2N3772 JAN Search Results

2N3772

Abstract: 2N3771 2N3771 power circuit adc ic
Contextual Info: TECHNICAL DATA 2N3771 JANTX, JTXV 2N3772 JANTX, JTXV MIL-PRF QPL DEVICES Processed per MIL-PRF-19500/413 NPN HIGH-POWER SILICON TRANSISTORS MAXIMUM RATINGS Ratings Symbol 2N3771 2N3772 Units 40 50 7.0 7.5 30 60 100 7.0 5.0 20 Vdc Vdc Vdc Adc Adc W W Collector-Emitter Voltage

2N3772

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 518 Devices Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

2N3771

Abstract: 2N3772 2n377 2N3771 power circuit transistor 2n3772
Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices Qualified Level 2N3771 JANTX JANTXV 2N3772 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current

Contextual Info: 2N3772+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3772+JAN Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N5314

Abstract: 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
Contextual Info: A P I EL ECT RONI CS 00^3592 A P I I NC 2b ELECTRONICS d F | d D 4 3 S cIS □□□Q E3S INC 26C & l~ °~ T :- '3 3 - 0 { 00235 COLLECTOR CURRENT = 20 AMPS NPN TYPES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772 JAN

Contextual Info: 2N3772+JANTXV Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2N1936

Abstract: 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598
Contextual Info: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772

AP1152

Abstract: 2N4211 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597
Contextual Info: A P I ELECTRONICS 00^3592 A P I I NC ' at ELECTRONICS dF § D D 4 3 S cIS INC 26C □□□05BS ñ l~ V ~ T '~ ‘3 3 - 0 i 00235 CO LLECTO R CURRENT = 20 AM PS NPN TY PES Device No 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N3237 2N3597 2N3598 2N3599 2N3772

complement of 2N3053

Abstract: BDY29 2N6259 2N4314 BDY37 2N6259 amplifier 40375 40411 2n6259 general 2n377
Contextual Info: 2N3771 F A M IL Y [n-p-n] silicon f j = 0.8 MHz min; P j up to 250 W max DESCRIPTION h FE VCEO,su,) V CER(susl V c e v *“* V V V 2N TYPES 2N6257 2N 3771* 2N3772* BDY29 High-Current, High-Current, High-Current, High-Current, General General General General

diode cc 3053

Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
Contextual Info: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 January 2009. MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,

diode cc 3053

Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Contextual Info: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

Jan2N3055

Contextual Info: Ú j i l ELECTRO N ICS, IN C . COLLECTOR CURRENT = VCEO sus Volts Device No Cáse VCBO Volts Ve BO Volts 2N3055 JAN 2N3055 JTX 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 TO-3 TO-3 100 100

Contextual Info: Ìl S U ELECTR O NICS, IN C . 17 COLLECTOR CURRENT = 15 AMPS NPN TYPES v CBO VCEO sus Volts Volts Device No Case 2N3055 JAN 2N3055 JT X 2N3055 2N3235 2N3236 2N3238 2N3239 2N3240 2N3667 2N5412 2N5881 2N5882 2N6253 2N6254 2N6470 2N6471 2N6472 2N6496 T O -3

RCA 2N3055 transistor

Abstract: 2N3442 RCA transistor BF 257 2N3055 RCA rca 2n3771 2N3772 RCA rca 2n3055 2N4348 RCA 2n3055r rca transistor
Contextual Info: APPLICATION INFORMATION . Power Types for Electrostatic Deflection and Video Output Power Types [N-P-N & P-N-P] as Pass Transistors for Series Regulator Service Peak Output Voi tage V Pass Transistor Conditions 10 to 60 Bandwidth > 1MHz Regulator Output Current (1 ) — A

2N3055 RCA

Abstract: RCA 40852 transistor RCA 41013 2N3772 RCA 2N3442 RCA RCA 2N3055 transistor TX2N3440 BU106 transistor BF 257 RCA H 410
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . fy to 20 M H z . . . P t to 175 W •c pm k - lc = 1 0 A Py T .V . Application = 75 •100W Switching 130 x 130 1 3 0 x 130 BU 106 2N 5840 [N-P-N] 2N 5240 [N-P-N] BU 106 Va o sus =l40V hFE.:8 ;"0) / 4 A

