2SB641 r
Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30
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Original
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2N1221
2S3030
BCZ10
2S302
HA9048
TP3S38
2N923
BCY28
2SB641 r
2SB641
2N3633
2N3608
2N3588
BC381
2N3642
3SM diode
LOW-POWER SILICON PNP
2N3524
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PDF
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2SB641
Abstract: BC181 3SM diode CS9012 SF158 2S302 LOW-POWER SILICON PNP 2N924 BCZ10 HA9048
Text: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30
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Original
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2N1221
2S3030
BCZ10
2S302
HA9048
TP3S38
2N923
BCY28
2SB641
BC181
3SM diode
CS9012
SF158
LOW-POWER SILICON PNP
2N924
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PDF
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70413080
Abstract: 70473180 SAC-187 Motorola 70483180 70483100 70484200 70487478 70484140 SJ-6357 70483180
Text: SEMI-CONDUCTOR/TRANSISTOR CROSS-REFERENCE LIST Peavey Electronics Corporation ORIGINAL IN-HOUSE NUMBER ALTERNATE IN-HOUSE NUMBER FIELD REPLACEMENT NUMBER ORDER NUMBER NOTES TO-92 TRANSISTORS 2N3391 A SPS-953(A, B) MPS-8097, 2N6520 MPS-A18, 2N6539, SK-3919
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Original
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2N3391
SPS-953
MPS-8097,
2N6520
MPS-A18,
2N6539,
SK-3919
2N4249
SPS-690,
PN-2907A
70413080
70473180
SAC-187
Motorola 70483180
70483100
70484200
70487478
70484140
SJ-6357
70483180
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PDF
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Untitled
Abstract: No abstract text available
Text: Unipolar Digital Hall-Effect Sensor ICs SS340RT/SS440R Series Datasheet Unipolar Digital Hall-Effect Sensor ICs The SS340RT/SS440R sensor ICs are small, versatile digital Hall-effect devices that are operated by the magnetic field from a permanent magnet or an electromagnet. They are designed to respond to a single pole: North SS340RT or South
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Original
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SS340RT/SS440R
SS340RT)
SS440R)
SS341RT
SS441R
SS343RT
SS443R
SS349RT
SS449R
|
PDF
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2N3638 equivalent
Abstract: 2N3638 mos inverter 74HC04 led and phototransistor simple circuit
Text: More Speed from Optocouplers Appnote 5 by David M. Barton Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The
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Original
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PDF
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2N3638 datasheet
Abstract: 2N3638 equivalent 2N3638 led and phototransistor simple circuit 74HC04
Text: More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The
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Original
|
1-888-Infineon
2N3638 datasheet
2N3638 equivalent
2N3638
led and phototransistor simple circuit
74HC04
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PDF
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2N3638
Abstract: 2N3638 equivalent 2N3638 datasheet 74HC04 for 74hc04 83705 R/optocoupler base resistor
Text: VISHAY Vishay Semiconductors More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must "sink" the current from one T2L load
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Original
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2N363he
28-Feb-03
2N3638
2N3638 equivalent
2N3638 datasheet
74HC04
for 74hc04
83705
R/optocoupler base resistor
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PDF
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led and phototransistor simple circuit
Abstract: 2N3638 74HC04 Pulse Drive LED optocoupler base resistor
Text: More Speed from Optocouplers Appnote 5 Figure 1 shows a typical circuit employing an optocoupler to transmit logic signals between electrically isolated parts of a system. In the circuit shown, the optocoupler must “sink” the current from one T2L load plus a pull-up resistor to VCC. The
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Original
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74HC04)
17-August-01
led and phototransistor simple circuit
2N3638
74HC04
Pulse Drive LED
optocoupler base resistor
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PDF
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2N3638
Abstract: 2N2907 SOT-23 2n2907 SOT23 2N2907 LM312 LM334 LM4250C
Text: Advanced Monolithic Systems AMS3100-1.2 MICROPOWER VOLTAGE REFERENCE FEATURES APPLICATIONS • ±6 mV ±0.5% max. initial tolerance (A grade) • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.240 • Max. 0.5Ω Ω Dynamic Impedance (A grade)
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Original
