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    2N5133 TRANSISTOR Search Results

    2N5133 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    2N5133 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    STk442-130

    Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
    Text: C52_pg_337~347 8/16/07 11:47 AM Page 337 Semiconductors/ Components SEMICONDUCTORS MCM has an extensive selection of SMD Surface Mount Devices which are denoted on the following page with an *(asterisk)! COUNT ON MCM TO ALWAYS PROVIDE. section 16 Semiconductors/Components


    Original     		100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 PDF

    Q2N4401

    Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
    Text: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog


    Original     		RD91EB Q2N4401 D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751 PDF

    TP107B

    Abstract: 2N5133 TP107A 2N3565 TP109B tp107 TP252A TP251B MPS-A13 pnp 2N5138
    Text: Q Q D f l O I I C EconolineR Plastic-Molded 0I KHV UC Silicon SEPT" Transistors SMALL-SIGNAL LOW NOISE AMPLIFIERS P O LA R IT Y Pd 25 C mW 2N3565 2N5133 2N5138 2N 5376 2N5377 2N5378 2N 5379 NPN NPN PNP NPN NPN PNP PNP 625 625 625 500 500 500 500 30 20 30


    OCR Scan     		2N3565 2N5133 2N5138 2N5377 2N5378 MPS5308A 2N5306 2N5306A 2N5307 2N5308 TP107B TP107A TP109B tp107 TP252A TP251B MPS-A13 pnp PDF

    2n5133 bc209

    Abstract: 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2 BC538-16
    Text: FAIRCHILD TRANSISTORS SMALL SIGNAL GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VqeO (Cont’d) (ALSO SEE LOW LEVEL AND HIGH VOLTAGE SECTION) NPN PNP 1 MPSA06 2 BC538-10 BC528-10 3 MPSA56 @ 'c VCE(aat) V @ lC Max mA mA M in/M ax C0 b


    OCR Scan     		MPSA06 MPSA56 BC538-10 BC528-10 2N4033 BC538-16 BC528-16 BC538-25 BC528-25 2N4410 2n5133 bc209 2N5133 BC208C BC209 BC528 noise BC209B BC209C 2N4033 N82C55A2 PDF

    2N5133

    Abstract: 2N5129
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No E lectrical C h aracteristics (Ta=25”C , U n le ss O therw ise Specified) *080 '•'Vi; !c-s Jcz (V) (MA) § (V) Vc m (V) Win (V) Min 2N5030 30 12 4 0.625 0.2 0 25 20 2N5088 35 30 5 0.625


    OCR Scan     		O-92-1 2N5030 2N5088 2NS219 2N5220 2N5223 2N5224 2NS225 2N5232 2N5232A 2N5133 2N5129 PDF

    2N5134

    Abstract: 2N5133 2N5129 2N5030 2N5136 2N4970 2N4967 2N4953 2N4954 2N4966
    Text: TO-92 Plastic Package Transistors NPN Electrical Ch ara cteristics (Ta=25°C, U n le ss O therw ise Specified) Maximum Ratings Type “CEO 'EBO No. (V) Min (V) Min 2N4953 2N4954 2N4966 40 50 @Tc=25“< Max 0.625 30 40 'cBO (ua) 0.625 30 60 Po m 0.625 0.6


    OCR Scan     		2N4953 2N4954 2N4966 2N4967 2N5130* 2N5133 2N5134 2N513S 2N5136 2N5137 2N5129 2N5030 2N4970 2N4967 PDF

    Untitled

    Abstract: No abstract text available
    Text: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO ^CEO (V) Min (V) Min Min 60 30 5 2N4953 2N4954 2N4966 40 50 30 40 ^EBO M 5 6 Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Po 'c <W) (A) @Tc=25“c 0.625 0.625 0.625


    OCR Scan     		2N4953 2N5135 2N5137 2N5136 PDF

    2N5133

    Abstract: 2N3565
    Text: This NPN Transistors NATL 2N929 Case Style TO-18 VCBO v CEO V ebo V (V) (V) Min Min Min 45 45 5 'CB0 VCB (nA)@ “ Max 11 10 hFE Min Max 45 350 By 60 40 2N929A TO-18 60 45 6 2 Its 60 40 25 45 45 5 10 45 600 150 100 TO-18 60 60 6 10 45 60 60 6 10 45 2N3246


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    E421 fet

    Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
    Text: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.


    OCR Scan     		O-72P* O-92X O-105 O-106 O-106P E421 fet equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet PDF

    bcs47

    Abstract: BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238
    Text: 1 < 3 2 1 DIM MIN MAX A 4,32 5,33 8 4,45 T 5,20 C 3,18 4,19 D 0,41 0,55 E 0,35 0,50 F 5 DEG G 1,14 H 1,14 1,53 K 12,70 - 1,40 ALL D IM EN SIO N S IN M M. Pin Configuration Available in TO-92 S JÜ - A A SEC ^ CDU. Code Style Pin 1 TO-92 Pin 2 Pin 3 Emitter


    OCR Scan     		O-92-1 O-92-2 O-92-3 O-92-4 PN5179 PN5449 PN5B16 PN7055 TIS87 bcs47 BCS48 BC170C 8C548 BF494 ph 06 BC170B BF494 ph 04 cd639 BCS48B bf238 PDF

    1.0 k mef 250

    Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
    Text: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a


    OCR Scan     		semi-820 BYX22-400 BYX22-600 BYX22-800 BYX26-60 YX26-150 BYX36-1 BYX36-300 1.0 k mef 250 ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072 PDF

    sx3704

    Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
    Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide


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    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


    OCR Scan     		11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680 PDF

    2n7588

    Abstract: P3139 BC233A sprague 40d GEX36/7 C4274 s1766 C12712 TC236 GP149
    Text: SPRAGUE THE M A R K O F R E L I A B I L I T Y SEMICONDUCTOR REPLACEMENT MANUAL K -5 0 0 TABLE OF CONTENTS Guidelines for Replacing Semiconductors. 1 Specifications, Small-Signal and Power Transistors.


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    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan     		500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 PDF

    2N2222A 338

    Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
    Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK


    OCR Scan     		2CY17 2CY18 2CY19 2CY20 2CY21 500MA 500MA 2N2222A 338 TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    1n813 fairchild

    Abstract: 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog
    Text: Fairchild Semiconductor Dab Cataloi 196! The Fairchild Semiconductor Data Cataloc — an all-inclusive volume of product infor mation covering diodes, transistors, digita and linear integrated circuits, MSI and LS devices from the world's largest suppliei


    OCR Scan     		BR-BR-0034-58 1n813 fairchild 2N3303 abb inverter manual acs 800 FD6666 diode 2N3137 UA703 equivalent FD200 diode 2N2369 AVALANCHE PULSE GENERATOR UA716 Fairchild dtl catalog PDF

    1N6227

    Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    LG color tv Circuit Diagram schematics

    Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


    OCR Scan     		3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 PDF

    AL102 ATES

    Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
    Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible


    OCR Scan     		Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 PDF

    LS 2027 audio amp

    Abstract: ECG transistor replacement guide book free 2sb337 TRANSISTOR REPLACEMENT GUIDE 980510 S9510 2sb508 C24850772 2N339 bc149c
    Text: TABLE OF CONTENTS Introduction. Page 2 How to Use This Book. Page 2 Care and Handling of T ran sisto rs. Page 3


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    hep 154 silicon diode

    Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
    Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes­ sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This


    OCR Scan     		MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


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