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    2N6277 EQUIVALENT Search Results

    2N6277 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP64-P-1010-0.50E Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP52-P-1010-0.65 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62AUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP44-P-1010-0.80A Visit Toshiba Electronic Devices & Storage Corporation

    2N6277 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6277 equivalent

    Abstract: 2N6277 2N6274 2N6277 applications
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		MIL-PRF-19500/514 2N6274 2N6277 T4-LDS-0163 2N6277 equivalent 2N6277 2N6274 2N6277 applications PDF

    Untitled

    Abstract: No abstract text available
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http://www.microsemi.com NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/514 DEVICES LEVELS 2N6274 2N6277 JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)


    Original     		MIL-PRF-19500/514 2N6274 2N6277 T4-LDS-0163 PDF

    diode cc 3053

    Abstract: cc 3053 diode 2N6277 equivalent
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 3 September 2013. MIL-PRF-19500/514D 3 June 2013 SUPERSEDING MIL-PRF-19500/514C 20 November 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		MIL-PRF-19500/514D MIL-PRF-19500/514C 2N6274 2N6277, MIL-PRF-19500. diode cc 3053 cc 3053 diode 2N6277 equivalent PDF

    diode cc 3053

    Abstract: 2N6277 equivalent 7827 Transistor transistor 2N6274 2N6274 2N6277 514B14
    Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 20 February 2007. * MIL-PRF-19500/514C 20 November 2006 SUPERSEDING MIL-PRF-19500/514B 14 May 1999 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER,


    Original     		MIL-PRF-19500/514C MIL-PRF-19500/514B 2N6274 2N6277, MIL-PRF-19500. diode cc 3053 2N6277 equivalent 7827 Transistor transistor 2N6274 2N6277 514B14 PDF

    2SA1046

    Abstract: 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High-Power NPN Silicon Transistors . . . designed for use in industrial–military power amplifer and switching circuit applications. • High Collector Emitter Sustaining — VCEO sus = 100 Vdc (Min) — 2N6274 VCEO(sus) = 120 Vdc (Min) — 2N6275


    Original     		2N6274 2N6275 2N6277 2N6377 2N6277* POWER32 TIP73B TIP74 2SA1046 2N6275 equivalent BU108 TR TIP2955 MOTOROLA 2N6277 BU806 Complement BU326 BU100 PDF

    b2045

    Abstract: b2045 aka Single Schottky diode b2045 MBR2045CT equivalent b2045AKA mbr2045ct 2N6277 equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka
    Text: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT B2045 2N2222 2N6277 1N5817 b2045 b2045 aka Single Schottky diode b2045 MBR2045CT equivalent b2045AKA mbr2045ct 2N6277 equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka PDF

    b2045

    Abstract: b2045 aka Single Schottky diode b2045 2N6277 equivalent B2045 diode mbr2045ct MBR2045CT equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka
    Text: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT B2045 2N2222 2N6277 1N5817 b2045 b2045 aka Single Schottky diode b2045 2N6277 equivalent B2045 diode mbr2045ct MBR2045CT equivalent diode mbr2045ct SCHOTTKY BARRIER RECTIFIER aka PDF

    diode b1035

    Abstract: B1035 b1045 diode B1045 TO-220 b1045 diode b1045 B1045 equivalent 2N6277 equivalent
    Text: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features: • • • • Guardring for Stress Protection


    Original     		MBR1035, MBR1045 MBR1045 B1035, B1045 2N2222 2N6277 1N5817 diode b1035 B1035 b1045 diode B1045 TO-220 b1045 diode b1045 B1045 equivalent 2N6277 equivalent PDF

    mbr1045

    Abstract: 2N6277 equivalent MBR1035 MBR1035G
    Text: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers The MBR1035/45 uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features •


    Original     		MBR1035, MBR1045 MBR1045 MBR1035/45 2N6277 1N5817 2N2222 2N6277 equivalent MBR1035 MBR1035G PDF

    b2045

    Abstract: B2035 B2045 motorola MBR2045CT equivalent MBR2035CT B2045* Motorola rectifier 300 amp 1N5817 2N2222 2N6277
    Text: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:


    Original     		MBR2035CT/D MBR2035CT MBR2045CT MBR2045CT b2045 B2035 B2045 motorola MBR2045CT equivalent MBR2035CT B2045* Motorola rectifier 300 amp 1N5817 2N2222 2N6277 PDF

    MBR2045CTG

    Abstract: MBR2045CT equivalent MBR2045CT 1N5817 2N2222 2N6277
    Text: MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*


    Original     		MBR2045CT 260aws MBR2045CT/D MBR2045CTG MBR2045CT equivalent MBR2045CT 1N5817 2N2222 2N6277 PDF

    MBR2045CTG

    Abstract: 2N6277 equivalent MBR2045CT 1N5817 2N2222 2N6277 C2826 SCHOTTKY BARRIER RECTIFIER aka MBR2045CT equivalent
    Text: MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*


    Original     		MBR2045CT 260aws MBR2045CT/D MBR2045CTG 2N6277 equivalent MBR2045CT 1N5817 2N2222 2N6277 C2826 SCHOTTKY BARRIER RECTIFIER aka MBR2045CT equivalent PDF

    b2045

    Abstract: Single Schottky diode b2045
    Text: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT B2045 r14525 MBR2045CT/D b2045 Single Schottky diode b2045 PDF

    b1045 diode

    Abstract: B1045 diode b1035 B1035 Motorola B1045 diode b1045 2N2222 motorola 1N5817 2N2222 2N6277
    Text: MOTOROLA Order this document by MBR1035/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR1035 MBR1045 . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features:


