2N5401 fairchild
Abstract: No abstract text available
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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2N5401
MMBT5401
2N5401
OT-23
2N5401 fairchild
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2N5401 fairchild
Abstract: transistor 2N5401 2N5401 2n5401 transistor
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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2N5401
625mW
2N5401 fairchild
transistor 2N5401
2N5401
2n5401 transistor
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2N5401
Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2N5401 SOT-23
mark 2L SOT-23
RB103
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transistor 5401
Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application
Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor
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2N5401
625mW
2N5401
O-92-3
2N5401BU
2N5401CTA
2N5401NLBU
2N5401TA
2N5401TAR
transistor 5401
2N5401 fairchild
5401 transistor
transistor 2N 5401
Transistor B C 458
2n5401 application
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2N5401 SOT-23
Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401 SOT-23
2N5401 fairchild
transistor 2N5401
MMBT5401
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PDF
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2N5401 fairchild
Abstract: 2N5401 SOT-23
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*
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2N5401
MMBT5401
2N5401
OT-23
OT-23
2N5401 fairchild
2N5401 SOT-23
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2n5401y
Abstract: 2N5401yc 2N5401 fairchild 2N5401-Y 2N5401C-Y mark 2L SOT-23 transistor 2L 5401 2N5401YBU 5401 GM
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401YBU
2N5401RM
2N5401CH1TA
2n5401y
2N5401yc
2N5401 fairchild
2N5401-Y
2N5401C-Y
mark 2L SOT-23
transistor 2L 5401
5401 GM
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mark 2L SOT-23
Abstract: MARKING W2 SOT23 TRANSISTOR MARKING W3 SOT23 TRANSISTOR 2N5401B 2N5401BU 5401 SOT-23 2N5401 fairchild transistor marking code ne SOT-23 transistor 2N 5401 mark 2L SOT-23 6
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
2N5401RA
2N5401BU
2N5401RM
2N5401TF
mark 2L SOT-23
MARKING W2 SOT23 TRANSISTOR
MARKING W3 SOT23 TRANSISTOR
2N5401B
5401 SOT-23
2N5401 fairchild
transistor marking code ne SOT-23
transistor 2N 5401
mark 2L SOT-23 6
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mark 2L SOT-23
Abstract: 2N5401 SOT-23 2N5401 CBVK741B019 F63TNR MMBT5401 PN2222N 2n5401 transistor MJE 350 PNP power transistor
Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
OT-23
mark 2L SOT-23
2N5401 SOT-23
CBVK741B019
F63TNR
MMBT5401
PN2222N
2n5401 transistor
MJE 350 PNP power transistor
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2N5401
Abstract: CBVK741B019 F63TNR MPSL51 PN2222N
Text: MPSL51 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSL51
2N5401
CBVK741B019
F63TNR
MPSL51
PN2222N
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2N5400
Abstract: 2N5401
Text: 2N5400 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5400
2N5401
2N5400
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MPS-L51
Abstract: MPSL51 2N5401
Text: MPSL51 C TO-92 BE PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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MPSL51
2N5401
MPS-L51
MPSL51
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2N5401 SOT-23
Abstract: mark 2L SOT-23 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401
Text: 2N5401 MMBT5401 C E C TO-92 BE SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
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2N5401
MMBT5401
OT-23
2N5401
2N5401 SOT-23
mark 2L SOT-23
2N5401 fairchild
transistor 2N5401
MMBT5401
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1N4548
Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A
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1N100
1N100A
1N101
1N102
1N103
1N104
1N108
1N111
1N112
1N113
1N4548
1N4008
Diode 1N4008
1N4008 diode
1N1744A
1n4148
1N523b
2N4418
BAX15
1n5428
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MOTOROLA 2N5179
Abstract: motorola 2N2219 motorola 2N2222A motorola mpq3904 MOTOROLA 2N2905A MJ3001 equivalent motorola 2N4427 motorola 2N2219A 2N3819 MOTOROLA motorola 2N3866
Text: Central Semiconductor - Cross Reference Competitor Discontinued Part Replacements EOL Part # Manufacturer Name Central Semi Part # A12FR10 International Rectifier CR20-010R A12FR100 International Rectifier CR20-100R A12FR120 International Rectifier CR20-120R
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A12FR10
CR20-010R
A12FR100
CR20-100R
A12FR120
CR20-120R
A12FR20
CR20-020R
A12FR40
CR20-040R
MOTOROLA 2N5179
motorola 2N2219
motorola 2N2222A
motorola mpq3904
MOTOROLA 2N2905A
MJ3001 equivalent
motorola 2N4427
motorola 2N2219A
2N3819 MOTOROLA
motorola 2N3866
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR -v 2N5400 . TO-92 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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2N5400
2N5401
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Untitled
Abstract: No abstract text available
Text: D iscrete POWER & S ig n a l Technologies F = A IR C H IL .O SEMICONDUCTOR MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics.
