2n5108

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2N5108 DESCRIPTION •High Current-Gain Bandwidth Product : fT= 1200MHz Min @VCE = 10V,IE = 50mA ·Low Saturation Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for general purpose Class C amplifier applications

2N5109

Abstract: 2C5109 2N5109UB SD5109 SD5109F SQ5109 SQ5109F
Contextual Info: Data Sheet No. 2C5109 Generic Packaged Parts: Chip Type 2C5109 Geometry 1007 Polarity NPN 2N5109 Chip type 2C5109 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N5109, 2N5109UB, SD5109, SD5109F, SQ5109, SQ5109F Product Summary:

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2n5105

Abstract: 2N5245 2N5485 2N5670 pin 2N3819 2N3821 2N3822 2N3823 2N4223 2N4224
Contextual Info: /ÄYM,© 1 ^©[nlÄMKlIlIL [FITP L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Case Type Style Humber (TO- Geometry 2N3819 72 2N3821» 72 2N3822» 72 2N3823« 72 2N4223 72 2N4224 72 72 2N4416 2N4416A 72 2N5078 72 2N5103 72 2N5104 72 72 2N5105

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

2N5109 motorola

Abstract: transistor 2N5109 c0851 2n5109
Contextual Info: 4b E D • h3b?2S4 OOcmOb b 1 ■ flOTb T -3 3 -n MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 2N5109 MOTOROLA SC XSTRS/R F The RF Line 1.2 GHz 50 mAdc HIGH FREQUENCY TRANSISTOR NPN SILICON HIGH-FREQUENCY TRANSISTOR NPN SILIC O N . . . designed specifically for broadband applications requiring good

2N5108

Contextual Info: I 4bE D L3b72S4 I OCmOfc.2 4 • M 0 ïb T : 3 3 " Û 5 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5108 MOTOROLA SC XSTRS/R F T h e R F L in e 1.0 W -1 GHz HIGH FREQUEN CY TRANSISTOR NPN SILIC O N NPN SILICON HIGH-FREQUENCY TRANSISTOR . . . designed for amplifier, frequency multiplier, or oscillator applica*

2N5103

Contextual Info: 2N5103 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A)30m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N5108

Contextual Info: i C/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz.

2N5109 SGS

Abstract: 2n5109 Max17550 transistor Z2
Contextual Info: 3QE » • 7^2=1237 Q 0 312E5 T ■ ' T i 2 \*Z'2 > r = 7 S G S -T H O M S O N ^ 7 # ^ a œ @ |L i O r a ô [ M D O i 2N5109 Y T ^ s - thom son EPITAXIAL PLANAR NPN C A T V U L T R A -L IN E A R HIGH G AIN T R A N ­ SISTO R The 2N5109 is a multi-emitter silicon planar epitaxial

Contextual Info: ¿888888888 p |M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data Sheet No. 2N5109 o % #f 1 l $ 1 I cI ^88888 id L SEM ICO N D U CTO RS Type 2N5109 G e n e r ic P a rt N u m b e r : 2N 5109 G eom etry 1 0 0 7 Polarity NPN Qual Level: JAN - JA NTXV

Contextual Info: 2N5109+JANTX Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelY V BR CEO (V)20 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)

Contextual Info: 2N5105 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A)30m I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

2N5109

Abstract: rca 2N5109 RCA-2N5109 TA2800 2n5109 rca CF-102-Q1 IN5109 transistor 2N5109 rca 0190 transistor field strength meter
Contextual Info: File No. 281 RF Power T ran sisto rs Solid State Division 2N5109 Silicon N-P-N Overlay Transistor High G ain fo r Line A m p lifie rs in C A T V and M A T V E q uip m en t Features: • High gairvbandwidth product ■ Large dynam ic range ■ Low distortion

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

Abstract: RF NPN POWER TRANSISTOR 1000 WATT 2N5109 TRANSISTOR 12 GHZ
Contextual Info: 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA • 1. Emitter 2. Base 3. Collector Maximum Unilateral Gain = 12dB typ @ 200 MHz TO-39 DESCRIPTION:

2N5109

Abstract: 19500/453 2N5109 JAN 2n5109 transistor transistor 2n5109
Contextual Info: Data Sheet No. 2N5109 Generic Part Number: 2N5109 Type 2N5109 Geometry 1007 Polarity NPN Qual Level: JAN - JANTXV REF: MIL-PRF-19500/453 Features: • VHF-UHF amplifier silicon transistor. • Housed in TO-39 case. • Also available in chip form using the 1007 chip geometry.

2n5108

Contextual Info: 2N5108 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION: The 2N5108 is a Designed for General Purpose Class C Amplifier Applications Up to 1 GHz. PACKAGE STYLE TO-39 FEATURES: • GPE = 6.0 dB Typ. at 1.0 GHz • FT = 1,500 MHz Typ. at 15 V/ 50 mA • Hermetic TO-39 Package

Contextual Info: 2N5108 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)55ãè V(BR)CBO (V)55 I(C) Max. (A)400m Absolute Max. Power Diss. (W)3.5 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5100 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)400 V(BR)CBO (V)450 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175’ I(CBO) Max. (A)5.0nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2n5109

Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
Contextual Info: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER

JANTX2N5109

Abstract: JANTX2N3735 23219 2n2107 jantx2n3866
Contextual Info: Microsemi NPN Transistors Part Number 2N5109 2N5109 2N5109 2N5109 2N3866A JAN2N3866A JANTX2N3866A JANTXV2N3866A 2N2106 2N2107 2N2108 2N3498 2N3499 JAN2N3498 JAN2N3499 JANTX2N3498 JANTX2N3499 JANTXV2N3498 JANTXV2N3499 2N2726 2N2727 2N4000 2N4001

2N5109

Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •

2N5109

Abstract: MRF227 FD700 100 uH Diode C3 uH33 C3 DIODE .47 uH
Contextual Info: 39 ohm +15 VDC 1 uf + RFC 1000 uh / Freq. in MHz L1 L2 10 ohm C1 Out Q1 13 dBm FD 700 1000 pf C2 C3 Freq. P out C1 C2 C3 L1 L2 Q1 RFC 30 MHz 30 dBm 150 pf 15 pf 39 pf 1.5 uh 1.2 uh 33 uh 2N5109 100 MHz 24 dBm 68 pf 10 pf none .82 uh .47 uh 10 uh 2N5109