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    2N6548 POWER Search Results

    2N6548 POWER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    2N6548 POWER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6549

    Abstract: 2N6548 power W5040 TO202
    Text: 2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6548 series types are NPN silicon Darlington transistors designed for amplifier and driver applications where high gain at a high collector current is important.


    Original     		PDF 2N6548 2N6549 O-202 200mA 500mA 200mA, 100MHz 2N6548 power W5040 TO202

    2N6555

    Abstract: U45 semiconductor cen 30 CEN-U60 CEN-U45 2N6548 power 2n6549 TO-202 transistor 2N6548 2N6551
    Text: Power Transistors TO-202 Case TYPE NO. NPN IC A PNP 2N6548 MAX 2.0 2N6549 PD (W) 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    Original     		PDF O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U01A 2N6555 U45 semiconductor cen 30 CEN-U60 CEN-U45 2N6548 power 2n6549 TO-202 transistor 2N6548 2N6551

    CEN-U07

    Abstract: CEN-U56 2n6555 TO-202-2 transistor cen-u07 equivalent CEN-U45 2N6556 2N6549 2N6551 2N6553
    Text: Power Transistors TO-202 Case TYPE NO. NPN PNP 2N6548 IC A PD (W) MAX 2.0 2N6549 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    Original     		PDF O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U01A CEN-U07 CEN-U56 2n6555 TO-202-2 transistor cen-u07 equivalent CEN-U45 2N6556 2N6549 2N6551 2N6553

    2N6805

    Abstract: 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525
    Text: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 >= 30 Rohm Co Ltd Rohm Corp Rohm Corp Rohm Co Ltd Sanyo Elect Semelab Semelab Semelab Semelab Semelab ~MLt;9t;U1 ~melaD SML3501 SML3505 SML3509 SML3513 2N3205 2N3208 SOT3552 SOT3552 SOT3552 Semelab


    Original     		PDF 2S81188 2S8891 2S8632K SML3552 SML3575 SML3578 SML69501 SML69509 2N6805 2N6456 2N6803 20C36 2NJ771 RCA 2n6674 20C84 2N6617 2NJ771A 2N6525

    1N4548

    Abstract: 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428
    Text: Discrete POWER & Signal Technologies Diode Cross-Reference Guide Industry Part Number 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N114 1N115 1N116 1N116A 1N117 1N1170 1N117A 1N118 1N118A 1N119 1N120 1N126 1N126A 1N127 1N127A 1N128 1N128A


    Original     		PDF 1N100 1N100A 1N101 1N102 1N103 1N104 1N108 1N111 1N112 1N113 1N4548 1N4008 Diode 1N4008 1N4008 diode 1N1744A 1n4148 1N523b 2N4418 BAX15 1n5428

    5953-0406E

    Abstract: IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 HCPL-3700 IC 7414 datasheet working of ic 7414 MC6821
    Text: Threshold Sensing for Industrial Control Systems with the HCPL-3700 Interface Optocoupler Application Note 1004 Introduction The use of electronic logic circuitry in most applications outside of a controlled environment very quickly brings the design engineer into contact with the problems


    Original     		PDF HCPL-3700 HCPL-3700 5953-0406E IC 7414 not gate with schmitt trigger OPTOCOUPLER 3700 optocoupler with schmitt trigger input optocoupler PC 187 HCPL-3700 Application note 1004 IC 7414 datasheet working of ic 7414 MC6821

    2N5657 equivalent

    Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.


    Original     		PDF 2N5655 2N5656 2N5657 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2N5657 equivalent 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes

    MJE494

    Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS


    Original     		PDF BD157 BD158 BD159 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B MJE494 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037

    2SD669 equivalent

    Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc


    Original     		PDF 2N6609 2N3773) 2N6667 2N6668 220AB 2N6387, 2N6388 2SD669 equivalent BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544

    2SC495

    Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink


    Original     		PDF MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar

    mje521 equivalent

    Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry


    Original     		PDF MJE521 MJE371 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C mje521 equivalent BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100

    2N3055

    Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes


    Original     		PDF MJE2955T MJE3055T TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N3055 BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64

    2N5631 equivalent

    Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —


    Original     		PDF 2N5630, 2N6030 2N5631, 2N6031 2N5630 2N5631 2N5631 equivalent 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator

    BD179-10 equivalent

    Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.


    Original     		PDF BD179 BD180 BD179-10 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A BD179-10 equivalent BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1

    TRANSISTOR BC 384

    Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required


    Original     		PDF TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100

    MJ11017 equivalent

    Abstract: BU108 MJ11021 BU326 BU100 MJE3055T
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJ11017 MJ11021* NPN MJ11018* Complementary Darlington Silicon Power Transistors . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJ11022 • High dc Current Gain @ 10 Adc — hFE = 400 Min All Types


    Original     		PDF MJ11018, MJ11022, MJ11017 MJ11021* MJ11018* MJ11022 TIP73B TIP74 TIP74A TIP74B MJ11017 equivalent BU108 MJ11021 BU326 BU100 MJE3055T

    BU108

    Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A


    Original     		PDF BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 2N6554 2N6552 2N6555 2N6553 2N6556 CEN-U05

    IC N6555

    Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
    Text: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 N6554 2N6552 N6555 2N6553 N6556 2N6557 IC N6555 2N6549 2N6558 2n6556 2N6548

    2n6554

    Abstract: 2N6556
    Text: Power Transistors o i TO-202 Case TYPE NO. NPN PNP •c PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (mA) VCE(SAT) @ 1C 00 (A) MAX fr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 2N6552 2N6553 CEN-U05 CEN-U06 CEN-U07 CEN-U45 2n6554 2N6556

    cen-u45

    Abstract: RJP 30 D40N 2N6558 RJP 35
    Text: Power Transistors TO-202 Case TYPE NO. NPN RJP ic PD A> <W MAX BVCBO BVCEO @ Ic hFE (V) (V) MIN MIN MM MAX (mA) VCE(SAT) IC (A) (V) MAX tr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2,0 2.0 50 40 15,000 150,000 200 2.0 2.0 100


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 2N6552 2N6553 2N6557 2N6558 2N6559 2N6591 cen-u45 RJP 30 D40N RJP 35

    N6555

    Abstract: 2N6593 2n6557 2N6558 IC N6555 2N6552 to 202 case 2N6548 2N6549 2N6551
    Text: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50


    OCR Scan     		PDF O-202 2N6548 2N6549 2N6551 N6554 2N6552 N6555 2N6553 N6556 2N6557 2N6593 2n6557 2N6558 IC N6555 to 202 case 2N6548 2N6549

    t1p117

    Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
    Text: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C


    OCR Scan     		PDF 2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 D40K3 D41K3 D40K4 D41K4 t1p117 T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 2N6548

    Untitled

    Abstract: No abstract text available
    Text: 1989963 CENTRAL CENTRAL 6i r S E M IC O N D U C TO R ; t ï SEMICONDUCTOR noi 94 T-/n_?q D Ë J n f i tn t 3 D G a a im b T POWER DARLINGTON TRANSISTORS EPOXY le = OPERATING AND STO RAGE TEM PE R A T U R E -6 5 °to +150°C 2 .0 A VCE(S) @ 1C fT Min (Typ)


    OCR Scan     		PDF 2N6548 2N6549 D40K1 D41K1 D40K2 D41K2 To-126 C1000SE3 O-105 O-106