Untitled
Abstract: No abstract text available
Text: 2N6794U Dimensions in mm inches . N-Channel MOSFET in a Hermetically sealed TO39 Metal Package. 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. N-Channel MOSFET.
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2N6794U
O205AF)
11-Oct-02
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2N6794
Abstract: mosfet 2n6788 MOSFET cross-reference 2N6788 2N6790 2N6792 mmc 4011 E transistor equivalent 2n6788
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 11 May 2010. INCH-POUND MIL-PRF-19500/555K 11 February 2010 SUPERSEDING MIL-PRF-19500/555J 8 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/555K
MIL-PRF-19500/555J
2N6788,
2N6788U,
2N6790,
2N6790U,
2N6792,
2N6792U,
2N6794,
2N6794U,
2N6794
mosfet 2n6788
MOSFET cross-reference
2N6788
2N6790
2N6792
mmc 4011 E
transistor equivalent 2n6788
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Diode 400V 5A
Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
Text: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM
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2C415
2C425
2C444
2C746
2N1131L
2N1132
2N1132CSM
2N1132DCSM
2N1208
2N1209
Diode 400V 5A
lm1083
BZY55C
transistor 2n1208
bc109 spice
IRF9024
CV7404
mnt6337j
sml1258
SML1004RGN
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2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 March 2004. INCH-POUND MIL-PRF-19500/555H 8 December 2003 SUPERSEDING MIL-PRF-19500/555G 8 December 1997 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/555H
MIL-PRF-19500/555G
2N6788,
2N6788U,
2N6790,
2N6790U,
2N6792,
2N6792U,
2N6794,
2N6794U,
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smd 662
Abstract: 2N7422 2n7425 2N7426 2N7383 601 SMD 2N7389 IRHM9260 2N7422U 2N7219U
Text: QPL Product Matrix February, 1999 Government & Space Products Package TO39 LCC MO036 MO036 MO036 TO39 LCC TO39 LCC TO3 TO39 LCC TO3 TO39 LCC TO39 LCC TO257 TO257 TO39 LCC TO254 SMD-1 TO254 SMD-1 TO3 TO254 SMD-1 TO254 SMD-1 TO254 TO-254 SMD-1 TO-254 SMD-2 TO-254
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MO036
O-254
2N6782,
IRFF110
2N6782U,
IRFE110
smd 662
2N7422
2n7425
2N7426
2N7383
601 SMD
2N7389
IRHM9260
2N7422U
2N7219U
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Untitled
Abstract: No abstract text available
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 1 June 2013. INCH-POUND MIL-PRF-19500/555L 17 April 2013 SUPERSEDING MIL-PRF-19500/555K 11 February 2010 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON,
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MIL-PRF-19500/555L
MIL-PRF-19500/555K
2N6788,
2N6788U,
2N6790,
2N6790U,
2N6792,
2N6792U,
2N6794,
2N6794U,
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RG 2006
Abstract: 2N6788 2N6792 2N6790 2N6794
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 08 March 1998. INCH POUND MIL-PRF-19500/555G 08 December 1997 SUPERSEDING MIL-S-19500/555F 31 March 1995 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, FIELD EFFECT TRANSISTOR, N-CHANNEL, SILICON
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MIL-PRF-19500/555G
MIL-S-19500/555F
2N6788,
2N6788U,
2N6790,
2N6790U,
2N6792,
2N6792U,
2N6794
2N6794U
RG 2006
2N6788
2N6792
2N6790
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