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    2N6491 POWER CIRCUIT OTHER PART NUMBER Search Results

    2N6491 POWER CIRCUIT OTHER PART NUMBER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP2701 Toshiba Electronic Devices & Storage Corporation Photocoupler (photo-IC output), 5000 Vrms, 4pin SO6L Visit Toshiba Electronic Devices & Storage Corporation
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NA Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Auto-retry, WSON10B Visit Toshiba Electronic Devices & Storage Corporation
    TCKE800NL Toshiba Electronic Devices & Storage Corporation eFuse IC (electronic Fuse), 4.4 to 18 V, 5.0 A, Latch, WSON10B Visit Toshiba Electronic Devices & Storage Corporation

    2N6491 POWER CIRCUIT OTHER PART NUMBER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6488G

    Abstract: 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6488 2N6490 2N6490G 2N6491 MSD6100
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general-purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE


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    PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6488 2N6491 2N6490 2N6488G 2N6491 power circuit other part number 1N5825 2N6487 2N6487G 2N6490 2N6490G MSD6100

    Untitled

    Abstract: No abstract text available
    Text: 2N6487, 2N6488 NPN , 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. Features • • • • 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


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    PDF 2N6487, 2N6488 2N6490, 2N6491 O-220 2N6490 2N6488, 2N6491

    Untitled

    Abstract: No abstract text available
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


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    PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6490 220AB 2N6487/D

    2N6488G

    Abstract: No abstract text available
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS


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    PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6490 2N6491 O-220AB 2N6488G

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc


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    PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB r14525 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * . . . designed for use in general−purpose amplifier and switching applications. PNP 2N6490 • DC Current Gain Specified to 15 Amperes — • • • w 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


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    PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 O-220AB 2N6487/D 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2N6491

    Abstract: 2n6488 2N6487 1N5825 2N6490 MSD6100
    Text: ON Semiconductor NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * . . . designed for use in general−purpose amplifier and switching applications. PNP 2N6490 • DC Current Gain Specified to 15 Amperes — • • • w 2N6491* hFE = 20 −150 @ IC = 5.0 Adc


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    PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 O-220AB 2N6487/D 2N6491 2n6488 2N6487 1N5825 2N6490 MSD6100

    1N5825

    Abstract: 2N6487 2N6488 2N6490 2N6491 MSD6100
    Text: ON Semiconductort NPN Complementary Silicon Plastic Power Transistors 2N6487 2N6488 * PNP . . . designed for use in general–purpose amplifier and switching applications. 2N6490 • DC Current Gain Specified to 15 Amperes — • • • 2N6491* hFE = 20–150 @ IC = 5.0 Adc


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    PDF 2N6487 2N6488 2N6490 2N6491* 2N6487, 2N6488, 2N6491 220AB r14525 1N5825 2N6487 2N6488 2N6490 2N6491 MSD6100

    2N6488G

    Abstract: 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487 2N6488
    Text: 2N6487, 2N6488, NPN 2N6490, 2N6491 (PNP) 2N6488 and 2N6491 are Preferred Devices Complementary Silicon Plastic Power Transistors These devices are designed for use in general−purpose amplifier and switching applications. http://onsemi.com Features 15 AMPERE


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    PDF 2N6487, 2N6488, 2N6490, 2N6491 2N6488 2N6491 2N6490 2N6488G 2N6487G AYWW marking code IC complementary npn-pnp 2N6491 power circuit marking code SUs 15 pnp power 1N5825 2N6487

    2SB631

    Abstract: equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N6487 2N6488* PNP 2N6490 2N6491* Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. • DC Current Gain Specified to 15 Amperes — hFE = 20 – 150 @ IC = 5.0 Adc


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    PDF 2N6487, 2N6490 2N6488, 2N6491 220AB 2N6487 2N6488* 2N6491* TIP73B 2SB631 equivalent 2n6488 BU108 2SA1046 2SC2233 2N6488 MOTOROLA Motorola 3-351 BU326 BU100

