2N3703
Abstract: No abstract text available
Text: 2N3703 360mW silicon general purpose AF transistor 2.26 Transistors T. 1 of 1 Home Part Number: 2N3703 Online Store 2N3703 Diodes 3 6 0 m W s ilic o n general purpo s e AF t rans is t o r Transistors
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2N3703
360mW
com/2n3703
2N3703
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Untitled
Abstract: No abstract text available
Text: 2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor
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2N3703
300mA.
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2N3703
Abstract: transistor 2N3703 2N3703 transistor
Text: 2N3703 2N3703 PNP General Purpose Amplifier • This device designed for use as general purpose amplifier and switches requiring collector currents to 300mA. • Sourced from Process 66. TO-92 1 1. Emitter 2. Collector 3. Base PNP Epitaxial Silicon Transistor
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2N3703
300mA.
2N3703
transistor 2N3703
2N3703 transistor
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2n3703
Abstract: No abstract text available
Text: Qzn&tij aSttnL-ConcLuitoi ZPtoeLata* TELEPHONE: 973 376-2882 203TERNAVE. SPRINGFIELD, NEW JERSEY 07081 (212) 227-6008 USA FAX: (973) 3764880 2N3703 P-N-P SILICON TRANSISTOR *CASE OUTLINE ALl °'MENSI°NS ir> 1 *' —•- INCHES F -*- ~— 0-015 (NOTE A)
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203TERNAVE.
2N3703
t0010-Â
2n3703
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2n3702
Abstract: 2N3703 transistor 2N3703 data sheet 2N3702
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX 5,33 5,20
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ISO/TS16949
2N3702
2N3703
C-120
2n3702
2N3703
transistor 2N3703
data sheet 2N3702
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2N3702
Abstract: 2N3703
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX
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2N3702
2N3703
C-120
2N3702
2N3703
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2N3702
Abstract: 2N3703
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN 4,32 4,45 3,18 0,41 0,35 5 DEG 1,14 1,14 12,70 1.982 MAX
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2N3702
2N3703
C-120
2N3702
2N3703
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2N3703
Abstract: No abstract text available
Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer TO-92 Plastic Package 2N3702 2N3703 PNP SILICON PLANAR EPITAXIAL TRANSISTORS B EC DIM A B C D E F G H K L MIN
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2N3702
2N3703
C-120
2N3703
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transistor 2N3703
Abstract: 2N3703 CBVK741B019 F63TNR PN200 PN2222N
Text: 2N3703 E TO-92 CB PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N3703
PN200
transistor 2N3703
2N3703
CBVK741B019
F63TNR
PN2222N
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2n2712 data sheet
Abstract: 2N3711 equivalent 2N3904 2n4058 2N2926 2N3393 2N3859A equivalent to PNP 2N2712 2N2714 2N2923
Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) (mA) NF toff 2N2712 NPN AMPL/SWITCH ECB MIN 18 - - - - 2N2714 NPN AMPL/SWITCH ECB 18 18 5.0
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2N2712
2N2714
2N2923
2N2924
2N2925
2N4289
2N4400
2n2712 data sheet
2N3711 equivalent
2N3904
2n4058
2N2926
2N3393
2N3859A equivalent to PNP
2N2712
2N2714
2N2923
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PDF
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2N4058
Abstract: 2N2712 2N2714 2N2923 2N2924 2N2925 2N2926 2N3391A 2N3392 2N3393
Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V ECB MIN 18 (V) *VCES MIN 18 (V) ICBO @ VCB (nA) (V) MAX 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff
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2N2712
2N2714
2N2923
2N2924
2N4264
2N4287
2N4289
2N4400
2N4058
2N2712
2N2714
2N2923
2N2924
2N2925
2N2926
2N3391A
2N3392
2N3393
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TO92 30v 800ma
