOTOROLA Order this document by 2N3635/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N3635 2N3637 PNP Silicon 2 BASE 1 EMITTER 3 Rating Symbol 2N3635 2N3637 Unit Collector – Emitter Voltage VCEO – 140 – 175


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    PDF 2N3635/D 2N3635 2N3637 2N3635/D* 2N3635 MOTOROLA 2N3635 2N3637 2N3634 MOTOROLA

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3635 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


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    PDF 2N3635L

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N3635 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original
    PDF 2N3635 Freq200M

    Untitled

    Abstract: No abstract text available
    Text: 2N3635L+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V).6 @I(C) (A) (Test Condition)50m


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    PDF 2N3635L

    Untitled

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company PNP SILICON PLANAR RF TRANSISTORS 2N3635 2N3636 2N3637 TO-39 Metal Can Package 2N3635 and 2N3637 Are PNP Silicon Transistros For High Voltage Switching and Low Power Amplifier.


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    PDF 2N3635 2N3636 2N3637 2N3635 2N3637 C-120 37Rev260901

    2N3635

    Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L


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    PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3635 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L

    Untitled

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


    Original
    PDF 2N3635 O205AD) 10/50m 19-Jun-02

    Untitled

    Abstract: No abstract text available
    Text: 2N3635 MECHANICAL DATA Dimensions in mm inches PNP SILICON TRANSISTOR 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) FEATURES 6.10 (0.240) 6.60 (0.260) • High Voltage Switching 12.70 (0.500) min. • Low Power Amplifier Applications 0.89 max. (0.035)


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    PDF 2N3635 O-205AD) Base320 x10-4

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    PDF 2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634

    2N3635

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


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    PDF 2N3635 O205AD) 10/50m 1-Aug-02 2N3635

    2N3635

    Abstract: No abstract text available
    Text: 2N3634 2N3635 SILICON PNP TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3634 and 2N3635 are silicon PNP epitaxial planar transistors designed for general purpose switching and amplifier applications. MARKING: FULL PART NUMBER


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    PDF 2N3634 2N3635 2N3634 17-September 150mA 2N3635

    2N3635

    Abstract: No abstract text available
    Text: 2N3635 GENERAL PURPOSE TRANSISTOR PNP SILICON 6.95 Tra. 1 of 1 Home Part Number: 2N3635 Online Store 2N3635 Diodes G ENERAL PURPO SE TRANSISTO R ( PNP SILIC O N) Transistors Enter code INTER3 at checkout.*


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    PDF 2N3635 com/2n3635 2N3635

    2N3635

    Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
    Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


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    PDF MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L

    2N3637

    Abstract: 2N3634 2N3635 2N3636 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635
    Text: Boca Semiconductor Corp. BSC http://www.bocasemi.com 2N3634 thru 2N3637 M A X I M U M R A T IN G S Symbol 2N3634 2N3635 2N3636 2N3637 C o lle cto r-E m itte r Voltage v CEO -1 4 0 -1 7 5 Vdc Collector-B ase V o ltage VCBO -1 4 0 -1 7 5 Vdc Em itter-Base V o ltage


    OCR Scan
    PDF 2n3634 2n3635 2N3636 2N3637 2N3634 2N3637 O-205AD) -100V 2N3636-37 2N3634-35 2n3637S transistor 2N3 2N3636.37 2N3634-2N3635

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan
    PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan
    PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494

    Untitled

    Abstract: No abstract text available
    Text: 2N3634 thru 2N3637 M A X IM U M RATINGS Symbol 2N3634 2N3635 2N3636 2N3637 C o lle c to r -E m itte r V o lta g e v CEO -1 4 0 -1 7 5 V dc C o lle c to r-B a s e V o lta g e v CBO - 140 -1 7 5 Vdc E m itte r-B a s e V o lta g e vebo Rating 5.0 Unit A de C o lle c to r C u rre n t — C o n tin u o u s


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    PDF 2N3634 2N3635 2N3636 2N3637 O-205AD)

    LG 631 IC

    Abstract: 2N3634 2N3635 I2406 ic lg 631
    Text: Data Sheet Central 2N3634 2N3635 Sem iconductor Corp. PNP SILIC O N TR A N SIST O R 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JED E C TO-39 C A S E Manufacturers of World Class Discrete Semiconductors DESCRIPTION


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    PDF 2N3634 2N3635 2N3635 150mA 100MHz LG 631 IC I2406 ic lg 631

    Untitled

    Abstract: No abstract text available
    Text: Maximum Ratings No. 2N2S04 V Mm 60 ^CEO ^ao Pd •M (V) (W) Min Min 9Tc=25"c 40 0.6 (A) 0.6 u (A) lCBO ü*A) e (V) Max 0.02 ttS (mA) Max ^CE • 00 ^FE Min 2N2905 2N2905A 2N3072 2N3073 2N35Q2 2N3503 2N3635 2N3S36 2N3637 2N4030 60 60 60 60 60 45 60 140 175


    OCR Scan
    PDF 2N2S04 2N2904A BFX38 BFX40 BFX41 BFX87 BFX88 CK100 CK150

    Untitled

    Abstract: No abstract text available
    Text: p semcofl ¿ 888888888 | M iwiHBBffi msssBP itittnnnnn .rfHHHHHHHHMh. 1 1 I I hhhhhhk-. ^88888 % # iiHiiftBHhr. 1 D at a S h e e t No. 2 N 3 6 3 5 $ sdL SEMICONDUCTORS G eneric Part Num ber: 2N3635 Type 2N3635 G eom etry TBD Polarity PNP Qual Level: Pending


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    PDF 2N3635 MIL-PRF-19500/357