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    2N6491 POWER CIRCUIT Search Results

    2N6491 POWER CIRCUIT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2N6491 POWER CIRCUIT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6488G

    Abstract: 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487 2N6488
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE


    Original     		PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6488 2N6491 2N6490 2N6488G 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487

    2N6488G

    Abstract: 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6488 2N6490 2N6490G 2N6491 MSD6100
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE


    Original     		PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6488 2N6491 2N6490 2N6488G 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6490 2N6490G MSD6100

    Untitled

    Abstract: No abstract text available
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6490 220AB 2N6487/D

    2N6488G

    Abstract: No abstract text available
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6490 2N6491 O-220AB 2N6488G

    Untitled

    Abstract: No abstract text available
    Text: 2N6487, 2N6488 NPN , 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • • • • 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


    Original     		PDF 2N6487, 2N6488 2N6490, 2N6491 O-220 2N6490 2N6488, 2N6491

    2N6488 MOTOROLA

    Abstract: 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —


    Original     		PDF 2N6487/D 2N6487 2N6488* 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6491 MOTOROLA 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2N6488 MOTOROLA

    Abstract: 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100
    Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488 * PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes —


    Original     		PDF 2N6487/D 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB 2N6488 MOTOROLA 2N6487 1N5825 2N6488 2N6490 2N6491 MSD6100

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB r14525 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2N6488 power amplifier circuit

    Abstract: 2n6488
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general−purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6487, 2N6490 2N6488, 2N6491 O-220AB 2N6490 2N6491* 2N6488 power amplifier circuit 2n6488

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB r14525 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2SB631

    Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc


    Original     		PDF 2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * . . . designed for use in general−purpose amplifier and switching applications. PNP 2N6490 • DC Current Gain Specified to 15 Amperes — • • • w 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 O-220AB 2N6487/D 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2N6491

    Abstract: 2n6488 2N6487 1N5825 2N6490 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * . . . designed for use in general−purpose amplifier and switching applications. PNP 2N6490 • DC Current Gain Specified to 15 Amperes — • • • w 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


    Original     		PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 O-220AB 2N6487/D 2N6491 2n6488 2N6487 1N5825 2N6490 MSD6100

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BU108

    Abstract: BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BU522B High Voltage Silicon Power Darlingtons 7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage:


    Original     		PDF BU522B TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 BC337 circuit example BC337 rbe BDX54 replacement transistor BC337 BU326 BU100 MOTOROLA 2N3773

    2N8491

    Abstract: 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490
    Text: f ' G E SOLIP STATE 3875081 □ 1 DE I3fl7S0fll 00174S0 E G E SOLID STATE 0 7 È ~ 1 7 4 5 Ò -D T '? ? '/ * G eneral-Purpose Power ' - — 3 2 > '< z / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491


    OCR Scan     		PDF 00174S0 ---01M7450--D 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 RCA-2N6486â 2N6491 2N8491 2N648B 2N6491 equivalent TA8327 equivalent 2n6488 tektronix 454 TA8328 2n8491t 2N6486 equivalent 2n6490

    2n6489

    Abstract: 2N6488 power amplifier circuit
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 HARRI S SEniCOND SECTOR SbE D • File Number 4302271 üü40Sbb 678 4Tfl H H A S 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications


    OCR Scan     		PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 40Sbb RCA-2N6486-- 2n6489 2N6488 power amplifier circuit

    Untitled

    Abstract: No abstract text available
    Text: 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 File N um ber 678 15-A, 75-W, Silicon N-P-N and P-N-P Epitaxial-Base VERSAWATT Transistors Complementary Pairs for General-Purpose Switching and Amplifier Applications Features: • M a x im u m sa fe -a re a -o f-o p e ra tio n curves


    OCR Scan     		PDF 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491

    2N6488 MOTOROLA

    Abstract: 2N6488 power amplifier circuit 2N0491 2N8487 2N6487 2N0490
    Text: M OTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon Plastic Power Transistors 2N 6488* PNP . . designed for use in general-purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hpE = 20-150 @ lc » 5.0 Adc


    OCR Scan     		PDF 2N6487 2N6490 2N6488 2N6491 T0-220AB 2N6490 2N6487, 2N6488 MOTOROLA 2N6488 power amplifier circuit 2N0491 2N8487 2N0490

    2N6489 RCA

    Abstract: 2N6490 RCA RCA 2N SOLID STATE TRANSISTORS 2N6488 power amplifier circuit 2n6489
    Text: G E SO LI» STATE 3875081 CÌ E □1 SOLID DE I 3 f l 7 S 0 f l l STATE 00174S0 E O T T T t Ï S Ô - D ~ ' f ' ? ? - / 3 G en eral-P u rp ose P ow er T ran sisto rs_ —* ' * * •"T - 3 -3 * ^ ? / 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491


    OCR Scan     		PDF 00174S0 2N6486, 2N6487, 2N6488, 2N6489, 2N6490, 2N6491 RCA-2N6486--2N6491 2N6489 RCA 2N6490 RCA RCA 2N SOLID STATE TRANSISTORS 2N6488 power amplifier circuit 2n6489

    4902N

    Abstract: 2N64
    Text: MOTOROLA Order this document by 2N6487/D SEMICONDUCTOR TECHNICAL DATA NPN 2N 64 87 Com plem entary Silicon Plastic Power Transistors 2 N6 4 8 8 * PNP . . . designed for use in general-purpose amplifier and switching applications. • • • • 2 N 6 4 90


    OCR Scan     		PDF 2N6487/D 2N6487, 2N6490 2N6488, 2N6491 -220A 21A-06 O-220AB 4902N 2N64

    2N6488 MOTOROLA

    Abstract: 1N5825 221A-06 2N6487 2N6488 2N6490 2N6491 2N6497 MSD6100 ISS-20
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N 6487 Com plem entary Silicon P lastic Power Transistors 2N 6488* PNP . . . designed for use in general-purpose amplifier and switching applications. 2N 6490 2 N6491* • DC Current Gain Specified to 15 Amperes —


    OCR Scan     		PDF 2N6487 2N6490 2N6488 2N6491 O-220AB 2N6490 2N6491 2N6488 MOTOROLA 1N5825 221A-06 2N6497 MSD6100 ISS-20

    2N6476 JAN

    Abstract: 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . . P f to 2 00 W . . . VCE to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 2N6476 JAN 2N6180 40817 TA8662 2N5781 2N5954 2N6107 2N6248 TO220I 2N6372

    300W TRANSISTOR AUDIO AMPLIFIER

    Abstract: 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292
    Text: EPITAXIAL-BASE N-P-N & P-N-P POWER TYPES 1C to 15 A . . P f to 200 W . . . V C E to 125 V 1« “ - 3 .5 max. Py«10W m ax. ITO-3SI I{ > 8 A max. Py * 40 W max. T O -6 6 * lc * - 6 A max. Py - 40 W max. 1TO -66)* le « 7 A max. Py - 40 W max. VERSA W ATT


    OCR Scan     		PDF IT039I O-2201 lc-15 ITO-31 O-2201 90x90 300W TRANSISTOR AUDIO AMPLIFIER 40360 2N6289 40877 BD243 2N5781 2N5954 2N6107 2N6248 2N6292