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    2N4123 NPN TRANSISTOR Search Results

    2N4123 NPN TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N4123 NPN TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4124G

    Abstract: 2N4123 2N4123RLRM 2N4124
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage


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    PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4124G 2N4123 2N4123RLRM 2N4124

    2N4124

    Abstract: 2N4123 2N4124G 2N4123RLRM
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Collector−Emitter Voltage Collector−Base Voltage Symbol 2N4123 2N4124 2N4123 2N4124 Emitter−Base Voltage VCEO VCBO


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    PDF 2N4123, 2N4124 2N4123 2N4124 2N4123 2N4124G 2N4123RLRM

    Untitled

    Abstract: No abstract text available
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage 2N4123 2N4124 Collector−Base Voltage 2N4123 2N4124 Emitter−Base Voltage


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    PDF 2N4123, 2N4124 2N4123 2N4123/D

    2N4123

    Abstract: 2N4123RLRM 2N4124 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value VCEO 2N4123 2N4124 Collector−Base Voltage Vdc 30 25 VCBO 2N4123


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    PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4123RLRM 2N4124 2N4124G

    2n4123

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


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    PDF 2N4123/D 2N4123 2N4124 2N4124 226AA) 2N4123/D*

    2N4124 MOTOROLA

    Abstract: 2N4123 MOTOROLA 2N4124 2N4123
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


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    PDF 2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 MOTOROLA 2N4123 MOTOROLA 2N4124

    2N4123

    Abstract: 2N4124 2N4123 MOTOROLA
    Text: MOTOROLA Order this document by 2N4123/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage


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    PDF 2N4123/D 2N4123 2N4124 2N4123 226AA) 2N4123/D* 2N4124 2N4123 MOTOROLA

    2n4123 transistor

    Abstract: 1n916 fairchild
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


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    PDF 2N4123 2n4123 transistor 1n916 fairchild

    1N916

    Abstract: 2N4123 CBVK741B019 F63TNR PN2222N
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


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    PDF 2N4123 1N916 2N4123 CBVK741B019 F63TNR PN2222N

    Untitled

    Abstract: No abstract text available
    Text: 2N4123 [ [ ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] ] 2N4123 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 100 mA. Absolute Maximum Ratings*


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    PDF 2N4123 O-92-3 2N4123

    2N4123

    Abstract: 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G
    Text: 2N4123, 2N4124 General Purpose Transistors NPN Silicon http://onsemi.com Features • Pb−Free Packages are Available* COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector−Emitter Voltage Value Unit VCEO 2N4123 2N4124 Collector−Base Voltage 30 25 VCBO


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    PDF 2N4123, 2N4124 2N4123 2N4123/D 2N4123 2N4124 2N4123RLRM 2N4123RLRMG 2N4124G

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors 2N4123 2N4124 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N4123 2N4124 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 40


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    PDF 2N4123 2N4124 2N4124 226AA)

    2N4124

    Abstract: 2n4123 2n4123 npn transistor
    Text: 2N4123 2N4124 NPN SILICON PLANAR EPITAXIAL TRANSISTOR ÌN /1 IG R C D GENERAL DESCRIPTION ; The 2N4123 and 2N4124 are NPN silic o n planar e p ita x ia l tra n s is to rs designed for general purpose sw itching and am plifier a p p licatio n s. 2N4123 and 2N4124 are


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    PDF 2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 310mW 2n4123 npn transistor

    2N4123

    Abstract: 2n4124 2n4123 npn transistor
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: V ceo * 2N4123:30V 2N4124:25V • Collector Dissipation: Pc max »625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA-2 5 t:) C haracteristic Collector-Base Voltage


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    PDF 2N4123/4124 2N4123 2N4124 625mW 2N3904 2n4123 npn transistor

    Untitled

    Abstract: No abstract text available
    Text: 2N4123/4124 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR • Collector-Em itter Voltage: Vceo = 2N4123: 30V 2N4124: 25V • C ollector Dissipation: P c max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Voltage :2N 4123


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    PDF 2N4123/4124 2N4123: 2N4124: 625mW 2N4124 2N3904 10OKHz

    Untitled

    Abstract: No abstract text available
    Text: 45E » • SDTTESD 0017752 ft ■ T O S H TOSHIBA TRANSISTOR_ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ SILICON NPN EPITAXIAL TYPE PCT PROCESS TOSHIBA 2N4123 ~3'-l $ (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES:


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    PDF 2N4123 2N4125 100MHz

    2N4123

    Abstract: 2N4124 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4125 2N4126 2n4123 pnp
    Text: 2N 4123 2N4124 NPN SILICO N IV IIC R O PLANAR EPITAX IA L E L -E G T R O IX H C S GENERAL DESCRIPTION ; The 2N4123 and 2N4124 a re NPN s ilic o n p la n ar e p ita x ia l tr a n s is to r s designed fo r g en e ral purpose sw itching and a m p lifie r a p p lic a tio n s . 2N4123 and 2N4124 a re


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    PDF 2N4123 2N4124 2N4124 2N4125 2N4126. O-92A 2N4123 2n4123 npn transistor 2N4123 pnp silicon 2n4125 transistor 2N412 2N4126 2n4123 pnp

    2n4125 equivalent

    Abstract: 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent 2N3903 2N3904 n4401 2N3906 2N4123 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N5089 equivalent 2n4123 equivalent 2N3905 Equivalent n4401

    2N3906 JEDEC

    Abstract: 2N3906 hie 2N3906 2N3905 Equivalent 2n3906 equivalent 2n3906 npn 2N3903 2N3904 2N3905 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2N3906 JEDEC 2N3906 hie 2N3905 Equivalent 2n3906 equivalent 2n3906 npn

    2N5089 equivalent

    Abstract: D39C4 GES5307 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sat E b v C EO Type @ 10m A -(V) Min. Max. @ l c (mA) V c e (V) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 GES5305, 2N5089 equivalent D39C4 GES5307

    2N5225

    Abstract: 2N5219 JEDEC 2N3904 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device V C E sa t E b v CEO Type @ 10mA-(V) Min. Max. @ lc (mA) V ce (V ) Max. @ lc(m A ) 2N3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 100mA, 2N5225 2N5219 JEDEC 2N3904

    2n3904 418

    Abstract: 2N3905 Equivalent 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PA CK A GE V C E sa t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n3904 418 2N3905 Equivalent

    n3906

    Abstract: transistor ZTX302 MPS3693 945 MOTHERBOARD CIRCUIT diagram MPS3710 ZTX108 BCY59P MPS3704 MPS3705 MPS6532
    Text: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f


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    PDF MPS3704\ ZTX3704 MPS3705 ZTX3705 MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 n3906 transistor ZTX302 945 MOTHERBOARD CIRCUIT diagram MPS3710 ZTX108 MPS3704

    2n4125 equivalent

    Abstract: 2N3904 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 2N3903 2N3905 NPN+2n3904 2N4123
    Text: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE V C E s a t E b v CEO Device Type @ 1 0 m A -(V) Min. Max. @ l c (mA) 2N 3903 2N3904 2N3905 2N3906 2N4123 NPN NPN PNP PNP NPN 40 40 40 40 30 50 100 50 100 50 150 300 150 300 150 2N 4 1 24


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    PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4400 2n4125 equivalent 2N3905 Equivalent JEDEC 2N3904 2N3904 RN h 2n3904 NPN+2n3904