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    2N6437 Price and Stock

    Microchip Technology Inc 2N6437

    TRANS PNP 100V 25A TO3
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    Microchip Technology Inc JANTV2N6437

    POWER BJT
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    Microchip Technology Inc JANTX2N6437

    Transistor GP BJT PNP 100V 25A 2-Pin TO-3 - Trays (Alt: 2N6437JANTX)
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    VPT Components JANTX2N6437

    Trans GP BJT PNP 100V 25A 3-Pin(2+Tab) TO-3 - Bulk (Alt: JANTX2N6437)
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    Microchip Technology Inc JANTXV2N6437

    Trans GP BJT PNP 120V 25A 2-Pin TO-3 - Bulk (Alt: JANTXV2N6437)
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    2N6437 Datasheets (31)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6437 Motorola 25A POWER TRANSISTOR PNP SILICON 100V 200W Original PDF
    2N6437 On Semiconductor High-Power PNP Silicon Transistor Original PDF
    2N6437 Semelab High Power PNP Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Original PDF
    2N6437 Boca Semiconductor HIGH-POWER PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6437 General Transistor Power Transistor Selection Guide Scan PDF
    2N6437 Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
    2N6437 Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
    2N6437 Motorola European Master Selection Guide 1986 Scan PDF
    2N6437 Motorola Power Transistor Selection Guide Scan PDF
    2N6437 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6437 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6437 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6437 Unknown Transistor Replacements Scan PDF
    2N6437 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6437 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6437 Unknown Shortform Transistor Datasheet Guide Short Form PDF
    2N6437 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6437 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6437 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6437 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    2N6437 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Text: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


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    2N6437 2N6438 2N6339 2N6341 204AA r14525 2N6437/D 2N6437 2N6341 2N6438 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6437+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2N6437 Freq40M time300n PDF

    2n6436

    Abstract: 2N6438
    Text: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)


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    2N6436 2N6437 2N6438 2N6438 PDF

    2N6436

    Abstract: 2N6437 2N6438
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    2N6436 2N6437 2N6438 O-204AA) 2N6436= 2N6436 2N6437 2N6438 PDF

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Text: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


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    2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N6438 2N6341 PDF

    2N6437

    Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors
    Text: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS


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    2N6436 2N6437 2N6438 2N6338 2N6341 2N6436 2N6437 2N643current 2N6438 2n6438a 2N6341 power transistors PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6437 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2N6437 Freq40M time300n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6437+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


    Original
    2N6437 Freq40M time300n PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    2N6436 2N6437 2N6438 O-204AA) PDF

    power BJT pnp

    Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
    Text: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W


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    1998/Winter O-254' 2N6338 2N6437 PP6338M PP6437M 2500mA) 2N7272 FRL9130D power BJT pnp JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372 PDF

    2N6436

    Abstract: 2N6437 2N6438
    Text: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    2N6436 2N6437 2N6438 O-204AA) 2N6436 2N6437 2N6438 PDF

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


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    2N6436 2N6437 2N6438 2N6338 2N6341 2N6438* Devi32 TIP73B 2SC124 BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100 PDF

    2N6436

    Abstract: 2N6338 2N6341 2N6437 2N6438 MBR745 motorola mbr745
    Text: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


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    2N6436/D 2N6436 2N6437 2N6438* 2N6438 2N6338 2N6341 2N6436/D* 2N6436 2N6341 2N6437 2N6438 MBR745 motorola mbr745 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N6437+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2N6437 Freq40M time300n PDF

    2N6339

    Abstract: 2N6341 2N6437 2N6438 MBR745 TRANSISTOR DATA
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *Motorola Preferred Device • High Collector–Emitter Sustaining Voltage —


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    2N6437/D 2N6437 2N6438* 2N6438 2N6339 2N6341 2N6341 2N6437 2N6438 MBR745 TRANSISTOR DATA PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B PDF

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251 PDF

    High voltage fast switching power transistor pnp

    Abstract: 2N6438 2n6437
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan
    2N6437/D 2N6437 2N6438 2N6339 2N6341 High voltage fast switching power transistor pnp 2N6438 2n6437 PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N 6438* High-Power PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry power am plifier and sw itching circuit applications. • • • • • High C ollector-Em itter Sustaining Voltage —


    OCR Scan
    2N6437/D 2N6437 2N6438 2N6339 2N6341 2N6437 O-204AA PDF

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Text: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 2N6437 2N6437 2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan
    PNP-11 23741 PPC 2n5683 JANTX2N6379 JANTX2N6437 PDF

    5005K

    Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
    Text: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437


    OCR Scan
    2N6385 lk-20k 2N6394 750-18k 2N6395 2N6408 2N6414 2N6420 10min 5005K 2N6575 2N6587 2N65 2N6534 2N6583 NPN 1K PDF

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Text: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


    OCR Scan
    2N6338 2N6340 2N6436 2N6437 2N6438 VCC-80V 2N6340 PDF

    Untitled

    Abstract: No abstract text available
    Text: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542


    OCR Scan
    2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 PDF

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Text: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


    OCR Scan
    MPSU10 MPSU02 MPSU03 MPSU04 MPSU01 MPSU01A MPSU45# MPSU60 MPSU52 MPSU51 transistor buv18a motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference" PDF