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    2N5416 PACKAGE Search Results

    2N5416 PACKAGE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPH9R00CQH Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 150 V, 64 A, 0.009 Ohm@10V, SOP Advance / SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation
    TPH2R408QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 120 A, 0.00243 Ohm@10V, SOP Advance Visit Toshiba Electronic Devices & Storage Corporation
    XPH2R106NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 110 A, 0.0021 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    XPH3R206NC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 60 V, 70 A, 0.0032 Ω@10V, SOP Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPH4R008QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 86 A, 0.004 Ohm@10V, SOP Advance(N) Visit Toshiba Electronic Devices & Storage Corporation

    2N5416 PACKAGE Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N5416

    Abstract: 15MHZ TO39 10W
    Text: Search Results Part number search for devices beginning "2N5416" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5416 PNP TO39 300V 1A 30 150 10/50m 15MHz


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    2N5416" 2N5416 2N5416-220M 2N5416CECC 2N5416CSM4 2N5416CSM4-JQR-B 2N5416-JQR-B O257AB O220M) 10/50m 15MHZ TO39 10W PDF

    2N5415

    Abstract: 2N5416U4
    Text: 2N5415 2N5416 Qualified Levels: JAN, JANTX, JANTXV and JANS PNP Silicon Low-Power Transistor Compliant Qualified per MIL-PRF-19500/485 DESCRIPTION This family of 2N5415 and 2N5416 epitaxial planar transistors are military qualified up to a JANS level for high-reliability applications. These devices are also available in TO-39 and low


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    2N5415 2N5416 MIL-PRF-19500/485 2N5415 2N5416 MIL-PRF-19500/485. O-205r 2N5416U4 PDF

    2N5416

    Abstract: 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S
    Text: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    MIL-PRF-19500/485 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415 2N5416 PACKAGE 2N5416S transistor 2N5415 2N5415S PDF

    2N5416

    Abstract: 9016 pnp transistor
    Text: 2N5416 PNP High Voltage Transistors Features: • PNP Silicon High Voltage Transistor. • High speed switching and linear amplifier appliances in Military, Industrial and Commercial Equipment. TO-39 Metal Can Package Dimensions Minimum Maximum A 8.50 9.39


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    2N5416 2N5416 9016 pnp transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


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    2N5416 O205AD) 10/50m 19-Jun-02 PDF

    2N5416

    Abstract: 2N5415
    Text: TECHNICAL DATA PNP LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 485 Devices Qualified Level 2N5415 2N5415S JAN JANTX JANTXV 2N5416 2N5416S MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current


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    MIL-PRF-19500/ 2N5415 2N5415S 2N5416 2N5416S 2N5415, 2N5416 2N5415 PDF

    2N5416

    Abstract: No abstract text available
    Text: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


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    2N5416 O205AD) 10/50m 1-Aug-02 2N5416 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N5416 Dimensions in mm inches . Bipolar PNP Device in a Hermetically sealed TO39 Metal Package. 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) Bipolar PNP Device. 12.70 (0.500) min. 0.89 max. (0.035) VCEO = 300V 0.41 (0.016)


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    2N5416 O205AD) 10/50m 17-Jul-02 PDF

    2N5416

    Abstract: 2N5415 2N5416 PACKAGE BP317
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 2N5415; 2N5416 PNP high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 Philips Semiconductors Product specification PNP high-voltage transistors


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    M3D111 2N5415; 2N5416 MAM334 SCA54 117047/00/02/pp8 2N5416 2N5415 2N5416 PACKAGE BP317 PDF

    BUX98PI

    Abstract: TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI
    Text: April Ô99 DEVICE TYPE NPN PNP 2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 2N5192 2N5195 2N5339 2N5415 2N5416 2N5657 2N5680 2N5681 2N5682 2N5884 2N5886 2N6036 2N6039 2N6050 2N6059 2N6107 2N6111 2N6284 2N6287 2N6388 2N6487 2N6488 2N6490


