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    Microchip Technology Inc 2N5581

    TRANS NPN 50V 0.8A TO46
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    Microchip Technology Inc JAN2N5581

    TRANS NPN 50V 0.8A TO46
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    Microchip Technology Inc JANTX2N5581

    TRANS NPN 50V 0.8A TO46
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    Microchip Technology Inc JANTXV2N5581

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    Microchip Technology Inc 2N5581JAN/TR

    Trans GP BJT NPN 50V 800mA 3-Pin TO-46 T/R - Tape and Reel (Alt: JAN2N5581/TR)
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    2N5581 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Type PDF
    2N5581 Central Semiconductor Pol=NPN / Pkg=TO46 / Vceo=40 / Ic=0.8 / Hfe=20min / fT(Hz)=250M / Pwr(W)=2 Original PDF
    2N5581 Microsemi NPN Silicon Switching Transistor Original PDF
    2N5581 Semico Silicon NPN Transistor Original PDF
    2N5581 Central Semiconductor Small Signal Transistors TO-46 Case Scan PDF
    2N5581 Motorola Power Transistor Selection Guide Scan PDF
    2N5581 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5581 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5581 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N5581 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N5581 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N5581 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N5581 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N5581 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5581 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N5581 New England Semiconductor SMALL SIGNAL PNP TRANSISTOR TO-46 Scan PDF
    2N5581J Semico Package = TO-46 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = Ic (A) = 0.80 Power (W) ta = 0.5 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 120 VCE(sat) (V) = 0.30 Original PDF
    2N5581JAN New England Semiconductor NPN SILICON SWITCHING TRANSISTOR Original PDF
    2N5581JANTX New England Semiconductor NPN SILICON SWITCHING TRANSISTOR Original PDF
    2N5581JANTXV New England Semiconductor NPN SILICON SWITCHING TRANSISTOR Original PDF
    2N5581JV Semico Package = TO-46 Level = Jantxv Vceo (V) = 50 Vcbo (V) = 75 Vebo (V) = Ic (A) = 0.80 Power (W) ta = 0.5 Rtja (C/W) = Tstg/top (C) = -55 to +200 Hfe = 120 VCE(sat) (V) = 0.30 Original PDF

    2N5581 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N558

    Abstract: 2N5581
    Text: 2N5581 Silicon NPN Transistor Data Sheet Description Applications SEMICOA Corporation offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)


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    PDF 2N5581 MIL-PRF-19500 2N5581J) 2N5581JX) 2N5581JV) MIL-STD-750 MIL-PRF-19500/423 2N558 2N5581

    Untitled

    Abstract: No abstract text available
    Text: 2N5581+JAN Transistors Si NPN Power HF BJT Military/High-RelY V BR CEO (V)40 V(BR)CBO (V)75 I(C) Max. (A)800m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.


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    PDF 2N5581 Freq250M StyleTO-46 Code3-12

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/ 423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


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    PDF MIL-PRF-19500/ 2N5581 2N5582 O-206AB)

    2N5581

    Abstract: 2N5582
    Text: TECHNICAL DATA 2N5581 JAN, JTX, JTXV 2N5582 JAN, JTX, JTXV MIL-PRF QPL Processed per MIL-PRF-19500/423 DEVICES NPN SWITCHING SILICON TRANSISTOR MAXIMUM RATINGS Ratings Symbol Collector-Emitter Voltage VCEO Collector-Base Voltage VCBO Emitter-Base Voltage VEBO


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    PDF 2N5581 2N5582 MIL-PRF-19500/423 O-206AB)

    2N5581

    Abstract: No abstract text available
    Text: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)


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    PDF 2N5581 MIL-PRF-19500 2N5581J) 2N5581JX) 2N5581JV) MIL-STD-750 MIL-PRF-19500/423 2N5581

    2N5581

    Abstract: 2N5581 JAN 2N5581J 2N5581JV 2N5581JX
    Text: 2N5581 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • General purpose switching • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N5581J • JANTX level (2N5581JX)


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    PDF 2N5581 MIL-PRF-19500 2N5581J) 2N5581JX) 2N5581JV) MIL-STD-750 2N5581 2N5581 JAN 2N5581J 2N5581JV 2N5581JX

