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    2N4430 Search Results

    2N4430 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4430 SunLED USA silicon transistors UHF/VHF power transistors Original PDF
    2N4430 Ferranti Semiconductors Shortform Data Book 1971 Short Form PDF
    2N4430 Microsemi RF & Microwave Power Transistors Scan PDF
    2N4430 Motorola Motorola Semiconductor Datasheet Library Scan PDF
    2N4430 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N4430 Unknown Shortform Electronic Component Datasheets Short Form PDF
    2N4430 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N4430 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4430 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N4430 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    2N4430 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4430 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    2N4430 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N4430 Semitronics VHF/UHF Power Transistors / Diffused Base MESA Transistors Scan PDF
    2N4430 Solidev Semiconductors Solid State Products (Transistor Guide) Scan PDF
    2N4430 STMicroelectronics Shortform Data Book 1988 Short Form PDF
    2N4430 Texas Instruments The Power Semiconductor Data Book 1974 Scan PDF
    2N4430 Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    2N4430 Transistor International Transistor Selection Guide Scan PDF

    2N4430 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4041

    Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4041 2N4127 2N5016 2N5102 2N5108 2N5421

    SRK-2001

    Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
    Text: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108


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    PDF 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 SRK-2001 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 solitron transistors 2N5016

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Text: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    PDF 2N2876 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 MRF660 MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


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    PDF MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417

    2n4889

    Abstract: 2N4858 TEXAS 2N4418 2sa777 2n4891 2N4917 2SA8150 6ae diode 2N4417 2N6556
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M


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    2N4858 TEXAS

    Abstract: 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560
    Text: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt


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    PDF O-126 O-126var 2S8549 2S8527 2S8528 2S81217 KSA931 2N3468 2S8733 2N4858 TEXAS 2N4872 SIEMENS 5SN 2N4433 Qualidyne 2N4418 transtek 40391 RCA 2N4417 api 560

    MT59

    Abstract: 2N4428 MT 59 2N4429 2N4430 THOMSON-CSF MICROWAVE TRANSISTORS MT-59
    Text: S G S — T H OMS ON 05C D SOLID STATE MICROWAVE 2N4428 2N4430 THOMSONCSF COMPONENTS CORPORATION 2N4429 2N4431 Montgomeryville, PA 18936" 215 362-8500 • TW X 510-661-7299 .75 W/1 W/2,5 W/5 W, 28 V, UHF PO W ER T R A N S IS T O R DESCRIPTION: This family o f single chip silicon transistors was designed for reliable


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    PDF 2N4428 2N4430 2N4429 2N4431 2N4431 2N4430 400mA 750mW MT59 MT 59 THOMSON-CSF MICROWAVE TRANSISTORS MT-59

    2N4430

    Abstract: OAC5807 OAC5808 OAC5809 OAC5811 QAC5810
    Text: OPTEK TECHNOLOGY INC 4flE D bVTflSAO 0001 4D 3 Mfc.0 • OTK OPTEK Product Bulletin OAC5807 March 1990 T-03 -0 5 Extra Fast Recovery Rectifier Die OAC58Q7 - OAC5811 Series OAC5807-OAC5811 Series Dimensions In inches .068 ± .003 Die Thickness .010 ± .002


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    PDF OAC5807 OAC58Q7 OAC5811 2N4430 OAC5807 OAC5808 OAC5809 QAC5810

    2N4430

    Abstract: OAC5802 OAC5803 OAC5804 OAC5805 OAC5806
    Text: OPTEK T E C H NO LO GY INC i^asan 4SE D §>\ OPTEK anom ai • Product Bulletin OAC5802 March 1990 otk -T -o î-o iî Extra Fast Recovery Rectifier Die OAC58Q2 - OAC58Q6 Series Contact metallization for wire bond and surface mount package construction: Top Metal: Alloy Aluminum Anode)