Abstract: 180NS
Text: MOE T> " imiiirr i i V- n‘ T flS flW QQ032fil 3 BERHM ~~ ~F27-0 • P N P Transistors T O -92) General Purpose Small Signal Amplifiers Package BVceo (Fig. 1)' Min. TO-92 2N3702 (ECB) 40V MPS3702 (EBC) TO-92 2N3703 (ECB) 50V MPS3703 (EBC) TO-92 2N3058
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OCR Scan
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QQ032fil
2N3702
MPS3702
2N3703
MPS3703
2N3058
RN4058
2N40S9
RN4059
2N4060
TO92 30v 800ma
180NS
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PDF
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NPN pnp MATCHED PAIRS 2n2905A 2N2219A
Abstract: BFR39 BFR80 BFR40 BS9300 BFR81 BC326 BFR79 TIS90 BFR62
Text: Silect Polarity General Purpose Transistors — Ic up to 800 mA Case Outlines Device Type case outline in brackets 2N3702 2N3703 2N3704 2N3705 2N3706 (1) (1) (1) (1) (1) TIS90 (1) TIS91 (1) PTOT Maximum ratings CEO V Cont IC A pk IC A Free Air @ 25‘C mW
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OCR Scan
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BS9365
2N4036
2N4037
BS3365
2N4030
2N4031
NPN pnp MATCHED PAIRS 2n2905A 2N2219A
BFR39
BFR80
BFR40
BS9300
BFR81
BC326
BFR79
TIS90
BFR62
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2N3706
Abstract: 2N3702 2N3703 2N3704 3n3703 A6T3 km 3702 A8T3703
Text: 3 5 g -7 2 ./ I l Z S •“H '* * « . . * A . ' SEMELAB TYPES 2N3702, 2N3703 P-N -P SILICON TRANSISTORS For Complementary U m with 2N3704 thru 2N3706 M ECHANICAL DATA TD-92 D EVIC E 1 E m ttta r 2N 370Z. 2N 3703 LE AOS 2 C ollector 3 Bm ABSOLUTE M A X IM U M RATINGS
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OCR Scan
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2N3702,
2N3703
2N3704
2N3706
2N3702.
2N3702
2N3703
AST3702
A8T3703
2N3706
3n3703
A6T3
km 3702
A8T3703
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60V PNP TO-92
Abstract: 500ma 40v pnp
Text: Transistors • TO-92 Package/PNP Type For General Purpose Small Sig nal Am plifiers Part No. Package BVceo Min. 2N3703 TO-92 EC8 50V BVceo BV ebo Min. Min. 30V 5V '“ ° @VC0 . h? . @IC & VCE Min. Max. Max. 100nA 20V 30 150 50mA 5V VcE(sat) Max. VBE(sat)
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OCR Scan
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2N3703
100nA
100MHz
200mA
2N5087
40MHz
MPSA70
RJE9015C
60V PNP TO-92
500ma 40v pnp
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PDF
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2N3703
Abstract: A8T3702 2N3703 Texas 2N3702
Text: TYPES 2N3702, 2N3703, A8T3702, A8T3703 P-N-P SILICON TRANSISTORS B U L L E T IN N O . D L -S 7 3 1 1 7 7 2 , J A N U A R Y 1973 S IL E C T t T R A N S IS T O R S t • For Medium-Power Amplifiers, Class B Audio Outputs, Hi-Fi Drivers • Also Available in Pin-Circle Versions . . . 2N 5447, 2N 5448
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OCR Scan
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2N3702,
2N3703,
A8T3702,
A8T3703
2IM3704
IL-STD-202CR
2N3703
A8T3702
2N3703 Texas
2N3702
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2N4249
Abstract: 2N4288 2n4058 2N4289 2N4971 2N3702 2N3703 2N3905 2N3906 2N4059
Text: TO-92 Plastic Package Transistors PNP Maximum Ratings Type No. CBO CEO ^EBO Pd Min @Tc=25°c (V) (V) (V) Min Min Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) (W) ICBO (A) ^CB ^ces ^ ce m @(v) (jA) Max Max h FE @ 6 (V) Min 'c * (mA)
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OCR Scan
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2N3702
O-92-1
2N3703
2N3905
2N4964
2N4965
2N4971
2N4249
2N4288
2n4058
2N4289
2N3906
2N4059
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PDF
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2N4291
Abstract: 2N5447 MMBT3638 MMBT3638A MMBT4916 2N4290 pn917 2N5221 BCW29 BCW30
Text: NATL SEMICOND DISCRETE 52E D • bSQUBQ 27~ òI 003777k' □ ■ PNP General Purpose Transistors by Ascending Vceo Part Type Vcep(V) VcboOO Min Min . HfB Min Max (m A /V ) Ft (MHz) Min 50 50 30 50 200 200 600 120 500/1.0 350/1.0 50/10 10/1.0 60 60 100 850