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    2N3055 2N3439 2N3440 2N3771 2N3772 2N4923 2N5038 2N5153 2N5154 2N5191 BUX98PI TIP147T BU808DFI equivalent 2N3055 TO-220 2N3055 TO-218 Package Fluorescent BALLAST MJE13007 TIP3055 TO-220 ST1803DHI equivalent BU508aFI equivalent BU808DFI PDF

    10 35 DIODE

    Abstract: BFT19B diode 15 35
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 2N5282 STIP30 STIP305 TRSP3743 2N5345 MJE5730 MJE5730 MJE5730 g~~~~ 25 30 BST16 MJ5416 MJ5416 MM5416 MM5416 MM5416 ST5416 2N5416 +RSP5~~6 35 40 TRSP3006 TRSP30X TRSP30X TRSP30X5 TRSP30X5 TRLP3504 TRLP3504


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    37var 220AB 10 35 DIODE BFT19B diode 15 35 PDF

    BU808DFH

    Abstract: ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH
    Text: Power Bipolar Transistors Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions P/N NPN PNP STX112 STBV68 STBV45 STBV42 STBV32 STX13003 100 400 400 400 400 400 P/N NPN PNP BSS44 BFX34 2N5153 2N5681 2N5682 2N5415 BUY49S 2N3440 2N5416


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    STX112 STBV68 STBV45 STBV42 STBV32 STX13003 BSS44 BFX34 2N5153 2N5681 BU808DFH ST2310DHI BU808DFh equivalent BU808DFI equivalent BU808DFh bu808dfi BUX98APW BUV27 BD911/BD912 electronic ballast MJE13007 ST1803DFH PDF

    TRANSISTOR 023

    Abstract: 2N5416 2N5415 2N5415CSM4 2N5416CSM4
    Text: 2N5415CSM4 2N5416CSM4 PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) FEATURES • Silicon Planar PNP Transistor


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    2N5415CSM4 2N5416CSM4 -10mA 2N5415 2N5416 -50mA TRANSISTOR 023 2N5416 2N5415 2N5415CSM4 2N5416CSM4 PDF

    2N5415

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


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    2N5415CSM4 2N5416CSM4 2N5415 -200V 2N5416 -350V -300V Ambien15CSM4 2N5415 PDF

    2N5415

    Abstract: No abstract text available
    Text: SILICON PLANAR EPITAXIAL PNP TRANSISTOR 2N5415CSM4 2N5416CSM4 • Silicon Planar PNP Transistor • Hermetic Ceramic Surface Mounted Package. • Hi-Rel Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated VCBO VCEO VEBO


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    2N5415CSM4 2N5416CSM4 2N5415 -200V 2N5416 -350V -300V 2N5415CSM4, PDF

    transistor U4

    Abstract: 2N5415 2N5416U4
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this document shall be completed by 10 September 2013. MIL-PRF-19500/485N 10 June 2013 SUPERSEDING MIL-PRF-19500/485M 1 June 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, SILICON, LOW-POWER


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    MIL-PRF-19500/485N MIL-PRF-19500/485M 2N5415, 2N5415S, 2N5415UA, 2N5415U4, 2N5416, 2N5416S, 2N5416UA, 2N5416U4, transistor U4 2N5415 2N5416U4 PDF

    2N5415

    Abstract: No abstract text available
    Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeN o 2N5338 CECC 2N5338X 2N5339 2N5339 CECC 2N5339X 2N5344 2N5344A 2N5345 2N5345A 2N5357 2N5385 2N5404 2N5405 2N5406 2N5407 2N5408 2N5409 2N5410 2N5411 2N5411A 2N5414 2N5415 2N5415 CECC 2N5415CSM4 2N5416


