2N5811 TRANSISTOR SUBSTITUTE Search Results

2N5811 TRANSISTOR SUBSTITUTE Result Highlights (5)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TTC5886A		Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097		Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB		Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

2N5811 TRANSISTOR SUBSTITUTE Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2N2219 transistor substitute Abstract: 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007 Text: SELECTOR GUIDE TO 18 SILICON SIGNAL TRANSISTORS Current V cE O '~ '\„^ I Voltage 50/iA to NPN 5mA 5mA rap 25mA 25mA to 20 : 2N6000 2N60Q2 2N6001 2N6S03 t] 800mA NPN PNP 2NB001 2NWQ3 2N6000 2N6002 2N6001 2N6003 pn p GET3014 GET3S3B GET3638A GET3638 GET3638A	OCR Scan	50/iA 800mA GET706 GET708 GET914 GET3013 GET3646 GE1705 CET708 2N2219 transistor substitute 2N3416 equivalent D33025 2N2222 npn small signal current gain 2N2222 chip 1n3600 chip 2n8004 diode 2N5815 2N3856 2NS007	PDF
2N3638 equivalent Abstract: 2N2219 transistor substitute 2N3638 transistor 2N5816 2N5815 2N5818 of 2n2905 1N4532 2N5813 hs5810 Text: SILICON SIGNAL GENERAL PURPOSE COMPLEMENTARY PNP-NPN PAIRS TO-18 PACKAGE Ccb hpE @ 2V, 2mA Pt 5 2 5 °C Im W ) (mA) Min. Max. hFE @ 2V, 500mA Min. @ 10V, 1MHz Max. (Pt) fr Typ ical >MH^ NPN PNP VcEO (V) 2N5810 2M5811 25 500 750 60 200 45 9.5 150 2N5812 2N5813	OCR Scan	500mA 2N5810 2N5811 2N5812 2N5813 2N5814 2M5815 2N5816 2M5817 2N5818 2N3638 equivalent 2N2219 transistor substitute 2N3638 transistor 2N5815 of 2n2905 1N4532 hs5810	PDF
AL102 ATES Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29 Text: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible	OCR Scan	Trans-611 DT1521 2N2270 BC107-182KS ESC182KAS ESC182KBS ESC1Q8-183KS EiC183KBS 8C183KCS BC109-184KS AL102 ATES 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29	PDF
JE1100 Abstract: MFC8040 MFC8030 MC1316 Triac 9707 schematic of mc1466 Transistor MJE 5332 je 3055 Motorola MCR407-2 MC1466 Text: M ASTER SELECTION GUIDE MOTOROLA Semiconductors SELECTING THE BEST SEMICONDUCTOR Selecting the best semiconductor fo r a given application can pose a significant challenge. To sim plify the task in selecting a "best" transistor, diode or other device fo r newdesigns, this book's selection tables includeall popular semiconductor devices	OCR Scan		PDF
y51 h 120c Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711 Text: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK	OCR Scan	500MA 500MA 240MWF 240MWF y51 h 120c bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711	PDF
sx3704 Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353 Text: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide	OCR Scan		PDF