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    2N4986 Search Results

    2N4986 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N4986 General Electric Semiconductor Data Book 1971 Scan PDF
    2N4986 General Electric Semiconductor Data Handbook 1977 Scan PDF
    2N4986 Unknown Short Form Datasheet and Cross Reference Data Short Form PDF
    2N4986 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N4986 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N49861 Unknown Semiconductor Devices, Diode, and SCR Datasheet Catalog Scan PDF

    2N4986 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    GE 2N6027

    Abstract: 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062


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    2N4947 2N4948 2N4949 2N4986 2N4993 2N5060 2N5061 2N5062 2N5063 2N5064 GE 2N6027 2N5258 2SF128 2N5257 2N60758 2N6151 TIC236B 2n60758 motorola 02010LT 2N60738 PDF

    2N60758

    Abstract: 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062


    Original
    2N4947 2N4948 2N4949 2N4986 2N4993 2N5060 2N5061 2N5062 2N5063 2N5064 2N60758 2N60738 2n60758 motorola 2N60718 2SF120 2N60708 2SF126 2SF32A 2sf248 2N5257 PDF

    2N60738

    Abstract: 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC
    Text: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer 2N4947 Texas Instr 2N4948 Texas Instr 2N4949 Texas Instr 2N4986 2N4993 2N5060 Franel Corp Sid St Syst TAG Semi TexslnstLtd 2N5061 Franel Corp Precsn Semi SprgueElec Texas Instr Transltron 2N5062


    Original
    2N4947 2N4948 2N4949 2N4986 2N4993 2N5060 2N5061 2N5062 2N5063 2N5064 2N60738 2N60758 2N60718 2N6626 2N6140 2N6144 Motorola 2n5060 2SF120 ANSALDO MOTOROLA LSC PDF

    c 337 25

    Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
    Text: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3


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    3N84

    Abstract: 2N4988 RCA SCR 2n 2N4991 2N327 3N81 2N4984 IN4I48 3N85 40v neon lamp
    Text: SILICON U N I L A T E R A L AND B I L A T E R A L SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    2NM46 2N327 3N84 2N4988 RCA SCR 2n 2N4991 3N81 2N4984 IN4I48 3N85 40v neon lamp PDF

    2n2646 equivalent

    Abstract: SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â 2n4987 2N4990 2n4986 in5059 -2N4990 SUS-2N4986 2n2646 equivalent SUS-2N4986 IN5059 3N84 2N4987-90 SUS 2N4987 2N4987 equivalent ge motor capacitor cross reference equivalent transistor of 2n6027 CIRCUITS BY USING 2N6027 PDF

    2N4983

    Abstract: transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â S-2N4983 2N4986 2N4986 2N4963 2N4983 ---15V transistor 2N4983 general electric C22B CIRCUITS BY USING 2N6027 2n2646 equivalent GE C22B 2N4991 SBS thyristor 2N602B ge motor capacitor cross reference PDF

    four-layer diode

    Abstract: transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A
    Text: SPECIAL SILICON PRODUCTS REFERENCE AMPLIFIERS > V c« = 3 Volts, lc= 0.1 m A , lz= 5 m A , Rb= 1K 2 At Vc e = 3V, lc = .lm A SPECIAL SILICON PRODUCTS INTEGRATED VOLTAGE REGULATOR IVR D13V SERIES The D13V is a monolithic integrated voltage regulator circuit. Designed for use as a shunt voltage regulating ele­


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    2N4988 2N4989 2N4990 2N4983 2N4985 2N4986 2N4991 2N4992 2N4993 four-layer diode transistor 2N4983 2N4992 D13V1 2N4983 2N4990 2N4991 2N4985 2n4989 RA3A PDF

    2n2646 equivalent

    Abstract: 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2N489-494â 2N2646-47â 2n2646 equivalent 2N4991 2N4991 equivalent Silicon unilateral switch SBS thyristor 2n4991 2N2646 equivalent transistor of 2n6027 low voltage scr THYRISTOR A2f 2N4985 PDF

    JE1100

    Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466
    Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices


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    3N81

    Abstract: IN4148 anode cathode 2N4983 3N84 eto thyristor thyristor igc TRANSISTOR BO 344 2N4987 2N4985 thyristor eto
    Text: SILICON UNILATERAL AND BILATERAL SWITCHES SUS, SBS The General E le c tric S U S is a s ilic o n , planar m on olith ic integrated c irc u it having th yristo r e le ctrica l ch a ra cte ris tics clo se ly a pproxi­ m ating those of an '‘id ea l” fo u r-la yer diode. Th e d e vice is designed to sw itch at 8 vo lts w ith a typ ica l tem perature coefficient of


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    2N2646 equivalent

    Abstract: SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2N489-494â 2N2646-47â 2N4988 2N2647 022-/uF SUS-2N4989 2N4989 J2N2647 2N2646 equivalent SUS-2N4989 2N4988 2N4991 3N81 3n84 D5K2 20 amp 800 volt triac 2N4983 EQUIVALENT 2N1671 PDF

    2N4985

    Abstract: 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e th e intro du ctio n o f th e co m m ercial silic o n u n iju n c tio n tran sisto r in 1 9 5 6 , G eneral E le c tric has co n tin u e d d e­ velop ing an extensive lin e o f negative resistan ce th resho ld an d fo u r-lay er sw itch devices. Each o f th ese devices can


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    2N489-494â 2N2646-47â GEC32U 10kHz 2N4984 I2N2647 -2n4985 2N4985 2N2646 cross reference 2N4984 2n2646 equivalent 2N2646 2N4983 2N4991 GE SCR cross reference 2n4992 EQUIVALENT 2N1671 PDF

    MC2259

    Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
    Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the


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    2n2646 equivalent

    Abstract: 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    2N489-494â 2N2646-47â 2n2646 equivalent 2N2646 triac phase control 2N602B 2N4991 EQUIVALENT 2N1671 four-layer diode SBS thyristor 2N4987 3n84 PDF

    GE TRIAC SC40B

    Abstract: 2n4992 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES S in c e the introduction of the com m ercial s ilic o n unijunction tran sistor in 1956, General Ele ctric ha s continued de­ velop in g an extensive line of negative re sistan ce threshold and four-layer sw itch devices. E a ch of these devices can


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    2N489-494â 2N2646-47â 2N4992 SC40B GE TRIAC SC40B 3N84 SC40B transistor 2n4992 2N4992 equivalent 2n2646 equivalent triac 9012 SBS thyristor Triac 50 amp 250 volt PDF

    3N83

    Abstract: 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987
    Text: SILICON U NILATERAL AND BILATERAL SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    20/iS' /3N83 3N83 3N84 transistor 3N83 pin configuration NPN transistor 9012 PNP 40v neon lamp PNP Monolithic Transistor Pair transistor pnp 12V 1A Continuous Current Peak pin configuration NPN transistor 9012 npn nixie display 2N4987 PDF

    3n84

    Abstract: 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81
    Text: SILICON U N I L A T E R A L A N D B I L A T E R A L SWITCHES SUS, SBS The General Electric S U S is a silicon, planar monolithic integrated circuit having thyristor electrical characteristics closely approxi­ mating those of an '‘ideal” four-layer diode. The device is designed to switch at 8 volts with a typical temperature coefficient of


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    200fi? IN4I48 IN4I46 500PPS 3n84 2N4983 2N4985 SCR nomenclature, General electric 2n4990 scr 6A 2N4987 2N4984 GE 2N4992 3n81 PDF

    AC127

    Abstract: CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278
    Text: First Published P’ebruary, 1971 Reprinted, June 71 Reprinted, July 71 Reprinted, January 72 Reprinted, March 72 Reprinted, June 72 Reprinted, August 72 We invite all authors, whether new or well established, to submit manuscripts for pub­ lication. The manuscripts may deal with any


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    2N24A 2N34A 2N38A 2N43A 2N44A 2N59C 2N60A 2N61A 2N61B OC77-309, AC127 CV7089 AC125 2SB415 OC71 ad161 cv8615 HJ17D ad142 2N3278 PDF