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    PDF OAC5802 OAC58Q2 OAC58Q6 OAC5802-OAC5806 2N4430 OAC5803 OAC5804 OAC5805 OAC5806

    2N4430

    Abstract: AC5000 OAC3000 OAC5000
    Text: O PT E K TECHNOLOGY INC MñE D • LTTÔSÛÜ OOOmGS 23G ■ OTK fcHjOPTEK Product Bulletin OAC3000 V -X * “T *0 March 1990 3' Extra Fast Recovery Rectifier Die OAC3000/OAC5000 Series • Contact metallization for wire bond and surface mount package construction:


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    PDF k71S5aG OAC3000 AC3000/O AC5000 OAC3000 OAC5000 2N4430

    rf power transistors

    Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
    Text: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60


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    PDF 2N5645 MT-72 2N4440 2N5636 MT-71 N4040 O-117 2N5774 O-129 2N3733 rf power transistors TO129 SC2600 2N5646 MT-72 package 2N5924

    OPTEK INC

    Abstract: 2N4430 OAC5807 OAC5808 OAC5809 OAC5810 OAC5811
    Text: OPTEK TECHNOLOGY INC 4flE D tVTasaa D 0 Q m 0 3 Mb fi • OTK OPTEK Product Bulletin OAC5807 March 1990 T-OVO"S Extra Fast Recovery Rectifier Die OAC58Q7 - OAC5811 Series OAC5807-OAC5811 Series Dimensions In inches .068 ± .003 Die Thickness .010 ± .002 Features


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    PDF D0Qm03 OAC5807 OAC58Q7 OAC5811 OPTEK INC 2N4430 OAC5807 OAC5808 OAC5809 OAC5810

    2N4431

    Abstract: 2N4429 LC 117A 2N4430 4431 4431 8 PIN LC+117A SD1170 2N4430C TO-117a
    Text: H JtS'nan'n* - * n ! IV I IC m S e m i P ro g re s s P o w e re d b y T e c h no log y 140 Commerce Drive Montgomeryvme, PA 18936 Tel: 215 631-9840 2N4429 4431 RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES


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    PDF 2N4429 2N4431 2N4430 2N4429 O-117A S882M4 VJ-02 2N4429) LC 117A 4431 4431 8 PIN LC+117A SD1170 2N4430C TO-117a

    AC5000

    Abstract: 2N4430 OAC3000 l718580
    Text: OPTEK TECHNOLOGY INC MñE D • L^TúSflO 00014GS 230 ■ OTK fl>flOPTEK Product Bulletin OAC3000 March 1990 V -X * *T*0 3 ' 0 $ Extra Fast Recovery Rectifier Die OAC3Q00/OAC5000 Series • Contact metallization for wire bond and surface mount package construction:


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    PDF L718580 OAC3000 AC3000/O AC5000 OAC3000 OAC5000X 2N4430

    BFS98

    Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
    Text: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0


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    PDF BFS96 BFS97 BFS98 -150t BFS59-61 ZTX510 BSV33 BFS36 2N930 BFS37 2N2475 2N4127 ZT180 ZT181 ZT182 ZT183

    2N4430

    Abstract: OAC6620 OAC6621 OAC6622 OAC6623 OAC6624 OAC6625 D 042 silicon rectifier diode
    Text: OPTEK TECHNOLOGY INC 4ÛE D • L7Tfl5flO G 0 D 1 4 G 7 00 3 ■ OTK u ritK Product Bulletin OAC6620 March 1990 _ T -03'05 Extra Fast Recovery Rectifier Die OAC662Q - OAC6625 Series • Contact metallization for wire bond and surface mount package construction:


