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    2N5415 JANTXV Price and Stock

    Microchip Technology Inc Jantxv2N5415S

    Bipolar Transistors - BJT 200 V Power BJT
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    Microchip Technology Inc JANTXV2N5415P

    Bipolar Transistors - BJT 200 V Power BJT
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    Microchip Technology Inc Jantxv2N5415

    Bipolar Transistors - BJT Power BJT
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    Microchip Technology Inc Jantxv2N5415UA

    Bipolar Transistors - BJT 200 V Power BJT
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    2N5415 JANTXV Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N5415JANTXV Microsemi PNP LOW POWER SILICON TRANSISTOR Original PDF

    2N5415 JANTXV Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5415

    Abstract: 2N5416U4
    Text: 2N5415 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low


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    PDF 2N5415 2N5416 MIL-PRF-19500/485 2N5415 2N5416 MIL-PRF-19500/485. O-205r 2N5416U4

    2N5416

    Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
    Text: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    PDF MIL-PRF-19500/485 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S

    2N5416

    Abstract: 2N5415
    Text: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    PDF MIL-PRF-19500/ 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415

    2N5415

    Abstract: No abstract text available
    Text: 2N5415+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)200 V(BR)CBO (V)200 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)50uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    PDF 2N5415 Freq15M

    transistor U4

    Abstract: 2N5415 2N5416U4
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER


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    PDF MIL-PRF-19500/485N MIL-PRF-19500/485M 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, 2N5416U4, transistor U4 2N5415 2N5416U4

    2N5415

    Abstract: 2N5416U4
    Text: 2N5415U4 2N5416U4 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415U4 and 2N5416U4 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in the longleaded TO-5, short-leaded TO-39 and low profile UA packaging.


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    PDF 2N5415U4 2N5416U4 MIL-PRF-19500/485 2N5415U4 2N5416U4 2N5415 2N5416 MIL-PRF-19500/485. T4-LDS-0305-2,

    2N5416UA

    Abstract: 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 1 September 2010. MIL-PRF-19500/485M 1 June 2010 SUPERSEDING MIL-PRF-19500/485L 26 January 2009 PERFORMANCE SPECIFICATION SHEET * SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER


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    PDF MIL-PRF-19500/485M MIL-PRF-19500/485L 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, 2N5416U4, 2N5416UA 2N54115 2N5416U4 2N5415UA 2N5416 2N5415 MARKING SMD pnp TRANSISTOR ec 2N5416S 2N5415S 2N5415 JANTXV

    2N5415

    Abstract: 2N5416U4
    Text: 2N5415S 2N5416S Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant commercial version Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415S and 2N5416S epitaxial planar transistors are military qualified up to a


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    PDF 2N5415S 2N5416S MIL-PRF-19500/485 2N5415S 2N5416S O-205AD 2N5415 2N5416 MIL-PRF-19500/485. T4-LDS-0305-1, 2N5416U4

    2N5415

    Abstract: 2N5416U4
    Text: 2N5415UA 2N5416UA Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415UA and 2N5416UA epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. The UA package is hermetically sealed and


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    PDF 2N5415UA 2N5416UA MIL-PRF-19500/485 2N5415UA 2N5416UA 2N5415 2N5416 MIL-PRF-19ng T4-LDS-0305-3, 2N5416U4

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


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    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


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    PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    NSP5665

    Abstract: sat 1205
    Text: Bipolar Power Transistors Page 1 of 12 Next Page Home Package Device Type VCEO sus Volts IC (max) Amps PD@ 25° C Watts fT MHZ NPN TO-39 2N1479 * 40 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1480 * 55 1.5 20/60@.2/4 1.4@.2/.02 5 1.5 NPN TO-39 2N1481 *


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    PDF 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 O-254 NSP6340 NSP5665 sat 1205

    JANS2N5416

    Abstract: JANTX2N3868 2N3202 2N3203
    Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S 2N5415 JANTXV2N5415 2N5416 JAN2N5416


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    PDF M5151 2N5151L 2N51S3 JANS2N5416 JANTX2N3868 2N3202 2N3203

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


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    PDF O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467

    2N5415 REPLACEMENT

    Abstract: 2N5416 REPLACEMENT nasa oscilloscope mercury relay clare mercury clare 851 2N5415
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 18 Oct 95. INCH-POUND MIL-S -19500/485E 18 April 1995 SUPERSEDING UI'“ T t -_ C _ 1i^^vv/nuju Q R A A //. QC r\ 15 November 1994 MILITARY SPECIFICATION


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    PDF MIL-S-19500/485E MIL-S-19500/485D 2N5415, 2N5415S, 2N5416, 2N5416S MIL-S-19500. 2N5415 REPLACEMENT 2N5416 REPLACEMENT nasa oscilloscope mercury relay clare mercury clare 851 2N5415

    2N5416 MOTOROLA

    Abstract: CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N3114 2N4033 2N5231 2N4236 MOTOROLA
    Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.