    2N5582

    Abstract: 2N5581 TO-206AB
    Text: TECHNICAL DATA NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/423 Devices Qualified Level 2N5581 JAN JANTX JANTXV 2N5582 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Total Power Dissipation


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    PDF MIL-PRF-19500/423 2N5581 2N5582 O-206AB) 2N5582 2N5581 TO-206AB

    1N6762

    Abstract: JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB
    Text: Future QML Qualified Products New Products Product Lines Custom Packaging New Products Announcement Read about what's new at NES QML Program Complete listing of our MIL-PRF-19500 JANTX and JANTXV qualified products. Click here to see our Future Quals. Product Line Index


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    PDF MIL-PRF-19500 2N720A 2N1131 2N1132 2N1893 JANHC2N2222A JANKC2N2222A JANH3057A 2N3250A 2N3251A 1N6762 JANKC2N2907A NES 2n4405 2N5684 JANTX 2n3031 2N6351 2N5415 2N2907AUB

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    2N3810 LCC

    Abstract: 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB
    Text: Bipolar Small Signal Transistors Page 1 of 9 Next Home Package Device Type VCEO sus Volts IC (max) Amps hFE@IC/VCE min/max @ mA/V VCE(sat)@ IC/IB COB V@mA/mA pF fT MHZ PNP TO-5/205AD 2N1132A 40 0.6 30/90@150/10 1.5@150/15 30 60 NPN TO-5/205AD 2N1613,L *


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    PDF O-116 2N3810 LCC 206AA *2N2920* LCC 2N3811 JANTX 2n3737 2N2907AUB

    2N5629

    Abstract: No abstract text available
    Text: Search Results Part number search for devices beginning "2N5430" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N5430 NPN TO66 100V 7A 60 240 2/2 30MHz


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    PDF 2N5430" 2N5430 2N5430X 30MHz 2N5581" 2N5581 2N5581-JQR-B 250MHz 2N5629

    2N2222A motorola

    Abstract: 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222
    Text: MOTOROLA Order this document by 2N2219/D SEMICONDUCTOR TECHNICAL DATA General Purpose Transistors COLLECTOR 3 2 BASE LAST SHIP 21/03/00 2N2219 2N2219A* 2N2222 2N2222A* NPN Silicon *Motorola Preferred Devices 1 EMITTER MAXIMUM RATINGS Symbol 2N2219 2N2222 2N2219A


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    PDF 2N2219/D 2N2219 2N2219A* 2N2222 2N2222A* 2N2219A 2N2222A 2N2219 2N2222A motorola 2n2222 motorola 2N2219A MOTOROLA motorola 2N2219 2N2219 MOTOROLA motorola 2n2222 motorola 2N2219A equivalent transistor 2N2222 motorola 2N2222A 2n2222

    2n2369 avalanche

    Abstract: 2n4949 2N7373 2N1711 gc. marking 2N1131 2N2222 2N2369 2N2432 2N2484
    Text: Open Project Status Spec Tech Action Status 114 H RK CORRECTION TO CONFORMANCE INSP FORMAT FD TO EDIT 6 APR 2010 9/29/2009 124 RK CORRECTION TO TEST RATINGS TABLE ID TO EDIT 23 OCT 2010 6/15/2010 177 H GC 2N1131 ADD FREQ TO A4, HOB, HIB AND HRB DATED TO TOM 29 OCT 2010


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    PDF 2N1131 2N718A 2N1711 2N4949 5961-E084 5980-E011 5980-E010 5961-E087 5961-E079 2n2369 avalanche 2N7373 gc. marking 2N2222 2N2369 2N2432 2N2484

    2N2222A 331

    Abstract: 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331
    Text: MOTOROLA SC XSTRS/R 12E F 2N2218A 2N2219A 2N2221A 2N2222A 2N5581 2N55S2 Unît 40 40 Vdc Vdc Sym bol 2N2218 2N2219 2N2221 2N2222 Collector-Emitter Voltage v CEO 30 Collector-Base Voltage VCBO 60 75 75 Emrtter*Base Voltage Ve b o 5.0 6.0 6.0 Vdc 'c 800 800 800


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    PDF b3b7E54 2N2218 2N2219 2N2221 2N2222 2N2218A 2N2219A 2N2221A 2N2222A 2N2218, 2N2222A 331 2n2222 -331 2N2222A motorola 2n2222 -331 transistors 2n2222 a 331 2n2222 331 transistors 2n2222 h 331 transistors 2n2222 h 331 2n2222 - 331 2n2222 331