2N3238

Abstract: 2N3239 2N3055 JAN 2N3240 2N3667
Contextual Info: COLLECTOR CURRENT = v CBO VcEO sus Volts Volts 100 60 100 70 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-61 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 TO-3 100 65 90 80 80 160 50 80 60 80 55 100 50 70 90 150 70 55 90 80 80 160 50 60 60 80 45 80 40 60 80 110 hiFE Ve BO

472 M

Abstract: MIL-S-19500 2N3055 JANTX
Contextual Info: Summary List of API Q.P.L. Directory Types 2N2812 - JAN, JAN-TX, JAN-TXV 2N2814 - JAN, JAN-TX, JAN-TXV M IL-S-19500/415 MIL-S-19500/415 2N2880 - JAN. JAN-TX, JAN-TXV 2N3749 - JAN. JAN-TX, JAN-TXV M IL-S-19500/315 MIL-S-19500/315 2N3055 - JAN. JAN-TX, JAN-TXV

mil-s-19500

Abstract: 2N2814
Contextual Info: S U M M A R Y LIST O F API Q .P.L. DIRECTORY TYPES 2 2N2812 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415 2N2814 - JAN, JAN-TX, JA N -T X V .MIL-S-19500/415

BDX33C darlington pair

Abstract: 40349 transistor BDY29 2N3773 transistor 2N3055 RCA 528 2n3771 2N3772 RCA RCA transistor 2n3055 RCA 40250
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V c E to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES <e “ 1.6 A max. P T " 8.76 W max. ITO-39J* le a 1 .S A max. PT - 8.7S W m u . TO-391* A i t . AAi 9U X 9U lc » 3.S A max. P y « 10 W max. (TO-391* lc * 4 A max. Pt - GO W max.

rca 40410

Abstract: rca 40362 transistor 40410 RCA transistor 40410 RCA transistor 40406 40410 RCA 40319 40362 RCA 2N5295 2N5296 RCA
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C to 30 A . . •c pm k - 12 A lc = 10A Py =7 5 •100W Switching Linear 130 x 130 130 x 130 1 3 0 x 130 BU106 2N5840 [N-P-N] 2N 52 40 [N-P-N] BU106 2N5838 Va o sus =l40V VCER(sus) =275 V hFE = 20min. hFE.:8 ;" 0) /

2N6179

Abstract: POWER TRANSISTORS 10A 400v pnp BU106 2N3055 RCA 2N2102 BUX17 BUX18 RCA 2N3055 transistor transistor BDX 65 2N5240
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER T Y PE S 1C t o 3 0 A . . •c pm k - 12 A lc = 10A Py = 7 5 • 100W Switching Linear 130 x 130 130 x 1 3 0 1 3 0 x 130 BU 106 2N 5840 [N -P -N ] 2N 5240 [N -P -N ] BU 106 2N 5838 Va o sus =l40V VCER(sus) = 275 V hFE = 2 0 m in .

sdt9303

Abstract: 2n3441 2N3441 JAN 2N3772 SOLITRON
Contextual Info: S0LITR0NDEVICES INC 8 3 6 8 6 0 2 SOL ITRON D E V I C E S DEI fl3bflL,D2 00057ÖBS i» INC 95D 02 78 2 T ' 3 3 - o / 3 P 1 is [^ [D y Tr ©Æ\TFÆ\[L@ J fw ’MDevices, trm Inc. SINGLE DIFFUSED l\IPI\l M E S A TRANSISTORS © ¿mw> M\PM DEVICE TYPE hpE @

RCA 40250 transistor

Abstract: audio amplifier with rca 410 Transistor rca 40250 RCA 40622 transistor RCA H 410 2n3772 complement RCA 40250 2n3441 complement RCA 2N3055 transistor 40629 Transistor
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415