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    PDF BUY49S BF257 BSW68A 2N3114 2N3501* BSW67A N5682 2N5229 2N1613 2N2369 2N5416 MOTOROLA CV8616 2N3501 MOTOROLA 2N5415 MOTOROLA 2N5681 motorola 2N2368 2N4033 2N5231 2N4236 MOTOROLA

    cv8616

    Abstract: BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV
    Text: METAL SMALL-SIGNAL TRANSISTORS continued General-Purpose Amplifiers (continued) Package v (BR)CEO Volts Min fT MHz Min 2 N3963 2N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 80 80 80 60 60 60 45 45 BCY79 @ i •c lc mA mA Max Min 40 100 150 30 200 200


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    PDF N3963 N4026 2N4029 2N3799 2N2906A# 2N2907Af 2N3964 BC177 BCY79 BCY71 cv8616 BC107-108-109 2N2905 MOTOROLA 2N2906 JANTX 2N2904 transistor 2N2904A 2N4033 motorola 2n4033 2N2222A JAN 2N2222A JANTXV

    2N2222A JANTX

    Abstract: 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA MM6427
    Text: METAL SMALL-SIGNAL TRANSISTORS continued Darlington Transistors These transisto rs are ch a ra c te rize d for very high g ain and input im ped an ce a p p lic a tio n s . D evices are of m o nolithic con­ struction. 'c Device Type V(BR) CEO Volts Min mA


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    PDF MM6427 BSS52 BSS51 BSS50 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N2222A JANTX 2N2222A motorola HEP transistors motorola hep bc107-108-109 CV8616 2N3501 JANTX 2n3439 motorola 2N3440 MOTOROLA

    motorola 2N2270

    Abstract: 2N5861 MOTOROLA
    Text: MOTOROLA SC ÎXSTRS/R F} D E | b 3 b 7 a 5 4 DD?b707 D Small-Signal Metal Transistors Selector Guide Errata s< This errata provides the missing page number references for the device index appearing on Page 2. Device Index Also Available In Specification Levels:


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    PDF 2N656 2N657 2N697 2N706 2N708 2N718 2N718A 2N869A 2N914 2N916 motorola 2N2270 2N5861 MOTOROLA

    2N2369At

    Abstract: 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


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    PDF MIL-19500 i2945 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N3501 2N1893 2N2369At 2N2222A motorola 2N3440 MOTOROLA CV8616 2N3439 MOTOROLA 2N1893 motorola JANTX 2n2484 motorola 2N5416 MOTOROLA 2n5230 2N4033 JANS

    BSW68A

    Abstract: 2N4033 2N5680 transistor 2N4033 2N3114 2N3501 2N4237 2N4239 2N5681 BF257
    Text: METAL SMALL-SIGNAL TRANSISTORS continued High-Voltage/High-Current Amplifiers (continued) The following table lists Motorola standard devices that have high Collector-Emitter Breakdown Voltage. Devices are listed in decreasing order of V ( b r ) q e q within each package type.


    OCR Scan
    PDF BUY49S BF257 BSW68A 2N3114 2N3501* BSW67A N5682 BSV16 BC161 2N2904A# 2N4033 2N5680 transistor 2N4033 2N3501 2N4237 2N4239 2N5681

    BC107-108-109

    Abstract: CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


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    PDF MIL-19500 i2945 2N5229 2N1613 2N2369 2N3440 2N1711 2N2369A 2N3501 2N1893 BC107-108-109 CV8616 2N2369At Transistor BC177 2N2222A motorola 2N2905 MOTOROLA 2N5416 MOTOROLA 2N2907 JANTX 2N3440 MOTOROLA 2N2907 JANTX motorola

    MM4003

    Abstract: 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725
    Text: Metal Small-Signal Transistors The fo llo w ing sele c to r guide ta b le s also indicate th o se M o to ro la sm all-sig nal m etal can transisto rs which are q u a lifie d under C E C C 50000, and M IL-19500 high-rel requirem ents. Devices are availab le to C E C C Levels L, F


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    PDF MIL-19500 BSV16 BC161 2N2904A# 2N2905AI BC160 2N29O40 2N2905# 2N2605# 2N3486 MM4003 2N4033 2N2905 BC177 2N3495 2N5680 transistor 2N4033 2N3227 2N3506 2N3725

    2N3303

    Abstract: MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan
    Text: 6367254 MOTOROLA SC XSTRS/R 80C 7 6 6 9 8 F tIOTOROLA SC -CXSTRS/R F> Âü D Difl t,3b?554 □ D 7 b b cifi 3 Low Frequency — Small-Signal Metal CASE 22-03.TO-18 . CASE 20-03 . TÔr72 Motorola Small-Signal Metal Can Transistors are designed for use as General-Purpose Amplifiers, High-Speed Switches, HighVoltage Amplifiers, Low-Level/Low-Noise Amplifiers, HighFrequency Oscillators, Choppers, and Darlingtons. These de­


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    PDF MIL-19500 2N3303 MM8520 2n6431 2n3736 MM420 2n3712 2N4209 2N3252 MOTOROLA 2n914 jantx 2n3506 jan