    2n5680

    Abstract: 2n5680 motorola 2N5679 MOTOROLA
    Text: 2N5415, 2N5416 For Specifications, See 2N3439 Data. 2N5581/82 For Specifications, See 2N2218.A Data. M A X IM U M RATINGS 2N5680 2N5682 Untt 120 Vdc 120 Vdc Symbol 2N5679 2N5681 Collector-Emitter Voltage VCEO 100 Collector-Base Voltage VCBO 100 Emitter-Base Voltage


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    PDF 2N5415, 2N5416 2N3439 2N5581/82 2N2218 2N5679 2N5680 2N5682 2N5681 2n5680 2n5680 motorola 2N5679 MOTOROLA

    2N5581

    Abstract: 2n5582
    Text: SEMICONDUCTOR TECHNICAL DATA 2N5581 2N5582 NPN Silicon Small-Signal Tranaiatora crystaloncs Ronkorkorw, N Y. 11771, MAXIMUM RATINGS Rating Symbol Value Collector-Emitter Voltage VCEO 50 Vdc Collector-Base Voltage VCBO 75 Vdc Collector Current •c 800 mAdc


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    PDF 2N5581 2N5582

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    2N5581A

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR SMALL SIGNAL PNP TRANSISTOR TO-46 PACKAGE PNP TO-46 1 I IH hpE @ IC/ Vce min/max @ mA/V VcEO sus VOLTS Ic (max) AMPS 2N2604 45 0.03 60@0.5/5 2N2605 45 0.03 150@0.5/5 2N2944AA 10 0.1 2N2945 20 2N2945AA DEVICE TYPE VcE<sat) @ Ic^B


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    PDF 2N2604 2N2605 2N2944AA 2N2945 2N2945AA 2N2946 2N2946AA 2N3485 2N3485AA 2N3486 2N5581A

    MMBF112L

    Abstract: MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211
    Text: motorcla sc xstrs / r ia e i o I bH t,?as4 3 o o ö s t ii Small-Signal Bipolar Transistors Plastic-Encapsulated M o to ro la 's s m a ll-s ig n a l T O -2 26 p la s tic tra n s is to rs e n c o m p a s s h u n d re d s o f d e v ic e s w ith a w id e v a rie ty


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    PDF 06050L MMBD914L BAS16L BAL99L MBAV70L MBAV99L MBAV74 BD2835XL MBD2836XL MMBD2837XL MMBF112L MFE521 MMBF112 2N3797 equivalent MFE131 equivalent MPS5210 BC557 SOT23 8C448 BC459C mfe211

    EATON CM20A

    Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
    Text: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main


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    s parameters of 2N2222

    Abstract: 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit 2n2222a 2N2219
    Text: M A X IM U M RATINGS Rating Symbol 2N 2219 2N2222 2N2218A 2N2219A 2N2222A Unit Vdc C o lle cto r-E m itte r Voltage v CEO 30 40 Collector-Base Voltage v CBO 60 75 Vdc Em itter-Base Voltage v EBO 5.0 6.0 Vdc m Adc C o lle ctor C u rrent — C ontinuous •c


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    PDF 2N2222 2N2218A 2N2219 2N2219A 2N2222A s parameters of 2N2222 2n2222 equivalent 2N2222 z parameters 2n2219 equivalent 2N2219A equivalent equivalent of 2n2222 2n2222 test circuit

    TRIAC 97A6

    Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
    Text: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1


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    PDF OD-80 OD-323 OT-23 OT-89 OT-143 OT-223 OT-323 TRIAC 97A6 S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C

    1N5438

    Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
    Text: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­


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    PDF 27TfC 1N5438 tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175

    transistors BC 557C

    Abstract: BF366 SMD code 307C F199 transistor 2N5793 BC413 motorola ZENER diode marking code z7 equivalent of transistor bc212 bc 214 bc107c motorola 2n555
    Text: S e le c to r G u id e s 1 M e ta l-C a n T ra n s is to rs 3 F ie ld -E ffe c t T ra n s is to rs 4 S m a ll-S ig n a l T u n in g , S w itc h in g and Z e n e r D io d e s 5 T a p e a n d R eel S p e c ific a tio n s P a ck ag e O u tlin e D im e n s io n s and


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