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    Abstract: No abstract text available
    Text: MOS LSI TMS 4003 JR. TMS 4003 NC 258-BIT RANDOM-ACCESS MEMORY 09 x FOR MEMORY APPLICATIONS REQUIRING HIGH-SPEED READ/W RITE C AP A BILITY c > 3 < • Nondestructive readout • Static operation • System access time under 200 ns • Low power dissipation


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    258-BIT 2N3C14 135G144A 2N3014 2N3829 PDF