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OCR Scan
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0D3777t
r-27-Ã
MPS6562
MPS6563
2N5221
MMBT5771
O-236
2N4290
BCW29
2N4291
2N5447
MMBT3638
MMBT3638A
MMBT4916
pn917
BCW30
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Untitled
Abstract: No abstract text available
Text: TO-92 Plastic Package Transistors PNP Maxim um Ratings Type No. Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Pd ^CBO ^CEO ^EBO (W) (A) (V) (V) (V) Min Min Min @Tc=25°c ^CES ^CE I'Ve @ (V) (PA) @ (V) Min Max Max Max IcBO m lc * (mA)
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OCR Scan
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2N3702
O-92-1
2N3703
2N3905
2N4402
2N4403
2N4964
2N4965
2N4971
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PDF
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2N4288
Abstract: 2N4249 2N4059 2N4289 2N4291 2N4971 2N3702 2N3703 2N3905 2N3906
Text: TO-92 Plastic Package Transistors PNP Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Maximum Ratings Type No. ^cao (V) Min ^CEO ^EBO (V) Min M Min 'c Pd (W) (A) Tc=25°c Max 'cBO m ^CB ®(V) 'c e s m Max ^CE »FE 9 « « Min 'c & (mA)
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OCR Scan
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2N3702
O-92-1
2N3703
2N3905
2N3906
2N4291
2N4402
2N4288
2N4249
2N4059
2N4289
2N4971
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PDF
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2SK2540
Abstract: 2SD2576 2sd2396 TA143E 2SK2459N 2SD 92 M C2N3904 2SB1569A 2SD2061 2SD1189F
Text: Transistors/^ Leaded Type Quick Reference MOS FET V d ss V 60 100 200 250 300 450 500 600 800 Page b (A) 2 2SK2262 (MRT) 2SK2294 (TO -220FN ) 3 2SK2792 (T 0 -2 2 0 F N ) 4 2SK2459N (TO -220FN ) 5 2SK2460N (T 0-220FN ) 2SK2713 (T 0 -2 2 0 F N ) 2SK2793 (T 0 -2 2 0 F N )
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OCR Scan
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2SK2262
2SK2294
-220FN
2SK2792
2SK2459N
2SK2460N
0-220FN
2SK2713
2SK2793
2SK2540
2SD2576
2sd2396
TA143E
2SK2459N
2SD 92 M
C2N3904
2SB1569A
2SD2061
2SD1189F
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PDF
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MMST8598
Abstract: "Die No." st5101
Text: DIE NO. PNP Small Signal TRANSISTOR Dili No. IMAXIMUM RATINGS T a= 25°C Free Air Symbol Value Unit Collector-Emitter Voltage VcEO 40 V Collector-Base Voltage VcBO 50 V Emitter-Base Voltage V ebo 5 V Collector Current Continuous Ic Parameter A -3 2 •I DESCRIPTION
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OCR Scan
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MPS-A70
375mW
100//A
100mA
MMST8598
"Die No."
st5101
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PDF
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n3904
Abstract: 2N3706 2N4289 "low noise" npn QDD2421 2n4287
Text: Small Signal Transistors TO-92 Case TO-92 TYPE NO. FAMILY LEAD CODE VCBO v CEO v EBO •CBO ä V c B C nA (V) (V) (V) (V) '■c e s *VCES *'CEV MIN MIN MIN MAX vCE © l c v C E (S i L T ) 'C c ob h FE (V) (mA) (V) (mA) ‘hfe(1 kHZ) MIN MAX NF ‘off
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OCR Scan
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2n2712
2n2714
2n2923
2n2924
2n2925
2n2926
2n4125
2n4126
2n4264
2n4287
n3904
2N3706
2N4289
"low noise" npn
QDD2421
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PDF
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Untitled
Abstract: No abstract text available
Text: Small Signal Transistors TO-92 Case TO-92 TYPE MO. FAMILY UEAD CODE II•FE VC 8 0 v CEO VS0O *CBO * V (V) (V) W MM •V ce s MM MM *>CES *C6V MAX evcE M VCE(5A D *c c Ob <mA} 00 (mA) ’hfgftlcHZ) NM MAX ♦r NF *off m {MHz) (dB) *^rb MAX TYP MM MAX MAX
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OCR Scan
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2N2712
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PDF
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