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    2N5551 DATASHEET Search Results

    2N5551 DATASHEET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    HS9-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
    HS1-26C31RH-T Renesas Electronics Corporation Quad, 5.0V Differential Line Driver, CMOS Enable Class T Datasheet Visit Renesas Electronics Corporation
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    2N5551 DATASHEET Price and Stock

    Diotec Semiconductor AG 2N5551

    Bipolar Transistor - TO-92 - 160V - 600mA - NPN
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    2N5551 DATASHEET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N5551B

    Abstract: tr 5551 2N5551 SOT23 2n5551 BR 5551 2N5551 circuit 2N5551BU BR N 5551
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


    Original     		PDF 2N5551- MMBT5551 MMBT5551 2N5551 OT-23 2N5551 2N5551B tr 5551 2N5551 SOT23 BR 5551 2N5551 circuit 2N5551BU BR N 5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23

    2N5551 fairchild

    Abstract: 2N5551 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197
    Text: 2N5551 / MMBT5551 NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551 fairchild 2N5551 SOT23 2N5551 circuit 2N5551 SOT-23 MMBT5551 MMBT5551 3s sot23 marking 3S marking 3s SM 3197

    2N5551 SOT23

    Abstract: 2N5551 circuit 2N5551 MMBT5551 2N5551 fairchild
    Text: 2N5551- MMBT5551 tm NPN General Purpose Amplifier Features • This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. • Suffix “-C” means Center Collector in 2N5551 1. Emitter 2. Collector 3. Base • Suffix “-Y” means hFE 180~240 in 2N5551 (Test condition : IC = 10mA, VCE = 5.0V)


    Original     		PDF 2N5551- MMBT5551 2N5551 OT-23 MMBT5551 2N5551 SOT23 2N5551 circuit 2N5551 2N5551 fairchild

    2N5551

    Abstract: BF242 CBVK741B019 F63TNR MMBT5551 PN2222N
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 BF242 CBVK741B019 F63TNR MMBT5551 PN2222N

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N 2N5551 SOT-23 BF242 CJE SOT-23

    2n5551

    Abstract: 2N5551 SOT23 MMBT5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551 SOT23 MMBT5551

    Untitled

    Abstract: No abstract text available
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Sourced from Process 16. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23

    2N5551

    Abstract: CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 SOT-23 E B Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. Absolute Maximum Ratings* Symbol


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 CBVK741B019 F63TNR MMBT5551 PN2222N transistor 2n5551

    2n5551

    Abstract: 2N5551 SOT23
    Text: 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers. 2N5551 MMBT5551 3 2 TO-92 1 SOT-23 Marking: 3S 1. Base 2. Emitter 3. Collector Ordering Information 1


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551TA 2N5551TFR 2N5551TF 2N5551BU 2N5551 SOT23

    2N5551B

    Abstract: 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 2N5551YTA 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU
    Text: 2N5551 / MMBT5551 MMBT5551 2N5551 C E C B TO-92 B SOT-23 E Mark: 3S NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5551 MMBT5551 2N5551 OT-23 2N5551YIUBU 2N5551YTA 2N5551TA 2N5551CBU 2N5551IUTA 2N5551B 2n5551yc sot-23 marking NE 2N5551BU 2N5551Y 5551n transistor marking code ne SOT-23 2n5551c-y 2N5551YBU

    transistor equivalent 2n5551

    Abstract: transistor 2n5551 equivalent 2N5551 equivalent SHD426108
    Text: SHD426108 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 944, REV. - NPN SMALL SIGNAL TRANSISTOR • Hermetic, Ceramic Package • Electrically Equivalent to 2N5551 Absolute Maximum Ratings* Symbol Parameter VCEO VCBO VEBO IC TJ, Tstg TA = 25°C unless otherwise noted


    Original     		PDF SHD426108 2N5551 transistor equivalent 2n5551 transistor 2n5551 equivalent 2N5551 equivalent SHD426108

    transistor equivalent 2n5551

    Abstract: transistor 2n5551 equivalent SHD431108 2N5551 equivalent 2039 transistor
    Text: SENSITRON SEMICONDUCTOR SHD431108 TECHNICAL DATA DATA SHEET 2039, REV - SMALL SIGNAL TRANSISTOR - NPN Electrically Equivalent to 2N5551 DESCRIPTION: A SINGLE NPN SMALL SIGNAL TRANSISTOR IN A CERAMIC LCC-3 PACKAGE. MAXIMUM RATINGS RATING (ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED).


