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    2N5551 MOTOROLA Search Results

    2N5551 MOTOROLA Result Highlights (2)

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    AS839 Coilcraft Inc DSL transformer, for Motorola MC145660, SMT, not RoHS Visit Coilcraft Inc
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    2N5551 MOTOROLA Datasheets Context Search

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    2N5551 diodes inc

    Abstract: 2N5551 circuit diodes inc 2N5551 2N5550 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


    Original     		PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 diodes inc 2N5551 circuit diodes inc 2N5551 2N5550 motorola 1N914 2N5551 2N5551 TO92 2N5551 motorola

    2N5551

    Abstract: 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5550 2N5551 diodes inc 2N5551 motorola
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage


    Original     		PDF 2N5550/D 2N5550 2N5551* 2N5550 2N5551 2N5550/D* 2N5551 2N5551 circuit motorola 1N914 diode datasheet 1N914 2N5551 diodes inc 2N5551 motorola

    transistor equivalent 2n5551

    Abstract: 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 EMITTER MAXIMUM RATINGS 1 Rating Symbol 2N5550 2N5551 Unit Collector – Emitter Voltage VCEO 140 160 Vdc Collector – Base Voltage


    Original     		PDF 2N5550 2N5551* 2N5551 226AA) Resistanc218A MSC1621T1 MSC2404 MSD1819A MV1620 transistor equivalent 2n5551 2N5551 equivalent transistor 2n5551 equivalent 2n2222 2n5401 2n5551 2N5551 148 BC237 2n3819 equivalent ic 2N5551 motorola

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper MMBFJ175LT1 P–Channel — Depletion Motorola Preferred Device 2 SOURCE 3 GATE 3 1 DRAIN 1 2 MAXIMUM RATINGS Rating Drain – Gate Voltage Reverse Gate – Source Voltage Symbol Value Unit VDG 25 V VGS r


    Original     		PDF MMBFJ175LT1 236AB) Ga218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA JFET Chopper P–Channel — Depletion 2 SOURCE MMBFJ177LT1 3 GATE 1 DRAIN 3 1 MAXIMUM RATINGS Rating Drain–Gate Voltage Reverse Gate–Source Voltage Symbol Value Unit VDG 25 Vdc VGS r – 25 Vdc 2 CASE 318 – 08, STYLE 10


    Original     		PDF MMBFJ177LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237

    BC237

    Abstract: MPSA06 346
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste


    Original     		PDF MMBD1000LT1 MMBD2000T1 MMBD3000T1 MMSD1000T1 MMBD1000LT1 OT-23 O-236AB) V218A MSC1621T1 MSC2404 BC237 MPSA06 346

    BC237

    Abstract: MARKING CODE diode sod123 W1 K 2056 transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3455XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3455XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1 K 2056 transistor

    2N643

    Abstract: BC237 MARKING DP SOT-363 DO204AA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1010LT1 MMBD2010T1 MMBD3010T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1010LT1 MMBD2010T1 MMBD3010T1 MMBD1010LT1 S218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 2N643 BC237 MARKING DP SOT-363 DO204AA

    BC237

    Abstract: MMBD2005T1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MMBD1005LT1 MMBD2005T1 MMBD3005T1 Switching Diode Part of the GreenLine Portfolio of devices with energy–conserving traits. This switching diode has the following features: • Very Low Leakage ≤ 500 pA promotes extended battery life by decreasing energy waste. Guaranteed leakage limit is for each diode in the pair


    Original     		PDF MMBD1005LT1 MMBD2005T1 MMBD3005T1 MMBD1005LT1 MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 BC237

    BC237

    Abstract: MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3441XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3441XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 MARKING CODE diode sod123 W1

    2N16

    Abstract: BC237 BCY72
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF1P02ELT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single P-Channel Field Effect Transistors Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF1P02ELT1 L218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2N16 BC237 BCY72

    2n2222 h 331 transistors

    Abstract: 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  MGSF3442XT1 Preliminary Information Motorola Preferred Device Low rDS on Small-Signal MOSFETs TMOS Single N-Channel Field Effect Transistors  Part of the GreenLine Portfolio of devices with energy– conserving traits.


