Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    2N7000 FET Search Results

    2N7000 FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    OPA2137EA/250 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/250G4 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA2137EA/2K5 Texas Instruments Low Cost FET-Input Operational Amplifier 8-VSSOP Visit Texas Instruments Buy
    OPA131UA/2K5 Texas Instruments General Purpose FET-Input Operational Amplifiers 8-SOIC -55 to 125 Visit Texas Instruments Buy
    OPA2132UAE4 Texas Instruments High Speed FET-Input Operational Amplifiers 8-SOIC -40 to 125 Visit Texas Instruments Buy
    SF Impression Pixel

    2N7000 FET Price and Stock

    Diotec Semiconductor AG 2N7000

    MOSFET - TO-92 - 60V - 0.2A - N - 0.35W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 24,586
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0338
    		Buy Now

    onsemi 2N7000

    N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 8,250
    • 1 -
    • 10 -
    • 100 -
    • 1000 $0.1239
    • 10000 $0.1092
    		Buy Now

    onsemi 2N7000-D75Z

    2N7000 Series 60V 5 Ohms N-Ch Enhancement Mode Field Effect Transistor - TO-92
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000-D75Z 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0837
    		Buy Now

    onsemi 2N7000-D26Z

    N-Channel Enhancement Mode Field Effect Transistor 60V, 200mA, 5 Ω
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000-D26Z 6,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.0796
    		Buy Now

    NTE Electronics Inc 2N7000

    Small Signal Field-Effect Transistor
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com 2N7000 4,300
    • 1 -
    • 10 -
    • 100 $0.498
    • 1000 $0.396
    • 10000 $0.346
    		Buy Now
    Find more 2N7000 FET price and stock on Findchips.com

    2N7000 FET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information ^DS O N BVdgs (max) 60V 5.0ft JI BVdss / Order Number / Package TO-92 2N7000 75mA Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		2N7000 PDF

    2n7000

    Abstract: siemens fet to92 fet to92
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 2n7000 siemens fet to92 fet to92 PDF

    D 92 M 03 DIODE

    Abstract: 2n7000 4W-25 fet 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology • Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 D 92 M 03 DIODE 2n7000 4W-25 fet 2n7000 PDF

    2N7000

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS / BVDGS RDS ON (max) ID(ON) (min) 60V 5.0Ω 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology ❏ Free from secondary breakdown These enhancement-mode (normally-off) transistors utilize a


    Original     		2N7000 2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A110807 PDF

    2n7000 equivalent

    Abstract: equivalent of 2n7000
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 DSPD-TO92TapingSpec B070610 2n7000 equivalent equivalent of 2n7000 PDF

    2N7000 circuits

    Abstract: 125OC 2N7000 2N7000-G 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A042507 2N7000 circuits 125OC 2N7000-G 2n7000g PDF

    Untitled

    Abstract: No abstract text available
    Text: ^ Supertex inc . 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information Order Number / Package BVusg/ ^DS O N b v dgs (max) (min) TO-92 60V 5Q 75mA 2N7000 ' d (ON) Features Advanced DMOS Technology □ These enhancement-mode (normally-off) power transistors


    OCR Scan     		2N7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET BVDgs RdS ON (max) If Ordering Information 60V 5n 75mA b v dss / Order Number / Package TO-92 2N7000 Features I i Free from secondary breakdown !J Low power drive requirement r i Ease of paralleling


    OCR Scan     		2N7000 PDF

    2N7000 TO-92

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 A021307 2N7000 TO-92 PDF

    TO-92 Package Dimensions diode inc

    Abstract: 2N7000 125OC 2N7000-G transistor 2n7000 2n7000g
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► The Supertex 2N7000 is an enhancement-mode normallyoff transistor that utilizes a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing


    Original     		2N7000 2N7000 DSFP-2N7000 B091008 TO-92 Package Dimensions diode inc 125OC 2N7000-G transistor 2n7000 2n7000g PDF

    2n7000 motorola

    Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		2N7000/D 2N7000 226AA) 2N7000/D 2n7000 motorola To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out PDF

    2N7000 MOTOROLA

    Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ


    Original     		2N7000/D 2N7000 226AA) 2N7000 MOTOROLA 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola" PDF