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    PDF OAC6620 OAC6625 OAC6620-OAC6625 2N4430 OAC6621 OAC6622 OAC6623 OAC6624 D 042 silicon rectifier diode

    tq-60

    Abstract: No abstract text available
    Text: xemitron semiconductors SemitronicsCorp. m discrete devices 4 0 ^ 5 4 1 , DDDQSTl 7 I r - 3 1 'ô l s ilic o n tr a n s is to rs I N T E X / SEMITRONICS CORP 27E D yH F/VH F power transistors Pwar Out e e P|E MHz (W) e v CE 65 65 65 65 40 40 40 40 4.0 4.0


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    PDF 2N3563 W3632 2N37S3 2N9552N955A 2N963 2N964A -2N96S' I2N374 2N994 2N2482; tq-60

    4431 8 PIN

    Abstract: 2N4430 2N4429 2N4431 2NS4429 to-117a
    Text: li _n_Mm ra. m 140 Commerce Drive m lC rU S & n il Jet: Montgomeryvilie, PA 18936 215 631-9840 2N4429 -> 4431 s P&msfsxf ò y TaeR rtoissy RF & MICROWAVE POWER TRANSISTORS MICROWAVE POWER TRANSISTORS FOR CLASS C APPLICATIONS FEATURES HIGH POWER GAIN 2N4431


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    PDF 2N4429 2N4431 2N4430 2NS4429 O-117A 1000MHz, --300mW 75rnW 2N4431 4431 8 PIN 2N4430 2NS4429 to-117a

    80 Amp current 100 volt diode

    Abstract: No abstract text available
    Text: OPTEK T E C H N O L O G Y INC 4flE D • bVTflSöD 0 0 0 1 S 5 3 T74 ■ OTK Product Bulletin OPTEK M ay 1989 Surface Mount Extra Fast Recovery Rectifiers Types HCR3400/HCR31000 Series 2 25 5 71 2 15 (5 46) * 061(1 55) .155(3.93) .1 4 5 3 68 ■ z % PIN 1 IN D E N T IF IE R


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    PDF HCR3400/HCR31000 MIL-S-19500 80 Amp current 100 volt diode

    2N4430

    Abstract: OAC6626 OAC6627 OAC6628 OAC6629 OAC6631
    Text: OPTEK TECHNOLOGY INC MAE D • t7iaSÛD 00014m Tôt, ■ OTK \ ^ n v / r I H-ix Product Bulletin OAC6626 March 1990 0 'S - 0 3 Extra Fast Recovery Rectifier Die OAC6626 - OAC6631 Series OAC6626-OAC6631 Series Dimensions In inches .068 ± .003 Die Thickness


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    PDF 00014m OAC6626 OAC6631 2N4430 OAC6627 OAC6628 OAC6629

    TO1C

    Abstract: 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642 2N3866
    Text: discrete devices SEMICONDUCTORS j e m it r o n • Semitronics Corp. silicon transistors T '31'û l 4äbTS4b 00002^1 7 I INTEX/ SE MITRONICS CORP 27E D UHF/VHF power transistors 7 ~ - 3 7 - o / NPN type -7H ÌÌK 65 « V CE 5.ÍÍÍ3553 6b :'*K3 6« 65 ZN3T33 65


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    PDF 2K337S 2K3632 2N3733 T0-60 TQ-60 2N3866 N3924 2N392B -2N3927 2N401Ã TO1C 2N2188 IN404 2N2482 IN392 2N4040/A 2N994 INTEX 2NB642

    0TK7-03-0S

    Abstract: 2N4430 OAC5615 OAC5617 OAC5619 OAC5621 OAC5623
    Text: OPTEK TECHNOLOGY INC 4ÖE D • L.7TÖSÖ0 OOOIBTT 107 ■ OTK Ol OPTEK Product Bulletin OAC5615 March 1990 ''T '* 0 3 - O S ' Fast Recovery Rectifier Die OAC5615 - OAC5623 Series Features • Contact metallization for wire bond and surface mount package construction:


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    PDF 00013TT OAC5615 OAC5623 OAC5615-OAC5623 0TK7-03-0S 2N4430 OAC5617 OAC5619 OAC5621

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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    PDF