2N5401 TRANSISTOR Search Results

2N5401 TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2N5401 TRANSISTOR Price and Stock

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Diotec Semiconductor AG 2N5401 Bipolar Transistor - TO-92 - 150V - 600mA - PNP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N5401		51,210			1 - 10 - 100 - 1000 - 10000 $0.0198	Buy Now
Taitron Components Inc 2N5401 PNP High Voltage Transistor - 150V - hFE=60-240/10mA - Vse(sat)<=0.5V/50mA - fT>=100MHz in TO-92 PKG.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N5401		7,946			1 - 10 - 100 - 1000 $0.0468 10000 $0.0401	Buy Now
Rectron Semiconductor 2N5401 Transistor, Power Rating - 0.625W, Polarity - PNP, DC Collector/Base Gain hfe Min - 60, DC Current Gain hFE Max - 300
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Onlinecomponents.com	2N5401					1 - 10 - 100 - 1000 $0.0577 10000 $0.0435	Buy Now

2N5401 TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N5401 Abstract: transistor 2N5401 1N914 2N5400 Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO	Original	2N5401* 2N5400 2N5401 226AA) r14525 2N5401/D 2N5401 transistor 2N5401 1N914 2N5400	PDF
2N5401 Abstract: 2N54XX transistor 2N5401 1N914 2N5400 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1 Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage	Original	2N5401 2N5400 2N5401/D 2N5401 2N54XX transistor 2N5401 1N914 2N5401RL1 2N5401RLRA 2N5401RLRAG 2N5401RLRM 2N5401ZL1	PDF
2N5401 Abstract: 2N5400 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage	Original	2N5400/D 2N5400 2N5401* 2N5400 2N5401 2N5400/D* 2N5401 motorola 1N914 diode datasheet transistor 2N5401 1N914 2N5400 MOTOROLA 2N5401 MOTOROLA	PDF
diode 2N5401 Abstract: 2N5400 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1 Text: 2N5400, 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage	Original	2N5400, 2N5401 2N5400 2N5400/D diode 2N5401 2N5401 transistor 2N5401 1N914 2N5400G 2N5400RLRP 2N5400RLRPG 2N5401G 2N5401RL1	PDF
C2N5401 Abstract: 2N5401 Text: ON Semiconductort 2N5401* Amplifier Transistors PNP Silicon *ON Semiconductor Preferred Device MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage VCEO 120 150 Vdc Collector–Base Voltage VCBO 130 160 Vdc Emitter–Base Voltage VEBO	Original	2N5400 2N5401 2N5401* 226AA) C2N5401	PDF
2N5401 Abstract: 2N5400 10D3 2N5550 2N5551 Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case	Original	2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551 2N5401 10D3 2N5551	PDF
Untitled Abstract: No abstract text available Text: 2N5400 / 2N5401 2N5400 / 2N5401 General purpose Si-Epitaxial PlanarTransistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2005-12-21 Power dissipation Verlustleistung 18 9 16 E BC 2 x 2.54 Dimensions / Maße [mm] 625 mW Plastic case	Original	2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551	PDF
Untitled Abstract: No abstract text available Text: 2N5400 / 2N5401 2N5400 / 2N5401 General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz PNP PNP Version 2006-06-17 Power dissipation Verlustleistung 18 9 16 CBE 2 x 2.54 Dimensions - Maße [mm] 625 mW Plastic case	Original	2N5400 2N5401 UL94V-0 2N5400 2N5550 2N5551	PDF
transistor 2N5401 Abstract: 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1999 Apr 08 2004 Oct 28 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA	Original	M3D186 2N5401 2N5551. MAM280 SCA76 R75/04/pp6 transistor 2N5401 2N5401 2N5551 SC-43A 2n5401 transistor of pnp transistor 2n5401	PDF
2N5401 Abstract: 2N5401 motorola 2N5400 2N5401 TO-39 Text: MOTOROLA Order this document by 2N5400/D SEMICONDUCTOR TECHNICAL DATA 2N5400 2N5401* Amplifier Transistors PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector–Emitter Voltage	Original	2N5400/D 2N5400 2N5401* 2N5401 226AA) 2N5400/D* 2N5401 motorola 2N5401 TO-39	PDF
2N5401 fairchild Abstract: transistor 2N5401 2N5401 2n5401 transistor Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 fairchild transistor 2N5401 2N5401 2n5401 transistor	PDF
2N5457 Abstract: No abstract text available Text: 2N5401 Preferred Device Amplifier Transistors PNP Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol 2N5400 2N5401 Unit Collector − Emitter Voltage VCEO 120 150 Vdc Collector − Base Voltage	Original	2N5401 2N5400 2N5401 2N5457	PDF
2N5401 Abstract: transistor 2N5401 diodes inc 2N5551 2N5551 BP317 Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2N5401 PNP high-voltage transistor Product specification Supersedes data of 1997 May 22 1999 Apr 08 Philips Semiconductors Product specification PNP high-voltage transistor 2N5401 FEATURES PINNING • Low current max. 300 mA	Original	M3D186 2N5401 2N5551. MAM280 SCA63 115002/00/03/pp8 2N5401 transistor 2N5401 diodes inc 2N5551 2N5551 BP317	PDF
transistor equivalent book 2N5401 Abstract: 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Symbol 2N5400 2N5401 Unit Collector – Emitter Voltage Rating VCEO 120 150 Vdc Collector – Base Voltage	Original	2N5400 2N5401* 2N5401 226AA) Resist218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent book 2N5401 2n5401 equivalent BC237 918 TRANSISTOR PNP bc547 collector base emitter 2n5401 148 2n5400 replacement 2n2222 2n5401 2n5551	PDF

