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    2N6715 Price and Stock

    onsemi 2N6715

    TRANS NPN 40V 2A TO92-3
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    DigiKey 2N6715 2,000
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    Central Semiconductor Corp 2N6715-18-TIN-LEAD

    TRANS NPN 40V 2A TO237
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    DigiKey 2N6715-18-TIN-LEAD Bulk 2,000
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    Bisco Industries 2N6715 19
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    National Semiconductor Corporation 2N6715

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    Bristol Electronics 2N6715 10
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    Quest Components 2N6715 632
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    2N6715 56
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    2N6715 8
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    Component Electronics, Inc 2N6715 401
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    2N6715 Datasheets (25)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N6715 Boca Semiconductor NPN SILICON PLANAR EPITAXIAL TRANSISTORS Original PDF
    2N6715 Central Semiconductor Power Transistor Original PDF
    2N6715 Central Semiconductor Complementary Silicon Power Transistor Original PDF
    2N6715 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    2N6715 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTORS Original PDF
    2N6715 Central Semiconductor COMPLEMENTARY SILICON POWER TRANSISTOR Scan PDF
    2N6715 Central Semiconductor Power Transistors TO-237 Case Scan PDF
    2N6715 Continental Device India TO-237 Plastic Package Transistors Scan PDF
    2N6715 Continental Device India Semiconductor Device Data Book 1996 Scan PDF
    2N6715 General Electric Power Transistor Data Book 1985 Scan PDF
    2N6715 Micro Electronics Medium Power Amps and Switches Scan PDF
    2N6715 Micro Electronics Semiconductor Device Data Book Scan PDF
    2N6715 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    2N6715 Unknown Transistor Shortform Datasheet & Cross References Scan PDF
    2N6715 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    2N6715 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    2N6715 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    2N6715 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    2N6715 National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF
    2N6715 National Semiconductor General Purpose Amplifiers and Switches Scan PDF

    2N6715 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits.


    Original
    PDF 2N6714 2N6715 2N6716 O-237 C-120

    2N6715

    Abstract: No abstract text available
    Text: 2N6715 SILICON NPN TRANSISTOR PACKAGE STYLE TO-237 DESCRIPTION: The 2N6715 is Designed for General Purpose Amplifier, and Switching Applications. MAXIMUM RATINGS IC 2.0 A VCE 40 V PDISS 2.0 W @ TC = 25 OC 0.85 W @ TA = 25 OC TJ -55 OC to +150 OC TSTG -55 OC to +150 OC


    Original
    PDF 2N6715 O-237 2N6715

    2N6715

    Abstract: 2N6714 2N6716
    Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company 2N6714 2N6715 2N6716 TO-237 Plastic Package NPN SILICON PLANAR EPITAXIAL TRANSISTORS Designed for General purpose Medium Power Amplifier and Switching Circuits. E 1 = EMITTER 2 = BASE


    Original
    PDF ISO/TS16949 2N6714 2N6715 2N6716 O-237 C-120 2N6715 2N6714 2N6716

    Untitled

    Abstract: No abstract text available
    Text: 2N6715 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)150þ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)1.0


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    PDF 2N6715 Freq50M

    2N6714

    Abstract: 2N6715
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage VCBO 2N6714 2N6715


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    PDF 2N6714 2N6715 2N6714 100mA* 100mA, 2N6715

    2N6716

    Abstract: 2N6714 2N6715 2n6715 datasheet 6716
    Text: IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer 2N6714 2N6715 2N6716 TO-237 Plastic Package Boca Semiconductor Corp. BSC http://www.bocasemi.com NPN SILICON PLANAR EPITAXIAL TRANSISTORS


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    PDF 2N6714 2N6715 2N6716 O-237 250mA, 2N6716 2N6714 2N6715 2n6715 datasheet 6716

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design Please Use ZTX449 / ZTX651 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 2N6714 2N6715 ISSUE 1 – MARCH 94 FEATURES * 40 Volt VCEO * Gain of 50 at IC= 1 Amp * Ptot= 1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.