    TIP42C as regulator

    Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems


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    PDF MJE1123 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C TIP42C as regulator BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


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    PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    bd249c equivalent

    Abstract: MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE5730 MJE5731 MJE5731A High Voltage PNP Silicon Power Transistors . . . designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. • • • • 1.0 AMPERE


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    PDF TIP47 TIP50 MJE5730 MJE5731 MJE5731A TIP73B TIP74 TIP74A TIP74B TIP75 bd249c equivalent MJ15003 300 watts amplifier BU108 mje13009 equivalent BDX54 bd139 equivalent transistor Motorola case 77 tip122 D-PAK package 2SB56 BU326

    TIP48 NPN

    Abstract: BU108 BU326 BU100 BD801
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TIP47 * TIP49* TIP48 * TIP50* High Voltage NPN Silicon Power Transistors . . . designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. *Motorola Preferred Device


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    PDF TIP47 TIP49* TIP48 TIP50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP48 NPN BU108 BU326 BU100 BD801

    sec tip41c

    Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power


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    PDF MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943

    tip122 tip127 audio amp

    Abstract: BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJ3281A* PNP MJ1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 250 WATTS The MJ3281A and MJ1302A are PowerBase power transistors for high power


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    PDF MJ3281A MJ1302A MJ3281A* MJ1302A* 204AA TIP73B TIP74 TIP74A TIP74B TIP75 tip122 tip127 audio amp BU108 K 3569 D44H1 tip120 MJ1302A equivalent 2SB595 BDX54 BU326 BU100

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


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    PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    MJ15015 TRANSISTOR REPLACEMENT GUIDE

    Abstract: MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 2N3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon High-Power Transistors 2N3055A MJ15015* . . . PowerBase complementary transistors designed for high power audio, stepping motor and other linear applications. These devices can also be used in power


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    PDF 2N3055 MJ2955. 2N3055A MJ15015* MJ2955A MJ15016* TIP73B TIP74 TIP74A TIP74B MJ15015 TRANSISTOR REPLACEMENT GUIDE MJ15015 equivalent MJ2955 replacement 2N3055A 2n3055 BU108 tr bc 338 MJ15015 parts 2SB75 2SC1051

    mj15003 equivalent

    Abstract: 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 MJ15004 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Complementary Silicon Power Transistors MJ15003* PNP MJ15004* The MJ15003 and MJ15004 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. • High Safe Operating Area 100% Tested —


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    PDF MJ15003 MJ15004 MJ15003* MJ15004* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A mj15003 equivalent 2n3055 MJ15003 2N3055 BU108 motorola MJ15003 BDX54 BU326 BU100

    2SC1943

    Abstract: 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN Advance Information Complementary Silicon Power Transistors The MJ15011 and MJ15012 are PowerBase power transistors designed for high–power audio, disk head positioners, and other linear applications. These devices


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    PDF MJ15011 MJ15012 MJ15011* MJ15012* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A 2SC1943 2n5037 2SC2322 2sa1046 bd349 bD127 BUV18A 2SC1903 mje5195 2SD341

    BU108

    Abstract: MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N3773* Complementary Silicon Power Transistors The 2N3773 and 2N6609 are PowerBase power transistors designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as relay or solenoid drivers, dc to dc


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    PDF 2N3773 2N6609 2N3773* 2N6609 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 MJE104 MJ1000 2SD424 2SD423 2sc2371 complementary BU208 MJE2482 2SD675 2SC1419

    mje15033 replacement

    Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.


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    PDF 2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144

    c 3421 transistor

    Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability


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    PDF BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA

    BU108

    Abstract: BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Power Transistors DPAK For Surface Mount Applications *Motorola Preferred Device Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications. • •


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    PDF TIP47, TIP50 MJD47* MJD50* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BU108 BU326 BU100