2N5458
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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Original
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M1MA151/2KT1
inch/3000
M1MA151/2KT3
inch/10
M1MA151KT1
M1MA152KT1
M1MA152KT1
Volta218A
MSC1621T1
2N5458
BC237
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF0202PLT1
ENHANCE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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FET 2N5458
Abstract: BC547 fet BC237 TO261AA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT107T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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Original
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MMFT107218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
FET 2N5458
BC547 fet
BC237
TO261AA
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Common Anode Silicon Dual Switching Diode DAP222 This Common Anode Silicon Epitaxial Planar Dual Diode is designed for use in ultra high speed switching applications. This device is housed in the SOT–416/SC–90 package which is designed for low power surface mount applications, where board
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Original
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416/SC
DAP222
A218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
BC237
|
PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF0202PLT1
ENHANCE218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
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PDF
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MSC2404
Abstract: MPF3821 BC237 MPS8093 BCY72 MMBF4856 MAD130P MPS3866 bcy71 ALTERNATIVE BSS72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP RF Amplifier Transistor Surface Mount MSA1022-CT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage VCBO – 30 Vdc Collector–Emitter Voltage
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Original
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MSA1022-CT1
Emitte218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MPF3821
BC237
MPS8093
BCY72
MMBF4856
MAD130P
MPS3866
bcy71 ALTERNATIVE
BSS72
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PDF
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BF245
Abstract: BC237 MSC2404 mps8093 bf244 MSA1022 MSC2295-BT1 msc2295 MAD1107P MPS6568
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN RF Amplifier Transistors Surface Mount COLLECTOR 3 MSC2295-BT1 MSC2295-CT1 Motorola Preferred Devices 3 2 BASE 1 EMITTER 2 1 MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 30
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Original
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MSC2295-BT1
MSC2295-CT1
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF245
BC237
mps8093
bf244
MSA1022
msc2295
MAD1107P
MPS6568
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PDF
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stencil
Abstract: BC237 automatic heat detector project report BC393 equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54T1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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Original
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BAT54T1
Ju218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
stencil
BC237
automatic heat detector project report
BC393 equivalent
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PDF
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transistor marking lv3
Abstract: BC237 2n2222 transistor pin b c e
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diodes BAT54LT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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Original
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BAT54LT1
236AB)
abo218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
transistor marking lv3
BC237
2n2222 transistor pin b c e
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PDF
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2N3819
Abstract: BC237 BCY72
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2SC4617 Preliminary Information NPN Silicon General Purpose Amplifier Transistor NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS SURFACE MOUNT This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SOT-416/SC–90 package which is designed for
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Original
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OT-416/SC
7-inch/3000
2SC4617
SURFAC218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
2N3819
BC237
BCY72
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PDF
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diode l 0607
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diode This Silicon Epitaxial Planar Diode is designed for use in ultra high speed switching applications. This device is housed in the SC–70 package which is designed for low power surface mount applications.
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Original
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M1MA141/2KT1
inch/3000
M1MA141/2KT3
inch/10
M1MA141KT1
M1MA142KT1
70/SOT
M1MA142KT1
MSC1621T1
diode l 0607
BC237
|
PDF
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BC237
Abstract: BC238B MOTOROLA
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor Surface Mount PZTA42T1 Motorola Preferred Device NPN Silicon COLLECTOR 2,4 SOT–223 PACKAGE NPN SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT BASE 1 EMITTER 3 MAXIMUM RATINGS 4 Rating Symbol Value
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Original
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PZTA42T1
318E-04,
O-261AA
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
BC238B MOTOROLA
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PDF
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BC237
Abstract: 31 MOSFET sot-323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF0201NLT1
Mo218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
31 MOSFET sot-323
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBF2202PT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s
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Original
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MMBF2202PT1
70/SOT
Spa218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
|
PDF
|
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j305 replacement
Abstract: BC237 mps2907 replacement BC109C replacement
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBV3102LT1 Silicon Tuning Diode Motorola Preferred Device This device is designed in the Surface Mount package for general frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical
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Original
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MMBV3102LT1
236AB)
t218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
j305 replacement
BC237
mps2907 replacement
BC109C replacement
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PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Schottky Barrier Diode BAT54WT1 These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for hand held and
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Original
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BAT54WT1
D218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
|
PDF
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BC237
Abstract: diode H5
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Switching Diode MMSD914T1 The switching diode has the following features: Motorola Preferred Device • SOD–123 Surface Mount Package • High Breakdown Voltage • Fast Speed Switching Time 1 Cathode 2 2 Anode 1 CASE 425–04, STYLE 1
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Original
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MMSD914T1
Ambient218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
diode H5
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PDF
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BF256
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High
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Original
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BSS84LT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BF256
BC237
|
PDF
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BC237
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Low Voltage Output Amplifier Surface Mount MSD1328-RT1 Motorola Preferred Device COLLECTOR 3 3 2 1 2 BASE 1 EMITTER MAXIMUM RATINGS TA = 25°C Rating Symbol Value Unit Collector–Base Voltage V(BR)CBO 25 Vdc Collector–Emitter Voltage
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Original
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MSD1328-RT1
Colle218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
BC237
|
PDF
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BC237
Abstract: 6 21 X2 marking code sot 323
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Single Silicon Switching Diodes These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed switching applications. These devices are housed in the SC–59 package which is designed for low power surface mount applications.
