2n7000 motorola
Abstract: To92 transistor motorola fet 2n7000 2N7000 MOTOROLA pin out
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
2N7000/D
2n7000 motorola
To92 transistor motorola
fet 2n7000
2N7000 MOTOROLA pin out
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2N7000 MOTOROLA
Abstract: 2N7000 Fet To92 transistor motorola 2N7000 MOTOROLA pin out 2N7000 fet 2n7000 2N7000 "Motorola"
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
2N7000 MOTOROLA
2N7000 Fet
To92 transistor motorola
2N7000 MOTOROLA pin out
2N7000
fet 2n7000
2N7000 "Motorola"
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2n7000 darlington
Abstract: 2N7000 ADI1318RI TO226AA
Text: Order this data shaat by 2N7000/D MOTOROLA • SEMICONDUCTOR TECHNICAL DATA 2N7000 Advance Information Small-Signal Transistor Field Effect N-Channel Enhancement-Mode Silicon Gate TMOS J . are designed for high voltage, high speed applications such as switching regulators, converters, solenoid and relay drivers.
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2N7000/D
2N7000
O-226AA)
2n7000 darlington
2N7000
ADI1318RI
TO226AA
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To92 transistor motorola
Abstract: 2N7000 fet 2n7000
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ
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2N7000/D
2N7000
226AA)
To92 transistor motorola
2N7000
fet 2n7000
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BC237
Abstract: 2N7000 Fet
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N7000 N–Channel — Enhancement Motorola Preferred Device 3 DRAIN 2 GATE 1 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain–Gate Voltage RGS = 1.0 MΩ VDGR
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2N7000
226AA)
f218A
MSC1621T1
MSC2404
MSD1819A
MV1620
MV1624
MV1636
MV1640
BC237
2N7000 Fet
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YTA630
Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Text: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509
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2N7000
2N7002
2SJ377
2SJ378
2SJ380
2SJ401
2SJ402
2SJ407
2SJ412
2SJ419
YTA630
MTW14P20
BSS125
MTAJ30N06HD
2SK2837 equivalent
SMU10P05
SMP60N06 replacement
STE180N10
RFH75N05E
IRFD620
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VN5000TNE
Abstract: IRF0123 VMP4 motorola 20n IRF0113 mosfet vn66af VN0106N2 mosfet 2sk* to-92 mosfet 20n 735M
Text: MOSFET Item Part Number Manufacturer V BR DSS loss Max Po Max ros (on) gFS Min VGS(th) elsa Max Max tr Max tf Max TOper Max Package Style N-Channel Enhancement-Type, (Co nt' d) 5 S01124Bo S01124Bo VNOS10l 2N7000 VN2222l So1117Bo So1117N S01137Bo VN2222lM 15
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S01124Bo
VNOS10l
2N7000
VN2222l
So1117Bo
So1117N
S01137Bo
VN2222lM
VN130SN3
VN5000TNE
IRF0123
VMP4
motorola 20n
IRF0113
mosfet vn66af
VN0106N2
mosfet 2sk* to-92
mosfet 20n
735M
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IRF1830G
Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23
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AO4405
AO4407
AO4408
AO4409
AO4410
AO4411
AO4413
AO4415
AO4422
AO4700
IRF1830G
IRF1830
transistor IRF1830G
APM2054N equivalent
apm2054n
AP85L02h
AP70N03S
2SK3683
ap70l02h
2SK2696
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s72 sot 23
Abstract: transistor marking s72 2N7019 2N7002 MARKING s72 2N7002 S72 SOT-23 s72 SOT23 Transistor s72 sot23 2n7002 transistor s72 S72 Transistor
Text: N & P CHANNEL MOSFETS ENHANCEMENT MODE N CHANNEL SOT-23 Cont. D-S Drain Voltage Current Type Marking V max A max BS870 S70 60 0.25 2N7002 S72 60 0.25 *: Pulse test width 80µs, 1% duty factor. Pwr. Dispn. TC=25˚C W max 0.31 0.31 Gate Thr. Volt. VGS=VDS ID=ImA
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BS870
2N7002
OT-23
BS850
22N7002
BS170
s72 sot 23
transistor marking s72
2N7019
2N7002 MARKING s72
2N7002 S72 SOT-23
s72 SOT23
Transistor s72 sot23
transistor s72
S72 Transistor
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uart 8250
Abstract: LZ64 8250 uart RS232-specification zener diode 1N4742 8250 uart rxd 8250 uart datasheet DS1982 DS1986 DS1991
Text: APPLICATION NOTE 74 Application Note 74 Reading and Writing iButtons via Serial Interfaces I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is either “stolen”