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AMS3100-1
OT-23
6680B
OT-23
2N3638
2N2907 SOT-23
2n2907 SOT23
2N2907
LM312
LM334
LM4250C
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PDF
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2N3638
Abstract: 2N3638 datasheet AMS9491 AMS9491A AMS9491AN AMS9491AS AMS9491B AMS9491BN AMS9491BS LM334
Text: Advanced Monolithic Systems AMS9491 1.235V VOLTAGE REFERENCE FEATURES APPLICATIONS • ±10 mV max. initial tolerance A grade • Operating Current 10µ µ A to 20mA • Low Voltage Reference 1.235 • Max. 0.6Ω Ω Dynamic Impedance (A grade) • Low Temperature Coefficient
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Original
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AMS9491
AMS9491
152mm)
254mm)
6680B
2N3638
2N3638 datasheet
AMS9491A
AMS9491AN
AMS9491AS
AMS9491B
AMS9491BN
AMS9491BS
LM334
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PDF
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2N3638
Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW
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OCR Scan
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2N4969
2N3641
2N4436
EN697
MPSA10
MPSA20
2N3904
2N3903
EN3903
MPS6531
2N3638
2N4121
2N4945
TO-106
2N4122
SE1001
2N5855
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PDF
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2N3638
Abstract: transistor 2n2222 TO-90 2N3638 transistor 2SS52M-S 2n2222 npn transistor honeywell 2SS52M Series 2SS52M 2SSP 2N2222 HJ 6 C
Text: 3 1 1- i s n Honeywell Installation Instructions for the 2SS52M Series Magnetoresistive Position Sensors A WARNING PERSONAL INJURY • DO NOT USE these products as safety or emergency stop devices, or in any other application where failure of the product could
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OCR Scan
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2SS52M
2SS52M,
PK80077-1-EN
2N3638
transistor 2n2222 TO-90
2N3638 transistor
2SS52M-S
2n2222 npn transistor
honeywell 2SS52M Series
2SSP
2N2222
HJ 6 C
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PDF
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2N3638
Abstract: MPS8093 2N3072 MPS6534 motorola 2N3133 MOTOROLA 2n3638a 2N5221 2n3133 2n3136 2n2907a motorola
Text: MOTOROLA SC -CDIODES/OPTO} ' 34 ]>F|b3t,75SS 3037^70 H 6367255 M O T O R O L A SC (DIODES/OPTO f 3^C ~ 37978 T^3 7 -/7 SILICO N SM ÂLL-SIG NAL TR A N SISTO R DICE (continued) 2C2907A DIE NO. — pnp LINE SOURCE — DMB151 C« This die provides performance equal to or better than that of the following
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OCR Scan
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DMB151
2C2907A
2N721
2N722
2N978
2N1131
2N1132
2N1991
2N2694
2N2695
2N3638
MPS8093
2N3072
MPS6534 motorola
2N3133 MOTOROLA
2n3638a
2N5221
2n3133
2n3136
2n2907a motorola
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PDF
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2N4148
Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Text: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.
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OCR Scan
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2N2419A
2N3001
2N3730
2N4002
2N4140
2N4299
2N2483
2N3002
2N3731
2N4003
2N4148
2N3638 transistor
2N3638
Transistor 2n3005
2N2706
2n4146
transistor 2n2706
2N4250
2N4147
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PDF
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2n3638
Abstract: No abstract text available
Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP Maxim um R atin gs 2N4356 2N364S V CBO VCEO V EBO (V) Min (V) Min (V) Min BO B0 5.0 60 2N4354 2N4355 2N3644 60 60 45 60 60 60 45 IcBO (MA) Max 0.05 V CB (V) Min 50 5.0 5.0 5.0 5.0 »FE Max 0.05 0.04 50 50 30 VCE(Sat)
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OCR Scan
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O-105
2N4356
2N4354
2N4355
2N3644
OL298
2N3638
2N3638A
CIL591
C1L592
2n3638
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PDF
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2N3644
Abstract: 2N3638 2N3638A 2N3645 CIL297 2N4356 2N4354 2N4355 CIL295 CIL296
Text: TO-105 EPOXY PACKAGE TRANSISTORS PNP M ax m um P ating s 2N4356 V CEO (V) Min (V) Min BO SO V EBO (V) Min 5.0 'cBO (MA) Max 0.05 VCB (V) Min 50 60 60 5.0 Max 60 5.0 0.05 50 2N3644 60 45 60 45 5.0 5.0 0.05 0.04 50 30 (V) Max Max & V BE(Sat) (V) Min Max
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OCR Scan
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O-105
2N4356
2N3645
CIL296
CIL297
OL298
2N3638
2N3638A
CIL591
C1L592
2N3644
2N4354
2N4355
CIL295
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PDF
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2N3566
