2N5088BU
Abstract: No abstract text available
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2N5088BU
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2n5089 spice
Abstract: 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2n5089 spice
2N5088 Fairchild
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2N5088
Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
transistor 2N5088
2N5088 equivalent
2n5088 transistor
CBVK741B019
F63TNR
MMBT5089
PN2222N
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1r sot-23
Abstract: No abstract text available
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1mA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
1r sot-23
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TIC 1160
Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
TIC 1160
2N5088 equivalent
2n5088 transistor
CBVK741B019
F63TNR
MMBT5089
PN2222N
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2N5089
Abstract: 2N5088 equivalent 2n5088 transistor c 5088 2N5089 power 2N5088 MMBT5088 MMBT5089 4973P 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
2N5088 equivalent
2n5088 transistor
c 5088
2N5089 power
MMBT5089
4973P
2N5088 Fairchild
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2N5088 Fairchild
Abstract: No abstract text available
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5088
2N5089
MMBT5088
OT-23
2N5088 Fairchild
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2N5088 Cross Reference
Abstract: 2N5088 power 50-kV 2N5089 fairchild 2n5088 application note 2N5088 Fairchild
Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.
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2N5088
MMBT5088
2N5089
MMBT5089
2N5089
OT-23
2N5088 Cross Reference
2N5088 power
50-kV
2N5089 fairchild
2n5088 application note
2N5088 Fairchild
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2N5961
Abstract: 2N5088 CBVK741B019 F63TNR PN2222N
Text: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol
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2N5961
2N5088
Val60ue
2N5961
CBVK741B019
F63TNR
PN2222N
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2N5961
Abstract: 2N5088
Text: 2N5961 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol
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2N5961
2N5088
Val60ue
2N5961
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2n5210 equivalent
Abstract: 2n5210 2N5210 datasheet 2n5088 transistor 2N5088 2N5210 c
Text: 2N5210 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*
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2N5210
2N5088
2n5210 equivalent
2n5210
2N5210 datasheet
2n5088 transistor
2N5210 c
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2N5210
Abstract: No abstract text available
Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1mA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*
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2N5210
2N5088
2N5210
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PN930
Abstract: 2N5088 equivalent 2N5088
Text: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol
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PN930
2N5088
PN930
2N5088 equivalent
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2N5088
Abstract: CBVK741B019 F63TNR PN2222N PN930
Text: PN930 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* Symbol
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PN930
2N5088
CBVK741B019
F63TNR
PN2222N
PN930
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Untitled
Abstract: No abstract text available
Text: 2N5962 MMBT5962 C E C TO-92 BE B SOT-23 Mark: 117 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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2N5962
MMBT5962
OT-23
2N5088
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Untitled
Abstract: No abstract text available
Text: 2N5210 2N5210 C B TO-92 E NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings*
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2N5210
2N5088
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MPSA18
Abstract: 2n5088 transistor MPSA18C 2N5088 MPSA18 Fairchild
Text: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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MPSA18
2N5088
MPSA18
2n5088 transistor
MPSA18C
MPSA18 Fairchild
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MPSA18
Abstract: 2N5088 CBVK741B019 F63TNR PN2222N MPSA18C MPSA18 Fairchild
Text: MPSA18 C TO-92 BE NPN General Purpose Amplifier This device is designed for low noise, high gain, applications at collector currents from 1µ A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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MPSA18
2N5088
MPSA18
CBVK741B019
F63TNR
PN2222N
MPSA18C
MPSA18 Fairchild
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PN2484
Abstract: 2n5088 transistor 2N5088 equivalent npn general purpose high voltage amplifier 2N5088 MMBT2484
Text: PN2484 MMBT2484 C E C BE TO-92 SOT-23 B Mark: 1U NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µ to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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PN2484
MMBT2484
OT-23
2N5088
PN2484
2n5088 transistor
2N5088 equivalent
npn general purpose high voltage amplifier
MMBT2484
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PN930
Abstract: 2N5088
Text: SEMiCONDUCTQR PN930 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose applications at collector currents from 1pi to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Màximum RStinQS
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PN930
2N5088
PN930
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR • 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. Absolute Maximum RatinQS
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PDF
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2N5961
2N5088
al60u
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR ¡m 2N5961 NPN General Purpose Amplifier This device is designed for use as low noise, high gain, general purpose amplifiers requiring collector currents to 50 mA. Sourced from Process 07. See 2N5088 for characteristics. AbSOlUtG Maximum RâtinÇjS
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OCR Scan
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2N5961
2N5088
Val60ue
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Untitled
Abstract: No abstract text available
Text: S3 S£ M 'C IC IM O , , n T a n 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1pA to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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2N5210
2N5088
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2N5088
Abstract: 2N5210
Text: S E F ^ ^ C N D ; -E T ^ a rî 2N5210 NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose am plifier applications at collector currents from 1^A to 50 mA. Sourced from Process 07. See 2N5088 for characteristics.
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2N5210
2N5088
2N5210
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