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1N5228
1N5234
1N5235
1N5242
2N7000
BSS110
uart 8250
LZ64
8250 uart
RS232-specification
zener diode 1N4742
8250 uart rxd
8250 uart datasheet
DS1982
DS1986
DS1991
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uart 8250
Abstract: 8250 uart 8250 uart datasheet programmable interval timer 8253 real time microprocessor 8253 applications 100 ohm POT .25W interfacing 8051 with eprom and ram zener diode 1N5232 8253 Programmable Interrupt Controller microprocessors interface 8253 "Real Time Clock"
Text: APPLICATION NOTE 74 Application Note 74 Reading and Writing iButtons via Serial Interfaces I. INTRODUCTION An iButtonTM is a chip housed in a stainless steel enclosure. The electrical interface is reduced to the absolute minimum, i.e., a single data line plus a ground reference. The energy needed for operation is either “stolen”
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1N5228
1N5234
1N5235
1N5242
2N7000
BSS110
uart 8250
8250 uart
8250 uart datasheet
programmable interval timer 8253
real time microprocessor 8253 applications
100 ohm POT .25W
interfacing 8051 with eprom and ram
zener diode 1N5232
8253 Programmable Interrupt Controller
microprocessors interface 8253 "Real Time Clock"
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2N7000
Abstract: ADI1318 CM-300 2n7000 motorola
Text: MOTOROLA SEMICONDUCTOR TECHNiC~~., DATA ““ ~~ . . , .“., . I ‘, ., . “’2N7000 Advance lqformation Power Field Effect Transistor’ ‘ N-Channel Enhancement Mode Siiicon GateTMOS , . . . are designed for high voltage, high speed power switching applacations such as switching regulators, converters, solenoid and”
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2N7000
O-226AA]
2N7000
ADI1318
CM-300
2n7000 motorola
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500w subwoofer amplifier circuit diagram
Abstract: 500w audio amplifier circuit diagram 500w power amplifier pcb diagram schematic diagram inverter 500w USING MOSFET schematic diagram PC Power supply 500w 500w audio power amplifier circuit diagram TA0103A subwoofer PREAMP circuit diagram schematic diagram audio amplifier 500w 500W Audio Amplifier with MOSFET schematic diagram
Text: TECHNICAL INFORMATION CLASS-T DIGITAL AUDIO AMPLIFIER EVALUATION BOARD USING EB-TA0103 DIGITAL POWER PROCESSING TM TECHNOLOGY January 2001, For Rev. 3.3 Board General Description The EB-TA0103 evaluation board is based on the TA0103A digital audio power amplifier from Tripath
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EB-TA0103
EB-TA0103
TA0103A
24AWG
18AWG
J151-ND
J152-ND
J155-ND
500w subwoofer amplifier circuit diagram
500w audio amplifier circuit diagram
500w power amplifier pcb diagram
schematic diagram inverter 500w USING MOSFET
schematic diagram PC Power supply 500w
500w audio power amplifier circuit diagram
subwoofer PREAMP circuit diagram
schematic diagram audio amplifier 500w
500W Audio Amplifier with MOSFET schematic diagram
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GFS 92 2158 1
Abstract: 1N4148 discontinued IRF9Z14 PHILIPS ntc 640 2n7000 d10 GFS MAGNETICS BQ2003 Applications Keystone RL0703-5744-103-S1 Fenwal NTC 2k 1N4148
Text: U-506 Step-Down Switching Current Regulation Using the bq2003 Fast-Charge IC Thermal packaging requirements are often the practical limits in electronic design. Basic thermal management or component thermal stress/reliability issues can affect an otherwise successful product. The use of switching
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U-506
bq2003
bq2003
GFS 92 2158 1
1N4148 discontinued
IRF9Z14
PHILIPS ntc 640
2n7000 d10
GFS MAGNETICS
BQ2003 Applications
Keystone RL0703-5744-103-S1
Fenwal NTC 2k
1N4148
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thermistor r11 automatic
Abstract: RBA21 RBA26 RBB22 78L05ACZ Fenwal NTC 2k RBA25 MTP23P06 1N749 1N755
Text: DV2005S1 Fast Charge Development System Control of On-Board P-FET Switch-Mode Regulator Features ➤ bq2005 fast-charge control evaluation and development ➤ Charge current sourced from two on-board switch-mode regulators up to 3.0 A ➤ Fast charge control and conditioning for one or two
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DV2005S1
bq2005
thermistor r11 automatic
RBA21