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    PDF ZTX449 ZTX651 2N6714 2N6715 2N6715 100mA* 100mA,

    2N6714

    Abstract: 2N6715 DSA0037489 DSA003748
    Text: 2N6714 2N6715 — NPN SILICON PLANAR MEDIUM POWER TRANSISTORS 1 ISSUE 1- MARCH 94 I FEATURES vcE~ * 40 volt * Gain of 50 at Ic= 1 Amp * PTOt=1 Watt ABSOLUTE MAXIMUM PARAMETER SYMBOL — Collector-Base Voltage Collector-Emitter Emitter-Base ~ RATINGS. ‘CBO


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    PDF 2N6714 2N6715 le50mA, 2N6714 2N6715 DSA0037489 DSA003748

    2N6715

    Abstract: MPS6715 HOTS
    Text: 2N6715/PN6715/MPS6715 NATL S E M I CO ND n r Sç Cr Rh Ef T tE f DI 11E » | • bSG113D 0 2 * 5- | I . 0 3 7 2 ^QC- C Tl National Semiconductor 2N6715 t PN6715 MPS6715 J^ ^*'237 El^ "92 Bc Bc TL/G/10100-S 'OS ebc TUG/10100-1 TUG/10100-4 NPN General Purpose Amplifier


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    PDF hSG113D 2N6715 O-237 MPS6715 T0-22ME TL/G/10100-8 TUG/10100-1 TL/G/10100-4 10mAdc, 2N6715 MPS6715 HOTS

    2N6730

    Abstract: 2N6719 2N6714 2N6715 2N6716 2N6717 2N6718 2N6726 2N6727 2N6728
    Text: Power Transistors TO-237 Case Ò Z TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (mA) MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 2N6730 2N6719

    CENW64

    Abstract: 2N6714 2N6730 2N6715 2N6716 2N6717 2N6718 2N6719 2N6726 2N6727
    Text: Pow er T ran sistors TO-237 Case Z Ò TYPE ic PD A (W) BVCBO BVCEO @ h FE Ic i VCE(SAT) @ IC fT *b v c e s NPN PNP MAX (V) (V) MIN MIN MIN (V) (mA) MAX (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718 CENW64 2N6730 2N6719

    2N6715

    Abstract: No abstract text available
    Text: 2N6714 2N6715 NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ISSUE 1 - MARCH FE A T U R E S * * * 40 Volt V CE0 Gain of 50 at lc= 1 Am p P,0,= 1W att E-Line T092 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER


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    PDF 2N6714 2N6715 2N6715 100mA* 100mA

    2sc498

    Abstract: 2SC875 2SA503 2sc1175 FT501 2N6428 2SA532 2SA606 2sa708 2N6714
    Text: Medium Power Amplifiers and Switches TYPE NO. RITY HFE MAXIMUM RATINGS POLA­ CASE Pd IC VCEO mW (A) (V) min VCE(sat) fT Cob COMPLE­ min max MENTARY IC VCE max max (mA) (V) (V) (A) (MHz) (PF> TYPE . 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237


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    PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc498 2SC875 2SA503 2sc1175 FT501 2SA532 2SA606 2sa708

    2N6726

    Abstract: 2N6714 2N6727 SE192 TRANSITON
    Text: Silicon Planar Medium Power Transistors 2N6715 2N6727 NPN 2N6714 PNP 2N6726 FEATU RES • Exceptional p ow er dissipation capability -2 W @ T case = 25°C - 1 W @ T amb = 2 5 ° C • h FE specified up to 1A • L o w saturation volatages D E S C R IP T IO N


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    PDF 2N6714 2N6726 2N6715 2N6727 SE192 2N6726 2N6727 SE192 TRANSITON

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-237 Case TYPE NO. ic PD BVCBO BVCEO Ic hRE VCE SAT @ IC fT *b v c e s (A) NPN PNP m MAX (n»A) (V) (V) MIN MIN MIN MAX 00 <mA) MAX 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 2N6715 2N6727 2.0 2.0 50 40 50 250 2N6716 2N6728 2.0 2.0 60


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    PDF O-237 2N6714 2N6715 2N6716 2N6717 2N6718 2N6719 2N6720 2N6721 2N6722

    2n6700

    Abstract: 2N6718 2N6714 2N6729 2n6717 2N6715 2N6716 2N6724 2N6725 2N6726
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N 6724 2N6725 2N6716 2 N 67 1 7 2N6731 2 N 6 7 18 V cbo 2 N 6 72 6 2 N 6 72 7 — — 2 N 67 2 8 2 N 67 2 9 2 N 67 3 2 2N6730 •c V CEO M ax. V CEIsat at •c m 'c mA


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    PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 2N6718 2N6729 2N6724 2N6725

    2N6715

    Abstract: No abstract text available
    Text: 2N6715/PN6715/MPS6715 Z W A H ü National Semiconductor 2N6715 M / PN6715 T0" 257 J u B„ C MPS6715 ify T0" 92 B Z *C T L /Q /1 0 1 0 0 -8 TO• 226AE UU Bc T l/G /1 0 1 0 0 -1 T L /G /1 0 1 0 0 -4 N P N G e n e r a l P u r p o s e A m p lifie r E l e c t r ic a l C h a r a c t e r i s t i c s ta = 25°c unless otherwise noted