    OCR Scan
    2N5338 2N5338X 2N5339 2N5339X 2N5344 2N5344A 2N5345 2N5345A 2N5357 2N5415 PDF

    JANS2N5416

    Abstract: JANTX2N3868 2N3202 2N3203
    Text: Microsemi PNP Transistors Part Number JANTX2N3868 JANTX2N3868S JANTXV2N3868 JANTXV2N3868S 2N4236 2N5147 2N5149 2 N5404 2N5406 2N5405 2N5407 2N3208 2N3202 2N3203 2N3204 2N5679 2N5680 2N5415 JAN2N5415 JANS2N5415 JANS2N5415S JANTX2N5415 JANTXV2N5415 2N5416 JAN2N5416


    OCR Scan
    M5151 2N5151L 2N51S3 JANS2N5416 JANTX2N3868 2N3202 2N3203 PDF

    2N5416 RCA

    Abstract: 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA
    Text: E SOLID STATE qi DE 1 3 fl7SDfll QQ171ba ‘i W^T- 3 1 ~ 1 High-Voltage Power Transistors- 5 !-• _ 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors


    OCR Scan
    2N5415, 2N5416 T-37W7 2N5415: 2N344CT 2NS416: 2N3439" O-205AD 2NS416) 2N5416) 2N5416 RCA 2NS416 2N5416 RCA-2N5415 50C11 2N3440 rca 2N5415 RCA transistors 2n3440 2N541 2N5415 RCA PDF

    2N1132A

    Abstract: 2N3495 2N5415 2n1132a transistor 2N3494 2N2800 2N4033 2N2904 2N2905 2N3467
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PN P TRANSISTOR TO-5/TO205AD/TO-39 PACKAGE DEVICE TYPE VcEO sus VOLTS Ic (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637 2N3743


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3495 2n1132a transistor 2N3494 2N4033 2N3467 PDF

    2N4033

    Abstract: 2N3494 2N5415
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-5/TO205AD/TO-39 V cE O Ic PACKAGE DEVICE TYPE sus VOLTS (max) AMPS TO-5 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N3467 2N3468 2N3494 2N3495 2N3634 2N3635 2N3636 2N3637


    OCR Scan
    O-5/TO205AD/TO-39 T0205AD 2N1132A 2N2800 2N2904 2N2904AA 2N2905 2N2905AA 2N5415 2N5416 2N4033 2N3494 PDF

    2N5416

    Abstract: 2n5415
    Text: Philips Semiconductors Product specification PNP high-voltage transistors 2N5415; 2N5416 FEATURES PINNING • Low current max. 200 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 emitter 2 base 3 collector, connected to case • Switching and linear amplification in military, industrial


    OCR Scan
    2N5415; 2N5416 2N5415 2N5416 PDF

    2N5416 RCA

    Abstract: RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA
    Text: E SOLID STATE High-Voltage Power Transistors. ôï Ì I~T-37-a DEf|3fl7S0âl OQlVlbfl 2N5415, 2N5416 File Number Silicon P-N-P High-Voltage Planar Transistors 336 terminaldesignations For H ig h -S p ee d Sw itching and Lin ear-A m plifier A p plications in M ilitary, Industrial and


    OCR Scan
    T-37-a 2N5415, 2N5416 2N5415: 2N3440' 2N5416: 2N343& 2NS416) 2N5415) 2N5416 RCA RCA-2N5415 2n5415 2N3439 RCA 2N5415 RCA PDF

    2N5416 harris

    Abstract: 2N5416 2N5416 RCA 2N5415
    Text: T-33-1-7 Power Transistors, 2N5415, 2N5416 HARRIS SEMICOND SECTOR File Number 27E D Silicon P-N-P High-Voltage Planar Transistors • 336 M3Q2271 GDnfl7G T « H A S TERMINAL DESIGNATIONS F o r H ig h -S p e e d S w itc h in g and L in e a r-A m p lifie r A p p lic a tio n s in M ilita ry , In d u s tria l and


    OCR Scan
    T-33-1-7 2N5415, 2N5416 M3Q2271 2N5415: 2N344CT 2N5416: 2N343ST 2N5416) 2N5416 harris 2N5416 RCA 2N5415 PDF