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    2N5089 TRANSISTOR Search Results

    2N5089 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    2SC6026MFV Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold Visit Toshiba Electronic Devices & Storage Corporation
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation

    2N5089 TRANSISTOR Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5088

    Abstract: 2N5089
    Text: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage 2N5088 2N5089 Collector − Base Voltage 2N5088 2N5089 Emitter − Base Voltage


    Original     		2N5088, 2N5089 2N5088 PDF

    2N5089

    Abstract: No abstract text available
    Text: 2N5089 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5089 Availability Online Store


    Original     		2N5089 2N5089 STV3208 LM3909N LM3909 PDF

    2N5088 equivalent

    Abstract: 2N5088 2N5089
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


    Original     		ISO/TS16949 2N5088 2N5089 C-120 2N5088 equivalent 2N5088 2N5089 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS CASE T0-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS POR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. 1 EBC ABSOLUTE MAXIMUM RATINGS for


    OCR Scan     		2N5086 2N5088 2N5087 2N5089 T0-92A 2N5086, 2N5088; PDF

    2N5088

    Abstract: 2n5089
    Text: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous


    Original     		2N5088 2N5089 2N5089 226AA) PDF

    2N5088G

    Abstract: 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note
    Text: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR 2 BASE MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value Unit VCEO 2N5088 2N5089 Collector − Base Voltage Vdc VCBO


    Original     		2N5088, 2N5089 2N5088 2N5088/D 2N5088G 2N5088 equivalent 2n5088 transistor 2N5089 2n2089 2N2089RLRE 2N5088 2N5089G 2n5088 application note PDF

    2N5088 equivalent

    Abstract: 2n2089 2N5088G 2N5088 2n5088 transistor 2n5088 application note 2N2089RLRA 2N2089RLRAG 2N2089RLRE 2N2089RLREG
    Text: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 1 EMITTER


    Original     		2N5088, 2N5089 2N5088 2N5088/D 2N5088 equivalent 2n2089 2N5088G 2N5088 2n5088 transistor 2n5088 application note 2N2089RLRA 2N2089RLRAG 2N2089RLRE 2N2089RLREG PDF

    2N5089

    Abstract: No abstract text available
    Text: Transistors 2N5089 USHA INDIA LTD AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Vceo= TO-92 2N5089: 25V • Collector Dissipation: Pc (max)=625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Symbol Collector-Base Voltage VcBO Collector-Emitter Voltage


    OCR Scan     		2N5089 2N5089: 625mW 2N5089 PDF

    2N2089

    Abstract: 2N2089RLRAG 2n5088 application note 2N5088 equivalent 2n5088 transistor 2N2089RLRA 2N2089RLRE 2N2089RLREG 2N5088 2N5088RLRA
    Text: 2N5088, 2N5089 Amplifier Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Collector − Emitter Voltage Value VCEO 2N5088 2N5089 Collector − Base Voltage Vdc 30 25 VCBO 2N5088


    Original     		2N5088, 2N5089 2N5088 2N5088/D 2N2089 2N2089RLRAG 2n5088 application note 2N5088 equivalent 2n5088 transistor 2N2089RLRA 2N2089RLRE 2N2089RLREG 2N5088 2N5088RLRA PDF

    2N5089 equivalent

    Abstract: 2n5088 alternative transistor 2n5088 equivalent 0/2N5089 equivalent
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5088 2N5089 NPN Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector – Emitter Voltage VCEO 30 25 Vdc Collector – Base Voltage VCBO 35 30 Vdc


    Original     		2N5088 2N5089 2N5089 226AA) 2N5089 equivalent 2n5088 alternative transistor 2n5088 equivalent 0/2N5089 equivalent PDF

    2N5088 equivalent

    Abstract: 2N5088 2N5089
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


    Original     		2N5088 2N5089 C-120 2N5088 equivalent 2N5088 2N5089 PDF

    2N5088 equivalent

    Abstract: 2N5088 2n5088 transistor 2N5089
    Text: ON Semiconductort Amplifier Transistors 2N5088 2N5089 NPN Silicon MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit Collector–Emitter Voltage VCEO 30 25 Vdc Collector–Base Voltage VCBO 35 30 Vdc Emitter–Base Voltage VEBO 3.0 Vdc Collector Current — Continuous


    Original     		2N5088 2N5089 226AA) r14525 2N5088/D 2N5088 equivalent 2N5088 2n5088 transistor 2N5089 PDF

    2N5089

    Abstract: No abstract text available
    Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON EPITAXIAL TRANSISTORS E 2N5088 2N5089 TO-92 CBE BC Amplifier Transistors ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL 2N5088 2N5089 UNITS VCBO 35 30 V Collector -Base Voltage


    Original     		2N5088 2N5089 C-120 2N5089 PDF

    2N5081

    Abstract: transistor 2N5086 2N5086 2n508 2n5088 transistor 2N5087 2N5088 2N5089
    Text: 2N5086 2N5088 2N5087 2N5089 PNP , NPN SILICON AF LOW NOISE SMALL SIGNAL TRANSISTORS I CASE TO-92A THE 2N5086, 2N5087 PNP AND 2N5088; 2N5089 (NPN) ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR USE IN AF LOW NOISE PREAMPLIFIER CIRCUITS. IBC (PNP) ABSOLUTE MAXIMUM RATINGS