RBA26
RBB22
78L05ACZ
Fenwal NTC 2k
RBA25
MTP23P06
1N749
1N755
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TM OS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Drain Source Voltage Symbol Value Unit V d SS 60 Vdc Drain-Gate Voltage R g s = 1-0 M il
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OCR Scan
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2N7000/D
com-TOUCHTONE602-244-6609
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2N7000 021
Abstract: fet 2n7000
Text: MOTOROLA Order this document by 2N7000/D SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2 N 7 0 00 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN / MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V d SS 60 Vdc D rain-G ate Voltage R g s = 1 0 M il
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OCR Scan
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2N7000/D
O-226AA)
2N7000 021
fet 2n7000
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Untitled
Abstract: No abstract text available
Text: 2N7000* M A XIM U M RATINGS Rating Symbol Value Unit D rain S o u rc e V oltage Vd SS 60 Vdc Drain-Gate V oltage V d GR 60 V dc VG S VG SM ±20 ±40 Vdc Vpk 'd 200 500 CASE 29-04, STYLE 22 TO-92 TO-226AA (R q s = 1 M U ) G a te-Source V oltage — C o n tin u o u s
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OCR Scan
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2N7000*
O-226AA)
2N7000
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Untitled
Abstract: No abstract text available
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA 2N7000 Advance Information S m a ll-S ig n a l Field E ffe ct T ra n sisto r N -C h ann el Enhancem ent-M ode S ilic o n G ate T M O S N-CHANNEL SM A LL-SIG N AL T M O S FET rDS on = 5 O H M S 60 VOLTS . . . are designed fo r h ig h volta g e , hig h speed a p p lica tio n s such as
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2N7000
O-226AA)
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA TMOS FET Transistor 2N 7000 N-Channel — Enhancement Motorola Preferred Device 3 DRAIN MAXIMUM RATINGS Rating Symbol Value Drain Source Voltage Voss 60 Drain-Gate Voltage Rg s = 1-0 M il vdgr 60 Gate-Source Voltage
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transistor 6z
Abstract: No abstract text available
Text: MMBF170LT1 CASE 318-07, STYLE 21 SOT-23 TO-236AB M AXIM UM RATINGS Rating Symbol Value Drain-Source Voltage vdss 60 Vdc Drain-Gate Voltage V d GS 60 Vdc Gate-Source Voltage Vg s ±20 Vdc Drain Current — Continuous Pulsed 'd 'd m 0.5 0.8 Ade Unit D rain
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OCR Scan
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MMBF170LT1
OT-23
O-236AB)
2N7000
transistor 6z
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Untitled
Abstract: No abstract text available
Text: M A X IM U M RATINGS Rating Symbol Value Drain-Source Voltage V d SS 60 Vdc Drain-Gate Voltage RG s - 1 MO VDGR 60 Vdc VGS -4 0 Gate-Source Voltage Drain Current Continuous Pulsed Unit Vdc mAdc Total Power Dissipation a Tq - 25CC Derate above 25CC Operating and Storage
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2N7000
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JSs sot23
Abstract: No abstract text available
Text: BSS123LT1* M A X IM U M R A TIN G S Symbol Value Unit Drain-Source Voltage VDSS 100 Vdc Gate-Source Voltage - Continuous — Non-repetitive tp « 50 ¿ts vgs V GSM ±20 ±40 Vdc Vpk Rating CASE 318-07, STYLE 21 SOT-23 (TO-236AB) Ade Drain Current Continuous (1)
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BSS123LT1*
OT-23
O-236AB)
2N7000
JSs sot23
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MFE9200
Abstract: BS107 MOTOROLA BS170 MOTOROLA MPF4150 IRFF9110 IRFF9111 IRFF9112 IRFF9113 IRFF9120 IRFF9121
Text: FIELD-EFFECT TRANSISTORS continued TMOS Power MOSFETs (continued) VGS (t/h) 0n rds (on) @ ID •d s s V(BH)DSS ■g s s C |S S ^rss •on •off n Max (A) Min Max //A Max (V) Min (nA) Max (pf) Max (pf) Max (ns) Max (ns) Max IRFF9110 IRFF9111 IRFF9112 IRFF9113
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IRFF9110
IRFF9111
IRFF9112
IRFF9113
IRFF9120
IRFF9121
IRFF9122
IRFF9123
IRFF9130
IRFF9131
MFE9200
BS107 MOTOROLA
BS170 MOTOROLA
MPF4150
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