Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N3635 JAN Search Results

    SF Impression Pixel

    2N3635 JAN Price and Stock

    Microchip Technology Inc 2N3635JAN/TR

    Trans GP BJT PNP 140V 1A 3-Pin TO-39 T/R - Tape and Reel (Alt: JAN2N3635/TR)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N3635JAN/TR Reel 100
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Microchip Technology Inc 2N3635JANTXV

    Transistor GP BJT PNP 140V 1A 3-Pin TO-39 - Bulk (Alt: JANTXV2N3635)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N3635JANTXV Bulk 22 Weeks 101
    • 1 -
    • 10 -
    • 100 -
    • 1000 $29.4015
    • 10000 $27.3261
    		Buy Now

    Microchip Technology Inc JANTX2N3635

    Bipolar Transistors - BJT 140 V Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANTX2N3635 265
    • 1 $13.06
    • 10 $12.6
    • 100 $11.79
    • 1000 $10.9
    • 10000 $10.9
    		Buy Now

    Microchip Technology Inc JANSR2N3635L

    Bipolar Transistors - BJT 140 V RH Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANSR2N3635L 50
    • 1 $146.6
    • 10 $135.5
    • 100 $133.46
    • 1000 $133.46
    • 10000 $133.46
    		Buy Now

    Microchip Technology Inc JANSR2N3635

    Bipolar Transistors - BJT 140 V RH Small-Signal BJT
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics JANSR2N3635
    • 1 -
    • 10 -
    • 100 $129.6
    • 1000 $129.6
    • 10000 $129.6
    		Get Quote
    Find more 2N3635 JAN price and stock on Findchips.com

    2N3635 JAN Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N3635JAN New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635JANS Motorola PNP Silicon Small Signal General Purpose Transistor Original PDF
    2N3635JANS New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635JANTX New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF
    2N3635JANTXV New England Semiconductor PNP SILICON AMPLIFIER TRANSISTOR Original PDF

    2N3635 JAN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N3635

    Abstract: 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L
    Text: TECHNICAL DATA PNP SILICON AMPLIFIER TRANSISTOR Qualified per MIL-PRF-19500/357 Devices 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L Qualified Level JAN JANTX JANTXV JANS 2N3637 2N3637L MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637L 2N3634* 2N3635 2N3634 2N3637 2n3637 data 2N3636 2N3636 transistor 2N3637 JAN 2N3634L 2N3635L 2N3636L PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA 2N3634/ L, JTX, JTXV, JANS 2N3635/ L, JTX, JTXV, JANS 2N3636/ L, JTX, JTXV, JANS 2N3637/ L, JTX, JTXV, JANS MIL-PRF QML DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Symbol S2N3634, L S2N3636, L Unit


    Original     		2N3634/ 2N3635/ 2N3636/ 2N3637/ MIL-PRF-19500/357 S2N3634, S2N3636, S2N3635, S2N3637, PDF

    2n3637

    Abstract: No abstract text available
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 2N3634/L 2N3635/L 2n3637 PDF

    2N3635

    Abstract: 2n3634
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Low Power Transistors PNP Silicon http://onsemi.com Features COLLECTOR 3 • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L 205AA 2N3634L 2N3635 2n3634 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


    Original     		2N3635 O205AD) 10/50m 17-Jul-02 PDF

    2N3634

    Abstract: 2N3635 JAN 2N3637 2N3635
    Text: 2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L Product Preview Low Power Transistors http://onsemi.com PNP Silicon COLLECTOR 3 Features • MIL−PRF−19500/357 Qualified • Available as JAN, JANTX, JANTXV and JANHC 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C unless otherwise noted


    Original     		2N3634, 2N3634L, 2N3635, 2N3635L, 2N3636, 2N3636L, 2N3637, 2N3637L MIL-PRF-19500/357 2N3634/L 2N3634 2N3635 JAN 2N3637 2N3635 PDF

