2N5401
Abstract: transistor 2N5401 1N914 2N5400
Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO
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2N5401*
2N5400
2N5401
226AA)
r14525
2N5401/D
2N5401
transistor 2N5401
1N914
2N5400
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2N5401 fairchild
Abstract: No abstract text available
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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2N5401
MMBT5401
2N5401
OT-23
2N5401 fairchild
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2N5401
Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2N5401 SOT-23
mark 2L SOT-23
RB103
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2N5401
Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1
Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
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2N5401
2N5400
2N5401/D
2N5401
2N54XX
transistor 2N5401
1N914
2N5401RL1
2N5401RLRA
2N5401RLRAG
2N5401RLRM
2N5401ZL1
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2N5401
Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage
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2N5400/D
2N5400
2N5401*
2N5400
2N5401
2N5400/D*
2N5401
motorola 1N914 diode datasheet
transistor 2N5401
1N914
2N5400 MOTOROLA
2N5401 MOTOROLA
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diode 2N5401
Abstract: 2N5400 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1
Text: 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
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2N5400,
2N5401
2N5400
2N5400/D
diode 2N5401
2N5401
transistor 2N5401
1N914
2N5400G
2N5400RLRP
2N5400RLRPG
2N5401G
2N5401RL1
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2N5401 SOT-23
Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401 SOT-23
2N5401 fairchild
transistor 2N5401
MMBT5401
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2N5401 fairchild
Abstract: 2N5401 SOT-23
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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2N5401
MMBT5401
2N5401
OT-23
OT-23
2N5401 fairchild
2N5401 SOT-23
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transistor 2N5401
Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA
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M3D186
2N5401
2N5551.
MAM280
SCA76
R75/04/pp6
transistor 2N5401
2N5401
2N5551
SC-43A
2n5401 transistor
of pnp transistor 2n5401
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2N5401
Abstract: 2N5401 motorola 2N5400 2N5401 TO-39
Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA 2N5400 2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage
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2N5400/D
2N5400
2N5401*
2N5401
226AA)
2N5400/D*
2N5401 motorola
2N5401 TO-39
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2n5401y
Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401YBU
2N5401RM
2N5401CH1TA
2n5401y
2N5401yc
2N5401 fairchild
2N5401-Y
2N5401C-Y
mark 2L SOT-23
transistor 2L 5401
5401 GM
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2N5401 fairchild
Abstract: transistor 2N5401 2N5401 2n5401 transistor
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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2N5401
625mW
2N5401 fairchild
transistor 2N5401
2N5401
2n5401 transistor
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2N5457
Abstract: No abstract text available
Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage
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2N5401
2N5400
2N5401
2N5457
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2N5401
Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA
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M3D186
2N5401
2N5551.
MAM280
SCA63
115002/00/03/pp8
2N5401
transistor 2N5401
diodes inc 2N5551
2N5551
BP317
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mark 2L SOT-23
Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401RA
2N5401BU
2N5401RM
2N5401TF
mark 2L SOT-23
MARKING W2 SOT23 TRANSISTOR
MARKING W3 SOT23 TRANSISTOR
2N5401B
5401 SOT-23
2N5401 fairchild
transistor marking code ne SOT-23
transistor 2N 5401
mark 2L SOT-23 6
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mark 2L SOT-23
Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
mark 2L SOT-23
2N5401 SOT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2n5401 transistor
MJE 350 PNP power transistor
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transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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2N5401
625mW
2N5401
O-92-3
2N5401BU
2N5401CTA
2N5401NLBU
2N5401TA
2N5401TAR
transistor 5401
2N5401 fairchild
5401 transistor
transistor 2N 5401
Transistor B C 458
2n5401 application
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Untitled
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
QW-R201-001
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2N5401
Abstract: 2n5401 application
Text: SEMICONDUCTOR 2N5401 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR GENERAL PURPOSE APPLICATION. HIGH VOLTAGE APPLICATION. B C A FEATURES ᴌHigh Collector Breakdwon Voltage : VCBO=-160V, VCEO=-150V N E K ᴌLow Leakage Current. : ICBO=-50nA Max. @VCB=-120V
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2N5401
-160V,
-150V
-50nA
-120V
-50mA,
-10mA,
100MHz
2N5401
2n5401 application
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Untitled
Abstract: No abstract text available
Text: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE
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2N5401
-150V
625mW
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2N5550 EBC
Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400
Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.
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2n5400,
2n5401
2n5550,
2n5551
T0-92A
2n5400
2n555q
2n5551
600mA
2N5550 EBC
2N5401
2N5400
5551
2N5550
T092A
N5400
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str g 5551
Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551
Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401
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2N5401
2N5401
115002/00/03/pp8
str g 5551
str G 5551 47
transistor cc 5551
transistor 2n5401
2n5401 philips
a/STR/LH/8/str g 5551
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sot23 t04
Abstract: mark t04 sot 2n5401 sot 23
Text: 2N5401 I MMBT5401 D iscrete POW ER & S ig n a l Technologies tß National Semiconductor" 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
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2N5401
MMBT5401
2N5401
OT-23
bS01130
00407Cn
LSD113D
sot23 t04
mark t04 sot
2n5401 sot 23
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LSC 132
Abstract: 2N5401 MMBT5401 357t
Text: 2N5401 I MMBT5401 <S> D is c r e te P O W E R & S i g n a l T e c h n o lo g ie s _ National Semiconductor"' 2N5401 MMBT5401 PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74.
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SQ1130
DD4D711
LSC 132
2N5401
MMBT5401
357t
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