2N6786
Abstract: 2n6782 2N6784 JANTX MOSFET 2N6782 2N6782 JANTX DD 127 D transistor 2N6782 equivalent
Text: 2N6782, 2N6784 and 2N6786 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782, 2N6784 and 2N6786 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a low
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2N6782,
2N6784
2N6786
MIL-PRF-19500/556
2N6786
2n6782
2N6784 JANTX
MOSFET 2N6782
2N6782 JANTX
DD 127 D transistor
2N6782 equivalent
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com N-CHANNEL MOSFET Qualified per MIL-PRF-19500/556 DEVICES LEVELS 2N6784 2N6784U JAN JANTX JANTXV ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
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MIL-PRF-19500/556
2N6784
2N6784U
O-205AF
MIL-PRF-19500/556
T4-LDS-0176
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2N6784
Abstract: No abstract text available
Text: 2N6784 Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.
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2N6784
O205AF)
11-Oct-02
2N6784
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Untitled
Abstract: No abstract text available
Text: 2N6784+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)2.25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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2N6784
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Untitled
Abstract: No abstract text available
Text: 2N6784+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)2.25 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)15 Minimum Operating Temp (øC)
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2N6784
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DD 127 D TRANSISTOR
Abstract: MARKING CODE 556f 2N6782 2N6782U 2N6784 2N6786
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 26 March 1998. INCH-POUND MIL-PRF-19500/556F 24 December 1997 SUPERSEDING MIL-S-19500/556E 9 December 1994 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/556F
MIL-S-19500/556E
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U
DD 127 D TRANSISTOR
MARKING CODE 556f
2N6782
2N6782U
2N6784
2N6786
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CMF65-5.556K
Abstract: No abstract text available
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 27 March 2011. MIL-PRF-19500/556K 27 December 2010 SUPERSEDING MIL-PRF-19500/556J 16 June 2009 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/556K
MIL-PRF-19500/556J
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U,
MIL-PRF-19500.
CMF65-5.556K
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2N6782U
Abstract: 556j 2N6782 2N6784 2N6786 IRFE112 2N6782 equivalent 2N6786U
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 16 September 2009. MIL-PRF-19500/556J 16 June 2009 SUPERSEDING MIL-PRF-19500/556H 12 December 2006 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/556J
MIL-PRF-19500/556H
2N6782,
2N6782U,
2N6784,
2N6784U,
2N6786,
2N6786U,
MIL-PRF-19500.
2N6782U
556j
2N6782
2N6784
2N6786
IRFE112
2N6782 equivalent
2N6786U
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2N6786U
Abstract: No abstract text available
Text: 2N6782U, 2N6784U and 2N6786U Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET compliant Qualified per MIL-PRF-19500/556 DESCRIPTION This family of 2N6782U, 2N6784U and 2N6786U switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in thru
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2N6782U,
2N6784U
2N6786U
MIL-PRF-19500/556
2N6786U
O-205AF
2N6782,
2N6784
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Untitled
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET
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MIL-PRF-19500/556
2N6784
2N6784U
T4-LDS-0176
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2N6784
Abstract: No abstract text available
Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com Gort Road Business Park, Ennis, Co. Clare, Ireland Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 N-CHANNEL MOSFET
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MIL-PRF-19500/556
2N6784
2N6784U
T4-LDS-0176
2N6784
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2N6782 JANTX
Abstract: 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2N6796U 60022 2N7236 2n6806 jantx 2N6770 JANTX
Text: Government / Space Products Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100 Radiation-Hardened HEXFET Document # Pages Date IRH7054 90883 5 Oct-96 IRH7150 90677 13 Oct-96 IRH7250 90697 13 Oct-96 IRH7450SE
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IRH7054
Oct-96
IRH7150
IRH7250
IRH7450SE
Nov-96
IRH8054
2N6782 JANTX
2N6758 JANTX
2N6756 JANTX
2N6766 JANTX
2N6792 JANTX
2N6796U
60022
2N7236
2n6806 jantx
2N6770 JANTX
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1RF9130
Abstract: jantx2n1800 JAN2N1793 2N6849 2N1915 2n6845 563 j 400v JAN2N3095 T0-209AC IRFF9120
Text: Government/ Space Products bitematinnai ¡¡¡F te S ? H E X F E T , Mil-Qualified N-Channel Types JEDEC 2N6782 2N6784 2N6786 2N6788 2N6790 2N6792 2N6794 2N6796 2N6798 2N6800 2N6802 Part Numbers JANTX JANTX2N6782 2N6784 JANTX2N6786 JANTX2N6788 JANTX2N6790
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OCR Scan
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JANTX2N6782
JANTX2N6784
JANTX2N6786
JANTX2N6788
JANTX2N6790
JANTX2N6792
JANTX2N6794
JANTX2N6796
JANTX2N6798
JANTX2N6800
1RF9130
jantx2n1800
JAN2N1793
2N6849
2N1915
2n6845
563 j 400v
JAN2N3095
T0-209AC
IRFF9120
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2N6784
Abstract: 2n6800 LH0063 QPL-19500 2sC 1906 transistor 2N6784 JANTX
Text: Standard Power MOSFETs File N um ber 2N6784 1906 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor N-CHANNEL ENHANCEMENT MODE 2.25A, 200V fD S o n = 1.50 Features: • SOA is power-dissipatiort limited m Nanosecond switching speeds
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OCR Scan
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2N6784
2N6784
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
2sC 1906 transistor
2N6784 JANTX
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406J
Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Text: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC