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    PDF 2N6715/PN6715/MPS6715 2N6715 PN6715 MPS6715 226AE 2N6715

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors TO-237 Case O Z TYPE ic PD BVCBO BVCEO @ Ic hFE VCE SAT @ IC fT * bv Ce s (A) NPN PNP (W) MAX (mA) (V) (V) MIN MIN MIN MAX (V) (mA) MAX (MHz) MIN 2N6714 2N6726 2.0 2.0 40 30 50 250 1,000 0.5 1,000 50 2N6715 2N6727 2.0 2.0 50 40 50 250 1,000


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    PDF O-237 2N6714 2N6726 2N6715 2N6727 2N6716 2N6728 2N6717 2N6729 2N6718

    2sc1175

    Abstract: 2SC875 2N6728 2SA606 2N6714 2SA532 2SA532 complementary 2sa708 2N6428 2N6715
    Text: Medium Power Amplifiers and Switches TYPE POLA­ NO. RITY CASE Pd IC mW (A) VCE(sat) HFE MAXIMUM RATINGS IC VCEO VCE (V) min max (mA) (V) . fT Cob COMPLE­ min max MENTARY (V) (A) (MHz) (PF> TYPE max 2N6428 2N6714 2N6715 2N6716 2N6726 N N N N P TO-92A TO-237


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    PDF 2N6428 O-92A 2N6714 O-237 2N6726 2N6715 2N6727 2N6716 2sc1175 2SC875 2N6728 2SA606 2SA532 2SA532 complementary 2sa708

    Untitled

    Abstract: No abstract text available
    Text: m 2N6715 \ \ SILICON NPN TRANSISTOR P A C K A G E S T Y L E T O -2 3 7 9.020 0.508 TYP. NOM. 0.108 D E S C R IP T IO N : 0.205-0.195 J (5.207-4.953) 0.185 0.175 u Mr ^ The 2 N 6 7 1 5 is Designed for General Purpose Amplifier, and Switching Applications.


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    PDF 2N6715

    2n6717

    Abstract: 2N6715 2N6716 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
    Text: I ^ m mHK• mmmm ■ m m mamm M axim um R a tin g s Type No. 2N6715 2N6716 ^œo V Min 50 60 E le c tric a l C h a ra c te ris tic s (Ta=25°C, U n le s s O th erw ise Specified) ^CM w ^C8 (A) (A) (ma) Max (V) Min (W) @Tc=25°c 'c (V) Min 40 5 0.75 1.5 0.1


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    PDF O-237 2N6715 O-237-2 2N6716 2N6717 2N6718 O-237-1 CIL2230Y 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229

    ztx614

    Abstract: 2n6718 2N6714 2N6715 2N6716 2N6717 2N6724 2N6725 2N6726 2N6727
    Text: TABLE 10: 2N6700 SERIES MEDIUM POWER TRANSISTORS Max. Cont. Max. PNP NPN 2N6714 2N6715 2N6724 2N6725 2N6716 2N6717 2N 6731 2N6718 V cbo 2N6726 2N6727 — — 2N6728 2N6729 2N6732 2N6730 •c V CEO Max. V CEIsat at •c m 'c mA V V A A V 40 50 50 60 60 80


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    PDF 2N6700 2N6714 2N6726 2N6715 2N6727 2N6724 2N6725 2N6716 2N6728 2N6717 ztx614 2n6718 2N6724 2N6725

    2N6715

    Abstract: 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229
    Text: TO-237 Plastic Package Transistors NPN Max mum Rating s Electrical Characteristics (Ta=25°C, Unless Otherwise Specified) Type ^CBO No. ^CE ^EBO (V) Min (V) Min (V) Min @Tc=25 c 50 40 5 0.75 2N6715 2N6716 2N6717 2N6718 2N6719 2N6731 2N6733 2N6734 2N6735


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    PDF O-237 2N6715 O-237-2 2N6716 2N6717 2N6718 O-237-1 CIL2328A 2N6719 2N6731 2N6733 2N6734 2N6735 CIL2229

    T0-226AE

    Abstract: 2N6717
    Text: 2N6715/MPS6715 0 1 National JSfl Semiconductor 2N6717 r M/ U MPS6717 TO-237 T L /G /1 0 1 0 0 -8 ////// T0- 226AE '•f T L /G /1 0 1 0 0 -4 NPN General Purpose Amplifier Electrical Characteristics t a = 25°c unless otherwise noted Symbol Parameter Min Max


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    PDF 2N6715/MPS6715 2N6717 MPS6717 O-237 226AE MPS6717 T0-226AE 2N6717