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MPSL51
2N5401
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MPSL5
Abstract: No abstract text available
Text: S E M IC O N D U C T O R MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and sw itches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol
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MPSL51
2N5401
MPSL5
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2N5401
Abstract: MPSL51
Text: SEMiCONDUCTQR MPSL51 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring high voltages. Sourced from Process 74. See 2N5401 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted
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MPSL51
2N5401
MPSL51
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Untitled
Abstract: No abstract text available
Text: S g M iS D r o U C roR :w 2N5401 MMBT5401 Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum RatinQS TA = 25°C unless otherwise noted
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2N5401
MMBT5401
2N5401
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2N5401 fairchild
Abstract: No abstract text available
Text: t JffS fe B Discrete POWER & Signal Technologies < : il S e ^ M IQ D N O Ü C T O R 2N5401 MMBT5401 SOT-23 B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose am plifier and switch for applications requiring high voltages. Sourced from Process 74.
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2N5401
MMBT5401
2N5401
OT-23
2N5401 fairchild
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SE4020
Abstract: fairchild to-106 EN2484 BC532 BCS20B high voltage npn to-92 BC530 BC520 2N3962 2N3965
Text: FAIRCHILD TRANSISTORS SMALL SIGNAL LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 4 ^FE VCEO V Min f»FE @ ic mA 180/- mA Min/Max 0.10
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PN4249
2N3965
BFX37
2N3962
2N5961
SE4020
O-106
2N2484
EN2484
SE4020
fairchild to-106
EN2484
BC532
BCS20B
high voltage npn to-92
BC530
BC520
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bc204
Abstract: 2N4248 2N4249 BC205 2N4250 BC204A BC204b fairchild semiconductors BC205A BC206b
Text: Sem iconductors Fairchild Sem iconductors Silicon Small Signal Transistors P N P Low Level, Low Noise Amplifier Transistors Plastic Package TOIOC, T 092 REFERENCE T A BLE Max Ratings Cod« BC204 BC204A BC204B BC205 BC205A BC205B BC206A BC206B BC206C BC320
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BC204
35349H
BC204A
35350X
BC204B
35351R
BC205
80/typ)
35352G
BC205A
2N4248
2N4249
2N4250
fairchild semiconductors
BC206b
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SE4020
Abstract: fairchild to-106 se7055 BFX37 BFY57 BC532 2N2484 PN4889 2N3965 EN2484
Text: FAIRCHILD TRANSISTORS S M A L L S IG N A L LOW LEVEL, LOW NOISE AMPLIFIER TRANSISTORS BY ASCENDING VCEO (Cont’d) Item DEVK: e n o . Pol arity NPN PNP 1 ^FE @ ic VCEO V Min Min/Max 60 100/300 PN4249 2 2N3965 60 3 BFX37 60 2N3962 f»FE mA 180/- mA Min/Max
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PN4249
2N3965
BFX37
2N3962
2N5961
SE4020
O-106
2N2484
EN2484
SE4020
fairchild to-106
se7055
BFY57
BC532
2N2484
PN4889
EN2484
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