    OCR Scan     		2N5086 2N5087 2N5088 2N5089 2N5086, 2N5088; T0-92A 2N5086 2N5081 transistor 2N5086 2n508 2n5088 transistor 2N5087 2N5089 PDF

    TIC 1160

    Abstract: 2N5088 equivalent 2n5088 transistor 2N5088 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 TIC 1160 2N5088 equivalent 2n5088 transistor CBVK741B019 F63TNR MMBT5089 PN2222N PDF

    2N5088

    Abstract: transistor 2N5088 2N5088 equivalent 2n5088 transistor 2N5089 CBVK741B019 F63TNR MMBT5088 MMBT5089 PN2222N
    Text: 2N5088 / MMBT5088 / 2N5089 / MMBT5089 2N5088 2N5089 MMBT5088 MMBT5089 C E C B TO-92 SOT-23 E B Mark: 1Q / 1R NPN General Purpose Amplifier This device is designed for low noise, high gain, general purpose amplifier applications at collector currents from 1µA to 50 mA.


    Original     		2N5088 MMBT5088 2N5089 MMBT5089 2N5088 2N5089 MMBT5088 OT-23 transistor 2N5088 2N5088 equivalent 2n5088 transistor CBVK741B019 F63TNR MMBT5089 PN2222N PDF

    2N5089

    Abstract: No abstract text available
    Text: SMALL SIGNAL GENERAL PURPOSE TRANSISTORS 2N5089 NPN Epitaxial Silicon Transistors Features • Application for Amplifier Circuit, Switching Circuit, Inverter • RoHS Compliant Maximum Ratings T Ambient=25ºC unless noted otherwise Symbol Description Value


    Original     		2N5089 2N5089 PDF

    2N5088

    Abstract: 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent
    Text: 2N5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO= 2N5088: 30V 2N5089: 25V • Collector Dissipation: PC max =625mW ) ABSOLUTE MAXIMUM RATINGS (TA=25 Characteristic Collector-Base Voltage Collector-Emitter Voltage


    Original     		2N5088/5089 2N5088: 2N5089: 625mW 2N5088 2N5089 2N5088 2N5089 2N5088 equivalent 2n5088 transistor transistor 2N5088 2N5089 equivalent transistor amplifier 5v to 15v 5089 silicon npn transistor 2N4403 NPN Transistor transistor 2n5088 equivalent PDF

    mpsa18

    Abstract: 2N5088
    Text: 2N5088 2N5089 MAXIMUM RATINGS Rating Symbol 2N5088 2N5089 Unit C o lle c to r -E m itte r V o lta g e v CEO 30 25 Vdc C o lle c to r-B a s e V o lta g e v CBO 35 30 V dc 3.0 Vdc C o lle c to r C u rre n t — C o n tin u o u s •Emitter-Base V o lta g e >C


    OCR Scan     		2N5088 2N5089 2N5088 O-226AA) mpsa18 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONICTECHNOLOGIESCO., LTD 2N5088/2N5089 NPN EPITAXIAL SILICON TRANSISTOR N PN GEN ERAL PU RPOSE AM PLI FI ER ̈ DESCRI PT I ON The devices are designed for low noise, high gain, general purpose amplifier applications at collector currents from 1 A ~ 50mA.


    Original     		2N5088/2N5089 2N5088L-T92-B 2N5088G-T92-B 2N5088L-T92-K 2N5088G-T92-K 2N5088L-T92-R 2N5088G-T92-R 2N5089L-T92-B 2N5089G-T92-B 2N5089L-T92-K PDF

    2N5087

    Abstract: transistor 2N5086 2N5087 equivalent 2N5086 2n5088 transistor 2N5088 2N5089
    Text: ST 2N5086 / 2N5087 PNP Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the NPN transistor ST 2N5088 and ST 2N5089 are recommended.


    Original     		2N5086 2N5087 2N5088 2N5089 2N5087 transistor 2N5086 2N5087 equivalent 2n5088 transistor PDF

    2N5088 equivalent

    Abstract: ST transistor 2n5088 transistor 2N5086 2N5087 2N5088 2N5089 hfe 300
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		2N5088 2N5089 2N5086 2N5087 100Hz, 2N5088 equivalent ST transistor 2n5088 transistor 2N5087 2N5089 hfe 300 PDF

    2N5089 equivalent

    Abstract: 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 2N5086 2N5088
    Text: ST 2N5088 / 2N5089 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into one group according to it DC current gain. As complementary type the PNP transistor ST 2N5086 and ST 2N5087 are recommended.


    Original     		2N5088 2N5089 2N5086 2N5087 100Hz, 2N5089 equivalent 2N5088 equivalent ST transistor 2N5087 2N5089 2n5088 transistor transistor 2N5088 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N 5088/5089 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: = 2N5088: 3 0 V 2N5089: 25V • Collector Dissipation: Pc max =625mW V c eo ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Symbol Characteristic Collector-Base Voltage


    OCR Scan     		2N5088: 2N5089: 625mW 300ns, b4142 005SD33 2N5088/5089 PDF