    Original     		PDF SHD431108 2N5551) transistor equivalent 2n5551 transistor 2n5551 equivalent SHD431108 2N5551 equivalent 2039 transistor

    transistor 2N5830

    Abstract: No abstract text available
    Text: 2N5830 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N5830 2N5551 transistor 2N5830

    2N4410

    Abstract: 2N5551 CBVK741B019 F63TNR PN2222N to92 lead code d
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N4410 2N5551 2N4410 CBVK741B019 F63TNR PN2222N to92 lead code d

    transistor equivalent 2n5551

    Abstract: 2N5551 circuit tnr* G series 2N5551 CBVK741B019 F63TNR MPSL01 PN2222N
    Text: MPSL01 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose, high voltage amplifiers and gas discharge display driving. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF MPSL01 2N5551 transistor equivalent 2n5551 2N5551 circuit tnr* G series CBVK741B019 F63TNR MPSL01 PN2222N

    Untitled

    Abstract: No abstract text available
    Text: 2N4410 C TO-92 BE NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 50 mA. Sourced from Process 16. See 2N5551 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		PDF 2N4410 2N5551

    2N5551UB

    Abstract: package LCC-3
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V, 0.5 A Datasheet — production data Features 3 BVCEO 160 V IC max 0.5 A 1 HFE at 5 V - 10 mA > 80 Operating temperature range -65 °C to +200 °C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB package LCC-3

    2N5551UB

    Abstract: SOC5551 SOC5551SW 2n5551 smd 2N5551HR IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2N5551UB SOC5551 SOC5551SW 2n5551 smd IC 5201/019/05 SOC5551SW 520101904 SOC5551HRB 2N5551UB1

    Untitled

    Abstract: No abstract text available
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR

    2n5551 smd

    Abstract: 2N5551HR
    Text: 2N5551HR Hi-Rel NPN bipolar transistor 160 V - 0.5 A Features 3 BVCEO 160 V IC max 0.5 A HFE at 5 V - 10 mA > 80 Operating temperature range -65°C to +200°C • Linear gain characteristics ■ ESCC qualified ■ European preferred part list - EPPL ■


    Original     		PDF 2N5551HR 2N5551HR 2n5551 smd

    Untitled

    Abstract: No abstract text available
    Text: 2N5551CSM HIGH VOLTAGE NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches FEATURES 0.31 rad. (0.012) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 3 2 • HERMETIC CERAMIC SURFACE MOUNT


    Original     		PDF 2N5551CSM 2N5551

    TIS98

    Abstract: No abstract text available
    Text: E^hOhOO OETTDiï^ I NPN General Purpose Amplifiers and Switches Device No. PN100 9TT PN100A Case Style TO-92 92 TO-92 (92) V CBO V CEO v EBO (V) Min (V) Min (V) Min 75 45 6 75 45 6 (continued) ICES * ^CBO (nA) Max 50 50 V @ hFE (V) Min 60 80 100 100 100


    OCR Scan     		PDF PN100 TIS98 2N4410 2N5551 2N5830

    2N5551 CJ

    Abstract: No abstract text available
    Text: This I tr Material Ln a b-1 t-1 U a NPN General Purpose Amplifiers and Switches Device No. Case Style ^C B O V CEO Copyrighted V Min (V) Min (V) Min 75 45 6 CD jr PN100 CD TO-92 (92) vEBO (continued) ICES* *CBO (nA) Max 50 V @ CB hFE (V) Min 60 80 100 100


    OCR Scan     		PDF oo404tiS 2N5551 CJ