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Abstract: No abstract text available
Text: 2N5250+JANTX Transistors Si NPN Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)125 I(C) Max. (A)90 Absolute Max. Power Diss. (W)350 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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2N5250
Freq10M
time2000n
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2H2904
Abstract: 2NI483-86
Text: QPL DEVICES DEVICE TYPE JAN JANTX 2N389 2N424 2N1047A-50A 2N1479-82 2NI483-86 2N1478-90 2K1714-Ì7 2N1722 2N1724 2N2015.16 2H2812.14 2N2880 2N3418-21.S 2N3439.40.L 2N3506.Û7.L 2N3584.85 M 715J6 2N3739 2N3740,41 2N3749 2H 376Ï67 2N3846.47 2N3867.68.S 2N3879
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2N389
2N424
2N1047A-50A
2N1479-82
2NI483-86
2N1478-90
2K1714-
2N1722
2N1724
2N2015
2H2904
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TO63 package
Abstract: 2N5250 2N3265 transistor 114 2N5539 2N3150 2N3266 2N3847 2N4002 2N4003
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE DEVICE TYPE V ceo sus VOLTS Ic (max) AMPS 1*FE@ Ic/ V ce (min/max @ A/V) VcE(sat) @ I c/I b (V @ A/A) p“ d * WATTS Ìt (MHz) NPN TO-63 2N3265 90 20 25-55@15/2 l@20/2 100 20 2N3266 60 20 20-80@15/3
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2N3265
2N3266
2N3846
2N3847
2N4002
2N4003
2N5539
2N6046
2N6047
2N6048
TO63 package
2N5250
transistor 114
2N3150
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2N3265
Abstract: 2N5251 2N5250 2n3599 2N4865 2n4211 2N5250 JANTX t0114 2N6060 2n6278 to63
Text: A POW ERHOUSE BIPOLAR NPN PLANAR POW ER T R A N S IS T O R S TO-63 T0-114 •c VOLTS AMPS hFE min/max < < o m PEAK bvceo o DEVICE TYPE > PACKAGE VCE seti max VOLTS 'C A A 2N3265 90 20.0 25- 55 15.0/2.0 1.0 2 0 .0 /2.0 2N3266 60 20.0 20- 80 15.0/3.0 1.6
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2N3265
2N3266
2N3597
2N3598
2N3599
2N4002
2N4003
2N4210
2N4211
2N6060
2N5251
2N5250
2N4865
2N5250 JANTX
t0114
2n6278 to63
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TO63 package
Abstract: TRANSISTOR C 2570 TO114 package 2n3150 2N3265 transistor 2n4866 2N5251 2N5539 2N6048 2N5927 JAN
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-63 PACKAGE NPN TO-63 La Ì DEVICE TYPE d i A T * Tc = 100°C 1*FE@ Ic/ VcE min/max @ A/V VcE(sat) @ Ic^Ib (V @ A/A) p“ d* fr WATTS (MHz) 2N3265 90 20 25-55@15/2 1@20/2 100 20 2N3266 60 20 20-80@ 15/3
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2N3265
2N3266
2N3846
2N3847
2N4002
2N4003
2N5539
2N6046
2N6047
2N6048
TO63 package
TRANSISTOR C 2570
TO114 package
2n3150
transistor 2n4866
2N5251
2N5927 JAN
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NSP5665
Abstract: sat 1205
Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *
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2N1479
2N1480
2N1481
2N1482
2N1483
2N1484
2N1485
2N1486
O-254
NSP6340
NSP5665
sat 1205
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Text: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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