    Original     		PDF MGSF3442XT1 T218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n2222 h 331 transistors 2n2222 -331 transistors 2n2222 331 transistors BC237 2n2222 h 331 MARKING CODE diode sod123 W1

    MMBF4856

    Abstract: transistor equivalent 2n5551 BF245 application note MSC2404 MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information MDC3105LT1 Motorola Preferred Device Integrated Relay/Solenoid Driver • Optimized to Switch 3 V to 5 V Relays from a 5 V Rail • Compatible with “TX’’ and “TQ’’ Series Telecom Relays Rated up to


    Original     		PDF Automat218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 MV1644 MMBF4856 transistor equivalent 2n5551 BF245 application note MSC1621 74LS04 Fan Out 2n3819 equivalent transistor MMBF5486L bf245 equivalent MPS8093

    2n3819 replacement

    Abstract: 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Silicon Tuning Diode MMBV809LT1 This device is designed for 900 MHz frequency control and tuning applications. It provides solid–state reliability in replacement of mechanical tuning methods. Motorola Preferred Device


    Original     		PDF MMBV809LT1 236AB) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 2n3819 replacement 2n3053 replacement BC109C replacement mps2907 replacement bf245 replacement BC237 BF245 bf258 replacement J112 equivalent 2N4265

    BC237

    Abstract: Fet BF245
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor N–Channel — Enhancement VN0300L 3 DRAIN Motorola Preferred Device 2 GATE  1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain – Source Voltage VDSS 60 V Drain – Gate Voltage VDGR 60 V


    Original     		PDF VN0300L 226AA) MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 MV1642 BC237 Fet BF245

    MPS751 equivalent

    Abstract: MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MPS650 MPS651 * PNP MPS750 MPS751 * Amplifier Transistors COLLECTOR 3 COLLECTOR 3 2 BASE 2 BASE NPN PNP Voltage and current are negative for PNP transistors 1 EMITTER 1 EMITTER *Motorola Preferred Devices MAXIMUM RATINGS


    Original     		PDF MPS650 MPS651 MPS750 MPS751 MPS651 MPS751 2218A MSC1621T1 MPS751 equivalent MPS651 equivalent 2n2222 npn transistor footprint BC237 pnp for 2n3019 pnp bc547 transistor 2n2219 soa Transistor BC107 NPN GENERIC PNP SILICON TRANSISTOR 2n2222 2N2222 MPS2222 npn transistor

    mpsa63 replace

    Abstract: BC237 MPSA63 equivalent J111
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA62 MPSA63 MPSA64 * PNP Silicon COLLECTOR 3 MPSA55, MPSA56 BASE 2 For Specifications, See MPSA05, MPSA06 Data *Motorola Preferred Device EMITTER 1 MAXIMUM RATINGS Symbol MPSA62 MPSA63 MPSA64 Unit


    Original     		PDF MPSA62 MPSA63 MPSA64 MPSA55, MPSA56 MPSA05, MPSA06 MPSA62 mpsa63 replace BC237 MPSA63 equivalent J111

    SOT23 JEDEC standard orientation pad size

    Abstract: sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP Silicon Epitaxial Transistor PZT2907AT1 Motorola Preferred Device This PNP Silicon Epitaxial transistor is designed for use in linear and switching applications. The device is housed in the SOT-223 package which is


    Original     		PDF OT-223 PZT2222AT1 PZT2907AT1 inch/1000 PZT2907AT3 inch/4000 uni218A MSC1621T1 SOT23 JEDEC standard orientation pad size sot-23 npn marking code VD BC237 p2f sot-23 transistor 2N5458