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OCR Scan
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2N6756
2N6758
2N6760
2N6762
2N6768
2N6770
IRFC130
IRFC230
IRFC330
IRFC430
406J
JD 1801
IRFC9230
IRFC110
2N6847
irfc250
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2N6901 JANTX
Abstract: 2N6901 2N6901 JANTXV 2N6901 JANTX harris 2n6898 transistor h44 2n6800 2N6897 JANTXV 2N6897
Text: Logic-Level Power MOSFETs File Number 2N6901 1877 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 1.4 fi Feature*: • Design optimized for 5-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits ■ Compatible with automotive drive requirements
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OCR Scan
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2N6901
2N6901
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6901 JANTX
2N6901 JANTXV
2N6901 JANTX harris
2n6898
transistor h44
2N6897 JANTXV
2N6897
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2N6155
Abstract: 2n6156 qpl-19500 2N6756 2N6901 D-05N md-141 2N6755 2N67 2N6756 JANTX
Text: Standard Power MOSFETs 2N6755, 2N6756 File Number 1586 Power MOS Field-Effect Transistors N-Channel Enhancernent-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 12A and 14A, 6 0 V -1 0 0 V rDs on = 0.18 fi and 0.25 fl Features: • SOA is power-dissipation limited
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OCR Scan
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2N6755,
2N6756
0V-100V
2N6755
2N6756
2N6796
O-2I35AF
O-205AF
2N6800
2N6155
2n6156
qpl-19500
2N6901
D-05N
md-141
2N67
2N6756 JANTX
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QPL-19500
Abstract: 2N6903 2n6901 2N6758 JANTX 2N6903 JANTX 2N6898 JANTX 2N6898 2N6756 2N6758 2N6760
Text: Logic-Level Power MOSFETs File Number 2N6903 1879 N-Channel Logic Level Power MOS Field-Effect Transistors L2FET rDs(on): 3.65 O N-CHANNEL ENHANCEMENT MODE Features: • Design optimized for S-voit gate drive ■ Can be driven directly from QMOS, NMOS, TTL circuits
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OCR Scan
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2N6903
2N6903
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
QPL-19500
2n6901
2N6758 JANTX
2N6903 JANTX
2N6898 JANTX
2N6898
2N6756
2N6758
2N6760
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2N6898 JANTX
Abstract: 2N6898 2N6898 JANTXV TRANSISTOR C 557 B QPL-19500
Text: Standard Power MOSFETs File Number 2N6898 1876 Power MOS Field-Effect Transistors P-Channel Enhancement-Mode Power MOS Field-Effect Transistors 25 A, -1 0 0 V rDs on : 0.20 Cl TERMINAL DIAGRAM Features: • SOA is power-dissipation lim ited ■ Nanosecond switching speeds
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OCR Scan
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2N6898
2N6898
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898 JANTX
2N6898 JANTXV
TRANSISTOR C 557 B
QPL-19500
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PDF
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2N6898
Abstract: 2N6897 36485 2N6798 TRANSISTOR C 557 B 2n6800 2N6901 IDM30 2N6904 qpl-19500
Text: Standard Power M O SFETs File Number 1875 2N6897 Power M O S Field-Effect Transistors P-Channei Enhancement-Mode Power M O S Field-Effect Transistors 12 A, 100 V ros on : 0.3 0 TERMINAL DIAGRAM 3 o Features: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds
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OCR Scan
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2N6897
2N6897
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6898
36485
2N6798
TRANSISTOR C 557 B
2N6901
IDM30
2N6904
qpl-19500
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PDF
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2N6758
Abstract: 2N6902 QPL-19500
Text: Logic-Level Power MOSFETs File Number 2N6902 1878 N-Channel Logic Level Power MOS Field-Effect Transistors L2 FET 12 A, 100 V rDs(on): 0.2 fi N-CHANNEL. ENHANCEMENT MODE Features: • Design optimized for 5 volt gate drive • Can be driven directly from Q-MOS,
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OCR Scan
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2N6902
92cs-3374i
2N6902
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
2N6758
QPL-19500
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PDF
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2N6782
Abstract: 2n6800 LH0063 QPL-19500
Text: Standard Power MOSFETs 2N6782 File Number 1592 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE 3.5A, 100V ro s o n = 0 .6 O Features: • SOA is power-dissipation limited ■ Nanosecond switching speeds
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OCR Scan
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2N6782
2N6782
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
LH0063
QPL-19500
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PDF
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2N6792 JANTX
Abstract: 2N6792 2n6800 C055 LH0063 QPL-19500 2N6904
Text: Standard Power MOSFETs File N u m be r 1901 2N6792 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistors 2 A, 400V T oS lon = 1 80 N-CHANNEL ENHANCEMENT MODE D Features: • SOA is power-dissipation limited m Nanosecond switching speeds
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OCR Scan
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2N6792
2N6792
2N6796
O-2I35AF
O-205AF
2N6800
T0-205AF
2N6802
MIL-S-19500/
2N6792 JANTX
C055
LH0063
QPL-19500
2N6904
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PDF
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transistor 65 C 3549
Abstract: 2N6800 2N6756 LH0063 QPL-19500 ICI 555
Text: Standard Power MOSFETs File N u m b e r 2N6800 1904 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power MOS Field-Effect Transistor 3A, 400V f D S o n = 1 Q N -C H A N N E L E N H A N C E M E N T M OD E D Features: • m m m m SOA is pow er-dissipation lim ited
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OCR Scan
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2N6800
2N6800
2N6796
O-2I35AF
O-205AF
T0-205AF
2N6802
MIL-S-19500/
transistor 65 C 3549
2N6756
LH0063
QPL-19500
ICI 555
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PDF
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