    Original     		MBR1035/D MBR1035 MBR1045 MBR1045 RectifierMBR1035/D b1045 diode B1045 diode b1035 B1035 Motorola B1045 diode b1045 2N2222 motorola 1N5817 2N2222 2N6277 PDF

    2N2222

    Abstract: MBR2045CTG 2n6277 pin out diagram
    Text: MBR2045CT SWITCHMODEt Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*


    Original     		MBR2045CT MBR2045CT/D 2N2222 MBR2045CTG 2n6277 pin out diagram PDF

    MBR2045G

    Abstract: MBR2045 equivalent 2N2222 MBR2045
    Text: MBR2045CT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • http://onsemi.com Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT MBR2045CT/D MBR2045G MBR2045 equivalent 2N2222 MBR2045 PDF

    b2045

    Abstract: b2045 aka b2045AKA Single Schottky diode b2045 diode mbr2045ct 1N5817 2N2222 2N6277 MBR2045CT
    Text: MBR2045CT Preferred Device SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT B2045 r14525 MBR2045CT/D b2045 b2045 aka b2045AKA Single Schottky diode b2045 diode mbr2045ct 1N5817 2N2222 2N6277 MBR2045CT PDF

    MBR2045G

    Abstract: MBR2045CTG MBR2045 equivalent 1N5817 2N2222 2N6277 MBR2045 MBR2045CT
    Text: MBR2045CT Preferred Device SWITCHMODEt Power Rectifier These state−of−the−art devices use the Schottky Barrier principle with a platinum barrier metal. Features • • • • • http://onsemi.com Guardring for Stress Protection Low Forward Voltage


    Original     		MBR2045CT MBR2045CT/D MBR2045G MBR2045CTG MBR2045 equivalent 1N5817 2N2222 2N6277 MBR2045 MBR2045CT PDF

    MBR1035 MBR1045

    Abstract: 2N2222
    Text: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers The MBR1035/45 uses the Schottky Barrier principle with a platinum barrier metal. These state−of−the−art devices have the following features: http://onsemi.com Features •


    Original     		MBR1035, MBR1045 MBR1045 MBR1035/45 MBR1035/D MBR1035 MBR1045 2N2222 PDF

    B1045 TO-220

    Abstract: B1045 B1035 diode b1035 b1045 diode diode b1045 MBR1035 B1045-1 2N2222 2N6277
    Text: MBR1035, MBR1045 MBR1045 is a Preferred Device SWITCHMODE Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • • • • Guardring for Stress Protection


    Original     		MBR1035, MBR1045 MBR1045 r14525 MBR1035/D B1045 TO-220 B1045 B1035 diode b1035 b1045 diode diode b1045 MBR1035 B1045-1 2N2222 2N6277 PDF

    B2045G

    Abstract: B2045
    Text: MBR2045CT, MBRF2045CT SWITCHMODE] Power Rectifier Features and Benefits • • • • • • Low Forward Voltage Low Power Loss / High Efficiency High Surge Capacity 175°C Operating Junction Temperature 20 A Total 10 A Per Diode Leg Pb−Free Package is Available*


    Original     		MBR2045CT, MBRF2045CT MBR2045CT/D B2045G B2045 PDF

    soc 117a

    Abstract: 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3
    Text: Contran [^ ©tUKSTT © Ä¥ÄIL MEDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP NUMBER IMPIM EPITAXIAL PLANAR POWER TRANSISTOR* (FORMERLY 79 ¿1 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver" also available)


    OCR Scan     		305mm) soc 117a 2N6277 equivalent 2N6215 2N6277 2N6279 SDT79823 POWER TRANSISTOR PNP 20a 80v TO-3 PDF

    2N6277 equivalent

    Abstract: Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279
    Text: SOLITRO N DEVICES INC TS DEyfl3bflb0a OOOSfiS^ Q f ° [FIEiODOJ ? ©ATM. ® Devices. Inc. M EDIUM TO HIGH VOLTAGE, FAST SWITCHING CHIP N U M BER N PN EPITAXIAL PLANAR POWER TRANSISTOR* FORMERLY 79) CONTACT METALLIZATION B ase and emitter: > 50,000 A Aluminum


    OCR Scan     		305mm) a2N6279, SDT79823, 2N6215 2N6277 equivalent Transistor PnP 200V 20A Solitron Devices SOLITRON 179 2N6279 PDF

    BR2045CT

    Abstract: b2045 B2045 motorola BR2035CT B2045* Motorola B2035 Single Schottky diode b2045 MBR2035CT MBR2045CT equivalent
    Text: MOTOROLA Order this document by MBR2035CT/D SEMICONDUCTOR TECHNICAL DATA SWITCHMODE Power Rectifiers MBR2035CT MBR2045CT . . using the Schottky Barrier principle with a platinum barrier metal. These state-of-the-art devices have the following features:


    OCR Scan     		MBR2035CT/D MBR2035CT MBR2045CT 2045CT BR2045CT b2045 B2045 motorola BR2035CT B2045* Motorola B2035 Single Schottky diode b2045 MBR2045CT equivalent PDF