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Original
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M1MA151/2AT1
inch/3000
M1MA151/2AT3
inch/10
M1MA151AT1
M1MA152AT1
M1MA152AT1
MSC1621T1
MSC2404
BC237
6 21 X2 marking code sot 323
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PDF
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MMFT6661T1
Abstract: 72v6 BC237 2N3819 fet BC309B DL 3 Y SOT-223 msc2295 ucl 82
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMFT6661T1 Medium Power Field Effect Transistor Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS SOT–223 for Surface Mount This TMOS medium power field effect transistor is designed for high speed, low loss power switching applications such as
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Original
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Tap218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
MV1644
MMFT6661T1
72v6
BC237
2N3819 fet
BC309B
DL 3 Y SOT-223
msc2295
ucl 82
|
PDF
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K 2056 transistor
Abstract: BC237
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BSS84LT1 Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the Greenline Portfolio of devices with energy–conserving traits. These miniature surface mount MOSFETs utilize Motorola’s High
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Original
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BSS84LT1
T218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
MV1642
K 2056 transistor
BC237
|
PDF
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2N3819 NATIONAL SEMICONDUCTOR
Abstract: National 2N3819 2n3819 surface mount 2n5951 2N5245 N CHANNEL JFET 2N3819 2N5953 2n4416 national MMBFJ305
Text: bflE D • bSDllBO □ D 3 cm ci,:i SS7 INSCS NATL SEMICOND DISCRETE TO -52 N Channel DG VP@VDSID m BVqsj Device (V) Min (V) Min Max 2N3819 25 2N4416 30 2.5 im 8 15 2 6 15 RelYfsl NF Re(Yos) Clss Crss (dB)@Rg = 1k (mmho) @ f (limho) @ f Package (PF) (PF)
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OCR Scan
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2N3819
2N4416
PN4416
MMBF4416
2N5245
2N5246
2N5247
2N5397
2N5484
MMBF5484
2N3819 NATIONAL SEMICONDUCTOR
National 2N3819
2n3819 surface mount
2n5951
N CHANNEL JFET 2N3819
2N5953
2n4416 national
MMBFJ305
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PDF
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2N3819 NATIONAL SEMICONDUCTOR
Abstract: National 2N3819 2n3819 surface mount 2N5247 MMBFJ304 MMBFJ305 N CHANNEL JFET 2N3819 2N5951 PN4416 2N5246
Text: bflE D • bSD113D □Q3cm cn 5S7 NSCS NATL SEMICOND DISCRETE TO -52 N Channel DG V p @ V DslB D ¥ GSS Device m (V) Min (V) Min Max 2N3819 25 RelYfsl Re(Yos) (mmho) @ f (nmho) @ f im Ciss Crss (PF) (PF) Max Max Min (MHz) Max (MHz) 8 15 2 1.6 100 NF (dB)@ Rg = 1k
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OCR Scan
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bSD113D
D3I14ci,
2N3819
T0-92
2N4416
PN4416
MMBF4416
O-236*
2N5245
2N3819 NATIONAL SEMICONDUCTOR
National 2N3819
2n3819 surface mount
2N5247
MMBFJ304
MMBFJ305
N CHANNEL JFET 2N3819
2N5951
2N5246
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PDF
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