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    2n6027

    Abstract: 2N602S 2n6027 PUT 2N6028
    Text: B a c k to S ilic o n C o n tro lle d R ectifiers 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT


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    PDF 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2N6116 2n6027 PUT 2N6028

    Unijunction

    Abstract: Programmable unijunction 2N6116 PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit 2N6027
    Text: 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 Programmable Unijunction Transistors PUTs are complementary Silicon Controlled Rectifiers (SCRs) with a PNPN structure. SCR Programmable Unijunction Transistors PUT anode anode Gate N Gate N N N cathode cathode G<V " •N


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    PDF 2N6027 2N602S 2N6116 2N6117 2N6118 2N6137 2n6116 2n6117 2n6118 Unijunction Programmable unijunction PUT 2N6027 PUT Oscillator 2n6027 thyristor applications 2n6027 die 2N6027/2N6028 thyristor scr oscillator circuit

    2n2646 equivalent

    Abstract: 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    PDF 2N489-494â 2N2646-47â 2N6028 2N2926 GE76F02FC100 2n2646 equivalent 2N2646 replaced by UJT 2N2646 ujt 2N6027 D13T1 CIRCUITS BY USING 2N6027 2n2646 ujt ujt transistor equivalent 2n2646 applications of ujt with circuits

    UJT 2N2646 specification

    Abstract: UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


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    PDF 2N489-494â 2N2646-47â 0047/iF UJT 2N2646 specification UJT 2N2646 ratings UJT 2N2646 UJT 2N2646 operation 2n2646 ujt D5K2 ujt 2N6027 ujt transistor scr firing circuit UJT triggering circuit UJT 2N2646 RANGE

    UJT 2N2646 specification

    Abstract: UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1
    Text: UNIJUNCTIONS, TRIGGERS AND SWITCHES Since the introduction of the commercial silicon unijunction transistor in 1956, General Electric has continued de­ veloping an extensive line of negative resistance threshold and four-layer switch devices. Each of these devices can


    OCR Scan
    PDF 2N489-494â 2N2646-47â 0047/iF 100kn UJT 2N2646 specification UJT 2N2646 2n2646 ujt applications of ujt CIRCUITS BY USING 2N6027 applications of ujt with circuits 2N6028 scr firing circuit UJT triggering circuit unijunction application note D5K1

    2N6027 MOTOROLA

    Abstract: 2N6027 2N6028 MOTOROLA 2N6028 Q375 2N6028 CIRCUIT 2n6027 circuit
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6027 2N6028 Programmable Unijunction Transistors Silicon Programmable Unijunction Transistors . . . designed to enable the engineer to "program” unijunction characteristics such as R b b . ri, ly, and ip by merely selecting two resistor values. Application includes


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    PDF TD17b 2N6027 2N602S 2N6028 10kfl 2N6027 MOTOROLA 2N6028 MOTOROLA Q375 2N6028 CIRCUIT 2n6027 circuit