    Untitled

    Abstract: No abstract text available
    Text: Supertex inc. 2N7000 N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information b v dss/ b v dgs RdS ON (max) Id(ON) (min) 60V 5.0Q. 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		2N7000 PDF

    MOSFET P-channel SOT-23

    Abstract: NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N
    Text: Power MOSFET Numeric Data Sheet Listing Chapter 1: Power MOSFET Data Sheets Device Function Page 2N7000 . . . . . . . . . . . . . . . . . . . . . Small Signal MOSFET 200 mAmps, 60 Volts . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26


    Original     		2N7000 2N7002L MOSFET60 OT-23 BS107, BS107A BS108 BS170 NUD3124 NUD3160 MOSFET P-channel SOT-23 NTD80N02 NTD18N06 NTMS3P03R2 MLD1N06CL NTHD5904N PDF

    Untitled

    Abstract: No abstract text available
    Text: 2N7000 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain


    Original     		2N7000 2N7000 DSFP-2N7000 B091008 PDF

    BC237

    Abstract: 2N7000 Fet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR


    Original     		2N7000 226AA) f218A MSC1621T1 MSC2404 MSD1819A MV1620 MV1624 MV1636 MV1640 BC237 2N7000 Fet PDF

    fet 2n7000

    Abstract: 2N7000
    Text: N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET 2N7000 ISSUE 2– NOVEMBER 94 S G D TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage VCES 60 V Continuous Drain Current ID 0.2 A Pulsed Drain Current IDM 0.5 A Gate Source Vootage


    Original     		2N7000 500mA 200mA fet 2n7000 2N7000 PDF

    2N7002U

    Abstract: 2N7000 021
    Text: WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSOLUTE MAXIMUM RATINGS Ta - +25°C unless otherwise noted (TO-92 Package) • High Gate Oxide Breakdown, +40V min. ■ Low Output and Transfer Capacitances ■ Extended Safe Operating Area


    OCR Scan     		2N7000 2N7002 2N7002U 2N7000 021 PDF

    fairchild 2N7002 MARKING

    Abstract: 2N7000-D nds7000
    Text: November 1995 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistor General Description Features High density cell design for low RDS ON . These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density,


    Original     		2N7000 2N7002 NDS7002A 400mA O-92-3 AN-42037: ML4423 fairchild 2N7002 MARKING 2N7000-D nds7000 PDF

    Untitled

    Abstract: No abstract text available
    Text: N-Channel Enhancement-Mode Vertical DMOS FET Ordering Information BVDSS/ BVdgs RdS ON (max) I d(ON) (min) 60V 5£2 75mA Order Number / Package TO-92 2N7000 Features Advanced DMOS Technology □ Free from secondary breakdown □ Low power drive requirement


    OCR Scan     		2N7000 PDF

    2N7000 021

    Abstract: 25c021
    Text: TELEDYNE COMPONENTS 3hE D fic117b02 00077^2 1 «TSC 'T Z S Z g WTELEDYNE COMPONENTS 2N7000 2N7002 N-CHANNEL ENHANCEMENT-MODE DMOS POWER FETS FEATURES ABSO LUTE MAXIMUM RATINGS _ _ . • High Gate Oxide Breakdown, ±40V min. ■ Low Output and Transfer Capacitances


    OCR Scan     		117b02 2N7000 2N7002 2N7000 021 25c021 PDF

    Topaz Semiconductor

    Abstract: TO226AA 2n7000 sseb 2N700 52BL
    Text: TOPAZ SEMICONDUCTOR OSE D g TüôSSEb □□□QTflS G | “* SEMICONDUCTOR T-29-25 2N7000 N-CHANNEL ENHANCEMENT-MODE D-MOS POW m FETs ORDERING INFORMATION TO-226AA TO-92 Plastic Package 2N700Û Description 60V, 5 ohm FEATURES APPLICATIONS • High Gate Oxide Breakdown, +40V min.


    OCR Scan     		T-29-25 O-226AA 2N700Ã 400mW 2N7000 Topaz Semiconductor TO226AA 2n7000 sseb 2N700 52BL PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il


    OCR Scan     		2N7000/D com-TOUCHTONE602-244-6609 PDF