Abstract: 2N3638 2N3638A bc119 NPN BC738 PN6076 2n3638 fairchild high voltage npn to-92 BC728-6 MPS3393
Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) Item DEVICE NO. Polarity NPN PNP hpE @ ic VCEO (V c e r ) (hfe) V mA Min/Max Min VCE(sat) v
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OCR Scan
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MPS2924
2N4124
MPS3393
EN5172
O-106
MPS5172
2N5135
O-105
2NS225
2NS226
2N3566
2N3638
2N3638A
bc119 NPN
BC738
PN6076
2n3638 fairchild
high voltage npn to-92
BC728-6
MPS3393
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PDF
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2N5139
Abstract: 2N4121 2N4122 EN3904 2n3569 2n3569 to-105 2n4355 2N3906/MPSA70
Text: TRANSISTORS—SMALL SIGNAL PNP GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VcEO PLASTIC PACKAGE (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) *V CER * VOLTS TYPE MIN V CE(sat) LU LL V CEO VOLTS @ *c mA MAX hlFE MIN - MAX @ @ 50 @ 2N5221
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OCR Scan
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2N5221
2N5139
2N5142
2N5143
MPS6563
MPS6519
2N4126
2N3638A
MPS3638A
MPS3702
2N4121
2N4122
EN3904
2n3569
2n3569 to-105
2n4355
2N3906/MPSA70
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PDF
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2N3638
Abstract: 2N3638A replacement for 2n2905 2N5816 2N5815 HS5810 2n2905 replacement 2N6003 2N5819 2N6006
Text: NPN SILICON SIGNAL HIGH CURRENT GENERAL PURPOSE AMPLIFIERS AND SWITCHES TO 18 PACKAGE @ 10mA Min. V 'E- (i'll 1 @ 500mA, 50mA Max. (V (V) VCEO hFF (a) 2V, 2mA Type 2 N 5810 60-200 * 2N5812 150-500 * 2 N 5814 60-120 C cb @ 10V Typical Pt Ta = 2!5°C (mW) Typical
|
OCR Scan
|
500mA,
2N5810
2N5811
2N5812
2N5813
2N5814
2N5815
2N5816
2N5817
2N5818
2N3638
2N3638A
replacement for 2n2905
HS5810
2n2905 replacement
2N6003
2N5819
2N6006
|
PDF
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2N3638A
Abstract: 2N3638 2N3856 2N5815 d33025 2N6000 2N4424 2N6002 GET3013 GET3638
Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA ra p 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pnp GET3014 GET3S3B GET3638A GET3638 GET3638A
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OCR Scan
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50/iA
800mA
GET706
GET708
GET914
GET3013
GET3646
GE1705
CET708
2N3638A
2N3638
2N3856
2N5815
d33025
2N6000
2N4424
2N6002
GET3638
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PDF
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2N5133
Abstract: to 106 2n5133 2N3638A 2N3563 2N3638 2N3644 2N5088 2N5089 2N5127 2N5131
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NO ISE LE V E L A M P LIF IE R Cont'd. a Vcb V CE V EB I'F E at •c VCE V V V min max mA V 2N 5088 2 N 5089 2N5127 2N5131 2N5133 30 25 20 20
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OCR Scan
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2N5088
2N5089
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
to 106 2n5133
2N3638A
2N3563
2N3638
2N3644
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PDF
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2N3563
Abstract: 2N5133 2N3638 2N3644 2N3645 2N5132 2N3638A 2N3702 to 106 2n5133 2N5088
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. X a Vcb V CE V EB hFE at •c V CE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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OCR Scan
|
D0D0S15
2N5088
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
2N3563
2N3638
2N3644
2N3645
2N5132
2N3638A
2N3702
to 106 2n5133
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PDF
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2N3638
Abstract: 2N3638A MPS-3638A MPS3638A NT 407 F MPS3638 2N3638/A "2n3638"
Text: MPS3638 silicon MPS3638A NPN SILICON A N N U LA R TRANSISTORS . designed for high-current switching applications. NPN SILICON Collector-Emitter Sustaining Voltage — VCEQ(sus) = 25 Vdc (Min) SWITCHING TRANSISTORS DC Current Gain Specified — 1.0 mAdc to 300 mAdc
|
OCR Scan
|
MPS3638
MPS3638A
MPS3638A
2N3638
MPS3638
2N3638A
MPS-3638A
NT 407 F
2N3638/A
"2n3638"
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PDF
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2N3563
Abstract: 2N3645 to 106 2n5133 2N3638 2N3638A 2N3644 2N5133 2N5088 2N5089 2N5127
Text: CENTRAL SEMICONDUCTOR 1989963 CENTRAI. SEMICONDUCTOR DE | n f H T b B 00D0S15 H 61C 00212 t>l X NPN EPOXY - LOW NOISE LEVEL AMPLIFIER Cont'd. a Vcb VCE V EB I'FE at •c VCE V V V min max mA V 2N5088 2N5089 2N5127 2N5131 2N5133 30 25 20 20 20 30 25 12 15
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OCR Scan
|
2N5088
2N5089
2N5127
O-106
2N5131
2N5133
2N5209
2N5210
2N3563
2N3645
to 106 2n5133
2N3638
2N3638A
2N3644
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PDF
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