    2H5551

    Abstract: 2Ns551
    Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it Collector-Emitter Voltage VCEO 140 160 Vdc Collector-Base Voltage VCBO 160 180 Vdc Emitter-Base Voltage Rating vebo 6.0 Vdc Collector Current — Continuous fC 600 m Adc Total Device Dissipation @ TA - 25°C


    OCR Scan     		PDF 2N5550 2N5551* 2N5551 O-226AA) 2H5551 2H5551 2Ns551

    2N5550

    Abstract: 5551 2n 5551 2N5551 motorola 2NS551 2NSS51
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N5551* NPN Silicon COLLECTOR 3 ‘Motorola Preferred Device 1 EMITTER MAXIMUM RATINGS Rating Symbol 2N5550 2N5551 Unit Vdc C o lle c to r-E m itte r Voltage VCEO 140 160 C o lle c to r-B a s e Voltage


    OCR Scan     		PDF 2N5550 2N5551* 2N5550 2N5551 1N914 2NS851 5551 2n 5551 2N5551 motorola 2NS551 2NSS51

    2n5551

    Abstract: 2N5550 st 2n5551
    Text: 2N5550 2N5551* M AXIM UM RATINGS Sym bol 2N5550 2N5551 U n it C oilector-E m itter Voltage VCEO 140 160 Vdc Collector-Base Voltage v CBO 160 180 Vdc Emitter-Base Voltage R ating v EBO 6.0 Vdc C ollector C urrent — C ontinuous 'c 600 m Adc Total Device D issipation


    OCR Scan     		PDF 2N5550 2N5551* 2N5551 O-226AA) 2N5550, 2N5551 st 2n5551

    2n 5550

    Abstract: 2N5551 diodes inc 2n5551
    Text: MOTOROLA Order this document by 2N5550/D SEMICONDUCTOR TECHNICAL DATA Amplifier Transistors 2N5550 2N 5551* NPN Silicon COLLECTOR 3 MAXIMUM RATINGS Symbol 2N5550 2N5551 Unit C o lle c to r-E m itte r Voltage Rating VCEO 140 160 Vdc C o lle c to r-B a s e Voltage


    OCR Scan     		PDF 2N5550/D 2N5550 2N5550 2N5551 2n 5550 2N5551 diodes inc 2n5551

    2N4418

    Abstract: 2N4409 SILICON SMALL-SIGNAL DICE MPS-D02 SILICON DICE motorola
    Text: MOTOROLA SC -CDIODES/OPTO} 6367255 MOTOROLA SC BM !=>3k>7255 DD3ÖDD3 Ö f 34-C 3 8 0 0 3 D IO D E S /O P T O D SILICON SMALL-SIGNAL TRANSISTOR DICE (conrfnued) 2C5551 DIE NO. — NPN LINE SOURCE — DMB106 This die provides performance similar to that of the following device types:


    OCR Scan     		PDF DMB106 2N4409 2N4410 2N4418* 2N55S0 2N5551 MM3008 MM3009 MPS5135 MPSD02 2N4418 SILICON SMALL-SIGNAL DICE MPS-D02 SILICON DICE motorola

    MPS2307

    Abstract: differential amplifier 2n5551 2N6520 MOTOROLA BF845 BF844 BF493 MPS A92 transistor 2N6515 2N6516 2N6517
    Text: SMALL-SIGNAL TRANSISTORS — PLASTIC continued High Voltage Amplifier Transistors (TO-92 • EBC)* These high-voltage transistors are designed for driving neon bulbs and Nixie@ indicator tubes, for direct line operation, and for other applications requiring high-voltage capability at relatively low collector current. These devices are listed in


    OCR Scan     		PDF BF844 MPSA44 BF845 MPSA45 2N6517 BF393 BCX53 BCX78 BCX59 BCX79 MPS2307 differential amplifier 2n5551 2N6520 MOTOROLA BF493 MPS A92 transistor 2N6515 2N6516