    2N3635

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


    Original     		2N3635 O205AD) 10/50m 1-Aug-02 2N3635 PDF

    2N3635

    Abstract: 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L 2N3634UB 2N3635 2N3635L


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3635 2N3637UB 2N3634 JANTX 2N3634UB 2N3636 2n3635ub 2N3637 10VDC 2N3634 2N3634L PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 140V 0.41 (0.016)


    Original     		2N3635 O205AD) 10/50m 19-Jun-02 PDF

    2n3637

    Abstract: 2N3636 2N3635 2N3634
    Text: TECHNICAL DATA 2N3634, 2N3634L JTX, JTXV 2N3635, 2N3635L JTX, JTXV 2N3636, 2N3636L JTX, JTXV 2N3637, 2N3637L JTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/357 PNP SILICON AMPLIFIER TRANSISTORS MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage


    Original     		2N3634, 2N3634L 2N3635, 2N3635L 2N3636, 2N3636L 2N3637, 2N3637L MIL-PRF-19500/357 2n3637 2N3636 2N3635 2N3634 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3635 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANS Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3635 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3635 Freq200M PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N3635+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


    Original     		2N3635 Freq200M PDF

    2N3636 transistor

    Abstract: 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3636 transistor 2N3635 10VDC 2N3637UB 2N3637 2N3636 2N3634 2n3635ub 50krads 2N363 PDF

    10VDC

    Abstract: 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637UB
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 10VDC 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3636 2N3636L 2N3637 2N3637UB PDF

    2N3637UB

    Abstract: 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB 2N3637UB 2N3634UB 2N3634 2N3637 10VDC 2n3637 data 2N3634L 2N3635 2N3635L 2N3636 PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 PNP SILICON SWITCHING TRANSISTOR


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357 DEVICES LEVELS 2N3634 2N3634L


    Original     		MIL-PRF-19500/357 2N3634 2N3634L 2N3634UB 2N3635 2N3635L 2N3635UB 2N3636 2N3636L 2N3636UB PDF

    2N3634

    Abstract: No abstract text available
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 6 August 2013. MIL-PRF-19500/357M 6 May 2013 SUPERSEDING MIL-PRF-19500/357L 17 July 2010 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, AMPLIFIER,


    Original     		MIL-PRF-19500/357M MIL-PRF-19500/357L 2N3634 2N3637, 2N3634UB 2N3637UB, 2N3634UBN 2N3637UBN, 2N3634L 2N3637L, PDF

    2N3634 MOTOROLA

    Abstract: m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636
    Text: MOTOROU Orderth18 document by2N3WWD SEMICONDUCTOR TECHNICAL DATA o 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, JTXV JTXV, JANS JTXV, JANS JTXV, JANS Processed per MIL+-19500/357 PNP Silicon SmallSignal o General-Purpose Transistor Ic Collector Current,Maimurn


    Original     		Orderth18 2N3634JTX, 2N3635JTX, 2N3636JTX, 2N3637JTX, CHARACTERlST19 2N3634, 2N3635 2N3636, 2N3637 2N3634 MOTOROLA m21 transistor 2N3634 2N3637 transistor m21 MIL-19500 2N3634JTX 2N3635 2N3635JTX 2N3636 PDF

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan     		O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467 PDF

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan     		O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494 PDF

    2N3834

    Abstract: id9e
    Text: T É L E » Y NE COMPO NENTS" Û T l T b ü a O Q Q b S a ? t. aöE D 2N3634 THRU 2N3637 HIGH VOLTAGE PNP SILICON TRANSISTORS O GEOMETRY 480 • JAN, JAN-TX, JAN-TXV Available • High Voltage— to 175 V. VCE0 • Switching and Amplifier Applications MAXIMUM RATINGS


    OCR Scan     		2N3634 2N3637 2N3635 2N3636 20ttSEC 00V-------- 100VTURN-ON 2N3834 id9e PDF