transistor 5401 Abstract: 2N5401NLBU 2N5401 fairchild 5401 transistor transistor 2N 5401 2N5401BU Transistor B C 458 2n5401 application Text: 2N5401 2N5401 Amplifier Transistor • Collector-Emitter Voltage: VCEO= 150V • Collector Dissipation: PC max =625mW • Suffix “-C” means Conter Collector (1. Emitter 2. Collector 3. Base) TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor	Original	2N5401 625mW 2N5401 O-92-3 2N5401BU 2N5401CTA 2N5401NLBU 2N5401TA 2N5401TAR transistor 5401 2N5401 fairchild 5401 transistor transistor 2N 5401 Transistor B C 458 2n5401 application	PDF
transistor 2N5401 Abstract: 2N5401 Text: 2N5401 PNP Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS Ta=25 C Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO VCBO VEBO IC Total Device Dissipation TA=25 C	Original	2N5401 270TYP transistor 2N5401 2N5401	PDF
Untitled Abstract: No abstract text available Text: 2N5401 PNP Transistors TO-92 * “G” Lead Pb -Free 1. EMITTER 2. BASE 3. COLLECTOR 1 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base VOltage Collector Current 2N5401 -150 -160 -5.0 600 Symbol VCEO	Original	2N5401 270TYP	PDF
2N5401 fairchild Abstract: No abstract text available Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 SOT-23 E B Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Sourced from Process 74. Absolute Maximum Ratings*	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401 fairchild	PDF
transistor 2n5401 Abstract: 2N5401 To92 transistor of pnp transistor 2n5401 Text: 2N5401 2N5401 TO-92 TRANSISTOR PNP FEATURE Power dissipation PCM : 0.625 W (Tamb=25℃) 1. EMITTER Collector current ICM : - 0.6 A Collector-base voltage V(BR)CBO : -160 V Operating and storage junction temperature range 2. BASE 3. COLLECTOR 1 2 3 TJ, Tstg: -55℃ to +150℃	Original	2N5401 -10mA 30MHz transistor 2n5401 2N5401 To92 transistor of pnp transistor 2n5401	PDF
2N5401 Abstract: CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 CBVK741B019 F63TNR MMBT5401 PN2222N 2N5401 SOT-23 mark 2L SOT-23 RB103	PDF
2N5401 SOT-23 Abstract: 2N5401 fairchild transistor 2N5401 2N5401 MMBT5401 Text: 2N5401 / MMBT5401 2N5401 MMBT5401 C E C B TO-92 B SOT-23 E Mark: 2L PNP General Purpose Amplifier This device is designed as a general purpose amplifier and switch for applications requiring high voltages. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2N5401 MMBT5401 2N5401 OT-23 2N5401 SOT-23 2N5401 fairchild transistor 2N5401 MMBT5401	PDF
2N5550 EBC Abstract: 2N5401 2N5400 5551 2N5550 T092A T0-92A N5400 Text: 2N5401 2N5551 2N 5550 COMPLEMENTARY SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS i CASE TO-92A THE 2N5400, 2N5401 PNP AND 2N5550, 2N5551 (NPN) ARE COMPLEMENTARY SILICON PLANAR EPITAXIAL TRANSISTORS INTENDED FOR GENERAL PURPOSE HIGH VOLTAGE AMPLIFIER AND SWITCHING APPLICATIONS.	OCR Scan	2n5400, 2n5401 2n5550, 2n5551 T0-92A 2n5400 2n555q 2n5551 600mA 2N5550 EBC 2N5401 2N5400 5551 2N5550 T092A N5400	PDF
str g 5551 Abstract: str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551 Text: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET 2N5401 PNP high-voltage transistor 1999 Apr 08 Product specification Supersedes data of 1997 May 22 Philips Sem iconductors PHILIPS PHILIPS Philips Semiconductors Product specification PNP high-voltage transistor 2N5401	OCR Scan	2N5401 2N5401 115002/00/03/pp8 str g 5551 str G 5551 47 transistor cc 5551 transistor 2n5401 2n5401 philips a/STR/LH/8/str g 5551	PDF
2N5401 Abstract: 2N5400 2N5401 MOTOROLA 2N5401 L Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5400 2N5401* PNP Silicon •Motorola Preferred Device COLLECTOR 3 1 EMITTER MAXIM UM RATINGS Symbol 2N5400 2N5401 Unit C ollector-E m itter Voltage VCEO 120 150 Vdc C ollector-B ase Voltage VCBO	OCR Scan	2N5400 2N5401* 2N5400 2N5401 226AA) 2N5401 2N5401 MOTOROLA 2N5401 L	PDF

2N5401 TRANSISTOR Search Results

2N5401 TRANSISTOR Result Highlights (5)

2N5401 TRANSISTOR Price and Stock

Diotec Semiconductor AG 2N5401

Taitron Components Inc 2N5401

Rectron Semiconductor 2N5401

2N5401 TRANSISTOR Datasheets Context Search

2N5401

2N5401

2N5401

diode 2N5401

C2N5401

2N5401

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transistor 2N5401

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2N5401 fairchild

2N5457

2N5401

transistor equivalent book 2N5401

transistor 5401

transistor 2N5401

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2N5401 fairchild

transistor 2n5401

2N5401

2N5401 SOT-23

2N5550 EBC

str g 5551

2N5401