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    2N3906V

    Abstract: marking za
    Text: SEMICONDUCTOR 2N3906V MARKING SPECIFICATION VSM PACKAGE 1. Marking method Laser Marking 2. Marking ZA No. 2007. 5. 17 Item Marking Description Device Mark ZA 2N3906V hFE Grade - - Revision No : 0 1/1


    Original     		PDF 2N3906V 2N3906V marking za

    2N3906V

    Abstract: 2N3904V
    Text: SEMICONDUCTOR 2N3906V TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=-50nA Max. , IBL=-50nA(Max.) @VCE=-30V, VEB=-3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3906V -50nA -50mA, 2N3904V. x10-4 -10mA, -10mA -50mA 2N3906V 2N3904V

    2N3906V

    Abstract: 2N3904V 1N916
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current G A 1 H @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 3 K Excellent DC Current Gain Linearity.


    Original     		PDF 2N3904V 2N3906V. 100mA 2N3906V 2N3904V 1N916

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E B FEATURES Low Leakage Current H G A @VCE=30V, VEB=3V. D 2 : ICEX=50nA Max. , IBL=50nA(Max.) 1 3 K Excellent DC Current Gain Linearity.


    Original     		PDF 2N3904V 2N3906V. 100mA

    khb*9D5N20P

    Abstract: khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E khb*9D5N20P khb9d0n90n 6v Zener diode khb*2D0N60P transistor KHB7D0N65F BC557 transistor kia*278R33PI KHB9D0N90N circuit ktd998 transistor

    KIA78*pI

    Abstract: transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P
    Text: KEC 2N2904E Transistor KEC BC859 Transistor KEC F1B2CCI FRD KEC KDS135S Diode KEC 2N2906E Transistor KEC BC860 Transistor KEC KAC3301QN Intergrated Circuit KEC KDS160 Diode KEC 2N3904 Transistor KEC BCV71 Transistor KEC KDB2151E Diode KEC KDS160E Diode KEC


    Original     		PDF 2N2904E BC859 KDS135S 2N2906E BC860 KAC3301QN KDS160 2N3904 BCV71 KDB2151E KIA78*pI transistor KIA78*p TRANSISTOR 2N3904 khb*9D5N20P khb9d0n90n KID65004AF TRANSISTOR mosfet KIA7812API khb*2D0N60P

    2N3906V

    Abstract: 2N3904V
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3904V 2N3906V. x10-4 100mA Width300 2N3906V 2N3904V

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR 2N3904V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ・Low Leakage Current : ICEX=50nA Max. , IBL=50nA(Max.) @VCE=30V, VEB=3V. ・Excellent DC Current Gain Linearity. ・Low Saturation Voltage


    Original     		PDF 2N3904V 2N3906V. x10-4